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TPD1008SA
High-side Power Switch for Motors, Solenoids, and Lamp Drivers
The TPD1008SA is a monolithic power IC for high-side switches. The IC
has a vertical MOS FET output which can be directly driven from a CMOS
or TTL logic circuit (e.g., an MPU). The device offers intelligent
self-protection and diagnostic functions.
Features
z A monolithic power IC with a new structure combining a control block
(BiCMOS) and a vertical power MOS FET (MOS) on a single chip
z One side of load can be grounded to a high-side switch.
z Can directly drive a power load from a microprocessor.
z Builtin protection against thermal shutdown and load short circuiting
z Incorporates a diagnosis function that allows diagnosis output to be
read externally at load short-circuiting, opening, or overtemperature.
z Up to 10V of counter-electromotive force from an L load can be
applied.
z Low on-resistance
Pin Assignment
Weight
SSIP5P1.70C : 2.1g (typ.)
ZIP5P1.70L : 2.1g (typ.)
ZIP5P1.70K : 2.1g (typ.)
Note:
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TPD1008SA
Marking
Lot No.
TPD
1008SA
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Block Diagram
Pin Description
Pin No.
Symbol
Function
IN
DIAG
Selfdiagnosis detection pin. Goes low when overheating is detected or when output is short-circuited
with input on (high).
nchannel open drain.
GND
Ground pin.
OUT
When the load is short-circuited and current in excess of the detection current flows to the output pin,
the output automatically turns on or off.
VDD
Power pin.
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TPD1008SA
Timing Chart
INPUT SIGNAL
OVERHEATING
DETECTION
OVERCURRENT
DETECTION
OUTPUT SIGNAL
OFF
CURRENT LIMIT
DIAGNOSIS
OUTPUT
Truth Table
Input Signal
Output Signal
Diagnosis Output
State
Normal
Load open
Overtemperature
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TPD1008SA
Absolute Maximum Ratings (Ta = 25C)
Characteristics
Symbol
Drain-source Voltage
Supply Voltage
Input Voltage
Unit
VDS
60
DC
VDD (1)
25
Pulse
VDD (2)
60 (Rs = 1, = 250ms)
DC
VIN (1)
0.5~12
Pulse
VIN (2)
VDIAG
0.5~25
IO
Internally Limited
IIN
10
mA
IDIAG
mA
Tc = 25C
PD (1)
30
Ta = 25C
PD (2)
Topr
40~110
Tj
150
Rating
Operating Temperature
Junction Temperature
Storage Temperature
Tstg
55~150
Lead Temperature/Time
TSOL
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Symbol
Test Condition
Typ.
Max
Unit
12
18
IDD
mA
VIH
VDD = 12V, IO = 2A
3.5
VIL
1.5
50
200
0.2
0.2
0.4
IIN (2)
Min
VDD (opr)
IIN (1)
Input Current
Test
Circuit
On Voltage
VDS (ON)
On Resistance
RDS (ON)
0.2
IOL
1.2
mA
Diagnosis Output
Voltage
L Level
VDL
0.4
Diagnosis Output
Current
H Level
IDH
10
IS (1) (Note 1)
IS (2) (Note 2)
12
150
160
200
10
Overcurrent Protection
Thermal Shutdown
Temperature
Hysteresis
TS
TS
Rops
tON
tOFF
VDD = 8V
20
100
VDD = 12V, RL = 5
TC = 25C
10
100
10
30
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TPD1008SA
Test Circuit 1
Overcurrent Detection
Test Circuit 2
Overcurrent Detection
Test Circuit 3
Switching Time
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TPD1008SA
TC=25
TC=25
RDS(ON)
TC
TC=25
CASE TEMPERATURE
IS
TC ()
TC
TC=25
CASE TEMPERATURE
TC ()
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TPD1008SA
VDL
TC
TC=25
CASE TEMPERATURE
ROPS
TC ()
TC
CASE TEMPERATURE
TC ()
TC=25
Precaution
1.
Since there is no built-in protection against reverse connection of batteries, etc., provide such protection using
external circuits.
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TPD1008SA
Package Dimensions
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TPD1008SA
Package Dimensions
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TPD1008SA
Package Dimensions
10
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TPD1008SA
20070701-EN
11
2006-10-31