Rqa 0009 TXD

Preliminary Datasheet
RQA0009TXDQS
R07DS0492EJ0200
(Previous: REJ03G1520-0100)
Rev.2.00
Jun 28, 2011
Silicon N-Channel MOS FET

Features
High Output Power, High Gain, High Efficiency
Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65%
(VDS = 6 V, f = 520 MHz)
Compact package capable of surface mounting
Electrostatic Discharge Immunity Test
(IEC Standard, 61000-4-2, Level4)
Outline
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK)
3
1. Gate
2. Source
3. Drain
4. Source
1
4
2, 4
Note:
Marking is TX.
Absolute Maximum Ratings

(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
Pchnote
Tch
Tstg
Ratings
16
5
3.2
15
150
55 to +150
Unit
V
V
A
W
C
C
Note: Value at Tc = 25C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
Page 1 of 21
RQA0009TXDQS
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward Transfer Admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Output Power
Symbol
IDSS
IGSS
VGS(off)
|yfs|
Ciss
Coss
Crss
Pout
Power Added Efficiency

Output Power
PAE
Pout

Output Power
PAE
Pout

Output Power
PAE
Pout

Output Power
PAE
Pout

Output Power
PAE
Pout

Output Power
PAE
Pout

Output Power
PAE
Pout
PAE
Min.
0.15
2.2
Typ
0.5
3.2
76
40
3.5
33.1
2.0
65.7
38.6
7.2
62.5
33.0
2.0
68.5
38.8
7.6
Max.
15
2
0.8
4.4
Unit
A
A
V
S
pF
pF
pF
dBm
W
%
dBm
W
%
dBm
W
%
dBm
W
36.8
4.8
60
69.2
33.1
2.1
66.4
39.0
8.0
67.9
35.2
3.3
60
37.8
6.0
65
%
dBm
W
%
dBm
W
%
dBm
W
%
dBm
W
%
Test Conditions
VDS = 16 V, VGS = 0
VGS = 5 V, VDS = 0
VDS = 6 V, ID = 1 mA
VDS = 6 V, ID = 1.6 A
VGS = 5 V, VDS = 0, f = 1 MHz
VDS = 6 V, VGS = 0, f = 1 MHz
VDG = 6 V, VGS = 0, f = 1 MHz
VDS = 3.6 V, IDQ = 200 mA
f = 155 MHz,
Pin = +20 dBm (100mW)
VDS = 7.0 V, IDQ = 200 mA
f = 155 MHz,
Pin = +25 dBm (316 mW)
VDS = 3.6 V, IDQ = 200 mA
f = 360 MHz,
Pin = +20 dBm (100 mW)
VDS = 7.0 V, IDQ = 200 mA
f = 360 MHz,
Pin = +25 dBm (316 mW)
VDS = 3.6 V, IDQ = 200 mA
f = 465 MHz,
Pin = +20 dBm (100 mW)
VDS = 7.0 V, IDQ = 200 mA
f = 465 MHz,
Pin = +25 dBm (316 mW)
VDS = 4.8 V, IDQ = 300 mA
f = 465 MHz,
Pin = +17 dBm (50 mW)
VDS = 6 V, IDQ = 180 mA
f = 520 MHz,
Pin = +25 dBm (316 mW)
Main Characteristics
Typical Output Characteristics
20
Pulse Test
4
2.0 V
Drain Current ID (A)
Channel Power Dissipation Pch (W)
Maximum Channel Power

Dissipation Curve
15
10
50
100
150
Case Temperature TC (C)
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
200
1.75 V
3
1.5 V
2
1.25 V
1
VGS = 1.0 V
10
Drain to Source Voltage VDS (V)
Page 2 of 21
RQA0009TXDQS
Preliminary
Forward Transfer Admittance
vs. Drain Current
4
VDS = 6 V
Pulse Test
3
|yfs|
ID
0
0
0.5
1.0
1.5
2.0
Forward Transfer Admittance |yfs| (S)

Forward Transfer Admittance |yfs| (S)
Typical Transfer Characterisitics
1.0
0.1
0.1
1.0
10.0
Input Capacitance vs.

Gate to Source Voltage
Output Capacitance vs.

Drain to Source Voltage
80
70
60
50
VDS = 0
f = 1 MHz
40
-5 -4 -3 -2 -1
Output Capacitance Coss (pF)
1000
100
VGS = 0
f = 1 MHz
10
0.1
10
Gate to Source Voltage VGS (V)
Reverse Transfer Capacitance vs.

Drain to Gate Voltage
MSG, MAG vs. Frequency
100
VGS = 0
f = 1 MHz
10
1
0.1
Drain to Gate Voltage VDG (V)
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
10
Maximum Stable Gain MSG (dB)

Maximum Available Gain MAG (dB)
Input Capacitance Ciss (pF)
VDS = 6 V
Pulse Test
Gate to Source Voltage VGS (V)
90
Reverse Transfer Capacitance Crss (pF)
10.0
30
VDS = 6 V
ID = 180 mA
25
MSG
20
15
MAG
10
5
0
0
500
1000
1500
2000
Frequency f (MHz)
Page 3 of 21
RQA0009TXDQS
Preliminary
Evaluation Circuit 1 (@VDD = 3.6 & 7.0V Tuning, f = 155 MHz)

VDD
VGG
C4
C5
C12
C13
R2
C11
C3
50
C1
C2
L4
R1
L1
C9
L2
C6
C7
L3
C10
50
RF OUT
RF IN
C8
L1
L2
L3
L4
R1
R2
100 pF Chip Capacitor

1 F/+16V Chip Tantalum Capacitor
4 pF Chip Capacitor
33 nH Chip Inductor
3.6 nH Chip Inductor
8 Turns D: 0.5 mm, 2.4 mm Enamel Wire
33 Chip Resistor
1 k Chip Resistor
Output Power, Drain Current

vs. Input Power
Pout
VDS = 3.6 V
IDQ = 200 mA
f = 155 MHz
30
25
ID
20
1.5
1
15
0.5
10
5
10
15
20
25
30
60
PG
20
40
10
20
VDS = 3.6 V
IDQ = 200 mA
f = 155 MHz
0
30
10
15
20
25
0
30
Input Power Pin (dBm)

vs. Frequency
Power Gain, Power Added Efficiency

vs. Frequency
40
Pout
35
30
2.5
25
30
25
ID
VDS = 3.6V
IDQ = 200 mA
Pin = +20dBm
15
1.5
1
0.5
10
0
120 130 140 150 160 170 180 190
Frequency f (MHz)
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
Power Gain PG (dB)
20
2.5
35
Power Gain PG (dB)
PAE
Output Power Pout (dBm)
80
40
80
PAE
70
60
20
15
PG
10
5
0
50
40
VDS = 3.6V
IDQ = 200 mA
Pin = +20dBm
30
Power Added Efficiency PAE (%)
40

vs. Input Power
C1, C3, C10, C11

C2
C4, C13
C5, C12
C6
C7
C8
C9
20
120 130 140 150 160 170 180 190
Frequency f (MHz)
Page 4 of 21
RQA0009TXDQS
Preliminary
ID
20
1
IDQ = 200 mA
f = 155MHz
Pin = +20dBm
15
3.5
4.5
10
20
IDQ = 200 mA
f = 155 MHz
Pin = +20dBm
3.5
4.5

vs. Idling Current

vs. Idling Current
40
25
1.5
ID
1
VDS = 3.6V
0.5
f = 155 MHz
Pin = +20 dBm
0
300
400
500
15
100
200
Power Gain PG (dB)
2.5
2
20
80
PAE
Pout
30
60
20
40
PG
10
20
VDS = 3.6 V
f = 155 MHz
Pin = +20 dBm
0
0
100
200
300
400
0
500
Idling Current IDQ (mA)

vs. Input Power

vs. Input Power
3.0
40
35
2.5
Pout
2.0
30
ID
25
1.5
1.0
20
VDS = 7 V
f = 155 MHz
IDQ = 200 mA
15
10
5
10
15
20
25
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
0.5
0
30
Power Gain PG (dB)
Pout (dBm)
Output Power
PG
0
3
30
40
35
10
0
Pout (dBm)
20
40
Output Power
0.5
60
40
80
30
60
PG
20
40
PAE
10
VDS = 7 V
f = 155 MHz
IDQ = 200 mA
0
0
10
15
20
25
20
0
30
1.5
30
25
80
PAE
Power Gain PG (dB)
30
Pout (dBm)
Output Power
2.5
Pout
35
10
40
40

vs. Drain to Source Voltage

Page 5 of 21
RQA0009TXDQS
Preliminary

vs. Frequency
1.5
20
VDS = 7V
IDQ = 200 mA 0.5
Pin = +25 dBm
0
10
120 130 140 150 160 170 180 190
15
20
60
15
50
PG
10
40
VDS = 7V
30
IDQ =200 mA
Pin = +25 dBm
0
20
120 130 140 150 160 170 180 190
Frequency f (MHz)
Frequency f (MHz)


40
30
2
ID
20
IDQ = 200 mA
Pin = +25 dBm
f = 155 MHz
6
80
PAE
Power Gain PG (dB)
Pout
40
30
60
20
40
PG
10
0
2
0
10
20
IDQ = 200 mA
Pin = +25 dBm
f = 155 MHz
4
0
10

vs. Idling Current

vs. Idling Current
40
40
80
Pout
2.5
30
2
1.5
25
ID
1
20
15
100
200
VDS = 7V
0.5
Pin = +25 dBm
f = 155 MHz
0
300
400
500
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
PAE
Power Gain PG (dB)
35
10
0
70
Pout (dBm)
Output Power
PAE
30
60
20
40
PG
10
0
0
20
VDS = 7 V
Pin = +25 dBm
f = 155 MHz
100
200
300
400
25
30
ID
10
2
Pout (dBm)
25
50
Output Power
2.5
Power Gain PG (dB)
30
30
Pout
35
Output Power
Pout (dBm)
40

vs. Frequency
0
500
Page 6 of 21
RQA0009TXDQS
Preliminary

VDD
C14
VGG
C5
C15
C6
C13
C4
L4
R1
C3
C11
L1
L3
50
C12
RFOUT
RFIN
C2
1 F / +16V Chip Tantalum Capacitor
5 pF Chip Capacitor
C8
L1
L2
L3
L4
R1

6.8k Chip Resistor

vs. Input Power

vs. Input Power
3
Pout
30
25
1.5
20
ID
15
10
15
PG
20
40
10
20
VDS = 3.6 V
IDQ = 200 mA
f = 360 MHz
0
10
15
20
25
0
30

vs. Frequency

vs. Frequency
Pout
30
2.5
25
30
25
ID
20
VDS = 3.6V
IDQ = 200 mA
Pin = +20dBm
1.5
1
15
10
300
60
40
35
30
0.5
320
340
360
380
Frequency f (MHz)
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
0
400
Power Gain PG (dB)
VDS = 3.6 V
IDQ = 200 mA 0.5
f = 360 MHz
0
20
25
30
2.5
35
Power Gain PG (dB)
PAE
10
80
40
40
C10
C1
C2, C3,C8,C10
C4, C13
C5, C12, C15
C6, C14
C7
C9, C11
C7
80
PAE
70
60
20
15
PG
10
40
VDS = 3.6V
IDQ = 200 mA
Pin = +20dBm
5
0
300
50
350
30
20
400
50 C1
C9
L2
Frequency f (MHz)
Page 7 of 21
RQA0009TXDQS
Preliminary
1.5
20
ID
IDQ = 200 mA
f = 360MHz
Pin=+20dBm
15
3.5
4.5
20
40
PG
10
20
IDQ = 200 mA
f = 360 MHz
Pin=+20dBm
0
3
0
3.5
4.5

vs. Idling Current

vs. Idling Current
40
80
Pout
35
2.5
2
30
VDS = 3.6V
1.5
f = 360 MHz
Pin = +20 dBm
1
25
20
ID
0.5
15
100
300
200
400
0
500
60
20
40
PG
10
20
VDS = 3.6 V
f = 360 MHz
Pin = +20 dBm
100
200
300
400
0
500

vs. Input Power

vs. Input Power
40
35
2.5
Pout
30
25
1.5
ID
20
1
VDS = 7 V
IDQ = 200 mA
f = 360 MHz
15
10
0
30
0
0
10
15
20
25
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
0.5
0
30
80
40
PAE
Power Gain PG (dB)
10
0
Power Gain PG (dB)
PAE
Pout (dBm)
0.5
60
30
60
PG
20
40
10
VDS = 7 V
IDQ = 200 mA
f = 360 MHz
0
0
10
15
20
25
20
25
30
Power Gain PG (dB)
30
2.5
Pout
Pout (dBm)
Output Power
35
40
Output Power
80
PAE
10
40
40


0
30
Page 8 of 21
RQA0009TXDQS
Preliminary
25
30
2
1.5
20
1
VDS = 7V
IDQ = 200 mA
Pin = +25dBm
15
10
300
0.5
0
400
350
10
40
VDS = 7V
IDQ = 200 mA
Pin = +25dBm
300
30
20
400
350


40
80
Pout
40
30
ID
20
IDQ = 200 mA 1
Pin = +25 dBm
f = 360MHz
6
Power Gain PG (dB)
PAE
30
60
20
40
PG
10
20
IDQ = 200 mA
Pin = +25 dBm
f = 360MHz
0
2
0
10
0
10

vs. Idling Current

vs. Idling Current
40
40
3
Pout
35
2.5
30
2
1.5
25
ID
20
15
10
0
100
80
PAE
200
VDS = 7V
0.5
Pin = +25 dBm
f = 360 MHz
0
300
400
500
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
Power Gain PG (dB)
Pout (dBm)
Output Power
50
Frequency f (MHz)
10
2
Pout (dBm)
PG
15
Frequency f (MHz)
50
Output Power
60
20
ID
25
70
PAE
30
60
20
40
PG
10
0
0
VDS = 7 V
Pin = +25 dBm
f = 360 MHz
100
200
300
400
20
0
500
2.5
Pout
80
35
Power Gain PG (dB)
30
40

vs. Frequency

vs. Frequency
Page 9 of 21
RQA0009TXDQS
Preliminary

VDD
C14
VGG
C5
C15
C6
C13
C4
L4
R1
C3
C11
L1
L3
C12
50
RFOUT
RFIN
1 F / +16V Chip Tantalum Capacitor
7 pF Chip Capacitor
C9
C11
L1
L2, L3
L4
R1
2.5
Pout
25
1.5
1
ID
VDS = 3.6 V
IDQ = 200 mA
f = 465 MHz
15
10
0
10
15
20
25
PAE
0.5
Power Gain PG (dB)
35
80
40
30
60
PG
20
10
10
15
20
25
0
30

vs. Frequency

vs. Frequency
30
35
2.5
25
30
25
1.5
Pout
ID
20
VDS = 3.6 V
IDQ = 200 mA
Pin = +20dBm
450
460
0.5
470
480
Frequency f (MHz)
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
0
490
Power Gain PG (dB)
10
440
20
VDS = 3.6 V
IDQ = 200 mA
f = 465 MHz
40
15
40
0
30
40
20
2 pF Chip Capacitor
8 Turns D: 0.5 mm,f2.4mm Enamel Wire
6.8k Chip Resistor

vs. Input Power

vs. Input Power
30
C10
80
PAE
70
60
20
PG
15
50
10
5
0
40
VDS = 3.6 V
IDQ = 200 mA
Pin = +20dBm
440
450
460
30
470
480
20
490
C1
C2, C3, C7, C10
C4, C13
C5, C12, C15
C6, C14
C8
C8
C7
C2
50 C1
C9
L2
Frequency f (MHz)
Page 10 of 21
RQA0009TXDQS
Preliminary
1.5
20
ID
IDQ = 200 mA
f = 465MHz
Pin=+20dBm
15
3.5
4.5
20
40
PG
10
0
3.5
4.5

vs. Idling Current

vs. Idling Current
40
80
PAE
2.5
30
25
1.5
ID
1
20
VDS = 3.6V
0.5
Pin = +20 dBm
f = 465 MHz
0
300
400
500
15
100
200
Power Gain PG (dB)
Pout
30
60
VDS = 3.6 V
Pin = +20 dBm
f = 465 MHz
20
PG
40
10
0
0
20
100
200
300
400
0
500

vs. Input Power

vs. Input Power
3
35
2.5
Pout
30
25
1.5
20
ID
VDS = 7 V
IDQ = 200 mA
f = 465 MHz
15
10
5
10
15
20
25
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
0.5
0
30
40
Power Gain PG (dB)
40
35
10
0
20
IDQ = 200 mA
f = 465 MHz
Pin=+20dBm
0
3
Pout (dBm)
0.5
60
80
PAE
30
60
PG
20
40
10
VDS = 7 V
IDQ = 200 mA
f = 465 MHz
0
0
10
15
20
25
20
0
30
25
30
Power Gain PG (dB)
30
2.5
Pout
Pout (dBm)
Output Power
35
40
Output Power
80
PAE
10
40
40


Page 11 of 21
RQA0009TXDQS
Preliminary
25
30
2
1.5
20
1
VDS = 7V
IDQ = 200 mA
Pin = +25dBm
15
10
440
450
460
470
480
0.5
0
490
50
10
40
VDS = 7V
IDQ = 200 mA
Pin = +25dBm
440
450
460
30
470
480
20
490
Frequency f (MHz)


40
30
2
ID
20
IDQ = 200 mA
Pin = +25dBm
f = 465MHz
6
Power Gain PG (dB)
Pout
40
80
30
60
20
40
PG
10
0
10

vs. Idling Current

vs. Idling Current
40
40
3
2.5
30
2
1.5
25
ID
1
20
15
100
80
PAE
Pout
35
10
0
20
IDQ = 200 mA
Pin = +25dBm
f = 465MHz
0
2
0
10
200
VDS = 7V
0.5
Pin = +25 dBm
f = 465 MHz
0
300
400
500
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
Power Gain PG (dB)
Pout (dBm)
Output Power
PG
15
PAE
10
2
Pout (dBm)
60
Frequency f (MHz)
50
Output Power
70
20
ID
25
PAE
30
60
20
40
PG
10
0
0
20
VDS = 7 V
Pin = +25 dBm
f = 465 MHz
100
200
300
400
0
500
2.5
Pout
80
35
Power Gain PG (dB)
30
40

vs. Frequency

vs. Frequency
Page 12 of 21
RQA0009TXDQS
Preliminary
Evaluation Circuit (f = 465 MHz@VDS=4.8V)

C7
C6
C13
C14
VG
VD
R2
C5
C12
R1
L3
L1
50 C1
L2
C11 50
RFOUT
RFIN
C2
C1, C5, C11, C12

C2, C8
C3
C4, C9, C10
C6, C13
C7, C14
L1
L2
L3
R1
R2
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
C3
C4
C8
C9
C10

1 F / 35 V Chip Tantalum Capacitor
1 nH Chip Inductor
670 Chip Resistor
6.8 k Chip Resistor
Page 13 of 21
RQA0009TXDQS
Preliminary

vs. Input Power
1.6
25
1.0
ID
20
0.8
15
0.6
10
0.4
VDS = 4.8 V
IDQ = 300 mA
f = 465 MHz
5
5
10
15
20
25
20
80
15
60
10
40
PAE
VDS = 4.8 V
IDQ = 300 mA
f = 465 MHz
0.2
20
0
30
0
30
10
15
20
25

vs. Frequency
Input Return Loss vs. Frequency

80
19
70
PAE
18
60
PG
17
VDS = 4.8 V
IDQ = 300 mA
Pin = +17 dBm
16
450
455
460
465
470
475
50
40
480
Input Return Loss RL (dB)
20
-5
-10
-15
-20
VDS = 4.8 V
IDQ = 300 mA
Pin = +17 dBm
-25
-30
450
455
460
465
470
475
480
Frequency f (MHz)
Frequency f (MHz)
Power Gain, Power Added Efficiency,


vs. Idling Current
PG
65
20
60
19
PAE
18
55
17
50
16
15
IDQ = 300 mA
45
f = 465 MHz
Pin = +17 dBm
40
6
7
8
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
70
21
Power Gain PG (dB)
70
21
20
65
PAE
60
19
PG
18
55
17
50
16
15
0
0.1
0.2
VDS = 4.8 V
45
f = 465 MHz
Pin = +17 dBm
40
0.3
0.4
0.5
1.2
Power Gain PG (dB)
30
PG
Pout
Power Gain PG (dB)
100
1.4
35
Power Gain PG (dB)
25
40

vs. Input Power
Idling Current IDQ (A)
Page 14 of 21
RQA0009TXDQS
Preliminary
Evaluation Circuit (f = 520 MHz)

C6
C5
C13
C12
VG
VD
R2
C4
C11
R1
L1
L2
50 C1
IN
C10 50
L3
OUT
C2
C1, C4, C10, C11

C2
C3
C5, C12
C6, C13
C7
C8
C9
L1
L2
L3
R1
R2
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
C3
C7
C8
C9

5 pF Chip Capacitor
1 F Chip Tantalum Capacitor
7 pF Chip Capacitor
1 nH Chip Inductor
670 Chip Resistor
6.8 k Chip Resistor
Page 15 of 21
RQA0009TXDQS
Preliminary

vs. Input Power
1.6
1.0
ID
20
0.8
15
0.6
10
0.4
VDS = 6 V
f = 520 MHz
IDQ = 180 mA
5
0
5
10
15
20
25
60
15
PAE
40
10
VDS = 6 V
f = 520 MHz
IDQ = 180 mA
20
0
30
0
30
10
15
20
25

vs. Frequency
Input Return Loss vs. Frequency
PAE
60
15
PG
10
40
20
VDS = 6 V
IDQ = 180 mA
Pin = +25 dBm
0
510
530
550
0
450
470
490
Input Return Loss RL (dB)
80
-5
-10
-15
VDS = 6 V
IDQ = 180 mA
Pin = +25 dBm
-20
450
470
490
510
530
550
Frequency f (MHz)
Frequency f (MHz)
Power Gain, Power Added Efficiency,


vs. Idling Current
70
20
PAE
60
15
PG
50
10
0
3
IDQ = 180 mA
f = 520 MHz
Pin = +25 dBm
4
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
40
30
20
Power Gain PG (dB)
Power Gain PG (dB)
80
PG
0.2
20
Power Gain PG (dB)
20
80
15
75
PG
10
0
0
70
PAE
VDS = 6 V
f = 520 MHz
Pin = +25 dBm
0.1
0.2
0.3
0.4
65
60
0.5
25
Power Gain PG (dB)
1.2
30
100
1.4
Pout
35
25
Output Power
Pout (dBm)
40

vs. Input Power
Idling Current IDQ (A)
Page 16 of 21
RQA0009TXDQS
Preliminary
S21 Parameter vs. Frequency

.8
.6
Scale: 5 / div.
90
1.5
60
120
2
.4
3
30
150
4
5
.2
10
.2
.4
.6 .8 1
1.5 2
3 45
10
180
-10
-5
-4
-.2
-.4
-30
-150
-3
-2
-.6
-.8
-1
-60
-120
-1.5
-90
Test condition:
VDS = 6 V, IDQ = 180 mA, ZO = 50
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)
Test condition:
VDS = 6 V, IDQ = 180 mA, ZO = 50
1000 to 2500 MHz (100 MHz step)
90
Scale: 0.01 / div.
.8
60
120
.6
1.5
2
.4
3
30
150
4
5
.2
10
180
.2
.4
.6 .8 1
1.5 2
3 45
10
-10
-5
-4
-.2
-30
-150
-3
-.4
-60
-120
-90
Test condition:
VDS = 6 V, IDQ = 180 mA, ZO = 50
1000 to 2500 MHz (100 MHz step)
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
-2
-.6
-.8
-1
-1.5
Test condition:
VDS = 6 V, IDQ = 180 mA, ZO = 50
1000 to 2500 MHz (100 MHz step)
Page 17 of 21
RQA0009TXDQS
Preliminary

.8
.6
Scale: 5 / div.
90
1.5
60
120
2
.4
3
30
150
4
5
.2
10
.2
.4
.6 .8 1
1.5 2
3 45
10
180
-10
-5
-4
-.2
-.4
-30
-150
-3
-2
-.6
-.8
-1
-60
-120
-1.5
-90
Test condition:
VDS = 4.8 V, IDQ = 300 mA, ZO = 50
1000 to 2500 MHz (100 MHz step)
Test condition:
VDS = 4.8 V, IDQ = 300 mA, ZO = 50
1000 to 2500 MHz (100 MHz step)
90
Scale: 0.01 / div.
.8
60
120
.6
1.5
2
.4
3
30
150
4
5
.2
10
180
.2
.4
.6 .8 1
1.5 2
3 45
10
-10
-5
-4
-.2
-30
-150
-3
-.4
-60
-120
-90
Test condition:
VDS = 4.8 V, IDQ = 300 mA, ZO = 50
1000 to 2500 MHz (100 MHz step)
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
-2
-.6
-.8
-1
-1.5
Test condition:
VDS = 4.8 V, IDQ = 300 mA, ZO = 50
1000 to 2500 MHz (100 MHz step)
Page 18 of 21
RQA0009TXDQS
Preliminary
S Parameter
(VDS = 6 V, IDQ = 180 mA, Zo = 50 )
f (MHz)
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
2400
2450
2500
S11
MAG
ANG (deg.)
S21
MAG
ANG (deg.)
S12
MAG
ANG (deg.)
S22
MAG
ANG (deg.)
0.868
0.861
0.882
0.892
0.899
0.910
0.918
0.926
0.932
0.936
0.940
0.941
0.944
0.945
0.944
0.944
0.943
0.943
0.946
0.949
0.951
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.953
0.958
0.965
0.963
0.956
0.950
0.944
0.936
0.932
0.932
0.929
0.923
0.917
9.85
5.42
3.64
2.64
2.06
1.61
1.28
1.04
0.84
0.73
0.62
0.54
0.45
0.41
0.37
0.31
0.30
0.26
0.23
0.22
0.21
0.18
0.18
0.16
0.14
0.14
0.13
0.12
0.11
0.11
0.10
0.10
0.09
0.08
0.08
0.08
0.07
0.07
0.07
0.07
0.06
0.06
0.06
0.06
0.05
0.05
0.05
0.05
0.05
0.019
0.018
0.016
0.016
0.014
0.013
0.013
0.011
0.010
0.009
0.008
0.007
0.006
0.006
0.005
0.004
0.004
0.003
0.003
0.003
0.004
0.004
0.004
0.005
0.005
0.006
0.006
0.007
0.008
0.008
0.009
0.009
0.010
0.010
0.011
0.011
0.012
0.012
0.013
0.013
0.014
0.014
0.015
0.015
0.016
0.016
0.017
0.017
0.017
0.706
0.725
0.755
0.768
0.792
0.805
0.827
0.840
0.855
0.869
0.880
0.892
0.901
0.906
0.915
0.919
0.929
0.930
0.936
0.940
0.943
0.944
0.950
0.951
0.949
0.956
0.958
0.957
0.956
0.959
0.960
0.960
0.962
0.967
0.968
0.965
0.967
0.976
0.972
0.972
0.976
0.981
0.977
0.977
0.978
0.981
0.977
0.977
0.980
-154.0
-159.4
-163.9
-166.8
-169.5
-171.6
-173.4
-175.2
-176.8
-178.2
-179.5
179.2
178.1
176.9
175.9
174.6
173.4
172.3
171.1
170.2
169.4
168.7
167.8
167.0
166.2
165.4
164.6
164.0
163.3
162.1
160.8
159.7
158.5
157.3
156.4
155.7
154.7
153.9
153.6
153.3
152.9
152.2
151.6
150.7
149.3
148.1
147.3
146.3
144.9
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
88.8
77.2
68.2
58.5
51.8
45.1
40.3
36.0
31.8
28.8
26.4
23.1
20.2
18.3
16.4
13.9
12.1
10.6
8.6
7.3
6.5
5.3
4.3
3.7
2.2
1.3
0.8
0.1
-0.8
-1.8
-2.7
-3.6
-4.5
-4.7
-5.0
-4.7
-4.9
-5.2
-4.6
-4.9
-4.2
-3.5
-3.8
-3.5
-3.4
-3.6
-3.0
-3.6
-3.0
1.2
-6.3
-14.1
-19.2
-22.1
-27.2
-29.3
-34.1
-33.1
-34.5
-34.6
-36.5
-32.7
-32.0
-25.3
-22.3
-15.2
0.3
9.1
20.6
36.9
40.3
52.0
53.2
56.8
60.9
64.0
62.2
65.4
65.9
65.6
65.9
66.6
66.2
66.5
66.5
67.0
67.0
65.5
65.4
65.3
65.2
63.9
63.9
63.0
62.8
63.0
61.3
61.8
-166.8
-168.9
-170.6
-170.6
-171.2
-171.5
-172.2
-173.1
-173.8
-174.6
-175.6
-176.5
-177.3
-178.0
-179.4
180.0
178.9
178.1
177.2
176.5
175.5
174.7
174.1
173.3
172.6
171.7
171.0
170.3
169.5
168.5
168.2
167.4
166.4
165.8
165.3
164.5
163.7
163.2
162.9
161.9
161.0
160.7
160.1
159.5
158.9
158.4
158.0
157.2
156.8
Page 19 of 21
RQA0009TXDQS
Preliminary
S Parameter
(VDS = 4.8 V, IDQ = 300 mA, Zo = 50 )
f (MHz)
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
2400
2450
2500
S11
MAG
ANG (deg.)
S21
MAG
ANG (deg.)
S12
MAG
ANG (deg.)
S22
MAG
ANG (deg.)
0.772
0.794
0.812
0.818
0.824
0.831
0.836
0.841
0.848
0.851
0.851
0.852
0.854
0.858
0.865
0.873
0.878
0.880
0.882
0.886
0.889
0.893
0.898
0.902
0.901
0.902
0.904
0.907
0.904
0.905
0.912
0.915
0.919
0.926
0.938
0.942
0.942
0.945
0.946
0.942
0.939
0.940
0.942
0.939
0.937
0.937
0.935
0.932
0.931
9.63
5.54
3.91
2.98
2.36
1.92
1.60
1.36
1.15
1.00
0.87
0.77
0.69
0.60
0.54
0.49
0.45
0.41
0.37
0.35
0.32
0.29
0.27
0.26
0.23
0.22
0.21
0.19
0.18
0.17
0.16
0.15
0.14
0.14
0.13
0.13
0.12
0.11
0.11
0.11
0.10
0.10
0.09
0.09
0.08
0.08
0.08
0.07
0.07
0.013
0.013
0.012
0.011
0.011
0.011
0.010
0.009
0.008
0.008
0.007
0.006
0.006
0.005
0.005
0.005
0.004
0.004
0.004
0.004
0.004
0.004
0.004
0.005
0.005
0.005
0.006
0.006
0.007
0.007
0.007
0.008
0.008
0.009
0.009
0.010
0.010
0.010
0.011
0.011
0.012
0.012
0.012
0.013
0.013
0.014
0.014
0.014
0.014
0.776
0.784
0.799
0.805
0.818
0.824
0.837
0.843
0.859
0.868
0.874
0.887
0.896
0.901
0.905
0.911
0.918
0.922
0.932
0.931
0.935
0.939
0.944
0.943
0.948
0.948
0.954
0.954
0.953
0.958
0.959
0.956
0.958
0.964
0.965
0.963
0.965
0.968
0.965
0.969
0.973
0.974
0.974
0.974
0.976
0.977
0.972
0.975
0.977
-157.0
-162.8
-167.3
-170.4
-173.1
-175.0
-176.6
-178.3
-179.9
179.0
177.7
176.3
174.7
173.3
171.9
170.8
169.8
168.8
167.7
166.5
165.5
164.4
163.3
162.4
161.3
160.0
158.7
157.7
156.5
155.1
153.8
152.8
151.5
149.9
148.8
147.9
146.7
145.5
144.7
143.7
142.3
140.9
139.8
138.3
136.8
135.4
134.1
132.8
131.3
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
88.9
79.0
71.6
64.7
59.1
53.6
48.7
44.8
40.5
37.1
33.9
30.7
27.9
24.8
22.3
20.2
17.9
16.1
14.2
12.4
10.7
8.9
7.5
6.2
4.7
3.3
1.8
0.4
-0.8
-2.4
-3.1
-4.2
-5.8
-6.8
-7.8
-8.6
-9.3
-10.2
-10.6
-11.2
-11.8
-12.5
-13.3
-14.3
-15.3
-16.3
-17.5
-18.1
-18.7
-1.0
-6.3
-11.1
-13.5
-15.2
-20.4
-21.4
-23.3
-22.9
-22.2
-24.8
-24.2
-20.5
-18.2
-15.1
-12.2
-1.7
4.3
11.2
21.6
29.8
33.2
40.9
46.7
50.8
54.5
57.8
55.3
60.5
62.1
61.1
64.3
63.2
62.7
63.0
62.6
61.9
63.8
62.4
62.2
61.2
62.0
61.3
59.2
59.6
59.8
58.9
57.9
57.7
-172.1
-173.8
-174.8
-174.8
-175.0
-175.1
-175.4
-175.8
-176.8
-177.1
-177.4
-177.8
-178.8
-179.1
-179.8
179.5
178.9
178.3
177.8
177.1
176.5
175.8
175.1
174.6
174.1
173.4
173.1
172.5
171.6
171.0
170.7
170.4
169.3
168.9
168.4
167.8
167.0
166.6
166.3
165.5
164.9
164.6
164.2
163.4
163.0
162.9
162.0
161.5
161.2
Page 20 of 21
RQA0009TXDQS
Preliminary
Package Dimensions
1.5 1.5
3.0
MASS[Typ.]
0.050g
1.5 0.1
0.44 Max
2.5 0.1
4.25 Max
0.53 Max
0.48 Max
0.8 Min
0.4
4.5 0.1
1.8 Max
Previous Code
UPAK / UPAKV
Unit: mm
(1.5)
0.44 Max
(0.2)
RENESAS Code
PLZZ0004CA-A
(2.5)
JEITA Package Code

SC-62
(0.4)
Package Name
UPAK
Ordering Information
Orderable Part Number
RQA0009TXTL-E
R07DS0492EJ0200 Rev.2.00
Jun 29, 2011
Quantity
1000 pcs.
Shipping Container
178 mm reel, 12 mm emboss taping
Page 21 of 21
Notice
1.
All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
2.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
3.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
5.
When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and
regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to
the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable domestic or foreign laws or regulations.
6.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
7.
Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
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Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.
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designed for life support.
"Specific":
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Dsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
2011 Renesas Electronics Corporation. All rights reserved.

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Preliminary Datasheet

Silicon N-Channel MOS FET

Absolute Maximum Ratings

Note: Value at Tc = 25C

Power Added Efficiency

Power Added Efficiency

Power Added Efficiency

Power Added Efficiency

Power Added Efficiency

Power Added Efficiency

Power Added Efficiency

Power Added Efficiency

Drain Current ID (A)

Channel Power Dissipation Pch (W)

Maximum Channel Power

Case Temperature TC (C)

Drain to Source Voltage VDS (V)

Forward Transfer Admittance |yfs| (S)

Drain Current ID (A)

Typical Transfer Characterisitics

Drain Current ID (A)

Input Capacitance vs.

Output Capacitance vs.

Output Capacitance Coss (pF)

Gate to Source Voltage VGS (V)

Drain to Source Voltage VDS (V)

Reverse Transfer Capacitance vs.

MSG, MAG vs. Frequency

Drain to Gate Voltage VDG (V)

Maximum Stable Gain MSG (dB)

Input Capacitance Ciss (pF)

Gate to Source Voltage VGS (V)

Reverse Transfer Capacitance Crss (pF)

Evaluation Circuit 1 (@VDD = 3.6 & 7.0V Tuning, f = 155 MHz)

100 pF Chip Capacitor

Output Power, Drain Current

Input Power Pin (dBm)

Input Power Pin (dBm)

Output Power, Drain Current

Power Gain, Power Added Efficiency

Power Gain PG (dB)

Drain Current ID (A)

Power Gain PG (dB)

Drain Current ID (A)

Output Power Pout (dBm)

Power Added Efficiency PAE (%)

Output Power Pout (dBm)

Power Gain, Power Added Efficiency

Power Added Efficiency PAE (%)

C1, C3, C10, C11

Output Power, Drain Current

Power Gain, Power Added Efficiency

Power Gain PG (dB)

Drain Current ID (A)

Idling Current IDQ (mA)

Idling Current IDQ (mA)

Output Power, Drain Current

Power Gain, Power Added Efficiency

Input Power Pin (dBm)

Power Gain PG (dB)

Drain to Source Voltage VDS (V)

Drain to Source Voltage VDS (V)

Power Added Efficiency PAE (%)