Si4542DY

30V Complementary PowerTrenchMOSFET

General Description

Features

This complementary MOSFET device is produced using

Fairchilds advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.

Q1: N-Channel
RDS(on) = 28 m @ VGS = 10V

6 A, 30 V

RDS(on) = 35 m @ VGS = 4.5V

Applications

Q2: P-Channel
6 A, 30 V

RDS(on) = 32 m @ VGS = 10V

DC/DC converter

RDS(on) = 45 m @ VGS = 4.5V

Power management

DD2
DD2

D1
D

DD1

G2
S2 G

G1
S1 S

Drain-Source Voltage
Gate-Source Voltage

ID

Drain Current

TA = 25C unless otherwise noted

Parameter

VDSS
VGSS

Absolute Maximum Ratings

Q1

- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation

(Note 1a)

Q2

Units

30

30

20
6
20

20
6
20

V
V
A

2
1.6
1.2
1
55 to +175

(Note 1a)

78

C/W

(Note 1)

40

C/W

(Note 1a)
(Note 1b)
(Note 1c)

TJ, TSTG

3
Q1

Pin 1 SO-8

PD

SO-8

Symbol

Q2

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA

Thermal Resistance, Junction-to-Ambient

RJC

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

4542

Si4542DY

13

12mm

2500 units

2001 Fairchild Semiconductor International

Si4542DY Rev A

Si4542DY

January 2001

Symbol

TA = 25C unless otherwise noted

Parameter

Test Conditions

Type

Min Typ Max Units

Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS

VGS = 0 V, ID = 250 A
VGS = 0 V, ID = 250 A
ID = 250 A, Referenced to 25C
ID = 250 A, Referenced to 25C
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V
VGS = +20 V, VDS = 0 V
VGS = +20 V, VDS = 0 V

Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2

30
30

VDS = VGS, ID = 250 A

VDS = VGS, ID = 250 A
Gate Threshold Voltage
ID = 250 A, Referenced to 25C
Temperature Coefficient
ID = 250 A, Referenced to 25C
Static Drain-Source
VGS = 10 V, ID = 6 A
On-Resistance
VGS = 10 V, ID = 6 A, TJ = 125C
VGS = 4.5 V, ID = 5 A
VGS = 10 V, ID = 6 A
VGS = 10 V, ID = 6 A, TJ = 125C
VGS = 4.5 V, ID = 5 A
On-State Drain Current
VGS = 10 V, VDS = 5 V
VGS = 10 V, VDS = 5 V
Forward Transconductance VDS = 15 V, ID = 6 A
VDS = 10 V, ID = 6 A

Q1
Q2
Q1
Q2
Q1

1
1

Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage

On Characteristics
VGS(th)
VGS(th)
TJ
RDS(on)

ID(on)
gFS

V
23
21

mV/C
1
1
+100
+100

A
nA

(Note 2)

Gate Threshold Voltage

Q2

Q1
Q2
Q1
Q2

1.5
1.7
4
4
19
32
25
21
29
30

3
3

V
mV/C

28
48
35
32
51
45

20
20

A
18
16

830
1540
185
400
80
170

pF

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer
Capacitance

Q1
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Q2
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz

Electrical Characteristics
Symbol

Parameter

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

(continued)

Gate-Drain Charge

Q1
Q2
Q1
Q2
Q1
Q2

pF
pF

TA = 25C unless otherwise noted

Test Conditions

Type Min Typ

Max Units

(Note 2)

Q1
VDS = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6
Q2
VDS = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
Q1
VDS = 15 V, ID = 7.5 A, VGS = 5 V
Q2
VDS = 10 V, ID = 6 A, VGS = 5V

Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2

6
13
10
22
18
47
5
18
9
15
2.8
4
3.1
5

12
24
18
35
29
75
12
30
13
20

ns
ns
ns
ns
nC
nC
nC

Si4542DY Rev A

Si4542DY

Electrical Characteristics

IS

Maximum Continuous Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2)

Voltage
VGS = 0 V, IS = 1.3 A (Note 2)

Q1
Q2
Q1
Q2

0.7
0.7

1.3
1.3
1.2
1.2

A
V

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) 78C/W when
mounted on a
0.5 in2 pad of 2 oz
copper

b) 125C/W when
2
mounted on a .02 in
pad of 2 oz copper

c) 135C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%

Si4542DY Rev A

Si4542DY

Drain-Source Diode Characteristics and Maximum Ratings

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
FACT
FACT Quiet Series

FAST
FASTr
GlobalOptoisolator
GTO
HiSeC
ISOPLANAR
LittleFET
MicroFET
MICROWIRE
OPTOLOGIC
OPTOPLANAR

PACMAN
POP
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
SILENT SWITCHER
SMART START
Star* Power
Stealth

SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
UHC
UltraFET
VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H1