ST 2N2222 / 2N2222A

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications.
The transistor is subdivided into one group
according to its DC current gain. As complementary
type the PNP transistor ST 2N2907 and ST
2N2907A are recommended.
On special request, these transistors can be
manufactured in different pin configurations.

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (Ta = 25 OC)

Value

Symbol

Unit

ST 2N2222 ST 2N2222A
Collector Base Voltage

VCBO

60

75

Collector Emitter Voltage

VCEO

30

40

Emitter Base Voltage

VEBO

Collector Current

IC

600

mA

Power Dissipation

Ptot

625

mW

Junction Temperature

Tj

150

Storage Temperature Range

TS

-55 to +150

C
C

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 05/10/2005

ST 2N2222 / 2N2222A
Characteristics at Tamb=25 OC
Symbol

Min.

Typ.

Max.

Unit

at IC=0.1mA, VCE=10V

hFE

35

at IC=1mA, VCE=10V

hFE

50

at IC=10mA, VCE=10V

hFE

75

at IC=150mA, VCE=10V

hFE

100

300

ST 2N2222

hFE

30

ST 2N2222A

hFE

40

at VCB=50V

ST 2N2222

ICBO

0.01

at VCB=60V

ST 2N2222A

ICBO

0.01

ST 2N2222

V(BR)CBO

60

ST 2N2222A

V(BR)CBO

75

ST 2N2222

V(BR)CEO

30

ST 2N2222A

V(BR)CEO

40

ST 2N2222

V(BR)EBO

ST 2N2222A

V(BR)EBO

ST 2N2222

VCE(sat)

0.4

ST 2N2222A

VCE(sat)

0.3

ST 2N2222

VCE(sat)

1.6

ST 2N2222A

VCE(sat)

ST 2N2222

VBE(sat)

1.3

ST 2N2222A

VBE(sat)

0.6

1.2

ST 2N2222

VBE(sat)

2.6

ST 2N2222A

VBE(sat)

2.0

fT

250

MHz

Cob

pF

Cib

30

pF

DC Current Gain

at IC=500mA, VCE=10V
Collector Cutoff Current

Collector Base Breakdown Voltage

at IC=10A

Collector Emitter Breakdown Voltage

at IC=10mA
Emitter Base Breakdown Voltage
at IE=10A
Collector Saturation Voltage
at IC=150mA, IB=15mA
at IC=500mA, IB=50mA
Base Saturation Voltage
at IC=150mA, IB=15mA
at IC=500mA, IB=50mA
Gain Bandwidth Product
at IC=20mA, VCE=20V, f=100MHz
Collector Output Capacitance
at VCB=10V, f=1MHz
Input Capacitance
at VCB=0.5V, f=1MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 05/10/2005

ST 2N2222 / 2N2222A

Figure 1. DC Current Gain

1000

h FE , DC CURRENT GAIN

700
500

TJ=125 C

300
200
25o C
100
70
50

-55o C

30

VCE=1.0V
VCE=10V

20
10
0.2

0.1

0.3

0.5 0.7

1.0

2.0

3.0

5.0 7.0

10

20

30

50 70

100

200

300

500 700 1.0 K

I C, COLLECTOR CURENT (mA)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 2. Collector Saturetion Region

1.0

TJ= 25o C

0.8

0.6
10mA

I C=1.0mA

500mA

150mA

0.4

0.2

0
0.005

0.01

0.02

0.03 0.05

0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

10

20

30

50

I B, BASE CURENT (mA)

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 05/10/2005

Figure 3. Capacitances
30
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1

0.2 0.3 0.5 0.71.0 2.0 3.0 5.0 7.0 10

20 30 50

f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

ST 2N2222 / 2N2222A

Figure 4. Current-Gain Bandwidth Product

500
VCE=20V
TJ = 25o C
300
200

100
70
50
1.0

REVERSE VOLTAGE (VOLTS)

2.0 3.0

5.0 7.0 10

20 30

50 70 100

I C, COLLECTOR CURRENT (mA)

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 05/10/2005