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VDSS
HiPerFET
Power MOSFETs
TM
IXFH8N80 800V
IXFH9N80 800V
ID25
RDS(on)
trr
8A
9A
1.1
0.9
250 ns
250 ns
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
800
VDGR
800
VGS
Continuous
20
VGSM
Transient
30
ID25
TC = 25C
IDM
IAR
TC = 25C
8
9
32
36
8
9
A
A
A
A
A
A
EAR
TC = 25C
18
mJ
dv/dt
V/ns
PD
TC = 25C
180
8N80
9N80
8N80
9N80
8N80
9N80
TJM
150
Tstg
TJ
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
VDSS
VGS(th)
Test Conditions
IDSS
RDS(on)
Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ.
max.
800
V
%/K
0.088
2
4.5
-0.257
TJ = 25C
TJ = 125C
G = Gate
S = Source
8N80
9N80
V
%/K
100
nA
250
1
A
mA
1.1
0.9
D (TAB)
S
D = Drain
TAB = Drain
Features
VGS = 0 V, ID = 3 mA
VDSS temperature coefficient
IGSS
300
TO-247 SMD*
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
IXFH8N80
IXFH9N80
Test Conditions
Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.
gfs
Ciss
2600
pF
240
pF
Crss
60
pF
td(on)
35
ns
Coss
tr
15
ns
td(off)
RG = 4.7 (External)
70
ns
tf
35
ns
Qg(on)
85 130
nC
15
30
nC
40
70
nC
0.7
K/W
Qgs
Qgd
RthJC
RthCK
0.25
K/W
Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0
8N80
9N80
8
9
A
A
I SM
8N80
9N80
32
36
A
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t 300 s, duty cycle 2 %
1.5
250
400
ns
ns
trr
Q RM
I RM
IF = IS
-di/dt = 100 A/s,
VR = 100 V
TJ = 25C
TJ = 125C
TJ = 25C
TJ = 125C
0.5
1.0
C
C
TJ = 25C
TJ = 125C
7.5
9.0
A
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
1. Gate
2. Drain
3. Source
4. Drain
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190
.090
.075
.205
.100
.085
b
b1
1.14
1.91
1.40
2.13
.045
.075
.055
.084
C
D
0.61
20.80
0.80
21.34
.024
.819
.031
.840
E
e
15.75
5.45
16.13
BSC
.620
.215
.635
BSC
L
L1
L2
L3
L4
4.90
2.70
2.10
0.00
1.90
5.10
2.90
2.30
0.10
2.10
.193
.106
.083
.00
.075
.201
.114
.091
.004
.083
P
Q
3.55
5.59
3.65
6.20
.140
.220
.144
.244
R
S
4.32
6.15
4.83
BSC
.170
.242
.190
BSC
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFH8N80
Figure 1. Output Characteristics at 25OC
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025