UNIVERSIDAD POLITECNICA DEATLACOMULCO

ENGINEERING ROBOTICA
ALUMNO:
DAVID MARTINEZ GONZALEZ
DANIEL MATEO ANTONIO
FERNANDO JOSE GARCIA

semester: 4 "401" - T.M.

Teacher: ING. HILARIO MAURITIUS CELESTINO

PRCTICA 2: TRANSITORES
Electrnica analgica

RETURN TO INDEX

INTRODUCTION ---------------------------------------------------------------------------2

GENERAL OBJECTIVE ------------------------------------------------------------------2

JUSTFICACION----------------------------------------------------------------------------2

THEORETICAL BASIS ---------------------------------------------------------------3-8

METHODOLOGY--------------------------------------------------------------------------8

MATERIAL AND EQUIPMENT --------------------------------------------------------8

DEVELOPMENT OF THE PROJECT ---------------------------------------------9-16

RESULTS--------------------------------------------------------------------------------16-17

CONCLUSIONS------------------------------------------------------------------------17-18

REFERENCES ---------------------------------------------------------------------------18

1 INTRODUCTION
A career in engineering Robotica is characterized by its continuous evolution through
time, in such a way that there is always to be updating knowledge and designing
new ideas. Therefore, to keep in line with the new, you must have a strong base
and solid in the knowledge that allow to understand the changes and join these. In
this way, the electronic is a fundamental tool for the development of the engineer.
With the purpose of introducing the design, assembly and test of electronic circuits
are designed to generate a project to familiarize themselves with the work in the
laboratory.

In this report will be handed the information and theory required to that to tackle
the practical experience in a correct manner and prepared so as not to make
mistakes and if exist, be able to fix them as quickly as possible making relevant
simulations and analysis both theory and the simulation itself.

2 OBJECTIVE

Get to know the different operating modes of the bipolar transistor and the
characteristics that presents this device to operate in each one of these
modes (areas of operation).
Analyze theoretically and in the form of an experimental bias circuits with
bipolar transistors and identify the area of operation in each case.

3 JUSTIFICATION
The study of the electronic devices constitutes the fundamental platform of the
engineering student in Electronic Instrumentation. Analyze, design, implement and
simulate electronic circuits with transistors, are skills necessary to ensure that the
student will be able to design amplifiers of low and high frequency and low and high
power.

4 THEORETICAL
The bipolar transistor or BJT is a device of three layers of semiconductor material.
Figure 1 shows a physical representation of the basic structure of two types of bipolar
transistor: NPN and PNP, in this figure are also illustrated their respective electrical
symbols. The NPN Bipolar Transistor contains a thin region p between two regions
n. While the PNP bipolar transistor contains a thin region n between two regions p.
The intermediate layer of semiconductor material is known as the region of the base,
while the outer layers make up the regions of manifold and issuer. These are
associated with the terminals of base, collector and emitter respectively.

Figure 1. Physical representation of the basic structure of two types of bipolar

transistors: NPN and PNP, and their respective electrical symbols.

The currents in a transistor are 3, base current Ib, current of issuer Ie and manifold
current IC. In the picture we see the currents of a transistor type
NPN.

Polarization of a transistor
Polarize is to apply the appropriate voltages to the components to work correctly.
A PIN P will be polarized if directly connects to positive battery, pin N will be polarized
if directly connects to the negative pole. The setback would be polarized inversely.
There is a very wide range of transistors, so before you connect we must identify its
3 pins and know if is PNP or NPN. In the NPN transistors must be connected to the
positive pole the manifold and the basis and in the PNP the manifold and the basis
of the negative pole.
The European BASE-sender whenever polarized directly, and the European
collector-BASE
whenever
polarized
inversely
in
both
cases.

Modes of operation and applications

Depending on the polarization of the two connections PN that comprise the bipolar
transistors, these can operate normally in three areas of operation: Cut zone, active
zone and zone of saturation. For Applications of transistors as amplifier is necessary
4

to operate the device in the active zone. To use the transistor as an electronic switch
is required to operate it in the cutting areas (as switch off) and saturation (as switch
on). Below is a brief description of each of these areas of operation.
Operation on the area to be cut. In this area there is a very small amount of current
when driving from the sender to the manifold, behaving the transistor in a similar
manner to an open circuit. The characteristic that defines the area to be cut is that
both connections, both the European collector-base as the European base-emitter,
are polarized inversely.
Operation in the area of saturation. In the saturation zone circulates a large
amount of current from the manifold to the sender and you have only a small voltage
drop between these terminals. The behavior of a transistor is analogous to that of a
switch closed. This area is characterized because the manifold connections-base
and base-emitter are polarized directly.
Operation in the active region. The active region of the bipolar transistor is the
area that is used to use the device as an amplifier. The defining characteristic of the
active region is that the European collector-base this polarized inversely, while the
European base-emitter is polarized in direct form

Configuration of common basis. In this configuration, the terminal of the base is

common to the sides of entry (Sender) and output (Manifold), and usually connects
to a potential ground (or is closest to this potential). This configuration is illustrated
in Figure 2. The voltage source VBB provides direct polarization to connection B-E
and controls the flow of the issuer IE.

Figure 2. Circuit configuration of common basis for a PNP transistor

In this configuration, the feature of current-voltage input, relates the input
current IE with an input voltage VEB (or VBE to an NPN Transistor). This feature can
be seen in figure 3(a). In turn, the feature of current-voltage output relates the output
current IC with an output voltage VBC (or VCB for a NPN Transistor) for several
levels of input current IE. This feature is introduced in Figure 3(b).

A) feature VI

b input) feature output VI

Figure 3. Current-voltage characteristics of the transistor in common base

configuration.

Settings in common emitter. The configuration of transistors that is most often

found is called Common Emitter settings, is so called because the issuer is common
to both the inlet side (Base) as the output (manifold). Figure 4 illustrates a common
emitter circuit with a NPN Transistor. In this circuit, the source VBB polarizes directly
6

the European B-E and controls the flow of base. The voltage C-E can vary by
changing VDC.

Figure 4. Settings in common emitter with a NPN Transistor.

In this configuration is also in need of two characteristics of the transistor to describe
their behavior (see Figure 5 (a) and 5 (b)). The first corresponds to the ratio of input,
which is a graph of the input stream IB against the input voltage VBE (or
voltage VEB for a PNP transistor). The second is the relationship between the output
current IC against the output voltage VCE (or voltage VEC for a PNP transistor) for
various constant values of the base current IB.

A) feature VI

b input) feature output VI

Figure 5. Current-voltage characteristics of a transistor in Common Emitter Settings

Settings in common manifold. This type of configuration is used primarily for

purposes of coupling of impedances as it has a high input impedance and a low
output impedance, this being the opposite of the configurations of common base and
common emitter. Output characteristics of the common manifold configuration are
the same as those of common emitter.

5 METHODOLOGY

Research on transistors
Troubleshooting, analysis and design of applications by the student.
Development of laboratory practices by the student.
Circuit Simulation

6 MATERIAL AND EQUIPMENT

1 Multimeter
1 DC Power Supply
1 transitor BC547TO
1 Protoboard

1 resistance 3.9 k
1 resistance 560 k

7 DEVELOPMENT OF THE PROJECT

First practice
Circuit assembly that is shown in the simulations to start the measurement of
values.

The circuit take a source of voltage of 14 volts cd .

To have the circuit fitted with components in the next step is to get the data at
each point of the transistor which are base issuer and manifold.

Voltage at the manifold

Simulation

10

Current in the base

Simulation

11

Current in the manifold

Simulation

12

Current in the Issuer

Simulation

13

Second Practice
In the second practice has as its aim is to calculate RB, RE AND RC
VC=18 volts
Vdc=28 volts
Ic=4Ma

Simulations:

14

15

8 RESULTS
Practice 1
*For Mesh B-C
IC=B*IC
IB=(VC-VD)/560K
=(4.656-0.7)56000
IB=7.062mA
For Mesh C-E
Vin=IC*Rc+VCE
Vin=IC+RC+VCE
IC=B*IB
Vin=B*IBRC+VCE
14=BIB(RC)+VCE
VCE=VE-VC
See=0
VCE=VC=4.565V

16

For B and IC
IC=B*IB
IC=(VIN-VC)/RC
=(14-4.656)/39K
IC=2.39mA
IC=B*IB
B=IC/IB
B=339.26

Practice 2
VC=VC=ICRC
RC=(VDC-VC)/IC
IC=B*IB
IC=2,608pA
IB=IC/B
IB=1.8mA
IE=IE/B
IE=216.6pA
For Mesh B-C
VBC=IBRB+0.71+erred
IE=(B+1)Ib
See=IERC
RE=(VE)/IE
RE=3.6K
RC=(VC-VD)/IC
RC=5.2K
RB=(CV)/IB
RB=1.6K

9 CONCLUSIONS
DANIEL MATTHEW ANTONIO
Transistors are a few elements that have facilitated, in large measure, the
design of electronic circuits of small size, great versatility and ease of
control.

With the development of this work in addition to consolidate the work in

team and consolidate our investigative capabilities provided us with
important knowledge in some cases in the form of general culture, and other
occasions specific knowledge about the diodes and each one of the most
well known types.
17

DAVID MARTINEZ GONZALEZ

We can say that the emergence of the diodes has provided a significant
advance in science not only to the electronics but to science in general
because almost all computers that we currently work with electrical
components and with presence of transistors.

FERNADO JOSE GRACIA

As we have already seen in the report we have known the variety of

applications of transistors and their use in the composition of electronic
systems.
We have also made how to use, measure and understand the applications
of transistors and their composite materials and instruments to take
readings.

10 BIBLIOGRAPHY.

Http://www.electronica2000.com
Http: //areaelectronica.com/ transistors/transistors, transistor, theory..htm

18