UNISONIC TECHNOLOGIES CO.

, LTD
8N80

Power MOSFET

8A, 800V N-CHANNEL

POWER MOSFET

DESCRIPTION

The UTC 8N80 is an N-channel mode power MOSFET, it uses

UTCs advanced technology to provide costumers planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance, superior switching performance. It also can withstand high
energy pulse in the avalanche and commutation mode.
The UTC 8N80 is generally applied in high efficiency switch mode
power supplies.

FEATURES

* Typically 35 nC Low Gate Charge

* RDS(ON) = 1.45 @VGS = 10V
* Typically 13 pF Low CRSS
* Improved dv/dt Capability
* Fast Switching Speed
* 100% Avalanche Tested
* RoHSCompliant Product

SYMBOL
2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number
Lead Free
Halogen Free
8N80L-TA3-T
8N80G-TA3-T
8N80L-TF3-T
8N80G-TF3-T
8N80L-TF1-T
8N80G-TF1-T
8N80L-TF2-T
8N80G-TF2-T
Note: Pin Assignment: G: GND, D: Drain, S: Source

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Copyright 2013 Unisonic Technologies Co., Ltd

Package
TO-220
TO-220F
TO-220F1
TO-220F2

Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S

Packing
Tube
Tube
Tube
Tube

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ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise specified)

PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800
V
Gate-Source Voltage
VGSS
30
V
Drain Current (Continuous) (TC=25C)
ID
8
A
Drain Current (Pulsed) (Note 1)
IDM
32
A
Avalanche Current (Note 1)
IAR
8
A
Single Pulse Avalanche Energy (Note 2)
EAS
850
mJ
Repetitive Avalanche Energy (Note 1)
EAR
17.8
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TO-220
178
Power Dissipation
TO-220F/TO-220F1
59
W
TO-220F2
62
PD
TO-220
1.43
Linear Derating Factor above
TO-220F/TO-220F1
0.47
W/C
TC=25C
TO-220F2
0.5
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25 , Starting TJ = 25C
3. ISD 8A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied

THERMAL DATA
PARAMETER

SYMBOL
JA

Junction to Ambient
Junction to Case

TO-220
TO-220F/TO-220F1
TO-220F2

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

JC

RATINGS
62.5
0.7
2.1
2.0

UNIT
C/W
C/W

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ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified)

PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250A, VGS=0V
Breakdown Voltage Temperature Coefficient BVDSS/TJ Reference to 25C, ID=250A
VDS=800V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=640V, TC=125C
Gate- Source Leakage Current
IGSS
VGS=30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250A
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=4A
Forward Transconductance (Note 1)
gFS
VDS=50V, ID=4A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V,
Output Capacitance
COSS
f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note 1, Note 2)
Total Gate Charge
QG
VGS=10V, VDS=640V,
Gate to Source Charge
QGS
ID=8A
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=400V, ID=8A,
RG=25
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
IS=8A, VGS=0V
Reverse Recovery Time (Note 1)
trr
IS=8A, VGS=0V,
dIF/dt=100A/s
Reverse Recovery Charge (Note 1)
QRR
Note: 1. Pulse Test: Pulse width 300s, Duty cycle 2%
2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

MIN

TYP MAX UNIT

800

V
V/C

0.5
10
100
100
3.0

A
nA

5.0
1.18 1.45
5.6

1580 2050
135 175
13
17

pF
pF
pF

35
10
14
40
110
65
70

90
230
140
150

nC
nC
nC
ns
ns
ns
ns

32

1.4

V
ns
C

690
8.2

45

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TEST CIRCUITS AND WAVEFORMS

DUT

VDS

RG

L
ISD
VGS

VDD
Driver
Same Type
as DUT

dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms

VGS
(Driver
)

D=

Gate Pulse Width

Gate Pulse Period

10V

IFM, Body Diode Forward Current

ISD
(DUT)

di/dt
IRM
Body Diode Reverse Current

VDS
(DUT)

Body Diode Recovery dv/dt

VSD

VDD

Body Diode Forward

Voltage Drop

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TEST CIRCUITS AND WAVEFORMS(Cont.)

VGS

Same Type
as DUT
12V

QG

10V

200nF
50k

VDS

300nF

QGS

QGD

VGS
DUT
3mA
Charge
Gate Charge Test Circuit

Gate Charge Waveforms

Resistive Switching Test Circuit

Resistive Switching Waveforms

2
EAS= 1
2 LIAS

VDS
RG

BVDSS
BVDSS-VDD

BVDSS

ID

IAS

10V

ID(t)
DUT

tP

VDD

VDD

VDS(t)

tP

Unclamped Inductive Switching Test Circuit

UNISONIC TECHNOLOGIES CO., LTD

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Time

Unclamped Inductive Switching Waveforms

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Drain Current,ID (A)

Drain Current,ID (A)

Drain Current,ID (A)

Drain Current, ID (A)

TYPICAL CHARACTERISTICS

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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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www.unisonic.com.tw

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