Académique Documents
Professionnel Documents
Culture Documents
com
LM79XX
Description
GND
R1
VOLTAGE
REFERENCE
R2
Output
Out
+
Q1
Q2
I1
I2
PROTECTION
CIRCUITRY
Rsc
In
Input
Rev. 1.0.3
2011 Fairchild Semiconductor Corporation
LM79XX
Symbol
Value
Unit
VI
-35
RJC
RJA
65
TOPR
0 ~ +125
TSTG
-65 ~ +150
Input Voltage
C/W
Note:
1. Thermal resistance test board
Size: 76.2mm * 114.3mm * 1.6mm(1S0P)
JEDEC standard: JESD51-3, JESD51-7
2. Assume no ambient airflow
Quiescent Current
Quiescent Current Change
Temperature Coefficient of VD
Symbol
VO
VO
VO
IQ
IQ
Vo/T
Conditions
Min.
Typ.
Max.
TJ = +25C
-4.8
-5.0
-5.2
-4.75
-5.0
-5.25
VI = -7V to -25V
35
100
VI = -8V to -12V
50
TJ = +25C
IO = 5mA to 1.5A
10
100
TJ =+25C
IO = 250mA to 750mA
50
TJ =+25C
IO = 5mA to 1A
0.05
0.5
VI = -8V to -25V
0.1
0.8
IO = 5mA
- 0.4
mV/C
40
TJ = +25C
Unit
V
mV
mV
mA
mA
VN
f = 10Hz to 100kHz
TA =+25C
Ripple Rejection
RR
f = 120Hz
VI = 10V
54
60
dB
Dropout Voltage
VD
TJ = +25C
IO = 1A
ISC
TJ =+25C, VI = -35V
300
mA
Peak Current
IPK
TJ =+25C
2.2
Note
3. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
LM79XX
Quiescent Current
Quiescent Current Change
Temperature Coefficient of VD
Symbol
VO
VO
VO
IQ
IQ
Vo/T
Conditions
Min.
Typ.
Max.
TJ = +25C
-5.75
-6
-6.25
-5.7
-6
-6.3
VI = -8V to -25V
10
120
VI = -9V to -13V
60
TJ = +25C
IO = 5mA to 1.5A
10
120
TJ =+25C
IO = 250mA to 750mA
60
TJ =+25C
IO = 5mA to 1A
0.05
0.5
VI = -8V to -25V
0.1
1.3
IO = 5mA
-0.5
mV/C
130
TJ = +25C
Unit
V
mV
mV
mA
mA
VN
f = 10Hz to 100kHz
TA =+25C
Ripple Rejection
RR
f = 120Hz
VI = 10V
54
60
dB
Dropout Voltage
VD
TJ = +25C
IO = 1A
ISC
TJ = +25C, VI = -35V
300
mA
Peak Current
IPK
TJ = +25C
2.2
Note
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
LM79XX
Quiescent Current
Quiescent Current Change
Temperature Coefficient of VD
Symbol
VO
VO
VO
IQ
IQ
Vo/T
Conditions
Min.
Typ.
Max.
TJ = +25C
-7.7
-8
-8.3
-7.6
-8
-8.4
VI = -10.5V to -25V
10
160
VI = -11V to -17V
80
TJ = +25C
IO = 5mA to 1.5A
12
160
TJ =+25C
IO = 250mA to 750mA
80
TJ =+25C
IO = 5mA to 1A
0.05
0.5
VI = -10.5V to -25V
0.1
IO = 5mA
-0.6
mV/C
175
TJ = +25C
Unit
V
mV
mV
mA
mA
VN
f = 10Hz to 100kHz
TA =+25C
Ripple Rejection
RR
f = 120Hz
VI = 10V
54
60
dB
Dropout Voltage
VD
TJ = +25C
IO = 1A
ISC
TJ = +25C, VI = -35V
300
mA
Peak Current
IPK
TJ = +25C
2.2
Note
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
LM79XX
Quiescent Current
Quiescent Current Change
Temperature Coefficient of VD
Symbol
VO
VO
VO
IQ
IQ
Vo/T
Conditions
Min.
Typ.
Max.
TJ = +25C
-8.7
-9.0
-9.3
-8.6
-9.0
-9.4
VI = -11.5V to -26V
10
180
VI = -12V to -18V
90
TJ = +25C
IO = 5mA to 1.5A
12
180
TJ = +25C
IO = 250mA to 750mA
90
TJ = +25C
IO = 5mA to 1A
0.05
0.5
VI = -11.5V to -26V
0.1
IO = 5mA
-0.6
mV/C
175
TJ = +25C
Unit
V
mV
mV
mA
mA
VN
f = 10Hz to 100kHz
TA = +25C
Ripple Rejection
RR
f = 120Hz
VI = 10V
54
60
dB
Dropout Voltage
VD
TJ = +25C
IO = 1A
ISC
TJ = +25C, VI = -35V
300
mA
Peak Current
IPK
TJ = +25C
2.2
Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
LM79XX
Quiescent Current
Quiescent Current Change
Temperature Coefficient of VO
Symbol
VO
VO
VO
IQ
IQ
Vo/T
Conditions
Min.
Typ.
Max.
TJ = +25C
-9.6
-10
-10.4
-9.5
-10
-10.5
VI = -12.5V to -28V
12
200
VI = -14V to -20V
100
TJ = +25C
IO = 5mA to 1.5A
12
200
TJ = +25C
IO = 250mA to 750mA
100
TJ = +25C
IO = 5mA to 1A
0.05
0.5
VI = -12.5V to -28V
0.1
IO = 5mA
-1
mV/C
280
TJ = +25C
Unit
V
mV
mV
mA
mA
VN
10Hz f 100kHz
TA =+25C
Ripple Rejection
RR
f = 120Hz
VI = 10V
54
60
dB
Dropout Voltage
VD
TJ = +25C
IO = 1A
ISC
TJ = +25C, VI = -35V
300
mA
Peak Current
IPK
TJ = +25C
2.2
Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
LM79XX
Quiescent Current
Quiescent Current Change
Temperature Coefficient of VD
Symbol
VO
VO
VO
IQ
IQ
Vo/T
Conditions
Min.
Typ.
Max.
TJ = +25C
-11.5
-12
-12.5
-11.4
-12
-12.6
VI = -14.5V to -30V
12
240
VI = -16V to -22V
120
TJ = +25C
IO = 5mA to 1.5A
12
240
TJ = +25C
IO = 250mA to 750mA
120
TJ = +25C
IO = 5mA to 1A
0.05
0.5
VI = -14.5V to -30V
0.1
IO = 5mA
-0.8
mV/C
200
TJ = +25C
Unit
V
mV
mV
mA
mA
VN
f = 10Hz to 100kHz
TA = +25C
Ripple Rejection
RR
f = 120Hz
VI = 10V
54
60
dB
Dropout Voltage
VD
TJ = +25C
IO = 1A
ISC
TJ = +25C, VI = -35V
300
mA
Peak Current
IPK
TJ = +25C
2.2
Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
LM79XX
Quiescent Current
Quiescent Current Change
Temperature Coefficient of VD
Symbol
VO
VO
VO
IQ
IQ
Vo/T
Conditions
Min.
Typ.
Max.
TJ = +25C
-14.4
-15
-15.6
-14.25
-15
-15.75
VI = -17.5V to -30V
12
300
VI = -20V to -26V
150
TJ = +25C
IO = 5mA to 1.5A
12
300
TJ = +25C
IO = 250mA to 750mA
150
TJ = +25C
IO = 5mA to 1A
0.05
0.5
VI = -17.5V to -30V
0.1
IO = 5mA
-0.9
mV/C
250
TJ = +25C
Unit
V
mV
mV
mA
mA
VN
f = 10Hz to 100kHz
TA =+25C
Ripple Rejection
RR
f = 120Hz
VI = 10V
54
60
dB
Dropout Voltage
VD
TJ = +25C
IO = 1A
ISC
TJ = +25C, VI = -35V
300
mA
Peak Current
IPK
TJ = +25C
2.2
Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
LM79XX
Symbol
VO
VO
VO
Quiescent Current
IQ
IQ
Temperature Coefficient of VD
Vo/T
Conditions
Min.
Typ. Max.
TJ = +25C
-17.3
-18
-18.7
-17.1
-18
-18.9
VI = -21V to -33V
15
360
VI = -24V to -30V
180
TJ = +25C
IO = 5mA to 1.5A
15
360
TJ = +25C
IO = 250mA to 750mA
180
TJ = +25C
IO = 5mA to 1A
0.05
0.5
VI = -21V to -33V
0.1
IO = 5mA
-1
mV/C
300
TJ = +25C
Unit
V
mV
mV
mA
mA
VN
f = 10Hz to 100kHz
TA = +25C
Ripple Rejection
RR
f = 120Hz
VI = 10V
54
60
dB
Dropout Voltage
VD
TJ = +25C
IO = 1A
ISC
TJ = +25C, VI = -35V
300
mA
Peak Current
IPK
TJ = +25C
2.2
Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
LM79XX
Symbol
Conditions
Min.
Typ.
Max.
-23
-24
-25
-22.8
-24
-25.2
VI = -27V to -38V
15
480
VI = -30V to -36V
180
TJ = +25C
IO = 5mA to 1.5A
15
480
TJ = +25C
IO = 250mA to 750mA
240
TJ = +25C
IO = 5mA to 1A
0.05
0.5
VI = -27V to -38V
0.1
IO = 5mA
-1
mV/C
400
TJ = +25C
Output Voltage
Quiescent Current
Quiescent Current Change
Temperature Coefficient of VD
VO
VO
VO
IQ
IQ
Vo/T
Unit
V
mV
mV
mA
mA
VN
f = 10Hz to 100kHz
TA = +25C
Ripple Rejection
RR
f = 120Hz
VI = 10V
54
60
dB
Dropout Voltage
VD
TJ = +25C
IO = 1A
ISC
TJ = +25C, VI = -35V
300
mA
Peak Current
IPK
TJ = +25C
2.2
Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
10
LM79XX
15
Vin=10V
Io=40mA
Ou 5.05
tp
5
ut
Vo
lta 4.95
ge
[- 4.9
V]
Load Regulation[mV]
Output Voltage[-V]
5.1
Vin=25V
Io=100mA
4.85
Lo 13
ad 11
Re 9
gul 7
ati 5
on 3
[m
1
V]
Io=1.5A
Io=0.75A
-1
-3
4.8
-5
-40
-25
25
50
75
100
125
-40
-25
25
50
75
100
125
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
V l
[V]
3.5
3
2.5
2
1.5
Io=1A
1
0.5
0
-40
-25
0
25
50
75
100
TA, Ambient Temperature [oC]
125
-40
-25
25
50
75
100
125
0.6
0.55
Sh 0.5
ort 0.45
Cir 0.4
cui 0.35
0.3
t
0.25
Cu 0.2
rre 0.15
nt 0.1
[A] 0.05
0
-0.05
-0.1
-40
-25
25
50
75
100
125
11
LM79XX
Typical Applications
+ 2.2F
+ 1 F
CO
CI
2
- VI
KA79XX
LM79XX
Input
- VO
Output
+ 15V
MC7812
KA7812
+
C1
0.33F
- 15V
+
Co
1 F
+12V
1N4001
*
GND
+ 2.2F
C1
KA7912
LM7912
1 F +
Co
3
1N4001
*
-12V
12
LM79XX
Mechanical Dimensions
Package
Dimensions in millimeters
13
LM79XX
Ordering Information
Product Number
Package
Operating Temperature
4%
TO-220
(Single Gauge)
0 ~ +125C
LM7905CT
LM7906CT
LM7908CT
LM7909CT
LM7910CT
LM7912CT
LM7915CT
LM7918CT
LM7924CT
14
LM79XX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
www.fairchildsemi.com
9/7/11 0.0m 001
Stock#DS400021
2011 Fairchild Semiconductor Corporation