Smart High-Side Power Switch

BTS716G

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Data Sheet

Block Diagram

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V1.0, 2007-05-13

Smart High-Side Power Switch

BTS716G

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control and protection circuit

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control and protection circuit

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Data Sheet

V1.0, 2007-05-13

Smart High-Side Power Switch

BTS716G

Pin Definitions and Functions

Pin
1,10,
11,12,
15,16,
19,20
3
5
7
9
18
17
14
13
4
8
2
6

Data Sheet

Pin configuration

Symbol Function
Vbb
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
IN1
Input 1,2,3,4 activates channel 1,2,3,4 in case
of logic high signal
IN2
IN3
IN4
OUT1
Output 1,2,3,4 protected high-side power output
of channel 1,2,3,4. Design the wiring for the
OUT2
max. short circuit current
OUT3
OUT4
ST1/2
Diagnostic feedback 1/2,3/4 of channel 1,2,3,4
ST3/4
open drain, low on failure
GND1/2 Ground of chip 1 (channel 1,2)
GND3/4 Ground of chip 2 (channel 3,4)

(top view)

Vbb
GND1/2
IN1
ST1/2
IN2
GND3/4
IN3
ST3/4
IN4
Vbb

1
2
3
4
5
6
7
8
9
10

20
19
18
17
16
15
14
13
12
11

Vbb
Vbb
OUT1
OUT2
Vbb
Vbb
OUT3
OUT4
Vbb
Vbb

V1.0, 2007-05-13

Smart High-Side Power Switch

BTS716G

Parameter

Symbol

Supply voltage (overvoltage protection see page 6)

Supply voltage for full short circuit protection
Tj,start = -40 ...+150C
Load current (Short-circuit current, see page 6)
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V
RI2) = 2 , td = 400 ms; IN = low or high,
each channel loaded with RL = 13.5 ,
Operating temperature range
Storage temperature range
Power dissipation (DC)4)
Ta = 25C:
(all channels active)
Ta = 85C:
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150C4), see diagrams on page 10
IL = 2.3 A, EAS = 76 mJ, 0
one channel:
IL = 3.3 A, EAS = 182 mJ, 0
two parallel channels:
IL = 4.7 A, EAS = 460 mJ, 0
four parallel channels:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
ST:
out to all other pins shorted:

Vbb
Vbb

Values

Unit
43
36

V
V

IL
VLoad dump3)

self-limited
60

A
V

Tj
Tstg
Ptot

-40 ...+150
-55 ...+150
3.6
1.9

ZL

21
25
30

mH

VESD

1.0
4.0
8.0

kV

-10 ... +16

0.3
5.0
5.0

V
mA

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

R=1.5k; C=100pF

Input voltage (DC) see internal circuit diagram page 9

Current through input pin (DC)
Pulsed current through input pin5)
Current through status pin (DC)

1)
2)
3)
4)
5)

VIN
IIN
IIN
IST

Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended.
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
only for testing

Data Sheet

V1.0, 2007-05-13

Smart High-Side Power Switch

BTS716G

Parameter and Conditions

Thermal resistance
junction - soldering point6)7)
junction ambient6)
@ 6 cm2 cooling area

Symbol

each channel: Rthjs

Rthja
one channel active:
all channels active:

Values
min
typ
max

Unit

17
----

K/W

Values
min
typ
max

Unit

-----

--44
35

Electrical Characteristics
Parameter and Conditions, each of the four channels

Symbol

at Tj = -40...+150C, Vbb = 12 V unless otherwise specified

Load Switching Capabilities and Characteristics

On-state resistance (Vbb to OUT); IL = 2 A
each channel,
Tj = 25C: RON
Tj = 150C:
two parallel channels, Tj = 25C:
four parallel channels, Tj = 25C:

-----

110
210
55
28

140
280
70
35

2.3
3.3
4.7

2.6
3.7
5.3

----

--

--

mA

---

100
100

250
270

0.2
0.2

---

1.0
1.1

V/s
V/s

see diagram, page 11

Nominal load current

one channel active: IL(NOM)

two parallel channels active:
four parallel channels active:

Device on PCB6), Ta = 85C, Tj 150C

Output current while GND disconnected or pulled up8); IL(GNDhigh)

Vbb = 32 V, VIN = 0,
see diagram page 9
Turn-on time9)

Turn-off time
RL = 12
Slew rate on 9)
Slew rate off 9)

6)
7)
8)
9)

IN
IN

to 90% VOUT: ton

to 10% VOUT: toff

10 to 30% VOUT, RL = 12 : dV/dton

70 to 40% VOUT, RL = 12 : -dV/dtoff

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
Soldering point: upper side of solder edge of device pin 15. See page 14
not subject to production test, specified by design
See timing diagram on page 12.

Data Sheet

V1.0, 2007-05-13

Smart High-Side Power Switch

BTS716G

Parameter and Conditions, each of the four channels

Symbol

at Tj = -40...+150C, Vbb = 12 V unless otherwise specified

Values
min
typ
max

Unit

Operating Parameters
Operating voltage
Undervoltage switch off10)
Overvoltage protection12)
I bb = 40 mA
Standby current13)
VIN = 0; see diagram page 11

Vbb(on)
Tj =-40...25C: Vbb(u so)
Tj =125C:
Vbb(AZ)

Tj =-40C...25C: Ibb(off)
Tj =150C:
Tj =125C:
Off-State output current (included in Ibb(off))
IL(off)
VIN = 0; each channel
Operating current 14), VIN = 5V,
IGND = IGND1 + IGND2,
one channel on: IGND
all channels on:
Protection Functions15)
Current limit, Vout = 0V, (see timing diagrams, page 12)
Tj =-40C: IL(lim)
Tj =25C:
=+150C:
Tj
Repetitive short circuit current limit,
Tj = Tjt
each channel IL(SCr)
two,three or four parallel channels

5.5
--41

---47

40
4.5
4.511)
52

V
V

-----

9
--1

16
24
1611)
5

---

0.5
1.9

0.9
3.3

mA

--5

-9
--

14
---

---

6.5
6.5

---

--

--

ms

41

47

52

150
--

-10

---

C
K

(see timing diagrams, page 12)

Initial short circuit shutdown time

Vout = 0V

Tj,start =25C: toff(SC)

(see timing diagrams on page 12)

VON(CL)

Output clamp (inductive load switch off)16)

at VON(CL) = Vbb - VOUT, IL= 40 mA

Tjt
Tjt

Thermal overload trip temperature

Thermal hysteresis

10)
11)
12)

13)
14)
15)

16)

is the voltage, where the device doesnt change its switching condition for 15ms after the supply voltage
falling below the lower limit of Vbb(on)
not subject to production test, specified by design
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram on page 9.
Measured with load; for the whole device; all channels off
Add IST, if IST > 0
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)

Data Sheet

V1.0, 2007-05-13

Smart High-Side Power Switch

BTS716G

Parameter and Conditions, each of the four channels

Symbol

at Tj = -40...+150C, Vbb = 12 V unless otherwise specified

Reverse Battery
Reverse battery voltage 17)
Drain-source diode voltage (Vout > Vbb)
IL = - 2.0 A, Tj = +150C

-Vbb
-VON

Values
min
typ
max

Unit

---

-600

32
--

V
mV

Diagnostic Characteristics
Open load detection voltage

V OUT(OL)

1.7

2.8

4.0

Input and Status Feedback18)

Input resistance

RI

2.5

4.0

6.0

VIN(T+)
VIN(T-)
VIN(T)
td(STon)

-1.0
---

--0.2
10

2.5
--20

V
V
V
s

td(STon)

30

--

--

td(SToff)

--

--

500

td(SToff)

--

--

20

IIN(off)
IIN(on)

5
10

-35

20
60

A
A

VST(high)
VST(low)

5.4
--

---

-0.6

(see circuit page 9)

Input turn-on threshold voltage

Input turn-off threshold voltage
Input threshold hysteresis
Status change after positive input slope19)
with open load
Status change after positive input slope19)
with overload
Status change after negative input slope
with open load
Status change after negative input slope19)
with overtemperature
Off state input current
VIN = 0.4 V:
On state input current
VIN = 5 V:
Status output (open drain)
Zener limit voltage
IST = +1.6 mA:
ST low voltage
IST = +1.6 mA:

17)

Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and
circuit page 9).
18) If ground resistors R
GND are used, add the voltage drop across these resistors.
19) not subject to production test, specified by design
Data Sheet
7
V1.0, 2007-05-13

Smart High-Side Power Switch

BTS716G

Truth Table
Channel 1 and 2
Channel 3 and 4
(equivalent to channel 1 and 2)

Chip 1
Chip 2

Normal operation

Open load

Channel 1 (3)
Channel 2 (4)

Overtemperature

both channel

Channel 1 (3)
Channel 2 (4)

L = "Low" Level
H = "High" Level

IN1
IN3

IN2
IN4

OUT1
OUT3

OUT2
OUT4

ST1/2
ST3/4

L
L
H
H
L
H

L
H
L
H
X
X

L
L
H
H
Z
H

L
H
L
H
X
X

H
H
H
H

X
X
L
X
H
L
H
X
X

L
H
L
H
X
X
X
L
H

X
X
L
L
L
L
L
X
X

Z
H
L
L
L
X
X
L
L

L20)
H
L15)
H
H
L
L
H
L
H
L

X = don't care
Z = high impedance, potential depends on external circuit
Status signal valid after the time delay shown in the timing diagrams

Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and
outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4
have to be configured as a 'Wired OR' function with a single pull-up resistor.

Terms

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Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20

External RGND optional; two resistors RGND1, RGND2 = 150 or a single resistor RGND = 75 for reverse
battery protection up to the max. operating voltage.

20)

L, if potential at the Output exceeds the OpenLoad detection voltage

Data Sheet

V1.0, 2007-05-13

Smart High-Side Power Switch

BTS716G

Input circuit (ESD protection), IN1 to IN4

Overvolt. and reverse batt. protection

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conditions is not recommended.

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Status output, ST1/2 or ST3/4

67

Open-load detection, OUT1...4

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VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 ,

RST= 15 k, RI= 3.5 k typ.
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active

9

5 6721

5 /RDG

OFF-state diagnostic condition:

Open Load, if VOUT > 3 V typ.; IN low

ESD-Zener diode: 6.1 V typ., max 0.3 mA; RST(ON) < 375
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.

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Any kind of load. In case of IN = high is VOUT VIN - VIN(T+).

Due to VGND > 0, no VST = low signal available.

Data Sheet

V1.0, 2007-05-13

Smart High-Side Power Switch

BTS716G

GND disconnect with GND pull up



Inductive load switch-off energy

dissipation
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load

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Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND > 0, no VST = low signal available.

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Energy stored in load inductance:

2

EL = 1/2LI L
While demagnetizing load inductance, the energy
dissipated in PROFET is

EAS= Ebb + EL - ER= VON(CL)iL(t) dt,

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2RL bb

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Maximum allowable load inductance for

a single switch off (one channel)4)
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For inductive load currents up to the limits defined by ZL

(max. ratings and diagram on page 10) each switch is
protected against loss of Vbb.

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ZL [mH]


Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current
flows through the GND connection.







IL [A]
Data Sheet

10

V1.0, 2007-05-13

Smart High-Side Power Switch

BTS716G

Typ. on-state resistance

521 I9EE7M; IL = 2 A, IN = high
RON [mOhm]

7M &




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Vbb [V]

Typ. standby current

,EERII I7M; Vbb = 9...34 V, IN1,2,3,4 = low
Ibb(off) [A]




















Tj [C]

Data Sheet

11

V1.0, 2007-05-13

Smart High-Side Power Switch

BTS716G

Timing diagrams
All channels are symmetric and consequently the diagrams are valid for channel 1 to
channel 4
Figure 2b: Switching a lamp:

Figure 1a: Vbb turn on:

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Figure 2a: Switching a resistive load,

turn-on/off time and slew rate definition:

Figure 3a: Turn on into short circuit:

shut down by overtemperature, restart by cooling

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Data Sheet

Heating up of the chip may require several milliseconds, depending

on external conditions

12

V1.0, 2007-05-13

Smart High-Side Power Switch

BTS716G

Figure 5a: Open load: detection in OFF-state, turn

on/off to open load
Open load of channel 1; other channels normal
operation

Figure 3b: Turn on into short circuit:

shut down by overtemperature, restart by cooling
(two parallel switched channels 1 and 2)
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ST1 and ST2 have to be configured as a 'Wired OR' function
ST1/2 with a single pull-up resistor.

Figure 6a: Status change after, turn on/off to

overtemperature
Overtemperature of channel 1; other channels normal
operation

Figure 4a: Overtemperature:

Reset if Tj <Tjt

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67
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Data Sheet

13

V1.0, 2007-05-13

Smart High-Side Power Switch

BTS716G

1.27
0.35

0.35 x 45

7.6 -0.2 1)

0.23 +0.0
9
8 ma
x

2.65 max

2.45 -0.2

0.2 -0.1

Package Outlines

0.4 +0.8

+0.15 2)

0.2 24x
20

0.1

10.3 0.3

11

GPS05094

1 12.8 1) 10
-0.2
Index Marking
1) Does not include plastic or metal protrusions of 0.15 max per side
2) Does not include dambar protrusion of 0.05 max per side

Figure 1

PG-DSO-20 (Plastic Dual Small Outline Package) (RoHS-compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order

You can find all of our packages, sorts of packing and others in our
Infineon Internet Page Products: http://www.infineon.com/products.
Data Sheet

17

Dimensions in mm
V1.0, 2007-05-13

Smart High-Side Power Switch

BTS716G

Revision History
Version
1.0

Data Sheet

Date

Changes

2007-05-13

Creation of the green datasheet.

18

V1.0, 2007-05-13

Edition 2007-05-13
Published by
Infineon Technologies AG
81726 Munich, Germany
Infineon Technologies AG 5/13/07.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (Beschaffenheitsgarantie). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
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