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Outline of Chapter 4
Still to be determined:
- output resistance (ro)
- input resistance
- body terminal
MOSFETs 57
I D
ro
VDS
VDS
I D
OP
From
Channel
Length
Modulation
(CLM)
VDS
MOSFETs 58
Output Resistance ro
To derive an
expression for ro:
Start with full ID
equation
Take derivative and
simplify
Plug in the operating
point
iD
ro
vDS
iD = 12 k n
OP
W
(vGS Vt )2 (1 + vDS )
L
W
iD
2
= 12 k n (vGS Vt )
vDS
L
iD
vDS
=
OP
ID
ID
ID
=
=
ID
1
1 + VDS
+ VDS V A + VDS
ro
1
ID
MOSFETs 59
MOSFETs 60
Source absorption
Theorem
Figure 4.39 Development of the T equivalent-circuit model for the MOSFET. For simplicity, ro has been omitted but can
be added between D and S in the T model of (d).
MOSFETs 61
MOSFETs 62
MOSFETs 64
iD
vBS
OP
Vt = Vt 0 +
iD = 12 k n
2 f + VSB 2 f
W
(vGS vt )2 (1 + vDS )
L
iD
i v
W
1
1
=
2 2 f + VSB
gm = gm
Body transconductance
g mb = g m
=
2
1
2 f + VSB
MOSFETs 66
DC
MOSFETs 68
RL
RL' = RD RL
MOSFETs 69
(V
GS
W
(VGS + vgs Vt )2 (1 + VDS )
L
+ v gs Vt ) = (VGS Vt ) + v gs
2
v gs << 2(VGS Vt )
MOSFETs 70