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EE 413

Homework 02

Fall 2016

Due on Mon. Sep. 12 at the EE Homework Slot outside of 121 EE East before 4:00 p.m.
For Problem 1, download the IRF HEXFET.xlsx file from ANGEL.
For Problem 2, download the IRF IGBT.xlsx file from ANGEL.
For Problem 3, download the datasheets for the IRG4PC30SPbF, IRG4PC30FPbF,
IRG4PC30UPbF, and IRG4PC30WPbF IGBTs from the International Rectifier web site
(www.irf.com).
1.

Each device in a power MOSFET family has a different value of drain-to-source


breakdown voltage VBRDSS, continuous drain current ID, and drain-source on-state
resistance RDS(on) but shares a similar power rating and a similar conduction loss rating.
The power rating of a device is expressed
Prating VBRDSS I D

The conduction loss rating of a device is expressed

Pconduction I D2 RDS ( on )
For all devices in the family, the relationship between VBRDSS and RDS(on) can often be
modeled
a
RDS (on ) bVBRDSS

where a is typically around 2.


a.

b.
c.
2.

Add four columns to the IRF HEXFET.xlsx spreadsheet to calculate the power
rating at TA 25 C , the power rating at TA 70C , the conduction loss at
TA 25 C , and the conduction loss at TA 70C for each of the six devices.
Determine the value of a for the family. Hint: determine the slope of the best line
fit to log(RDS(on)) vs log(VBRDSS).
Compare your result from Part b. (or the typical value of 2) to what one would
expect based on the Slides 8, 9, and 18 of the switch modeling lecture notes.

Each device in an IGBT family has a different value of continuous collector current IC
and switching speed but shares the same voltage rating and power dissipation rating.
a.
Sort the devices listed in IRF IGBT.xlsx worksheet by family.
b.
Describe the relationship between continuous collector current and switching
speed within each family.

3.

Augment the IRF IGBT.xlsx worksheet to compute the maximum switching frequency
f for each device in the IRG4PC30 family, if each device is operated at TJ 150 C
s

( TC 100 C ), VCC 480 V , maximum IC, and a duty cycle of 50%.


4.

The waveforms plotted below show the voltage across and current through a particular
semiconductor device in a switch pole. Note that the minimum value of the voltage
waveform is actually 2.5 V rather than 0 V.
a.
Sketch the corresponding power waveform and indicate the value of its peak.
b.
Calculate the turn-on energy Wturn-on.
c.
Calculate the turn-on energy Wturn-off.
d.
Calculate the switching power loss.
e.
Calculate the conduction power loss.

5.

An International Rectifier IRG4PC30WPbF IGBT is used in an application in which

vS1 (V)
250

2.5 V
iS1 (A)
50

t (s)

pS1 (W)

t (s)

10

20

I C ( on ) 12 A

30

40

50

t (s)

f s 50 kHz , D 0.50 , and


. Estimate the junction temperature and the
case temperature, if R SA 1 C/W , TA 25 C , VCC 480 V , VGE 15 V , and
RG 23 .