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PERSONAL REMARK :
1
VCB
1
BVCBO
At VCB = B VCBO , M
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1
h FE
BVCEO BVC BO n
PERSONAL REMARK :
10
10
1
1
10
10 10 6 10 4 10
I c (A)
VCEO
VCBO
Collector Voltage
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TECHGURU CLASSES for ENGINEERS (Your Dedication + Our Guidance = Sure Success)
Consider the simple BJT inverter circuit with input pulse applied as
shown
RC
VF
Ex.
+ VCC
Vi
PERSONAL REMARK :
V0
RB
Vi
respectively (IES-EC-2012)
VR
IF
V
V
I F F and I R R
RB
RB
(Since VF and VR VBE )
IB
IC(sat) t
(b)
(c)
(d)
IB n
QB
(a)
Q B d QB
n
dt
VCC = 10 V
RC
VC
RB
= 250
VI
IC
IC(sat) t
VC
Vi
10 V
10 V
0V
0V
10 V
0V
t total
t on
ts
td
Therefore, IC = IC sat
or 10 mA
1
t ON n ln I
c(sat)
1 I
F
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t s n l n
I F IR
I c (sat)
IR
I F
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10 V 0.2 9.8V
RC
RC
1 I c (sat )
d n l n
I R
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The rise time and fall time occurs due to the fact that a base
current step is used to saturate the transistor or return it from
saturation to cut-off.
The delay time occurs as the minority carriers takes time to cross
base region and collected at the collector and attain a value equal to
10 % of its maximum.
IC
PERSONAL REMARK :
9.8 V
0.98 K
10 mA
or R C
and IB
ICsat
where, I B
Transistor
'ON'
Transistor
'OFF'
or R B
100%
90%
10 mA
= 40 A
250
VI VBE 10 0.7
RB
RB
9.3 V
232.5 k
40 A
10%
t
ts
td
tf
tr
tON
toff
The storage time interval ts result from the fact that a transistor has
excess minority carriers stored in the base when in saturation. The
excess storage charge has to be removed to turn off the transistor.
The storage time, in general, is several times higher than the rise or
fall time.
For high speed circuits the storage time is reduced by not driving
transistor deep into saturation. Example Schottky transistor.
and
1
1
1
1
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TECHGURU CLASSES for ENGINEERS (Your Dedication + Our Guidance = Sure Success)
PERSONAL REMARK :
C-C
Very high
(about 500
k)
Low (about
50 )
Less than 1
Very high
0 or 360
For
impedance
matching
Note :
OPERATING POINT
For the proper operation of a transistor, in any application, we set a
fixed levels of certain currents and voltages in a transistor. These
value of currents and voltages define the point at which transistor
operates. This point is known as operating point or quiescent point or
simply Q-point. Since the level of the currents and voltage are fixed
LUCKNOW GORAKHPUR
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TECHGURU CLASSES for ENGINEERS (Your Dedication + Our Guidance = Sure Success)
PERSONAL REMARK :
Active region
D
C
E
Saturation
region
IB = 0
Cut-off region
VCE
Figure 1
(in
pu
ts
ign
al)
i
IC (mA)
(output current)
quiescent point (Q) always remain in the active region after applying
the input signal. Here an important question arises that at which
place in the active region we bias the transistor For simple
understanding there are three possibilities i.e., D, C, E to bias a
transistor which will work as an amplifier. The points D, C, E are
shown in the figure 1. From figure 1 it is clear that there are three
possibilities to bias a transistor in active region to work as an amplifier
(namely D, C and E points).
If point D is selected as the operating point, the upper portion of the
positive half will be clipped off as this point lies very near to the
saturation region [see figure 2].
clipping
D
C
E
A
0
(output voltage)
IB = 0
VCE
2 t
clipping
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PERSONAL REMARK :
IC (mA)
(output current)
(in
pu
ts
ign
al)
IB = 0
0
0
VCE
(output voltage)
clipping
clipping
2 t
sig
na
l)
(output current)
(in
pu
t
IC (mA)
no clipping
2 t
E
A
0
(output voltage)
IB = 0
VCE
2 t
no clipping
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TECHGURU CLASSES for ENGINEERS (Your Dedication + Our Guidance = Sure Success)
PERSONAL REMARK :
(b)
(c)
10 k resistor open
(d)
Ex.
+20V
RC
10k
= 45
10 F
R B 100 k
VEE = (9V)
or VCE = VCC = 20 V.
(b)
(c)
(d)
V0
10 F
(a)
C2
Vi
2.
1.2 k
C1
+10V 47k
(GATE-EE-2000)
+5V
5k
and IB =
IE = 9.3 mA
Substitution yield
50
IB +
0.7V
0.7 + IE 1 K 10 = 0 V
1k
9.3
9.3
IB =
mA =
mA = 0.182 mA
( 1)
10V
VEE VBE
RB
IB =
9 V 0.7 V .3 V
=
= 83 A
100 k
100 k
3.
saturation region
(b)
active region
(c)
breakdown region
(d)
or VC= 4.48V
Ans.
VB = IB RB = (83 A) 100 k
or VB = 8.3 V
Ans.
+12V
2.2k
+12V
15k
Vi
cut-of region
Q
2.2k
VB Vi VB 12
+ IB = 0
15
100
100k
12V
Vi
VB
IB
LUCKNOW
or IB = 0.153 mA
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12V
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TECHGURU CLASSES for ENGINEERS (Your Dedication + Our Guidance = Sure Success)
PERSONAL REMARK :
Ex.
4.
I1
10 k
0.7 V
+ 10V
RE
1 k
RB
270 k
RC
I1 =
Ex.
1 0 .7 0 .7
= 1 mA
10 k
9.3
R B (1 ) R E
IB =
or IB =
and
5.6 k
9.3
= 0.025 mA
10 1
4V
The transistor used in the circuit shown below has a of 30 and ICBO
is negligible.
(GATE-EE- 2011)
15 k
2.4 k
10 V
(a) 2 V (b) 2 V
(c) 4 V (d) 4 V
Sol.(b) Given that is very high it
means IC = IE
From the given circuit
IE =
2.2 k
1k
V2
2.7 V
5.
(a) 1 mA
(b) 10 mA
(c) 0. 1 mA (d) 1 A
Sol.(a) From the given circuit
10 IB ( + 1) RE 0.7 IB RB = 0
or
and
10.7 V
1 k
Sol.(d)From the given circuit, we observe that the given BJT is a pnp type
and since Base-Emitter (BE) junciton is forwand biased, it means the
transistor is not operating in cut-off region.
or
10 k
=100
4 10
2.5 mA and
2.4 k
D
VBE = 0.7 V
or V2 = 14 = 2 V
VCE(sat) = 0.2 V
VZ = 5 V
-12 V
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TECHGURU CLASSES for ENGINEERS (Your Dedication + Our Guidance = Sure Success)
PERSONAL REMARK :
Ex.
Vc 2.2I c 237.6
0V
12 VCE(sat)
2.2 K
12 0.2 11.8V
=
= 5.36 mA
2.2 K
2.2 K
10 k
10 V
0 (10)
1 mA and
10 k
(GATE-EC-2006)
The breakdown voltage of a transistor with its base open is BVCEO and
that with emitter open is BVCBO, then:
(GATE-EC- 1995)
(a) BVCEO=BVCBO
(b) BVCEO>BVCBO
(c) BVCEO<BVCBO
(d) BVCEO is not related to BVCBO
1V
15 k
B
=0
0V
10 k
10 V
V = 0 15 103 = 1 V
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TECHGURU CLASSES for ENGINEERS (Your Dedication + Our Guidance = Sure Success)
Sol.(d)
Ex.
what
would
be
VCEsat = 0.2 V.
Sol.(b) Both emitter - base (EB) and collector base junctions (CB) are
forward biased so transistor is in saturation region. C-B junction is
more forward biased than E-B therefore reverse saturation mode.
10 k
V BB
Sol.
(b) the base doping is reduced and the base width is increased
5 + IC RC + VCE(sat) = 0
or IC RC = 5 0.5
or IC =
4.8
= 4.8 mA .... (i)
1k
related as.
(GATE-EC-1992)
IB(min.) I C
IC
4.8
= 48
I
0.1
or
12.
1
Doping Concentration
In a transistor having finite , the forward bias across the base emitter
junction is kept constant and the reverse bias across the collector base
junction is increased. Neglecting the leakage across the collector base
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TECHGURU CLASSES for ENGINEERS (Your Dedication + Our Guidance = Sure Success)
(b)
(d)
PERSONAL REMARK :
Zero
fast turn-on
14. For common emitter configuration which one of the following statements
is correct?
(IES-EE-2005)
(a) large current gain and high input resistance
(b) large voltage gain and low output resistance
(c) small voltage gain and low input resistance
(d) small current gain and high output resistance
Sol.(b) CE configuration has large voltage gain & low output resistance
List-II
1.
B. Emitter follower
2.
3.
Current gain 1
Beta multiplication
D. Darlington pair
4.
Codes:
A
(a) 4
(b)
(c) 4
3
2
1
(d)
2
1
Sol.(a) CE amplifier - Very high power gain
Emitter Follower - Very low output resistance
Common base amplifier - Current gain = 1
Darlington pair - multiplication pair
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TECHGURU CLASSES for ENGINEERS (Your Dedication + Our Guidance = Sure Success)
(IES-EE-2011)
PERSONAL REMARK :
(d)
Sol.(a) OFF time, tOFF = ts +tf where , ts = storage time and tf = fall time
18. If F and R denote the forward and inverted mode current gains of a
BJT, which one of the following is correct?
(IES-EE-2007)
(a) F = R
(b)
F <R
(c)
F R
(d) F >>R
19. The Si transistor as shown in the circuit below has = 50 and negligible
leakage current.If VCC = 18 V, VEE = 4 V, RE = 200, RC= 4 k,
RB= 72 k,what is the value of the quiescent collector current ICQ?
(a)
1.1 mA
(b)
2 mA
(c)
5 mA
(d)
3.6 mA
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TECHGURU CLASSES for ENGINEERS (Your Dedication + Our Guidance = Sure Success)
or IE =
or Ic =
PERSONAL REMARK :
VEE VBE
R
RE+ B
+ 1
4 0.7
= 2.05 mA
0.2 +1.41
I E =2.00 mA
+1
impedance matching
(IES-EE-2002)
VCE
(c) VCE
VCC
2
(b) VCE
VCC
2
VCC
2
(IES-EC-2000)
Sol.(b)
23.
(IES-EC-2012)
Base emitter voltage V BE which decreases with rise in
temperature
(b)
(c)
(d)
Sol.(b)
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TECHGURU CLASSES for ENGINEERS (Your Dedication + Our Guidance = Sure Success)
(a) 5 V
(c) 2.5 V
(IES-EC-1999)
Ex.
3.1V
(b) 3.1 V
PERSONAL REMARK :
VC
(d) zero
E
10 k
+5V
10 k
20 V
VC
We
see
that
the
transistor
is
in
cut-off
region,
+20 V
+5V
2
3.1V
I2
VC
5
20 V
0.7V
0.7V
20 V
So, VC = 3.1 V
25. A transistor is operated as a non-saturated switch to eliminate
(a) Storage-time
(d)
(IES-EC-1998)
Delay time
VB 0 VB 0.7 0.7 20
=0
10 K
10 k
or VB = 9.3 V
Now, Applying KVL in the input
section we get
VB VBE IC R E 20 0
cut-off region.
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10 V
2.13 mA
4.7 K
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