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NDP7050 / NDB7050
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode power field effect 75A, 50V. RDS(ON) = 0.013Ω @ VGS=10V.
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density Critical DC electrical parameters specified at elevated
process is especially tailored to minimize on-state temperature.
resistance, provide superior switching performance, and Rugged internal source-drain diode can eliminate the need
withstand high energy pulses in the avalanche and for an external Zener diode transient suppressor.
commutation modes. These devices are particularly suited
for low voltage applications such as automotive, DC/DC 175°C maximum junction temperature rating.
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and High density cell design for extremely low RDS(ON).
resistance to transients are needed. TO-220 and TO-263 (D2PAK) package for both through
hole and surface mount applications.
_______________________________________________________________________________
NDP7050.SAM Rev. D
Electrical Characteristics (T C = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS
IS Maximum Continuos Drain-Source Diode Forward Current 75 A
ISM Maximum Pulsed Drain-Source Diode Forward Current 225 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 37.5 A (Note 1) 0.9 1.3 V
TJ = 125°C 0.84 1.2
trr Reverse Recovery Time VGS = 0 V, IF = 75 A, dIF/dt = 100 A/µs 80 150 ns
Irr Reverse Recovery Current 2 4.8 10 A
THERMAL CHARACTERISTICS
NDP7050.SAM Rev. D
Typical Electrical Characteristics
120 2 .5
VGS = 2 0 V 1 0 8 .0
7 .0 V GS = 5 .0 V 5.5
I D , DRAIN-SOURCE CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
100
6 .5 6 .0
2
6.5
R DS(on) , NORMALIZED
80
6 .0
60 1 .5 7.0
5 .5
8.0
40
10
5 .0 1
12
20
20
4 .5
4 .0
0 0 .5
0 1 2 3 4 5 0 20 40 60 80 100 120
V DS , DRAIN-SOURCE VOLTAGE (V) I D , DRA IN CURRENT (A)
2 1 .8
I D = 40A VGS = 10V TJ = 125°C
1.8
V GS = 10V
DRAIN-SOURCE ON-RESISTANCE
1 .6
DRAIN-SOURCE ON-RESISTANCE
1.6
R DS(ON), NORMALIZED
R DS(on) , NORMALIZED
1 .4
1.4
1.2 1 .2
1 25°C
1
0.8
0 .8
0.6 -55°C
0.4 0 .6
-5 0 -25 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120
TJ , JUNCTION TEM PERATURE (°C) I D , DRAIN CURRENT (A)
60 1 .2
V DS = 10V VDS = VGS
GATE-SOURCE THRESHOLD VOLTAGE
1 .1
50 ID = 250µA
T = -55°C
I D , DRAIN CURRENT (A)
J 1
V GS(th) , NORMALIZED
40
125°C
25°C 0 .9
30
0 .8
20
0 .7
10 0 .6
0 0 .5
2 3 4 5 6 7 -5 0 -25 0 25 50 75 100 125 150 175
V GS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEM PERATURE (°C)
NDP7050.SAM Rev. D
Typical Electrical Characteristics (continued)
1 .15 100
50
DRAIN-SOURCE BREAKDOWN VOLTAGE
I D = 250µA V GS = 0V
TJ = 1 2 5 ° C
BV DSS , NORMALIZED
1 .05
1 25°C
-5 5 ° C
1
0.1
0 .95
0.01
0 .9
-50 -25 0 25 50 75 100 125 150 175 0.001
0.2 0.4 0.6 0.8 1 1.2 1.4
TJ , JUNCTION TEM PERATURE (°C)
V SD , BODY DIODE FORW A RD VOLTAGE (V)
Figure 7. Breakdown Voltage Variation with Figure 8. Body Diode Forward Voltage
Temperature. Variation with Current and Temperature.
5000 20
Ciss ID = 75A
VGS , GATE-SOURCE VOLTAGE (V)
3000 V DS = 1 2 V
15
2000
CAPACITANCE (pF)
48V
Coss
1000 10 24V
500 f = 1 MHz
5
V GS = 0V
Crss
300
200 0
1 2 5 10 20 30 60 0 25 50 75 100 125 150
V DS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC)
VDD t on t off
t d (o n ) tr t d (off) tf
V IN RL 90% 90%
D V OUT
VOUT
VGS 10% 10%
R GEN DUT
INVERTED
G 90%
V IN 50% 50%
S
10%
PULSE WIDTH
NDP7050.SAM Rev. D
Typical Electrical Characteristics (continued)
60 300
it
100
VDS = 1 0 V Lim µs
TJ = -55°C
, TRANSCONDUCTANCE (SIEMENS)
N)
50 100 R DS(O
1m
s
25°C
20 3 V GS = 20V
SINGLE PULSE
o
10 1 R θJC = 1 C/W
T C = 25°C
FS
g
0 0.3
0 10 20 30 40 50 60 1 2 3 5 10 20 30 50 100
I D , DRA IN CURRENT (A) V DS , DRA IN-SOURCE VOLTAGE (V))
Figure 13. Transconductance Variation with Figure 14. Maximum Safe Operating Area.
Drain Current and Temperature.
D = 0.5
0.5
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.3
0.2 R θJC (t) = r(t) * RθJC
0.2 R θJC = 1.0 °C/W
0 .1
0.1
0 .0 5 P(pk)
0.0 5 t1
0 .0 2
t2
0.0 3
0 .0 1 TJ - T C = P * RθJC (t)
0.0 2
Duty Cycle, D = t 1 /t2
Single Pulse
0.0 1
0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000
t 1 ,TIM E (m s)
NDP7050.SAM Rev. D
TO-220 Tape and Reel Data and Package Dimensions
Standard
Packaging Option S62Z
(no f l ow code )
D/C1: D9842 SPEC REV: B2
Packaging type Rail/Tube BULK QA REV:
Note/Comments
TO-220 Tube
0.123
Configuration: Figure 4.0 +0.001 0.165
-0.003
Note: All dim ensions are in inches 0.080
0.450 0.275
±.030
F 9852 F 9852 F 9852 F 9852 F 9852 F 9852 F 9852 F 9852 F 9852 F 9852 F 9852 F 9852
NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L
1.300
±.015
0.160
0.032
±.003
20.000
+0.031 0.800
-0.065 0.275
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Packaging Description:
TO-263/D2PAK parts are shipped in tape. The carrier tape
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
is made from a dissipative (carbon filled) polycarbonate
TNR D ATE resin. The cover tape is a multilayer film (Heat Activated
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms Adhesive in nature) primarily composed of polyester film,
MAX ___ ___ ___ ___ _ gms
Static Dissipative
Embossed Carrier Tape
Moisture Sensitive
Label
F63TNR
Label
Customized
Label FDB603AL FDB603AL FDB603AL FDB603AL
F9835 F9835 F9835 F9835
Moisture Sensitive
Label
Carrier Tape
Cover Tape
Components
Trailer Tape Leader Tape
400mm minimum or 1520mm minimum or
25 empty pockets 95 empty pockets
K0 W
E2
Wc B0
Tc
A0 P1 D1
Pkg type A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
TO263AB/
10.60 15.80 24.0 1.55 1.60 1.75 22.25 11.50 16.0 4.0 4.90 0.450 21.0 0.06
D2PAK +/-0.10 +/-0.10 +/-0.3 +/-0.05 +/-0.10 +/-0.10 min +/-0.10 +/-0.1 +/-0.1 +/-0.10 +/-0.150 +/-0.3 +/-0.02
(24mm)
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C). 0.9mm
10 deg maximum maximum
Typical
component
cavity 0.9mm
B0 center line maximum
Typical
Sketch A (Side or Front Sectional View) component Sketch C (Top View)
A0 center line
Component Rotation Component lateral movement
Sketch B (Top View)
2PAK
TO-263AB/D Reel Configuration: Component Rotation
Figure 4.0
W1 Measured at Hub
Dim A
Max
B Min
Dim C
Dim A
max Dim N Dim D
min
DETAIL AA
See detail AA
W3
Reel
Tape Size Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
Option
13.00 0.059 512 +0.020/-0.008 0.795 4.00 0.961 +0.078/-0.000 1.197 0.941 – 0.1.079
24mm 13" Dia
330 1.5 13 +0.5/-0.2 20.2 100 24.4 +2/0 30.4 23.9 – 27.4
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. D