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DATA SHEET
book, halfpage
M3D050
BAT85
Schottky barrier diode
Product specification
Supersedes data of 1996 Mar 20
2000 May 25
Philips Semiconductors
Product specification
BAT85
FEATURES
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
k
handbook, halfpage
MAM193
Protection circuits
Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.
Blocking diodes.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
30
IF
200
mA
IF(AV)
200
mA
IFRM
tp 1 s; 0.5
300
mA
IFSM
tp 10 ms
Tstg
storage temperature
65
+150
Tj
junction temperature
125
Tamb
65
+125
2000 May 25
Philips Semiconductors
Product specification
BAT85
ELECTRICAL CHARACTERISTICS
Tamb = 25 C; unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
see Fig.3
IF = 0.1 mA
240
mV
IF = 1 mA
320
mV
IF = 10 mA
400
mV
IF = 30 mA
500
mV
IF = 100 mA
800
mV
IR
reverse current
VR = 25 V; see Fig.4
trr
ns
Cd
diode capacitance
10
pF
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Refer to SOD68 standard mounting conditions.
2000 May 25
VALUE
UNIT
320
K/W
Philips Semiconductors
Product specification
BAT85
GRAPHICAL DATA
MRA540
MLD358
103
handbook, halfpage
250
handbook,
halfpage
I F(AV)
IF
(mA)
(mA)
200
102
150
10
100
(1)
(2) (3)
1
50
50
100
101
150
0.4
0.8
Tamb ( C)
VF (V)
1.2
Fig.3
MGC681
MGC682
5
10halfpage
handbook,
IR
(nA)
12
handbook, halfpage
Cd
(pF)
(1)
10
10 3
(2)
10 2
10
1
(3)
10 1
0
0
10
20
V (V)
R
30
(1) Tamb = 85 C.
(2) Tamb = 25 C.
(3) Tamb = 40 C.
Fig.4
20
VR (V)
30
f = 1 MHz.
Fig.5
2000 May 25
10
Philips Semiconductors
Product specification
BAT85
handbook,
halfpage
I
dI F
dt
10% t
Qr
90%
IR
tf
MRC129 - 1
2000 May 25
Philips Semiconductors
Product specification
BAT85
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
SOD68
(1)
G1
b
max.
D
max.
G1
max.
L
min.
mm
0.55
1.6
3.04
25.4
4 mm
scale
Note
1. The marking band indicates the cathode.
OUTLINE
VERSION
SOD68
2000 May 25
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-06-09
DO-34
Philips Semiconductors
Product specification
BAT85
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
2000 May 25
Internet: http://www.semiconductors.philips.com
SCA 69
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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613514/04/pp8
May 25