BAT86

Vishay Semiconductors
formerly General Semiconductor

Schottky Diode
Features
For general purpose applications.
This diode features low turn-on voltage. This
device is protected by a PN junction guard ring
against excessive voltage, such as electrostatic
discharges.
Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring. The low
forward voltage drop and fast switching make it
ideal for protection of MOS devices, steering,
biasing and coupling diodes for fast switching and
low logic level applications.
This diode is also available in the MiniMELF case
with type designation BAS86.

DO-204AH (DO-35 Glass)

Dimensions in inches
and (millimeters)

Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
D7/10K per 13 reel (52mm tape), 20K/box
D8/10K per Ammo tape (52mm tape), 20K/box

Maximum Ratings & Thermal Characteristics

Parameter
Continuous Reverse Voltage
Forward Continuous Current at Tamb = 25C

Ratings at 25C ambient temperature unless otherwise specified.

Symbol

Value

Unit

VR

50

IF

Repetitive Forward Current at tp < 1s, 0.5, Tamb = 25C

Power Dissipation at Tamb = 25C

IFRM
Ptot
RJA

Thermal Resistance Juntion to Ambient Air

Junction Temperature
Ambient Operating Temperature Range
Storage Temperature Range

(1)

200

mA

500(1)

mA

(1)

mW

(1)

C/W

200
300

Tj

125

Tamb

65 to +125

TS

65 to +150

Electrical Characteristics (T

= 25C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

V(BR)R

IR = 10A (pulsed)

50

IR

VR = 40V

0.3

5.0

Forward Voltage
Pulse Test tp < 300s, < 2%

VF

IF = 0.1mA
IF = 1mA
IF = 10mA
IF = 30mA
IF = 100mA

0.200
0.275
0.365
0.460
0.700

0.300
0.380
0.450
0.600
0.900

Capacitance

Ctot

VR = 1V, f = 1MHz

pF

trr

IF = 10mA to IR = 10mA
to IR = 1mA

ns

Reverse Breakdown Voltage

Leakage Current

Reverse Recovery Time

Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature

Document Number 88147

13-May-02

www.vishay.com
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