PD - 96378

AUTOMOTIVE GRADE

AUIRFZ44N
HEXFET Power MOSFET

Features
l
l
l
l
l
l
l
l
l

Advanced Planar Technology

Low On-Resistance
Dynamic dV/dT Rating
175C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *

V(BR)DSS

55V

RDS(on) max.

17.5m

ID

49A

Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.

S
G

TO-220AB
AUIRFZ44N

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25C, unless otherwise specified.
Parameter
ID @ TC = 25C
ID @ TC = 100C
IDM
PD @TC = 25C
VGS
EAS (Thermally Limited)
EAS (tested)
IAR
EAR
dv/dt
TJ
TSTG

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value

Max.

c

Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw

Units

49
35
160
94
0.63
20
150
530
25
9.4
5.0
-55 to + 175

c
e

A
W
W/C
V
mJ
A
mJ
V/ns
C

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance
RJC
RCS
RJA

Parameter

Typ.

Max.

Units

Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient

0.50

1.5

62

C/W

HEXFET is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

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AUIRFZ44N
Static Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Min.

Typ.

Max.

Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

Parameter

55

V(BR)DSS/TJ

Conditions
VGS = 0V, ID = 250A

Breakdown Voltage Temp. Coefficient

0.058

V/C Reference to 25C, ID = 1mA

RDS(on)
VGS(th)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

17.5

2.0

4.0

m
V

gfs
IDSS

Forward Transconductance

19

VDS = 25V, ID = 25A

Drain-to-Source Leakage Current

25

VDS =55V, VGS = 0V

250

IGSS

Gate-to-Source Forward Leakage

100

nA

VGS = 20V

Gate-to-Source Reverse Leakage

-100

VGS = 10V, ID = 25A

VDS = VGS, ID = 250A

VDS = 44V, VGS = 0V, TJ = 150C

VGS = -20V

Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)

Qg

Total Gate Charge

63

Qgs

Gate-to-Source Charge

14

Qgd

Gate-to-Drain ("Miller") Charge

23

VGS = 10V,See Fig 6 and 13

td(on)

Turn-On Delay Time

12

VDD = 28V

tr

Rise Time

60

td(off)

Turn-Off Delay Time

44

tf

Fall Time

45

LD

Internal Drain Inductance

LS

Internal Source Inductance

Ciss

Input Capacitance

Coss
Crss
EAS

Single Pulse Avalanche Energy

4.5

ID = 25A
nC

VDS = 44V

ID = 25A
ns

RG = 12

f

VGS = 10V, See Fig.10

Between lead,

nH

6mm (0.25in.)
from package

7.5

1470

Output Capacitance

360

pF

VDS = 25V

Reverse Transfer Capacitance

88
530

150

mJ

IAS = 25A, L= 0.47mH

Min.

Typ.

Max.

Units

and center of die contact

VGS = 0V
= 1.0MHz, See Fig.5

Diode Characteristics
Parameter
IS

Continuous Source Current

ISM

(Body Diode)
Pulsed Source Current

VSD

(Body Diode)
Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

c

Conditions
MOSFET symbol

49
A

showing the
integral reverse

160

1.3

p-n junction diode.

TJ = 25C, IS = 25A, VGS = 0V

63

95

170

260

ns
nC

TJ = 25C, IF = 25A
di/dt = 100A/s

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

Starting TJ = 25C, L = 0.48mH

RG = 25, IAS = 25A. (See Figure 12)

ISD 25A, di/dt 230A/s, VDD V(BR)DSS,

TJ 175C

Pulse width 400s; duty cycle 2%.

This is a typical value at device destruction and represents
operation outside rated limits.

This is a calculated value limited to TJ = 175C .

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AUIRFZ44N

Qualification Information
Automotive
(per AEC-Q101)
Qualification Level

Moisture Sensitivity Level

Comments: This part number(s) passed Automotive

qualification. IRs Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
3L-TO-220

N/A

Machine Model

Class M3(+/- 400V )

(per AEC-Q101-002)

Human Body Model

ESD

Class H1C(+/- 1250V )

(per AEC-Q101-001)

Charged Device Model

RoHS Compliant

Class C5(+/- 1250V )

(per AEC-Q101-005)
Yes

Qualification standards can be found at International Rectifiers web site: http//www.irf.com/

Exceptions to AEC-Q101 requirements are noted in the qualification report.

Highest passing voltage

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AUIRFZ44N
1000

1000

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V

I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

100

100

10

4.5V

20s PULSE WIDTH

TJ = 25 C

1
0.1

10

4.5V
10

RDS(on) , Drain-to-Source On Resistance

(Normalized)

I D , Drain-to-Source Current (A)

2.5

TJ = 25 C

100

TJ = 175 C

10

V DS = 25V
20s PULSE WIDTH
6

10

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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10

100

Fig 2. Typical Output Characteristics

1000

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

20s PULSE WIDTH

TJ = 175 C

1
0.1

100

VDS , Drain-to-Source Voltage (V)

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP

TOP

11

ID = 49A

2.0

1.5

1.0

0.5

0.0
-60 -40 -20 0

VGS = 10V
20 40 60 80 100 120 140 160 180

TJ , Junction Temperature ( C)

Fig 4. Normalized On-Resistance

Vs. Temperature

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AUIRFZ44N
2500

VGS , Gate-to-Source Voltage (V)

2000

C, Capacitance (pF)

20

VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd

Ciss

1500

1000

Coss

500

Crss
0

10

ID = 25A
VDS = 44V
VDS = 27V
VDS = 11V

16

12

100

VDS , Drain-to-Source Voltage (V)

10

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

40

50

60

70

1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ID, Drain-to-Source Current (A)

ISD , Reverse Drain Current (A)

30

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

100

100

TJ = 175 C

10

TJ = 25 C

0.1
0.0

20

QG , Total Gate Charge (nC)

V GS = 0 V
0.6

1.2

1.8

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

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2.4

100sec

10

1msec
1

0.1

Tc = 25C
Tj = 175C
Single Pulse
1

10msec

10

100

VDS , Drain-toSource Voltage (V)

Fig 8. Maximum Safe Operating Area

AUIRFZ44N

50

RD

V DS
V GS

ID , Drain Current (A)

40

D.U.T.

RG

-V DD

30

V GS
Pulse Width 1 s
Duty Factor 0.1 %

20

10

Fig 10a. Switching Time Test Circuit

0

25

50

75

100

125

150

175

VDS

TC , Case Temperature ( C)

90%

Fig 9. Maximum Drain Current Vs.

Case Temperature

10%
VGS
td(on)

tr

t d(off)

tf

Fig 10b. Switching Time Waveforms

Thermal Response (Z thJC )

10

D = 0.50
0.20
0.10

0.1

0.01
0.00001

PDM

0.05
0.02
0.01

t1

SINGLE PULSE
(THERMAL RESPONSE)

t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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AUIRFZ44N

15V

VDS

DRIVER

D.U.T

RG

+
- VDD

IAS

20V

0.01

tp

Fig 12a. Unclamped Inductive Test Circuit

EAS , Single Pulse Avalanche Energy (mJ)

300

TOP
240

BOTTOM

ID
10A
18A
25A

180

120

60

0
25

50

75

100

125

150

175

Starting TJ , Junction Temperature ( C)

V(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

tp

Current Regulator
Same Type as D.U.T.

I AS
50K

Fig 12b. Unclamped Inductive Waveforms

.2F

12V

.3F

D.U.T.

+
V
- DS

VGS
3mA

QG

VGS

IG

ID

Current Sampling Resistors

QGS

QGD

Fig 13b. Gate Charge Test Circuit

VG

Charge

Fig 13a. Basic Gate Charge Waveform

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AUIRFZ44N
Peak Diode Recovery dv/dt Test Circuit
+

D.U.T*

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

RG

dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

+
-

V DD

V GS

Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D=

P.W.
Period
V[GS=10V]

***

D.U.T. ISD Waveform

Reverse
Recovery
Current

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

[VDD]

Forward Drop

Inductor Curent
Ripple 5%

[ISD]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For N-channel HEXFET power MOSFETs

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AUIRFZ44N
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

Part Number

AUFZ44N

YWWA

IR Logo

XX

or

Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free

XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRFZ44N

Ordering Information
Base part
AUIRFZ44N

Package Type
TO-220

10
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Standard Pack
Form

Quantity

Complete Part Number

Tube

50

AUIRFZ44N

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AUIRFZ44N
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products
and services at any time and to discontinue any product or services without notice. Part numbers designated with the
AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance
and process change notification. All products are sold subject to IRs terms and conditions of sale supplied at the
time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IRs standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information
with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is an
unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant
into the body, or in other applications intended to support or sustain life, or in any other application in which the failure
of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR
products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages,
and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the
design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense,
are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in
applications requiring military grade products, is solely at the Buyers own risk and that they are solely responsible for
compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific
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designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/

WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105

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