24 - SOLIDS AND SEMI-CONDUCTOR DEVICES

Page 1

(Answers at the end of all questions}

1)

In a common base amplifier, the phase difference between the Input signal voltage and
output voltage is
(a) 11:
(b)
'It:/ 4
(c) ~/2
(d) zero
[ AIEEE 2005 }

2)

In a full wave rectifier, circuit operating from 50 Hz mains frequency,

frequency in the ripple would be
(a) 25 Hz
( b I 50 Hz
( c I 70.7 Hz
( d I 100 Hz

3)

When npn transistor is used as an amplifier

( a ) electrons move from base to collector
( c ) electrons move from collector to base

4)

For a transistor amplifier in common emitter

50 and h.,.,
25 IJA IV ), the current gain i
,
( ht
(a} -5.2
(b) -15.7
(c) -24.8
(d)
48.7.

configura~r.,l~d

'!{J

The
(a)
(c)
(d)

7)

resistance of
~
each of these increases
(b)
h o
se decreases
copper strip increases and that
aniUm decreases
copper strip decreases and
o
nlum increases

The
( a ) Heisenberg's uncertain
( c ) Bohr's correspondenc

{ AIEEE 2004 I

[ AIEEE 2004, 2003 I

lids is due to
( b ) Pauli's exclusion principle
( d ) Boltzmann's law

I AIEEE

2004 I

I AIEEE

2004 I

When p-n junction

(a
(b

I
I

(c) both the

(d) both
8I

impedance of 1 M

temperature to 80 K.

5)

6I

2005}

The

and barrier eight is Increased

widened and barrier height is reduced
nJiriogicn and barrier height are reduced
region and barrier height are Increased

variation of resistance with temperature in a metal and a

rises essentially due to the difference in
bonding
( b 1 crystal structure
g mechanism with temperature ( d } no. of charge carriers with temp.
I AIEEE 2003 I
middle of the depletion layer of a reverse biased p-n junction, the
the potential is zero
( b ) electric field is zero
potential is maximum
( d ) electric field is maximum

10) In a p-n junction, the depletion layer consists of

( a ) electrons ( b ) protons ( c ) mobile ions ( d

1AlE EE

2003 1

1 immobile ions

[ AIEEE 2002 I

11 ) In forward bias, the width of otential barrier in p-n )unction diode

( a 1 increases ( b ) decreases ( c ) remans constant
( d ) first increases, then decreases

[ AIEEE 2002 }

24 - SOLIDS AND SEMI-CONDUCTOR DEVICES

Page 2

(Answers at the end of all questions}

12 1 When a potential difference is applied across, the current passing through,

( a 1 an insulator at 0 K is zero
( b 1 a semiconductor at 0 K Is zero
( c 1 a metal at 0 K is finite
( d 1 a p-n diode at 300 K is finite if it is reverse biased
13 1 A transistor is used in common emitter mode as
( a 1 the base emitter junction is forward biased
( b 1 the base emitter junction is reverse biased
( c 1 the Input signal is connected In series with the
emitter junction
( d } the input signal is connected in series with
connector junction

9991

the base

14 1 In a p-n junction diode not connected to any

(a I

I
(cI

side to the p-type

from the p-type side to the n-type

(b

(d

(liT 1998]
15 1 Which of the

I liT

1997 I

16)
(b

1 ionic solids
[liT 1996]
the

17

output

is

shown

in

the

figure.

The

v
t

(b) A, C

I c I B, 0

( d} A, B, C, 0

[liT 19961

18 1 Read the following statements carefully:

Y : The resistivity of a semiconductor decreases with increase of temperature
Z : In a conducting solid, the rate of collisions between free electrons and ions increases
with increase of temperature
( a 1 Y is true but Z is false
( b 1 Y is false but Z is true
( c 1 Both Y and Z are true
( d 1 Y is true and Z is the correct reason for Y
(liT 1993]

24 - SOLIDS AND SEMI-CONDUCTOR DEVICES

Page 3

(Answers at the end of all questions}

19

1 In an n-p-n transistor circuit, the collector current Is 10 mA. If 90% of the electrons
emitted reach the collector
(a 1 the emitter current wll be 9 mA
( c 1 the base current will be 1 mA

(b) the emitter current will be 11 mA

(d

1 the

base current will be -1 mA

20 } Two
Identical
p-n
junctions
may
be
connected in series
with a battery in
three ways as shown
in the figure. The
Circuit 1
potential
drops
across the two n-p junctions are equal in
( a 1 circuit 1 and circuit 2
( b 1 circuIt 2 and cir
( c 1 circuIt 3 and circuit 1
( d 1 circuit 1 on I

21

(a
(c
(d

{liT 1989)

K. The resistance of

1 Select the correct state

( a 1 A diode can be
( b 1 A triode cannot
( d

from room temperature to

1 each of them increases

(b )
1 copper increases and germanium
1 copper decreases and

22 ) The impurity atoms with

semiconductor are those of
(a 1 phosphorous
( b~n
23

1 A piece of copper and another of

so

1 The linear
witho t dist

~
1

ilicon
(c

decreases

rea
eas s

[liT 1988)
should

antimony

be doped

to make a

( c I aluminium

p-type

[Ill 1988)

r
a

the following:
rectifier.
as a rectifier.

of the I - V characteristic of a triode is used for amplification

[ Ill 1984 )

3
. .~~listtnce of a triode valve is 3 x 10 ohm and its mutual conductance is
volt. The amplification factor of the triode is
6
(b) 4.5
(c) 0.45
( d I 2 X 10

Answers

1111 1983, 1981 1