Advance Technical Data

HiPerFASTTM IGBT

C2-Class High Speed IGBTs

Symbol

Test Conditions

VCES
IC25
VCE(sat)
tfi typ

IXGH 60N60C2
IXGT 60N60C2

Maximum Ratings

VCES

TJ = 25C to 150C

600

VCGR

TJ = 25C to 150C; RGE = 1 M

600

VGES

Continuous

20

VGEM

Transient

30

IC25

TC = 25C (limited by leads)

75

IC110

TC = 110C

60

ICM

TC = 25C, 1 ms

300

SSOA
(RBSOA)

VGE = 15 V, TVJ = 125C, RG = 10

Clamped inductive load @ 600V

PC

TC = 25C

ICM = 100

480

-55 ... +150

TJM

150

Tstg

-55 ... +150

300

TJ

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

TO-247 AD
(IXGH)

C (TAB)
G

Mounting torque (TO-247)

1.13/10Nm/lb.in.

Weight

TO-247 AD
TO-268

6
4

g
g

TO-268
(IXGT)
G

C (TAB)

G = Gate,
E = Emitter,

C = Collector,
TAB = Collector

Features
z
z

Md

= 600 V
= 75 A
= 2.5 V
= 35 ns

z
z

Very high frequency IGBT

Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity

Applications
z

Symbol

Test Conditions

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

= 250 A, VCE = VGE

VGE(th)

IC

ICES

VCE = VCES
VGE = 0 V

IGES

VCE = 0 V, VGE = 20 V

VCE(sat)

IC

= 50 A, VGE = 15 V

2003 IXYS All rights reserved

3.0
TJ = 25C
TJ = 150C

TJ = 25C
TJ = 125C

2.1
1.8

5.0

50
1

A
mA

100

nA

2.5

V
V

z
z

z
z
z

PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers

Advantages
z
z

High power density

Very fast switching speeds for high
frequency applications

DS99043A(09/03)

IXGH 60N60C2
IXGT 60N60C2
Symbol

gfs

Test Conditions

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

IC = 50 A; VCE = 10 V,
Pulse test, t 300 s, duty cycle 2 %

Cies
Coes

VCE = 25 V, VGE = 0 V, f = 1 MHz

40

58

3900

pF

280

pF

97

pF

146

nC

28

nC

50

nC

Cres
Qg
Qge

IC = 50 A, VGE = 15 V, VCE = 0.5 VCES

Qgc
td(on)
tri
td(off)
tfi

18

ns

Inductive load, TJ = 25C

25

ns

IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2

95

Eoff

Eon
td(off)
tfi

Inductive load, TJ = 125C

IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2

Eoff

ns
ns

0.48

0.8 mJ

18

ns

25

ns

0.45

mJ

130

ns

80

ns

1.2

mJ

RthJC
RthCK

150

35

td(on)
tri

TO-247 AD Outline

Dim.

Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
2.2
2.6
A2
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC

Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC

TO-268 Outline

0.26 K/W
(TO-247)

0.25

K/W

Min. Recommended Footprint

(Dimensions in inches and mm)

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343

IXGH 60N60C2
IXGT 60N60C2
Fig. 1. Output Characteristics

Fig. 2. Extended Output Characteristics

@ 25 Deg. C

@ 25 deg. C

100

200
VG E = 15V
13V
11V

90

VG E = 15V
13V
11V

175

70

7V

60
50
40
30

125
100

7V

75
50

20

5V

10

25

5V

0
0.5

1.5

2.5

3.5

1.5

V CE - Volts

Fig. 3. Output Characteristics

2.5

V CE - Volts

100

4.5

1.2
VG E = 15V
13V
11V

80

9V
1.1

70

VC E (sat) - Normalized

90

7V

60
50
40
30

5V

VG E = 15V

I C = 100A

1
0.9
I C = 50A

0.8
0.7

I C = 25A

20
0.6

10
0

0.5
0.5

1.5

2.5

3.5

25

50

75

100

125

150

TJ - Degrees Centigrade

V CE - Volts

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter voltage

Fig. 6. Input Admittance

200
T J = 25 C

4.5

175
150

I C - Amperes

VCE - Volts

3.5

Fig. 4. Temperature Dependence of V CE(sat)

@ 125 Deg. C

I C - Amperes

9V

150

I C - Amperes

I C - Amperes

80

9V

3.5
3
2.5

I C = 100A

100
75
T J = 125 C

50

50A

1.5

125

25 C
-40 C

25

25A

0
5

10

11

V GE - Volts
2003 IXYS All rights reserved

12

13

14

15

3.5

4.5

5.5

6.5

V GE - Volts

7.5

8.5

IXGH 60N60C2
IXGT 60N60C2
Fig. 7. Transconductance

Fig. 8. Dependence of Eoff on RG

100

6
TJ = 125 C
VGE = 15V
VCE = 400V

90
T J = -40 C
25 C

70

E off - milliJoules

g f s - Siemens

80

125 C

60
50
40
30
20

I C = 100A

4
I C = 75A
3
I C = 50A

I C = 25A

10

0
0

25

50

75

100

125

150

175

200

E off - milliJoules

E off - MilliJoules

14

R G = 2 Ohms
R G= 10 Ohms - - - - -

T J = 125 C

2
T J = 25 C

I C = 50A

0
60

70

80

90

I C = 75A

50

I C = 100A

40

16

VG E = 15V
VC E = 400V

100

I C = 25A
25

50

I C - Amperes

75

100

125

TJ - Degrees Centigrade

Fig. 11. Gate Charge

Fig. 12. Capacitance

15

10000
VC E = 300V
I C = 50A
I G = 10mA

Capacitance - pF

VG E - Volts

12

12

10

Fig. 10. Dependence of Eoff on Temperature

VG E = 15V
VC E = 400V

30

Fig. 9. Dependence of Eoff on IC

R G = 2 Ohms
R G = 10 Ohms - - - - -

20

R G - Ohms

I C - Amperes

f = 1M Hz
C ies

1000
C oes
100
C res

10
0

20

40

60

80

100

120

140

160

10

15

20

25

30

35

40

V CE - Volts

Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343

IXGH 60N60C2
IXGT 60N60C2

F ig . 13. M aximu m Tran sien t Th ermal R esistan ce

0 .3

R (th) J C - (C/W)

0 .25

0 .2

0 .15

0.1

0 .05
1

10

10 0

Puls e W idth - millis ec onds

2003 IXYS All rights reserved

10 0 0