Académique Documents
Professionnel Documents
Culture Documents
Electronics Corp.
AP73T03GH/J-HF-3
RoHS-compliant, halogen-free
BV DSS
30V
RDS(ON)
9m
ID
55A
Description
G
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
TO-252 (H)
TO-251 (J)
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID at TC=25C
ID at TC=100C
Rating
Units
30
20
55
39
160
IDM
PD at TC=25C
50
0.36
W/C
TSTG
-55 to 175
TJ
-55 to 175
Thermal Data
Parameter
Symbol
Value
Unit
Rthj-c
3.0
C/W
Rthj-a
62.5
C/W
Rthj-a
110
C/W
Ordering Information
AP73T03GH-HF-3TR
AP73T03GJ-HF-3TB
201003162-3 1/6
Advanced Power
Electronics Corp.
AP73T03GH/J-HF-3
Parameter
BVDSS
RDS(ON)
Test Conditions
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
VGS=10V, ID=30A
VGS=4.5V, ID=20A
16
m
V
VGS(th)
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=30A
42
IDSS
VDS=30V, VGS=0V
10
uA
IGSS
Gate-Source Leakage
VGS=20V, VDS=0V
100
nA
ID=30A
13
21
nC
Qg
Qgs
Gate-Source Charge
VDS=24V
2.5
nC
Qgd
VGS=4.5V
9.5
nC
td(on)
VDS=15V
ns
tr
Rise Time
ID=30A
85
ns
td(off)
RG=3.3 ,VGS=10V
20.5
ns
tf
Fall Time
RD=0.5
10
ns
Ciss
Input Capacitance
VGS=0V
700
1120
pF
Coss
Output Capacitance
VDS=25V
215
pF
Crss
f=1.0MHz
155
pF
Rg
Gate Resistance
f=1.0MHz
1.9
Min.
Typ.
IS=30A, VGS=0V
1.2
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
IS=10A, VGS=0V,
23
ns
Qrr
dI/dt=100A/s
14
nC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse test - pulse width < 300s , duty cycle < 2%
2
2/6
Advanced Power
Electronics Corp.
AP73T03GH/J-HF-3
100
10V
7.0V
6.0V
T C =175 C
10V
7.0V
6.0V
5.0V
80
T C =25 o C
120
5.0V
80
V G = 4.0V
60
V G =4.0V
40
40
20
0
0
10
12
0.0
2.0
6.0
8.0
12
2.0
I D =20A
I D =30A
V G =10V
o
T C =25 C
Normalized RDS(ON)
11
RDS(ON) (m )
4.0
10
1.6
1.2
8
0.8
0.4
6
2
-50
10
100
150
200
T j , Junction Temperature ( C)
30
IS(A)
50
20
T j =175 o C
T j =25 o C
10
1.2
0.8
0.4
0.0
0.2
0.4
0.6
0.8
1.2
1.4
-50
50
100
150
200
T j , Junction Temperature ( o C)
3/6
Advanced Power
Electronics Corp.
AP73T03GH/J-HF-3
1000
I D =30A
8
800
V DS =15V
V DS =18V
V DS =24V
C iss
C (pF)
10
600
400
200
C oss
C rss
0
0
12
16
20
24
21
25
29
ID (A)
17
1000
100
13
100us
10
1ms
T C =25 o C
Single Pulse
10ms
100ms
DC
0.2
0.1
0.1
0.05
PDM
t
0.02
0.01
0.01
1
0.1
10
100
0.00001
0.0001
VDS
90%
0.001
0.01
0.1
10
VG
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Charge
4/6
Advanced Power
Electronics Corp.
AP73T03GH/J-HF-3
E2
E3
B1
F1
Millimeters
SYMBOLS
E1
MIN
NOM
MAX
A2
1.80
2.30
2.80
A3
0.40
0.50
0.60
B1
0.40
0.70
1.00
6.00
6.50
7.00
D1
4.80
5.35
5.90
E3
3.50
4.00
4.50
2.20
2.63
3.05
F1
0.50
0.85
1.20
E1
5.10
5.70
6.30
E2
0.50
1.10
1.80
--
2.30
--
0.35
0.50
0.65
R : 0.127~0.381
A2
A3
(0.1mm
73T03GH
YWWSSS
Package code
GH = RoHS-compliant halogen-free TO-252
Date/lot code (YWWSSS)
Y: Last digit of the year
WW: Work week
SSS: Lot code sequence
5/6
Advanced Power
Electronics Corp.
AP73T03GH/J-HF-3
Millimeters
SYMBOLS
c1
D1
E2
E1
A1
B2
F
B1
MIN
NOM
MAX
2.20
2.30
2.40
A1
0.90
1.20
1.50
B1
0.40
0.60
0.80
B2
0.60
0.85
1.05
c
c1
0.40
0.50
0.60
0.40
0.50
0.60
6.40
6.60
6.80
D1
4.80
5.20
5.50
6.70
7.00
7.30
E1
5.40
5.60
5.80
E2
1.30
1.50
1.70
----
2.30
----
7.00
8.30
9.60
Product: AP73T03
73T03GJ
YWWSSS
Package Code
GJ = RoHS-compliant halogen-free TO-251
Date Code (YWWSSS)
Y : Last digit of the year
WW : Work week
SSS : Lot code sequence
6/6