PD - 95644A

IRGB6B60KPbF
IRGS6B60KPbF
IRGSL6B60KPbF

INSULATED GATE BIPOLAR TRANSISTOR

VCES = 600V

Features
Low VCE (on) Non Punch Through IGBT Technology.
10s Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Lead-Free.

IC = 7.0A, TC=100C
G

tsc > 10s, TJ=150C

E

n-channel

Benefits

VCE(on) typ. = 1.8V

Benchmark Efficiency for Motor Control.

Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.

TO-220AB
IRGB6B60K

D2Pak
IRGS6B60K

TO-262
IRGSL6B60K

Absolute Maximum Ratings

Parameter
VCES
IC @ TC = 25C
IC @ TC = 100C
ICM
ILM
VGE
PD @ TC = 25C
PD @ TC = 100C
TJ
TSTG

Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.

Max.

Units

600
13
7.0
26
26
20
90
36
-55 to +150

V
A

V
W

C
300 (0.063 in. (1.6mm) from case)

Thermal Resistance
Parameter
RJC
RCS
RJA
RJA
Wt

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Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight

Min.

Typ.

Max.

0.50

1.44

1.4

62
40

Units
C/W

1
11/18/04

IRGB/S/SL6B60KPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ

VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES

Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage 600
Temperature Coeff. of Breakdown Voltage 0.3
Collector-to-Emitter Saturation Voltage
1.5 1.80
2.20
Gate Threshold Voltage
3.5 4.5
Temperature Coeff. of Threshold Voltage -10
Forward Transconductance
3.0
Zero Gate Voltage Collector Current
1.0
200
Gate-to-Emitter Leakage Current

Max. Units
Conditions

V
VGE = 0V, IC = 500A
V/C VGE = 0V, IC = 1.0mA, (25C-150C)
2.20
V
IC = 5.0A, VGE = 15V
2.50
IC = 5.0A,VGE = 15V,
TJ = 150C
5.5
V
VCE = VGE, IC = 250A
mV/C VCE = VGE, IC = 1.0mA, (25C-150C)

S
VCE = 50V, IC = 5.0A, PW=80s
150
A
VGE = 0V, VCE = 600V
500
VGE = 0V, VCE = 600V, TJ = 150C
100 nA
VGE = 20V

Ref.Fig.

5, 6,7
8,9,10
8,9,10
11

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Cies
Coes
Cres

Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

RBSOA

Reverse Bias Safe Operting Area

SCSOA

Short Circuit Safe Operting Area

Min.

Typ.
18.2
1.9
9.2
110
135
245
25
17
215
13.2
150
190
340
28
17
240
18
290
34
10

Max. Units
Conditions

IC = 5.0A

nC
VCC = 400V

VGE = 15V
210
J
IC = 5.0A, VCC = 400V
245
VGE = 15V,R G = 100, L =1.4mH
455
Ls = 150nH
TJ = 25C
34
IC = 5.0A, VCC = 400V
26
VGE = 15V, RG = 100 L =1.4mH
230
ns
Ls = 150nH, TJ = 25C
22
260
IC = 5.0A, VCC = 400V
300
J
VGE = 15V,R G = 100, L =1.4mH
560
Ls = 150nH
TJ = 150C
37
IC = 5.0A, VCC = 400V
26
VGE = 15V, RG = 100 L =1.4mH
255
ns
Ls = 150nH, TJ = 150C
27

VGE = 0V

pF
VCC = 30V

f = 1.0MHz
TJ = 150C, IC = 26A, Vp =600V
FULL SQUARE
VCC = 500V, VGE =+15V to 0V,RG = 100
s
TJ = 150C, Vp =600V, RG = 100
10
VCC = 360V, VGE = +15V to 0V

Note to are on page 13

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Ref.Fig.

17
CT1
CT4

CT4

CT4
12,14
WF1WF2

13, 15
CT4
WF1
WF2
16
4
CT2
CT3
WF3

IRGB/S/SL60B60KPbF
15

100
90
80
70

IC (A)

Ptot (W)

10

60
50
40
30
20
10

0
0

20

40

60

80

100 120 140 160

T C (C)

20

40

60

80

100 120 140 160

T C (C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

Fig. 2 - Power Dissipation vs. Case

Temperature

100

100

10

10

IC A)

IC (A)

10 s

100 s
DC
1ms
0.1

10

100

1000

VCE (V)

Fig. 3 - Forward SOA

TC = 25C; TJ 150C

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10000

10

100

1000

VCE (V)

Fig. 4 - Reverse Bias SOA

TJ = 150C; VGE =15V

IRGB/S/SL6B60KPbF
20

20

18

VGE
VGE
VGE
VGE
VGE

16

12

18

VGE
VGE
VGE
VGE
VGE

16
14
ICE (A)

ICE (A)

14

= 18V
= 15V
= 12V
= 10V
= 8.0V

10
8

12
10
8

= 18V
= 15V
= 12V
= 10V
= 8.0V

0
0

VCE (V)

VCE (V)

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25C; tp = 80s

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40C; tp = 80s

20
18

VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

16

ICE (A)

14
12
10
8
6
4
2
0
0

VCE (V)

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 150C; tp = 80s

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20

20

18

18

16

16

14

14

12

ICE = 3.0A

10

ICE = 5.0A

ICE = 10A

VCE (V)

VCE (V)

IRGB/S/SL60B60KPbF

12

ICE = 3.0A

10

ICE = 5.0A

ICE = 10A

0
5

10

15

20

10

VGE (V)

15

20

VGE (V)

Fig. 9 - Typical VCE vs. VGE

TJ = 25C

Fig. 8 - Typical VCE vs. VGE

TJ = -40C

20

40

18

35

16

T J = 25C
T J = 150C

30

12
10

ICE = 3.0A
ICE = 5.0A

ICE = 10A

25
ICE (A)

VCE (V)

14

20
15

10

T J = 150C

2
0
5

10

15
VGE (V)

Fig. 10 - Typical VCE vs. VGE

TJ = 150C

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20

T J = 25C

0
0

10

15

20

VGE (V)

Fig. 11 - Typ. Transfer Characteristics

VCE = 50V; tp = 10s

IRGB/S/SL6B60KPbF
700

1000

600

tdOFF
EON

Swiching Time (ns)

Energy (J)

500
400

EOFF

300
200

100

tF
tdON
tR

10

100
0
0

10

15

20

IC (A)

15

20

IC (A)

Fig. 12 - Typ. Energy Loss vs. IC

TJ = 150C; L=1.4mH; VCE= 400V
RG= 100; VGE= 15V

Fig. 13 - Typ. Switching Time vs. IC

TJ = 150C; L=1.4mH; VCE= 400V
RG= 100; VGE= 15V

250

1000

tdOFF

Swiching Time (ns)

EOFF

200

Energy (J)

10

150

EON
100

100

tdON
tR
tF

10

50

0
0

50

100

150

R G ()

Fig. 14 - Typ. Energy Loss vs. RG

TJ = 150C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V

200

50

100

150

200

RG ()

Fig. 15 - Typ. Switching Time vs. RG

TJ = 150C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V

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IRGB/S/SL60B60KPbF
16

1000

14

Cies

300V

100

400V

10
VGE (V)

Capacitance (pF)

12

Coes

Cres

8
6

10

4
2
0
1

0
1

10

100

10

15

20

Q G , Total Gate Charge (nC)

VCE (V)

Fig. 17 - Typical Gate Charge vs. VGE

ICE = 5.0A; L = 600H

Fig. 16- Typ. Capacitance vs. VCE

VGE= 0V; f = 1MHz

Thermal Response ( Z thJC )

10

D = 0.50
0.20
0.10
0.05

0.1

0.01
0.02
0.01

R1
R1
J
1

R2
R2
2

Ci= i/Ri
Ci= i/Ri

SINGLE PULSE
( THERMAL RESPONSE )

R3
R3
3

Ri (C/W) i (sec)
0.708
0.00022
0.447

0.00089

0.219

0.01037

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

0.001
1E-6

1E-5

1E-4

1E-3

1E-2

1E-1

t1 , Rectangular Pulse Duration (sec)

Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

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IRGB/S/SL6B60KPbF
L

L
VCC

DUT

80 V

+
-

DUT
480V

Rg

1K

Fig.C.T.2 - RBSOA Circuit

Fig.C.T.1 - Gate Charge Circuit (turn-off)

diode clamp /
DUT

Driver

- 5V

360V

DC

DUT /
DRIVER

DUT

VCC

Rg

Fig.C.T.3 - S.C.SOA Circuit

Fig.C.T.4 - Switching Loss Circuit

R=

DUT

VCC
ICM

VCC

Rg

Fig.C.T.5 - Resistive Load Circuit

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IRGB/S/SL60B60KPbF
450

400

350

7
90% ICE

25

400

20

6
300

TEST CURRENT

V CE (V)

tf

200
150

15

5
I CE (A)

V CE (V)

250

5% V CE

100

200

100

2
5% ICE

50

90% test current

10% test current

tr

5% V CE

-50
-0.20

10

ICE (A)

300

500

0
Eon Loss

Eoff Loss

-1

0.30

-100
16.00

0.80

16.10

time(s)

16.20

16.30

-5
16.40

time (s)

Fig. WF1- Typ. Turn-off Loss Waveform

@ TJ = 150C using Fig. CT.4

Fig. WF2- Typ. Turn-on Loss Waveform

@ TJ = 150C using Fig. CT.4

500

50

400

40
VCE
ICE

30
ICE (A)

VCE (V)

300

200

20

100

10

0
-5.00

0.00

5.00

10.00

0
15.00

time (S)

Fig. WF3- Typ. S.C Waveform

@ TC = 150C using Fig. CT.3

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IRGB/S/SL6B60KPbF
TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

E XAMPL E : T HIS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"

Note: "P" in assembly line

position indicates "Lead-Free"

INT E R NAT IONAL

R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE

10

PAR T NU MB E R

DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C

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IRGB/S/SL60B60KPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)

D2Pak Part Marking Information

T H IS IS AN IR F 530S WIT H
L OT CODE 8024
AS S E MB L E D ON WW 02, 2000
IN T H E AS S E MB LY L INE "L"

INT E RNAT IONAL

RE CT IF IE R
LOGO

Note: "P" in as s embly line

pos ition indicates "Lead-F ree"

P AR T NUMB E R
F 530S

AS S E MB L Y
L OT CODE

DAT E CODE
YE AR 0 = 2000
WE E K 02
L INE L

OR
INT E R NAT IONAL
R E CT IF IE R
LOGO
AS S E MBLY
LOT CODE

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PAR T NU MB ER
F 530S
DAT E CODE
P = DE S IGNAT E S LE AD-F R E E
PR ODU CT (OPT IONAL)
YE AR 0 = 2000
WE E K 02
A = AS S E MBL Y S IT E CODE

11

IRGB/S/SL6B60KPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

E XAMP L E :

T H IS IS AN IR L 3103L
L OT COD E 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L IN E "C"
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"

IN T E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT COD E

PAR T NU MB E R

DAT E COD E
YE AR 7 = 1997
WE E K 19
L INE C

OR
IN T E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT COD E

12

P AR T NU MB E R

DAT E CODE
P = DE S IGN AT E S L E AD -F R E E
P R ODU CT (OPT IONAL )
YE AR 7 = 1997
WE E K 19
A = AS S E MB L Y S IT E CODE

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IRGB/S/SL60B60KPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)

FEED DIRECTION 1.85 (.073)

1.60 (.063)
1.50 (.059)

11.60 (.457)
11.40 (.449)

1.65 (.065)

0.368 (.0145)
0.342 (.0135)

24.30 (.957)
23.90 (.941)

15.42 (.609)
15.22 (.601)

TRL
10.90 (.429)
10.70 (.421)

1.75 (.069)
1.25 (.049)

4.72 (.136)
4.52 (.178)

16.10 (.634)
15.90 (.626)

FEED DIRECTION

13.50 (.532)
12.80 (.504)

27.40 (1.079)
23.90 (.941)
4

330.00
(14.173)
MAX.

60.00 (2.362)
MIN.

NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)
24.40 (.961)
3

30.40 (1.197)
MAX.
4

Notes:
VCC= 80% (VCES), VGE =15V, L = 28H, RG = 22
This is only applied to TO-220AB package
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.

Energy losses include "tail" and diode reverse recovery, using Diode HF03D060ACE.
TO-220 package is not recommended for Surface Mount Application
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/04

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13

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/