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Device V(BR)DSS
Q1
30V
Q2
-30V
Features
RDS(ON) max
Package
ID max
TA = +25C
TSOT26
3.8A
TSOT26
3.6A
TSOT26
-2.5A
TSOT26
-2.1A
Complementary MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
Mechanical Data
Applications
Case: TSOT26
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.008 grams (approximate)
Backlighting
Power Management Functions
DC-DC Converters
D1
TSOT26
D2
Q1
G1
D1
S2
S1
G2
D2
Top View
Q2
G1
G2
S1
N-Channel
Top View
S2
P-Channel
Device Schematic
Case
TSOT26
Packaging
3K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporateds definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
66G
2011
Y
Jan
1
2012
Z
Feb
2
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
Mar
3
YM
ADVANCE INFORMTION
Product Summary
2013
A
Apr
4
May
5
2014
B
Jun
6
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2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
Dec
D
August 2013
Diodes Incorporated
DMG6601LVT
Maximum Ratings - Q1 and Q2 (@TA = +25C, unless otherwise specified.)
ADVANCE INFORMTION
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t<10s
TA = +25C
TA = +70C
TA = +25C
TA = +70C
ID
ID
IS
IDM
Q1
30
12
3.8
3.0
Q2
-30
12
-2.5
-2
4.5
3.4
1.5
20
-3
-2.3
-1.5
-15
Units
V
V
A
A
A
A
Symbol
TA = +25C
TA = +70C
Steady state
t<10s
TA = +25C
TA = +70C
Steady state
t<10s
Value
0.85
0.54
147
103
1.3
0.83
96
67
36
-55 to +150
PD
RJA
PD
RJA
RJC
TJ, TSTG
Units
W
C/W
W
C/W
C
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
-
1
100
V
A
nA
VGS(th)
RDS (ON)
|Yfs|
VSD
1
34
38
49
6
0.75
1.5
55
65
85
1.0
0.5
-
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
422
41
39
1.26
5.4
12.3
0.8
1.2
1.6
7.4
31.2
15.6
m
S
V
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
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Diodes Incorporated
DMG6601LVT
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TJ = +25C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-30
-
-1
100
V
A
nA
VGS(th)
RDS (ON)
|Yfs|
VSD
-0.8
70
81
105
5.3
-0.8
-1.2
110
142
190
-1.0
-0.4
-
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
541
46
43
16.9
6.5
13.8
1.0
1.6
1.7
4.6
18.3
2.2
m
S
V
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
N Channel - Q1
VGS = 5.0V
16
VGS = 4.5V
20
VGS = 4.0V
VGS = 10V
VDS = 5.0V
VGS = 3.5V
VGS = 3.0V
VGS = 2.5V
20
ADVANCE INFORMTION
12
8
VGS = 2.0V
15
10
TA = 150C
TA = 125C
0.5
1.0
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
2.0
3 of 9
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T A = 85C
T A = 25C
TA = -55C
1
2
3
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
August 2013
Diodes Incorporated
0.08
0.07
0.06
VGS = 2.5V
0.05
VGS = 4.5V
0.04
VGS = 10V
0.03
0.02
0.01
0
5
10
15
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.08
0.07
0.06
0.05
0.04
ID = 2A
0.03
0.02
0.01
0
20
4
5
6
7
8
9
10
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
1.8
0.10
0.09
0.08
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
VGS = 4.5V
TA = 150C
0.07
TA = 125C
0.06
TA = 85C
0.05
0.04
TA = 25C
0.03
TA = -55C
0.02
VGS = 10V
ID = 10A
1.6
1.4
VGS = 4.5V
ID = 5A
1.2
1.0
0.8
0.01
0
6
8 10 12 14 16 18
ID, DRAIN CURRENT (A)
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature
0.6
-50
20
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
0.10
1.6
0.09
ADVANCE INFORMTION
DMG6601LVT
0.08
0.07
0.06
VGS = 4.5V
ID = 5A
0.05
0.04
VGS = 10V
ID = 10A
0.03
0.02
0.01
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 7 On-Resistance Variation with Temperature
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
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1.4
1.2
ID = 1mA
1.0
0.8
ID = 250A
0.6
0.4
0.2
0
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
August 2013
Diodes Incorporated
DMG6601LVT
1,000
20
18
IS, SOURCE CURRENT (A)
14
12
10
TA = 150C
TA = 125C
6
TA = 85C
T A = 25C
2
0
Ciss
100
Coss
Crss
f = 1MHz
TA = -55C
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
10
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
30
10
VGS GATE THRESHOLD VOLTAGE (V)
8
VDS = 15V
ID = 3.1A
4
6
8
10
12
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate Charge
1
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMTION
16
14
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 12 Transient Thermal Resistance
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10
100
1,000
August 2013
Diodes Incorporated
DMG6601LVT
P Channel - Q2
10
10
VGS = -10V
VGS = -3.5V
VDS = -5.0V
VGS = -4.0V
VGS = -4.5V
VGS = -3.0V
VGS = -2.5V
VGS = -2.0V
TA = 150C
T A = 125 C
0.5
1.0
1.5
-VDS, DRAIN -SOURCE VOLTAGE (V)
Fig. 13 Typical Output Characteristics
0.20
0.18
0.16
0.14
0.12
VGS = -2.5V
0.10
VGS = -4.5V
0.08
VGS = -10V
0.06
0.04
0.02
0
2
4
6
8
-ID, DRAIN SOURCE CURRENT (A)
Fig. 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
2.0
TA = 85C
TA = 25C
T A = -55C
1
2
3
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 14 Typical Transfer Characteristics
0.16
0.12
0.08
ID = -2A
0.04
10
4
5
6
7
8
9
10
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 16 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
1.8
0.20
VGS = -4.5V
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0
0
ADVANCE INFORMTION
VGS = -5.0V
0.16
TA = 150C
0.12
TA = 125C
TA = 85C
TA = 25C
0.08
T A = -55C
0.04
2
4
6
8
-ID, DRAIN SOURCE CURRENT (A)
Fig. 17 Typical On-Resistance vs.
Drain Current and Temperature
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
10
6 of 9
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VGS = -10V
ID = -10A
1.6
1.4
VGS = -4.5V
ID = -5A
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 18 On-Resistance Variation with Temperature
August 2013
Diodes Incorporated
1.6
0.16
VGS = -4.5V
ID = -5A
0.12
VGS = -10V
ID = -10A
0.08
0.04
0
-50
1.2
1.0
-ID = 1mA
0.8
-I D = 250A
0.6
0.4
0.2
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (C)
Fig. 20 Gate Threshold Variation vs. Ambient Temperature
1,000
CT, JUNCTION CAPACITANCE (pF)
10
1.4
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 19 On-Resistance Variation with Temperature
4
T A= 150 C
TA= 125C
T A= 85 C
f = 1MHz
Ciss
100
Coss
Crss
TA= 25C
T A= -55C
0.3
0.6
0.9
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 21 Diode Forward Voltage vs. Current
1.5
10
5
10
15
20
25
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 22 Typical Junction Capacitance
30
10
-VGS, GATE-SOURCE VOLTAGE (V)
ADVANCE INFORMTION
DMG6601LVT
VDS = -15V
ID = -2.3A
4
6
8
10
12
Qg, TOTAL GATE CHARGE (nC)
Fig. 23 Gate-Charge Characteristics
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
14
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Diodes Incorporated
DMG6601LVT
ADVANCE INFORMTION
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 24 Transient Thermal Resistance
10
100
1,000
TSOT26
Dim Min Max Typ
A
1.00
A1
0.01 0.10
A2
0.84 0.90
D
2.90
E
2.80
E1
1.60
b
0.30 0.45
c
0.12 0.20
e
0.95
e1
1.90
L
0.30 0.50
L2
0.25
0
8
4
1
4
12
All Dimensions in mm
e1
E1
L2
c
4x1
6x b
A
A2
A1
Dimensions
C
X
Y
Y1
Y1
Value
(in mm)
0.950
0.700
1.000
3.199
Y (6x)
X (6x)
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
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DMG6601LVT
IMPORTANT NOTICE
ADVANCE INFORMTION
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright 2012, Diodes Incorporated
www.diodes.com
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
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August 2013
Diodes Incorporated