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DMG6601LVT

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Device V(BR)DSS
Q1

30V

Q2

-30V

Features

RDS(ON) max

Package

ID max
TA = +25C

55m @ VGS = 10V

TSOT26

3.8A

65m @ VGS = 4.5V

TSOT26

3.6A

110m @ VGS = -10V

TSOT26

-2.5A

142m @ VGS = -4.5V

TSOT26

-2.1A

Complementary MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability

Description

Mechanical Data

This MOSFET has been designed to minimize the on-state resistance


(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.

Applications

Case: TSOT26
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.008 grams (approximate)

Backlighting
Power Management Functions
DC-DC Converters

D1

TSOT26

D2

Q1

G1

D1

S2

S1

G2

D2

Top View

Q2

G1

G2

S1
N-Channel

Top View

S2
P-Channel

Device Schematic

Ordering Information (Note 4)


Part Number
DMG6601LVT-7
Notes:

Case
TSOT26

Packaging
3K/Tape & Reel

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporateds definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

66G

Date Code Key


Year
Code
Month
Code

2011
Y
Jan
1

2012
Z
Feb
2

DMG6601LVT
Document number: DS35405 Rev. 4 - 2

Mar
3

66G = Product Type Marking Code


YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)

YM

ADVANCE INFORMTION

Product Summary

2013
A
Apr
4

May
5

2014
B
Jun
6

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2015
C
Jul
7

Aug
8

2016
D
Sep
9

Oct
O

2017
E
Nov
N

Dec
D
August 2013

Diodes Incorporated

DMG6601LVT
Maximum Ratings - Q1 and Q2 (@TA = +25C, unless otherwise specified.)

ADVANCE INFORMTION

Characteristic

Symbol
VDSS
VGSS

Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V

Steady
State
t<10s

TA = +25C
TA = +70C
TA = +25C
TA = +70C

ID
ID

Maximum Body Diode Forward Current (Note 6)


Pulsed Drain Current (Note 6)

IS
IDM

Q1
30
12
3.8
3.0

Q2
-30
12
-2.5
-2

4.5
3.4
1.5
20

-3
-2.3
-1.5
-15

Units
V
V
A
A
A
A

Thermal Characteristics (@TA = +25C, unless otherwise specified.)


Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)

Symbol
TA = +25C
TA = +70C
Steady state
t<10s
TA = +25C
TA = +70C
Steady state
t<10s

Value
0.85
0.54
147
103
1.3
0.83
96
67
36
-55 to +150

PD
RJA
PD
RJA

Thermal Resistance, Junction to Case (Note 6)


Operating and Storage Temperature Range

RJC
TJ, TSTG

Units
W
C/W
W
C/W
C

Electrical Characteristics - Q1 (@TA = +25C, unless otherwise specified.)


Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TJ = +25C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Symbol

Min

Typ

Max

Unit

BVDSS
IDSS
IGSS

30
-

1
100

V
A
nA

VGS = 0V, ID = 250A


VDS = 30V, VGS = 0V
VGS = 12V, VDS = 0V

VGS(th)
RDS (ON)
|Yfs|
VSD

1
34
38
49
6
0.75

1.5
55
65
85
1.0

Static Drain-Source On-Resistance

0.5
-

VDS = VGS, ID = 250A


VGS = 10V, ID = 3.4A
VGS = 4.5V, ID = 3A
VGS = 2.5V, ID = 2A
VDS = 5V, ID = 3.4A
VGS = 0V, IS = 1A

Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf

422
41
39
1.26
5.4
12.3
0.8
1.2
1.6
7.4
31.2
15.6

Forward Transfer Admittance


Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:

m
S
V
pF
pF
pF

nC
nC
nC
nC
ns
ns
ns
ns

Test Condition

VDS = 15V, VGS = 0V,


f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 15V,
ID = 3.1A

VDS = 15V, VGS = 10V,


RL = 4.7, RG =3,

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.

DMG6601LVT
Document number: DS35405 Rev. 4 - 2

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DMG6601LVT

Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TJ = +25C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Symbol

Min

Typ

Max

Unit

BVDSS
IDSS
IGSS

-30
-

-1
100

V
A
nA

VGS = 0V, ID = -250A


VDS = -30V, VGS = 0V
VGS = 12V, VDS = 0V

VGS(th)
RDS (ON)
|Yfs|
VSD

-0.8
70
81
105
5.3
-0.8

-1.2
110
142
190
-1.0

Static Drain-Source On-Resistance

-0.4
-

VDS = VGS, ID = -250A


VGS = -10V, ID = -2.3A
VGS = -4.5V, ID = -2A
VGS = -2.5V, ID = -1A
VDS = -5V, ID = -2.3A
VGS = 0V, IS = -1A

Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf

541
46
43
16.9
6.5
13.8
1.0
1.6
1.7
4.6
18.3
2.2

Forward Transfer Admittance


Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:

m
S
V
pF
pF
pF

nC
nC
nC
nC
ns
ns
ns
ns

Test Condition

VDS = -15V, VGS = 0V,


f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS = -10V, VDS = -15V,
ID = -2.3A

VDS = -15V, VGS = -10V,


RL = 6, RG = 3,

7. Short duration pulse test used to minimize self-heating effect.


8. Guaranteed by design. Not subject to product testing.

N Channel - Q1

VGS = 5.0V

16

VGS = 4.5V

20

VGS = 4.0V

VGS = 10V

VDS = 5.0V

VGS = 3.5V
VGS = 3.0V
VGS = 2.5V

ID, DRAIN CURRENT (A)

20

ID, DRAIN CURRENT (A)

ADVANCE INFORMTION

Electrical Characteristics - Q2 (@TA = +25C, unless otherwise specified.)

12

8
VGS = 2.0V

15

10

TA = 150C
TA = 125C

0.5
1.0
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic

DMG6601LVT
Document number: DS35405 Rev. 4 - 2

2.0

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T A = 85C
T A = 25C
TA = -55C

1
2
3
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics

August 2013
Diodes Incorporated

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

0.08
0.07
0.06
VGS = 2.5V

0.05

VGS = 4.5V

0.04
VGS = 10V

0.03
0.02
0.01
0

5
10
15
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage

0.08
0.07
0.06
0.05
0.04
ID = 2A

0.03
0.02
0.01
0

20

4
5
6
7
8
9
10
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage

1.8

0.10
0.09
0.08

RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)

VGS = 4.5V
TA = 150C

0.07
TA = 125C

0.06

TA = 85C

0.05
0.04

TA = 25C

0.03
TA = -55C

0.02

VGS = 10V
ID = 10A

1.6

1.4

VGS = 4.5V
ID = 5A

1.2

1.0

0.8

0.01
0

6
8 10 12 14 16 18
ID, DRAIN CURRENT (A)
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature

0.6
-50

20

-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature

0.10

1.6

0.09

VGS(th), GATE THRESHOLD VOLTAGE (V)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()


RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

ADVANCE INFORMTION

DMG6601LVT

0.08
0.07
0.06
VGS = 4.5V
ID = 5A

0.05
0.04

VGS = 10V
ID = 10A

0.03
0.02
0.01
0
-50

-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 7 On-Resistance Variation with Temperature

DMG6601LVT
Document number: DS35405 Rev. 4 - 2

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1.4
1.2
ID = 1mA

1.0
0.8

ID = 250A

0.6
0.4
0.2
0
-50

-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature

August 2013
Diodes Incorporated

DMG6601LVT
1,000

20

CT, JUNCTION CAPACITANCE (pF)

18
IS, SOURCE CURRENT (A)

14
12
10
TA = 150C

TA = 125C

6
TA = 85C

T A = 25C

2
0

Ciss

100

Coss
Crss
f = 1MHz

TA = -55C

0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current

10

5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance

30

10
VGS GATE THRESHOLD VOLTAGE (V)

8
VDS = 15V
ID = 3.1A

4
6
8
10
12
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate Charge

1
r(t), TRANSIENT THERMAL RESISTANCE

ADVANCE INFORMTION

16

14

D = 0.9
D = 0.7
D = 0.5
D = 0.3

0.1

D = 0.1
D = 0.05

D = 0.02

0.01

D = 0.01
D = 0.005

RJA(t) = r(t) * RJA


RJA = 143C/W
Duty Cycle, D = t1/ t2

D = Single Pulse

0.001
0.00001

0.0001

DMG6601LVT
Document number: DS35405 Rev. 4 - 2

0.001

0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 12 Transient Thermal Resistance

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10

100

1,000

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DMG6601LVT
P Channel - Q2
10

10

VGS = -10V

VGS = -3.5V

-ID, DRAIN CURRENT (A)

-ID, DRAIN CURRENT (A)

VDS = -5.0V
VGS = -4.0V

VGS = -4.5V

VGS = -3.0V

VGS = -2.5V
VGS = -2.0V

TA = 150C
T A = 125 C

0.5
1.0
1.5
-VDS, DRAIN -SOURCE VOLTAGE (V)
Fig. 13 Typical Output Characteristics

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

0.20
0.18
0.16
0.14
0.12

VGS = -2.5V

0.10

VGS = -4.5V

0.08
VGS = -10V

0.06
0.04
0.02
0

2
4
6
8
-ID, DRAIN SOURCE CURRENT (A)
Fig. 15 Typical On-Resistance vs.
Drain Current and Gate Voltage

2.0

TA = 85C
TA = 25C
T A = -55C

1
2
3
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 14 Typical Transfer Characteristics

0.16

0.12

0.08
ID = -2A

0.04

10

4
5
6
7
8
9
10
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 16 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage

1.8

0.20
VGS = -4.5V

RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

0
0

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

ADVANCE INFORMTION

VGS = -5.0V

0.16
TA = 150C

0.12

TA = 125C
TA = 85C
TA = 25C

0.08

T A = -55C

0.04

2
4
6
8
-ID, DRAIN SOURCE CURRENT (A)
Fig. 17 Typical On-Resistance vs.
Drain Current and Temperature

DMG6601LVT
Document number: DS35405 Rev. 4 - 2

10

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VGS = -10V
ID = -10A

1.6

1.4
VGS = -4.5V
ID = -5A

1.2
1.0

0.8
0.6
-50

-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 18 On-Resistance Variation with Temperature

August 2013
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-VGS(TH), GATE THRESHOLD VOLTAGE (V)

RDS(on), DRAIN-SOURCE ON-RESISTANCE ()

1.6

0.16

VGS = -4.5V
ID = -5A

0.12

VGS = -10V
ID = -10A

0.08

0.04

0
-50

1.2
1.0
-ID = 1mA

0.8
-I D = 250A

0.6
0.4
0.2

-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (C)
Fig. 20 Gate Threshold Variation vs. Ambient Temperature
1,000
CT, JUNCTION CAPACITANCE (pF)

10

-IS, SOURCE CURRENT (A)

1.4

0
-50

-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 19 On-Resistance Variation with Temperature

4
T A= 150 C
TA= 125C

T A= 85 C

f = 1MHz

Ciss

100
Coss
Crss

TA= 25C

T A= -55C

0.3
0.6
0.9
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 21 Diode Forward Voltage vs. Current

1.5

10

5
10
15
20
25
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 22 Typical Junction Capacitance

30

10
-VGS, GATE-SOURCE VOLTAGE (V)

ADVANCE INFORMTION

DMG6601LVT

VDS = -15V
ID = -2.3A

4
6
8
10
12
Qg, TOTAL GATE CHARGE (nC)
Fig. 23 Gate-Charge Characteristics

DMG6601LVT
Document number: DS35405 Rev. 4 - 2

14

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DMG6601LVT

ADVANCE INFORMTION

r(t), TRANSIENT THERMAL RESISTANCE

1
D = 0.7
D = 0.5
D = 0.3

0.1

D = 0.1

D = 0.9

D = 0.05

D = 0.02

0.01

D = 0.01

RJA(t) = r(t) * RJA


RJA = 143C/W
Duty Cycle, D = t1/ t2

D = 0.005

Single Pulse

0.001
0.00001

0.0001

0.001

0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 24 Transient Thermal Resistance

10

100

1,000

Package Outline Dimensions


D

TSOT26
Dim Min Max Typ
A
1.00

A1
0.01 0.10

A2
0.84 0.90

D
2.90

E
2.80

E1
1.60

b
0.30 0.45

c
0.12 0.20

e
0.95

e1
1.90

L
0.30 0.50
L2
0.25

0
8
4
1
4
12

All Dimensions in mm

e1

E1

L2

c
4x1

6x b
A

A2
A1

Suggested Pad Layout


C

Dimensions
C
X
Y
Y1

Y1

Value
(in mm)
0.950
0.700
1.000
3.199

Y (6x)
X (6x)

DMG6601LVT
Document number: DS35405 Rev. 4 - 2

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DMG6601LVT
IMPORTANT NOTICE

ADVANCE INFORMTION

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright 2012, Diodes Incorporated
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DMG6601LVT
Document number: DS35405 Rev. 4 - 2

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