PROFET BTS 432 E2

Smart Highside Power Switch

Product Summary
VLoad dump
80
Vbb-VOUT Avalanche Clamp
58
Vbb (operation)
4.5 ... 42
Vbb (reverse)
-32
RON
38
IL(SCp)
44
IL(SCr)
35
IL(ISO)
11

Features
Load dump and reverse battery protection1)
Clamp of negative voltage at output
Short-circuit protection
Current limitation
Thermal shutdown
Diagnostic feedback
Open load detection in ON-state
CMOS compatible input
Electrostatic discharge (ESD) protection
Loss of ground and loss of Vbb protection2)
Overvoltage protection
Undervoltage and overvoltage shutdown with autorestart and hysteresis
Green Product (RoHS compliant)
AEC qualified

PG-TO220-5-11

V
V
V
V
m
A
A
A

PG-TO263-5-2
5

Standard

SMD

Application

C compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays and discrete circuits

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions.

R bb

Voltage

Overvoltage

Current

Gate

source

protection

limit

protection

+ V bb

V Logic

Charge pump

sensor

Level shifter

Limit for
unclamped
ind. loads

Rectifier

IN

OUT

Temperature
sensor

Open load
ESD

Voltage

Logic

Load

detection

ST

Short circuit
detection
GND

PROFET

1
Signal GND

1)
2)

Load GND

No external components required, reverse load current limited by connected load.

Additional external diode required for charged inductive loads

Data Sheet

1 of 14

2010-Jan-26

PROFET BTS 432 E2

Pin

Symbol

Function

GND

Logic ground

IN

Input, activates the power switch in case of logical high signal

Vbb

Positive power supply voltage,

the tab is shorted to this pin

ST

Diagnostic feedback, low on failure

OUT
(Load, L)

Output to the load

Maximum Ratings at Tj = 25 C unless otherwise specified

Parameter
Supply voltage (overvoltage protection see page 3)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI= 2 , RL= 1.1 , td= 200 ms, IN= low or high
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC)
Inductive load switch-off energy dissipation,
single pulse
Tj=150 C:
Electrostatic discharge capability (ESD)
(Human Body Model)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)

Symbol
Vbb
Vs3)

Values

IL
Tj
Tstg
Ptot

self-limited
-40 ...+150
-55 ...+150
125

A
C

1.7
2.0

J
kV

-0.5 ... +6
5.0
5.0

V
mA

1
75
typ. 33

K/W

EAS
VESD
VIN
IIN
IST

63
66.5

Unit
V
V

see internal circuit diagrams page 6...

Thermal resistance

3)
4)

chip - case:
junction - ambient (free air):
SMD version, device on pcb4):

RthJC
RthJA

VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.

Data Sheet

2010-Jan-26

PROFET BTS 432 E2

Electrical Characteristics
Parameter and Conditions

Symbol

at Tj = 25 C, Vbb = 12 V unless otherwise specified

Values
min
typ
max

Unit

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)
IL = 2 A

Tj=25 C: RON

--

30

38

IL(ISO)

55
11

70
--

IL(GNDhigh)

--

--

mA

ton
toff

50
10

160
--

300
80

dV /dton

0.4

--

2.5

V/s

-dV/dtoff

--

V/s

Vbb(on)
Vbb(under)
Vbb(u rst)
Vbb(ucp)

4.5
2.4
---

---6.5

42
4.5
4.5
7.5

V
V
V
V

Vbb(under)

--

0.2

--

Vbb(over)
Vbb(o rst)
Vbb(over)
Vbb(AZ)

--0.2
-67
12
18
6

52
----

V
V
V
V

25
60
--

IL(off)

42
42
-60
63
----

IGND

--

1.1

--

mA

Tj=150 C:
Nominal load current (pin 3 to 5)
ISO Proposal: VON = 0.5 V, TC = 85 C
Output current (pin 5) while GND disconnected or
GND pulled up, VIN= 0, see diagram page 7,
Tj =-40...+150C
Turn-on time
to 90% VOUT:
Turn-off time
to 10% VOUT:
RL = 12 , Tj =-40...+150C
Slew rate on
10 to 30% VOUT, RL = 12 , Tj =-40...+150C
Slew rate off
70 to 40% VOUT, RL = 12 , Tj =-40...+150C
Operating Parameters
Operating voltage 5)
Tj =-40...+150C:
Undervoltage shutdown
Tj =-40...+150C:
Undervoltage restart
Tj =-40...+150C:
Undervoltage restart of charge pump
see diagram page 12
Tj =-40...+150C:
Undervoltage hysteresis
Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150C:
Overvoltage restart
Tj =-40...+150C:
Overvoltage hysteresis
Tj =-40...+150C:
6
)
Overvoltage protection
Tj =-40C:
Tj =25...+150C:
Ibb=40 mA
Standby current (pin 3)
Tj=-40...+25C:
VIN=0
Tj=150C:
Leakage output current (included in Ibb(off))
VIN=0
Operating current (Pin 1)7), VIN=5 V
5)
6)
7)

Ibb(off)

At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT Vbb - 2 V
see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load.
Add IST, if IST > 0, add IIN, if VIN>5.5 V

Data Sheet

2010-Jan-26

PROFET BTS 432 E2

Parameter and Conditions

Symbol

at Tj = 25 C, Vbb = 12 V unless otherwise specified

Protection Functions8)
Initial peak short circuit current limit (pin 3 to 5)9),
IL(SCp)
( max 400 s if VON > VON(SC) )
Tj =-40C:
Tj =25C:
Tj =+150C:
Repetitive short circuit current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 10)
Short circuit shutdown delay after input pos. slope
VON > VON(SC),
Tj =-40..+150C: td(SC)

Values
min
typ
max

--24

-44
--

74
---

22

35

--

80

--

400

VON(CL)

--

58

--

VON(SC)
Tjt
Tjt
EAS
ELoad12
ELoad24

-150
---

8.3
-10
--

---1.7
1.3
1.0

V
C
K
J

---

-120

32
--

2
2

---

900
750

mA

min value valid only, if input "low" time exceeds 30 s

Output clamp (inductive load switch off)

at VOUT = Vbb VON(CL), IL= 30 mA
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation10),
Tj Start = 150 C, single pulse
Vbb = 12 V:
Vbb = 24 V:
Reverse battery (pin 3 to 1) 11)
Integrated resistor in Vbb line
Diagnostic Characteristics
Open load detection current
(on-condition)

8)

9)

Unit

-Vbb
Rbb

Tj=-40 C: IL (OL)
Tj=25..150C:

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
Short circuit current limit for max. duration of 400 s, prior to shutdown (see td(SC) page 4)

While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * iL(t) dt, approx.
VON(CL)
2
EAS= 1/2 * L * IL * (
), see diagram page 8.
VON(CL) - Vbb
11) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current IGND of 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional
external GND-resistor (150 ). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
10)

Data Sheet

2010-Jan-26

PROFET BTS 432 E2

Parameter and Conditions

Symbol

Values
min
typ
max

VIN(T+)

1.5

--

2.4

VIN(T-)

1.0

--

--

-1

0.5
--

-30

V
A

10

25

50

80

200

400

td(ST)

350

--

1600

VST(high)
VST(low)

5.4
--

6.1
--

-0.4

at Tj = 25 C, Vbb = 12 V unless otherwise specified

Input and Status Feedback12)

Input turn-on threshold voltage

Unit

Tj =-40..+150C:
Input turn-off threshold voltage
Tj =-40..+150C:
Input threshold hysteresis
Off state input current (pin 2)

VIN(T)
VIN = 0.4 V: IIN(off)

On state input current (pin 2)

VIN = 3.5 V: IIN(on)

Status invalid after positive input slope

(short circuit)
Tj=-40 ... +150C:
Status invalid after positive input slope
(open load)
Tj=-40 ... +150C:
Status output (open drain)
Zener limit voltage Tj =-40...+150C, IST = +1.6 mA:
ST low voltage Tj =-40...+150C, IST = +1.6 mA:

12)

td(ST SC)

If a ground resistor RGND is used, add the voltage drop across this resistor.

Data Sheet

2010-Jan-26

PROFET BTS 432 E2

Truth Table
Input-

Output

Status

Level

level

432E2

Normal
operation
Open load

L
H
L
H

L
H

H
H
H
L

Short circuit
to GND
Short circuit
to Vbb
Overtemperature
Undervoltage
Overvoltage

L
H
L
H
L
H
L
H
L
H

13)

H
L
L
H
H
L
L
L
L
L
L

H
L
H
H (L14)
L
L
H
H
H
H

L = "Low" Level
H = "High" Level

Terms

Input circuit (ESD protection)

Ibb
I IN
2

13)
14)

IN

VST

bb

IN

Vbb

IN

IL
PROFET

I ST
V

OUT

ESDZDI1 ZDI2

VON

GND

ST
GND
1
R

IGND

ZDI1 6.1 V typ., ESD zener diodes are not designed for
continuous current

VOUT

GND

Power Transistor off, high impedance

Low resistance short Vbb to output may be detected by no-load-detection

Data Sheet

2010-Jan-26

PROFET BTS 432 E2

Status output

Overvolt. and reverse batt. protection

+5V

R ST(ON)

GND

+ V bb
V

ST

R IN

R bb

IN

Logic

ESDZD

R ST ST

PROFET

GND

ESD-Zener diode: 6.1 V typ., max 5 mA;

RST(ON) < 250 at 1.6 mA, ESD zener diodes are not
designed for continuous current

OUT

R GND
Signal GND

Rbb = 120 typ., VZ +Rbb*40 mA = 67 V typ., add

RGND, RIN, RST for extended protection

Short Circuit detection

Fault Condition: VON > 8.3 V typ.; IN high

Open-load detection
+ V bb

ON-state diagnostic condition: VON < RON * IL(OL); IN

high

V
ON

+ V bb

OUT

Logic
unit

Short circuit
detection

VON

ON

OUT

Open load
detection

Logic
unit

Inductive and overvoltage output clamp

+ V bb
V

Z
V

ON

GND disconnect
OUT
GND

VON clamped to 58 V typ.

IN

Vbb
PROFET

4
V

bb

IN

ST

OUT

ST
GND
1

V
GND

Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) .

Due to VGND >0, no VST = low signal available.

Data Sheet

2010-Jan-26

PROFET BTS 432 E2

GND disconnect with GND pull up
3

IN

Vbb

high
2

PROFET
4

OUT

IN

PROFET

ST

GND

V
bb

V
IN ST

OUT

ST
GND
1

1
V

Vbb

GND

bb

Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.

Inductive Load switch-off energy

dissipation

Vbb disconnect with charged inductive

load

E bb
E AS

3
high
2

IN

Vbb
IN

PROFET

OUT

PROFET

ST

GND

ST
GND

ELoad

Vbb
OUT

EL

ER

bb

Energy dissipated in PROFET EAS = Ebb + EL - ER.

2

ELoad < EL, EL = 1/2 * L * I L

Data Sheet

2010-Jan-26

PROFET BTS 432 E2

Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type
Logic version

BTS 432E2

Overtemperature protection
Tj >150 C, latch function15)16)
Tj >150 C, with auto-restart on cooling
Short-circuit to GND protection
switches off when VON>8.3 V typ.15)
(when first turned on after approx. 200 s)

X
X

Open load detection

in OFF-state with sensing current 30 A typ.
in ON-state with sensing voltage drop across
power transistor

Undervoltage shutdown with auto restart

Overvoltage shutdown with auto restart

Status feedback for

overtemperature
short circuit to GND
short to Vbb

X
X
-17)

open load

undervoltage

overvoltage

Status output type

CMOS
Open drain

Output negative voltage transient limit

(fast inductive load switch off)
to Vbb - VON(CL)

Load current limit

high level (can handle loads with high inrush currents)

medium level
low level (better protection of application)

15)

Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
16) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
17) Low resistance short V to output may be detected by no-load-detection
bb

Data Sheet

2010-Jan-26

PROFET BTS 432 E2

Timing diagrams
Figure 2b: Switching an inductive load

Figure 1a: Vbb turn on:

IN

V
bb

IN
t d(bb IN)

td(ST)

ST
*)

OUT

OUT

A
I

ST open drain

IL(OL)
t

A
in case of too early VIN=high the device may not turn on (curve A)
td(bb IN) approx. 150 s

Figure 2a: Switching a lamp,

*) if the time constant of load is too large, open-load-status may

occur

Figure 3a: Turn on into short circuit,

IN

IN

ST

ST

OUT

OUT

td(SC)

t
td(SC) approx. 200s if Vbb - VOUT > 8.3 V typ.

Data Sheet

10

2010-Jan-26

PROFET BTS 432 E2

Figure 4a: Overtemperature:
Reset if Tj <Tjt

Figure 3b: Turn on into overload,

IN
IN

IL

ST

I L(SCp)
IL(SCr)

OUT

ST

t
Heating up may require several milliseconds , Vbb - VOUT < 8.3 V
typ.

Figure 5a: Open load: detection in ON-state, turn

on/off to open load

Figure 3c: Short circuit while on:

IN

IN

ST

ST

V OUT

IL

t
d(ST)

OUT

I
**)

open
t

t
**) current peak approx. 20 s

Data Sheet

11

2010-Jan-26

PROFET BTS 432 E2

Figure 6b: Undervoltage restart of charge pump

Figure 5b: Open load: detection in ON-state, open

load occurs in on-state

VON [V]
VON(CL)

V on

IN

off
td(ST OL1)

t d(OL ST2)

ST

OUT

off
V

bb(u rst)

normal

open

normal

V
V

bb(o rst)

bb(u cp)

bb(under)

bb(over)

on
V bb
Vbb [V]

td(ST OL1) = tbd s typ., td(ST OL2) = tbd s typ

charge pump starts at Vbb(ucp) =6.5 V typ.

Figure 6a: Undervoltage:

Figure 7a: Overvoltage:

IN
IN

V bb

Vbb
V

bb(under)

V ON(CL)

Vbb(over)

V bb(o rst)

Vbb(u cp)
V
bb(u rst)

OUT

V OUT

ST open drain

ST
t

Data Sheet

12

2010-Jan-26

PROFET BTS 432 E2

Package and Ordering Code

All dimensions in mm

PG-TO220-5-11

SMD PG-TO263-5-2

BTS 432 E2

BTS432E2 E3062A

4.4
10 0.2

3.7 0.3

5 x 0.8 0.1

1)

3.9 0.4
M

A C

B
0.05
2.4
0.1
4.7 0.5

9.25 0.2

9.25 0.2

0...0.15

0.25

8.5 1)

0...0.15

C
0.5 0.1

4 x 1.7

(15)

2.8 0.2
8.6 0.3

0.05
2.4

1.6 0.3

1 0.3

1.27 0.1

10.2 0.3

1)

12.95

17 0.3

15.65 0.3

0...0.3

1.27 0.1

0...0.3

4.4

1.3 0.3

8.5 1)
3.7 -0.15

2.7 0.3

7.55 1)

10 0.2
9.9 0.2

5 x 0.8 0.1

0.5 0.1
4 x 1.7

8.4 0.4

0.25

A B

8 MAX.

0.1 B

Typical
All metal surfaces tin plated, except area of cut.

1) Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.

GPT09062

Green Product
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

Revision History
Version

Date

Changes

Rev. 1.1
Rev. 1.0

2010-01-26
2009-11-12

Page 13: Package drawing for PG-TO220-5-11 corrected.

RoHS-compliant version of BTS432E2
Removal of straight lead package variant E3043
Page 1, page 13: RoHS compliance statement and Green product feature added
Page 1, page 13: Change to RoHS compliant packages; PG-TO220-5-11 for
standard (staggered) variant; PG-TO263-5-2 for E3062A variant.
Page 2: Thermal resistance junction to ambient for SMD version set to typically
33K/W.
Page 2: Pin marking removed.
Page 6, 9: Discontinued variants removed from truth table & options overview.
Legal disclaimer updated

Data Sheet

13

2010-Jan-26

PROFET BTS 432 E2

Published by
Infineon Technologies AG
81726 Munich, Germany
2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.

Data Sheet

14

2010-Jan-26