MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors

MJH11017, MJH11019,
MJH11021(PNP)
MJH11018, MJH11020,
MJH11022(NPN)
Complementary Darlington
Silicon Power Transistors
These devices are designed for use as general purpose amplifiers,
low frequency switching and motor control applications.
Features
High DC Current Gain @ 10 Adc hFE = 400 Min (All Types)

CollectorEmitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) MJH11018, 17

= 200 Vdc (Min) MJH11020, 19
= 250 Vdc (Min) MJH11022, 21
Low CollectorEmitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
= 1.8 V (Typ) @ IC = 10 A
Monolithic Construction
PbFree Packages are Available*
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15 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
150250 VOLTS, 150 WATTS
NPN
BASE
1
BASE
1
EMITTER 3
MJH11018
MJH11020
MJH11022
MAXIMUM RATINGS
Rating
Symbol
CollectorEmitter Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
VCEO
CollectorBase Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
VCB
EmitterBase Voltage
VEB
5.0
Vdc
IC
15
30
Adc
Base Current
IB
0.5
Adc
Total Device Dissipation @ TC = 25_C

Derate above 25_C
PD
150
1.2
W
W/_C
TJ, Tstg
65 to
+150
_C
Collector Current
Continuous
Peak (Note 1)
Operating and Storage Junction Temperature

Range
Max
Characteristic
EMITTER 3
MJH11017
MJH11019
MJH11021
Unit
Vdc
150
200
250
SOT93
(TO218)
CASE 340D
STYLE 1
Vdc
150
200
250
THERMAL CHARACTERISTICS
Thermal Resistance, JunctiontoCase
PNP
COLLECTOR 2
COLLECTOR 2
Symbol
Max
Unit
RqJC
0.83
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
3
TO247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will

be available only in the TO247
package. Reference FPCN# 16827.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
July, 2012 Rev. 9
Publication Order Number:

MJH11017/D
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

MARKING DIAGRAMS
TO247
TO218
MJH110xx
AYWWG
1 BASE
AYWWG
MJH110xx
3 EMITTER
1 BASE
3 EMITTER
2 COLLECTOR
2 COLLECTOR
A
Y
WW
G
MJH110xx
=
=
=
=
=
Assembly Location
Year
Work Week
PbFree Package
Device Code
xx = 17, 19, 21, 18, 20, 22
ORDERING INFORMATION
Device Order Number
Package Type
Shipping
MJH11017G
TO218
(PbFree)
30 Units / Rail
MJH11018G
TO218
(PbFree)
30 Units / Rail
MJH11019G
TO218
(PbFree)
30 Units / Rail
MJH11020G
TO218
(PbFree)
30 Units / Rail
MJH11021G
TO218
(PbFree)
30 Units / Rail
MJH11022G
TO218
(PbFree)
30 Units / Rail
MJH11017G
TO247
(PbFree)
30 Units / Rail
MJH11018G
TO247
(PbFree)
30 Units / Rail
MJH11019G
TO247
(PbFree)
30 Units / Rail
MJH11020G
TO247
(PbFree)
30 Units / Rail
MJH11021G
TO247
(PbFree)
30 Units / Rail
MJH11022G
TO247
(PbFree)
30 Units / Rail
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2
PD, POWER DISSIPATION (WATTS)
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (C)
140
160
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic
Symbol
Min
Max
150
200
250
1.0
1.0
1.0
0.5
5.0
2.0
400
100
15,000
2.5
4.0
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 2)

(IC = 0.1 Adc, IB = 0)
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
Collector Cutoff Current

(VCE = 75 Vdc, IB = 0)
(VCE = 100 Vdc, IB = 0)
(VCE = 125 Vdc, IB = 0)
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
VCEO(sus)
ICEO
Collector Cutoff Current

(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)
ICEV
Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0)
IEBO
Vdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)
hFE
CollectorEmitter Saturation Voltage

(IC = 10 Adc, IB = 100 mA)
(IC = 15 Adc, IB = 150 mA)
VCE(sat)
Vdc
BaseEmitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)
VBE(on)
2.8
Vdc
BaseEmitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)
VBE(sat)
3.8
Vdc
fT
3.0
Cob
400
600
pF
hfe
75
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJH11018, MJH11020, MJH11022

MJH11017, MJH11019, MJH11021
SmallSignal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Typical
Characteristic
Delay Time
Rise Time
Storage Time
(VCC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 5.0 V) (See Figure 2)
Fall Time
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
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3
Symbol
NPN
PNP
Unit
td
150
75
ns
tr
1.2
0.5
ms
ts
4.4
2.7
ms
tf
2.5
2.5
ms

VCC
100 V
RC
SCOPE
TUT
RB & RC varied to obtain desired current levels
D1, must be fast recovery types, e.g.:
1N5825 used above IB 100 mA
MSD6100 used below IB 100 mA
V2
APPROX
+12 V
0
V1
APPROX
-8.0 V
tr, tf 10 ns
Duty Cycle = 1.0%
RB
51
D1
+4.0 V
25 ms
For td and tr, D1 is disconnected

and V2 = 0
For NPN test circuit, reverse diode and voltage polarities.
r(t), EFFECTIVE TRANSIENT THERMAL

RESISTANCE (NORMALIZED)
Figure 2. Switching Times Test Circuit
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.02
0.03
0.01
SINGLE PULSE
0.02
0.01
0.01
0.02 0.03
P(pk)
RqJC(t) = r(t) RqJC

RqJC = 0.83C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
0.05
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0

t, TIME (ms)
10
20
30
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200 300
500
1000
Figure 3. Thermal Response

FORWARD BIAS
IC, COLLECTOR CURRENT (AMPS)
TC = 25C SINGLE PULSE
30
20
10
5.0
2.0
1.0
0.5
0.2
0
There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1 ms
0.5 ms
1.0 ms
5.0 ms
dc
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
2.0 3.0 5.0 10
20 30 50
100 150 250
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Bias

Safe Operating Area (FBSOA)
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4

REVERSE BIAS
30
For inductive loads, high voltage and high current must be

sustained simultaneously during turnoff, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltagecurrent conditions during
reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 5 gives RBSOA characteristics.
L = 200 mH
IC/IB1 50
TC = 100C
VBE(off) = 0-5.0 V
RBE = 47 W
DUTY CYCLE = 10%
20
10
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
0
0 20
140
60
100
180
220
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
260
Figure 5. Maximum Rated Reverse Bias

Safe Operating Area (RBSOA)
PNP
10,000
VCE = 5.0 V
3000
2000
TC = 150C
1000
25C
500
-55C
200
100
VCE = 5.0 V
5000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
10,000
7000
5000
NPN
TC = 150C
2000
25C
1000
500
-55C
200
100
0.2
0.3
0.5 0.7
1.0
3.0
5.0
10
15
0.2
0.3
0.5 0.7 1.0
3.0
5.0 7.0
Figure 6. DC Current Gain
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5
10
15

NPN
4.5
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
PNP
TJ = 25C
4.0
3.5
3.0
2.5
IC = 15 A
2.0
IC = 10 A
1.5
1.0
1.0
IC = 5.0 A
2.0 3.0 5.0
10
20 30
50
100 200 300 500
1000
4.5
TJ = 25C
4.0
3.5
3.0
IC = 15 A
2.5
2.0
IC = 10 A
1.5
IC = 5.0 A
1.0
1.0
2.0 3.0 5.0
10
20 30
50
100 200 300 500 1000
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 7. Collector Saturation Region

PNP
NPN
4.0
4.0
3.5
3.5
TJ = 25C
VOLTAGE (VOLTS)
VOLTAGE (VOLTS)
3.0
2.5
VBE(sat) @ IC/IB = 100
2.0
1.5
TJ = 25C
3.0
2.5
VBE(sat) @ IC/IB = 100
2.0
1.5
VBE @ VCE = 5.0 V
VBE @ VCE = 5.0 V
1.0
1.0
VCE(sat) @ IC/IB = 100
0.5
0.2 0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
0.5
0.2
20
VCE(sat) @ IC/IB = 100

0.5 0.7 1.0
2.0
5.0
10
Figure 8. On Voltages
PNP
NPN
MJH11017
MJH11019
MJH11021
MJH11018
MJH11020
MJH11022
COLLECTOR
BASE
COLLECTOR
BASE
EMITTER
EMITTER
Figure 9. Darlington Schematic
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6
20

PACKAGE DIMENSIONS
SOT93 (TO218)
CASE 340D02
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
Q
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
J
H
MILLIMETERS
MIN
MAX
--20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
--16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF
STYLE 1:
PIN 1.
2.
3.
4.
V
G
INCHES
MIN
MAX
--0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
--0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069
BASE
COLLECTOR
EMITTER
COLLECTOR
TO247
CASE 340L02
ISSUE F
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
E
U
L
4
Q
1
0.63 (0.025)
P
Y
K
F 2 PL
D 3 PL
0.25 (0.010)
Y Q
T B
STYLE 3:
PIN 1.
2.
3.
4.
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
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7
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
BASE
COLLECTOR
EMITTER
COLLECTOR
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
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MJH11017/D

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors

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MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors

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MJH11017, MJH11019,

High DC Current Gain @ 10 Adc hFE = 400 Min (All Types)

VCEO(sus) = 150 Vdc (Min) MJH11018, 17

Total Device Dissipation @ TC = 25_C

Operating and Storage Junction Temperature

Stresses exceeding Maximum Ratings may damage the device. Maximum

NOTE: Effective June 2012 this device will

July, 2012 Rev. 9

Publication Order Number:

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

PD, POWER DISSIPATION (WATTS)

Figure 1. Power Derating

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

CollectorEmitter Sustaining Voltage (Note 2)

Collector Cutoff Current

Collector Cutoff Current

Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0)

CollectorEmitter Saturation Voltage

BaseEmitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)

BaseEmitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)

MJH11018, MJH11020, MJH11022

(VCC = 100 V, IC = 10 A, IB = 100 mA

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

For td and tr, D1 is disconnected

For NPN test circuit, reverse diode and voltage polarities.

r(t), EFFECTIVE TRANSIENT THERMAL

Figure 2. Switching Times Test Circuit

RqJC(t) = r(t) RqJC

2.0 3.0 5.0

Figure 3. Thermal Response

TC = 25C SINGLE PULSE

There are two limitations on the power handling ability of

Figure 4. Maximum Rated Forward Bias

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

IC, COLLECTOR CURRENT (AMPS)

For inductive loads, high voltage and high current must be

Figure 5. Maximum Rated Reverse Bias

hFE , DC CURRENT GAIN

IC, COLLECTOR CURRENT (AMPS)

0.5 0.7 1.0

IC, COLLECTOR CURRENT (AMPS)

Figure 6. DC Current Gain

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

100 200 300 500

2.0 3.0 5.0

100 200 300 500 1000

IB, BASE CURRENT (mA)

IB, BASE CURRENT (mA)

Figure 7. Collector Saturation Region

VBE @ VCE = 5.0 V

VBE @ VCE = 5.0 V

VCE(sat) @ IC/IB = 100

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Darlington Schematic

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

PUBLICATION ORDERING INFORMATION

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