AP9T15GH/J

RoHS-compliant Product

Advanced Power
Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

Low Gate Charge

Capable of 2.5V Gate Drive

Single Drive Requirement

RoHS Compliant

BVDSS

20V

RDS(ON)

50m

ID

12.5A

Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.

G D

TO-252(H)

TO-251(J)

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

20

VGS

Gate-Source Voltage

+16

ID@TC=25

Continuous Drain Current, V GS @ 4.5V

12.5

ID@TC=100

Continuous Drain Current, V GS @ 4.5V

60

IDM

Pulsed Drain Current

PD@TC=25

Total Power Dissipation

12.5

Linear Derating Factor

0.1

W/

PD@TA=25

Total Power Dissipation

TSTG

Storage Temperature Range

-55 to 150

TJ

Operating Junction Temperature Range

-55 to 150

Thermal Data
Symbol

Parameter

Value

Units

Rthj-c

Maximum Thermal Resistance, Junction-case

10

/W

Rthj-a

Maximum Thermal Resistance, Junction-ambient (PCB mount) 3

62.5

/W

Rthj-a

Maximum Thermal Resistance, Junction-ambient

110

/W

Data and specifications subject to change without notice

1
201009303

AP9T15GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)

Parameter

Test Conditions

Drain-Source Breakdown Voltage

Min.

Typ.

20

VGS=4.5V, ID=6A

50

VGS=2.5V, ID=5.2A

80

0.5

1.5

VGS=0V, ID=250uA

Static Drain-Source On-Resistance

Max. Units

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=5V, ID=10A

10

IDSS

Drain-Source Leakage Current

VDS=20V, VGS=0V

uA

Drain-Source Leakage Current (T j=125 C) VDS=16V ,VGS=0V

250

uA

Gate-Source Leakage

VGS=+16V, VDS=0V

+100

nA

ID=10A

nC

IGSS

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDS=16V

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

nC

td(on)

Turn-on Delay Time

VDS=10V

ns

tr

Rise Time

ID=10A

55

ns

td(off)

Turn-off Delay Time

RG=3.3,VGS=5V

10

ns

tf

Fall Time

RD=1

ns

Ciss

Input Capacitance

VGS=0V

360

580

pF

Coss

Output Capacitance

VDS=20V

70

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

50

pF

Rg

Gate Resistance

f=1.0MHz

1.67

Min.

Typ.

Source-Drain Diode
Symbol

Parameter
2

Test Conditions

Max. Units

VSD

Forward On Voltage

IS=10A, VGS=0V

1.3

trr

Reverse Recovery Time2

IS=10A, VGS=0V,

17

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/s

nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

AP9T15GH/J
50

40

T C = 150 o C

T C =25 C
ID , Drain Current (A)

ID , Drain Current (A)

5.0V
4.5V

40

30

3.5V
20

2.5V

30

5.0V
4.5V

20

3.5V

10

2.5V

10

V G =1.5V

V G =1.5V
0

0
0

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

45

1.8

I D = 5.2 A

43

I D =6A
V G =4.5V

1.6

Normalized RDS(ON)

RDS(ON) (m)

T C =25 C
41

39

37

35

1.4

1.2

1.0

0.8

33

0.6
0

10

-50

V GS , Gate-to-Source Voltage (V)

50

100

150

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature
2.0

10

Normalized VGS(th) (V)

IS(A)

T j =150 o C

T j =25 o C

1.5

1.0

0.5
2

0.0
0

0.2

0.4

0.6

0.8

V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

1.2

-50

50

100

150

T j , Junction Temperature ( o C)

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature
3

AP9T15GH/J
f=1.0MHz
14

1000

I D =10A
C iss

V DS =10V
V DS =12V
V DS =16V

10

C (pF)

VGS , Gate to Source Voltage (V)

12

100

C oss
C rss

10

0
0

10

12

13

17

21

25

29

V DS , Drain-to-Source Voltage (V)

Q G , Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Normalized Thermal Response (Rthjc)

100

Operation in this
area limited by
RDS(ON)

100us
ID (A)

10

1ms
10ms
100ms
DC

T c =25 C
Single Pulse

Duty factor = 0.5

0.2

0.1

0.1
0.05

PDM
0.02

t
T

0.01

Duty Factor = t/T

Peak Tj = PDM x Rthjc + T C

Single Pulse

0.01

0.1
0.1

10

100

0.00001

0.0001

V DS , Drain-to-Source Voltage (V)

Fig 9. Maximum Safe Operating Area

0.001

0.01

0.1

10

t , Pulse Width (s)

Fig 10. Effective Transient Thermal Impedance

VG

VDS
90%

QG
4.5V
QGS

QGD

10%
VGS
td(on) tr

td(off)tf

Fig 11. Switching Time Waveform

Charge

Fig 12. Gate Charge Waveform