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Preliminary Data Sheet No.

PD60062-K

IR2153(D) (S)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features

Product Summary

Integrated 600V half-bridge gate driver


15.6V zener clamp on Vcc
True micropower start up
Tighter initial deadtime control
Low temperature coefficient deadtime
Shutdown feature (1/6th Vcc) on CT pin
Increased undervoltage lockout Hysteresis (1V)
Lower power level-shifting circuit
Constant LO, HO pulse widths at startup
Lower di/dt gate driver for better noise immunity
Low side output in phase with RT
Internal 50nsec (typ.) bootstrap diode (IR2153D)
Excellent latch immunity on all inputs and outputs
ESD protection on all leads

VOFFSET

600V max.

Duty Cycle

50%

Tr/Tp

80/40ns

Vclamp

15.6V

Deadtime (typ.)

1.2 s

Packages

Description
The IR2153(D)(S) are an improved version of the
popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front
8 Lead SOIC
8 Lead PDIP
end oscillator similar to the industry standard CMOS
555 timer. The IR2153 provides more functionality and
is easier to use than previous ICs. A shutdown feature
has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control
signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout
threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise
immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the
undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity
of the device, and providing comprehensive ESD protection on all pins.

Typical Connections
IR2153D

IR2153(S)

600V
MAX

600V
MAX

VCC

VCC

VB

HO

HO
RT

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RT

VS

CT
Shutdown

VS

CT

LO
COM

VB

Shutdown

LO
COM

IR2153(D) (S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.

Symbol

Definition

VB

High side floating supply voltage

Min.

Max.

-0.3

625
VB + 0.3

Units

VS

High side floating supply offset voltage

VB - 25

VHO

High side floating output voltage

VS - 0.3

VB + 0.3

VLO

Low side output voltage

-0.3

VCC + 0.3

VRT

RT pin voltage

-0.3

VCC + 0.3

VCT

CT pin voltage

-0.3

VCC + 0.3

ICC

Supply current (note 1)

25

IRT

RT pin current

-5

Allowable offset voltage slew rate

-50

50

dV s/dt

Maximum power dissipation @ T A +25C

PD
RthJA

Thermal resistance, junction to ambient

(8 Lead DIP)

1.0

(8 Lead SOIC)

0.625

(8 Lead DIP)

125

(8 Lead SOIC)

200
150

TJ

Junction temperature

-55

TS

Storage temperature

-55

150

TL

Lead temperature (soldering, 10 seconds)

300

mA
V/ns
W
C/W

Recommended Operating Conditions


For proper operation the device should be used within the recommended conditions.

Symbol

High side floating supply voltage

VS

Steady state high side floating supply offset voltage

Min.

Max.

VCC - 0.7

VCLAMP

-3.0 (note 2)

600
VCLAMP

Units
V

VCC

Supply voltage

10

ICC

Supply current

(note 3)

mA

TJ

Junction temperature

-40

125

Note 1:

Note 2:
Note 3:

Definition

VBs

This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown
voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the VCLAMP specified in the Electrical Characteristics section.
Care should be taken to avoid output switching conditions where the VS node flies inductively below ground by
more than 5V.
Enough current should be supplied to the VCC pin of the IC to keep the internal 15.6V zener diode clamping the
voltage at this pin.

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IR2153(D) (S)

Recommended Component Values


Symbol

Component

Min.

Max.

Units

RT

Timing resistor value

10

CT

CT pin capacitor value

330

pF

IR2153 RT vs Frequency
1000000

Frequency (Hz)

100000

330pf

10000

470pF
1nF
1000

CT Values

2.2nF
4.7nF
10nF

100

10
10

100

1000

10000

100000

1000000

RT (ohms)

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IR2153(D) (S)

Electrical Characteristics
VBIAS (VCC , VBS) = 12V, CL = 1000 pF, CT = 1 nF and TA = 25C unless otherwise specified. The VIN, VTH and IIN
parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the
respective output leads: HO or LO.

Low Voltage Supply Characteristics


Symbol Definition

Min.

Typ.

Max.

VCCUV+
VCCUVVCCUVH
IQCCUV
IQCC
VCLAMP

8.1
7.2
0.5

14.4

9.0
8.0
1.0
75
500
15.6

9.9
8.8
1.5
150
950
16.8

Min.

Typ.

Max.

0
30
4.0

10
50
5.0

VCC=VCCUV+ + 0.1V

0.5

50
1.0

A
V

VB = VS = 600V
IF = 250mA

Rising V CC undervoltage lockout threshold


Falling VCC undervoltage lockout threshold
VCC undervoltage lockout Hysteresis
Micropower startup VCC supply current
Quiescent VCC supply current
VCC zener clamp voltage

Units Test Conditions


V
A
V

VCC VCCUVICC = 5mA

Floating Supply Characteristics


Symbol Definition
IQBSUV
IQBS
VBSMIN
ILK
VF

Micropower startup VBS supply current


Quiescent VBS supply current
Minimum required VBS voltage for proper
functionality from RT to HO
Offset supply leakage current
Bootstrap diode forward voltage (IR2153D)

Units Test Conditions


A

VCC VCCUV-

Oscillator I/O Characteristics


Symbol Definition
fosc

Oscillator frequency

d
ICT
ICTUV
VCT+
VCTVCTSD
VRT+

RT pin duty cycle


CT pin current
UV-mode CT pin pulldown current
Upper CT ramp voltage threshold
Lower CT ramp voltage threshold
CT voltage shutdown threshold
High-level RT output voltage, VCC - VRT

VRT-

Low-level RT output voltage

VRTUV
VRTSD

UV-mode RT output voltage


SD-Mode RT output voltage, VCC - VRT

Min.

Typ.

Max.

19.4
94
48

0.30

1.8

20
100
50
0.001
0.70
8.0
4.0
2.1
10
100
10
100
0
10

20.6
106
52
1.0
1.2

2.4
50
300
50
300
100
50

10

300

Units Test Conditions


kHz
%
uA
mA

RT = 36.9k
RT = 7.43k
fo < 100kHz
VCC = 7V

mV

IRT = 100A
IRT = 1mA
IRT = 100A
IRT = 1mA
VCC VCCUVIRT = 100A,
VCT = 0V
IRT = 1mA,
VCT = 0V

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IR2153(D) (S)

Electrical Characteristics (cont.)


Gate Driver Output Characteristics
Symbol Definition
VOH
High level output voltage, V BIAS -VO
VOL
Low-level output voltage, VO
VOL_UV UV-mode output voltage, VO
tr
tf
tsd
td

Output rise time


Output fall time
Shutdown propogation delay
Output deadtime (HO or LO)

Min.

0.75

Typ.
0
0
0
80
45
660
1.20

Max.
100
100
100
150
100

1.65

Units Test Conditions


mV

IO = OA
IO = OA
IO = OA
VCC VCCUV-

nsec
sec

Lead Definitions
Symbol

Description

VCC
RT
CT
COM
LO
VS
HO
VB

Logic and internal gate drive supply voltage


Oscillator timing resistor input
Oscillator timing capacitor input
IC power and signal ground
Low side gate driver output
High voltage floating supply return
High side gate driver output
High side gate driver floating supply

Lead Assignments

8 Lead PDIP

8 Lead SOIC

IR2153(D)

IR2153S

NOTE: The IR2153D is offered in 8 lead PDIP only.

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IR2153(D) (S)
Functional Block Diagram for IR2153(S)
RT
VB
R

Q
HV
LEVEL
SHIFT

+
R

+
-

PULSE
FILTER

HO

PULSE
GEN

DEAD
TIME

VS

VCC

R/2

CT

15.6V

+
R/2

LOGIC

LO

DELAY

DEAD
TIME

UV
DETECT

COM

Functional Block Diagram for IR2153D


RT
VB
R

Q
HV
LEVEL
SHIFT

+
R
R
+
-

DEAD
TIME

PULSE
FILTER

PULSE
GEN

VS

D1

Q
VCC

R/2

CT

15.6V

+
R/2

HO

LOGIC

UV
DETECT

DEAD
TIME

DELAY

LO

COM

NOTE: The D1 is a separate die.

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IR2153(D) (S)

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8 Lead PDIP

01-3003 01

8 Lead SOIC

01-0021 08

IR2153(D) (S)

CLAMP

Vccuv+
Vcc
RT
RT ,C T

2/3
1/3

CT

td
LO

td
HO

Figure 1. Input/Output Timing Diagram

RT
50%

50%

(HO)

(LO)

90%

HO

10%
DT

LO

90%

10%

Figure 2. Switching Time Waveform Definitions

Figure 3. Deadtime Waveform Definitions

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
http://www.irf.com/
Data and specifications subject to change without notice. 4/6/2001

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