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BF245A/BF245B/BF245C
N-Channel Amplifiers
This device is designed for VHF/UHF amplifiers.
Sourced from process 50.
TO-92
Drain-Gate Voltage
Parameter
Value
30
Units
V
VGS
Gate-Source Voltage
-30
IGF
10
mA
PD
350
2.8
mW
mW/C
TJ, TSTG
- 55 ~ 150
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage
VDS = 0, IG = 1A
-30
VGS
-0.4
-1.6
-3.2
-2.2
-3.8
-7.5
-0.5
-8
-5
nA
Gate-Source
BF245A
BF245B
BF245C
V
V
VGS(off)
IGSS
On Characteristics
IDSS
Zero-Gate Voltage Drain Current
BF245A
BF245B
BF245C
2
6
12
6.5
15
25
mA
On Characteristics
Common Source Forward
gfs
Transconductance
6.5
mmhos
BF245A/BF245B/BF245C
Package Dimensions
TO-92
+0.25
4.58 0.20
4.58 0.15
0.10
14.47 0.40
0.46
1.27TYP
[1.27 0.20]
1.27TYP
[1.27 0.20]
0.20
(0.25)
+0.10
0.38 0.05
1.02 0.10
3.86MAX
3.60
+0.10
0.38 0.05
(R2.29)
Dimensions in Millimeters
2003 Fairchild Semiconductor Corporation
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Product Status
Definition
Advance Information
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I2