Académique Documents
Professionnel Documents
Culture Documents
Top View
TO-220F D
G
S
D S
G
AOTF4N90
Absolute Maximum Ratings TA=25C unless otherwise noted
Parameter Symbol AOTF4N90 Units
Drain-Source Voltage VDS 900 V
Gate-Source Voltage VGS 30 V
Continuous Drain TC=25C 4*
ID
Current TC=100C 2.5* A
Pulsed Drain Current C IDM 16
Avalanche Current C IAR 2.3 A
Repetitive avalanche energy C EAR 79 mJ
Single plused avalanche energy G EAS 158 mJ
Peak diode recovery dv/dt dv/dt 5 V/ns
TC=25C 37 W
PD
Power Dissipation B Derate above 25oC 0.3 W/ oC
Junction and Storage Temperature Range TJ, TSTG -55 to 150 C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds TL 300 C
Thermal Characteristics
Parameter Symbol AOTF4N90 Units
Maximum Junction-to-Ambient A,D RJA 65 C/W
Maximum Junction-to-Case RJC 3.3 C/W
* Drain current limited by maximum junction temperature.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
ID(A)
6V
3
125C
1
2 VGS=5.5V
25C
1
0 0.1
0 5 10 15 20 25 30 2 4 6 8 10
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
8 3
Normalized On-Resistance
2.5
VGS=10V
6 ID=2A
2
RDS(ON) ()
4 1.5
1
2 VGS=10V
0.5
0 0
0 2 4 6 8 10 -100 -50 0 50 100 150 200
ID (A) Temperature (C)
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage
1.2 1.0E+02
1.0E+01
1.1
BVDSS (Normalized)
40
1.0E+00
125C
IS (A)
1 1.0E-01
25C
1.0E-02
0.9
1.0E-03
0.8 1.0E-04
-100 -50 0 50 100 150 200 0.0 0.2 0.4 0.6 0.8 1.0
TJ (C) VSD (Volts)
Figure 5:Break Down vs. Junction Temperature Figure 6: Body-Diode Characteristics (Note E)
15 10000
VDS=720V
12 ID=4A Ciss
1000
Capacitance (pF)
VGS (Volts)
9
Coss
100
6
Crss
10
3
0 1
0 5 10 15 20 25 30 0.1 1 10 100
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
5 100
4 10s
Current rating ID(A)
10
RDS(ON)
limited 100s
3
ID (Amps)
1
2 1ms
DC 10ms
0.1 0.1s
1
TJ(Max)=150C
TC=25C 1s
0 0.01
0 25 50 75 100 125 150 1 10 100 1000 10000
TCASE ((C)
C) VDS (Volts)
Figure 9: Current De-rating (Note B) Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF4N90 (Note F)
10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZJC Normalized Transient
TJ,PK=TC+PDM.ZJC.RJC
Thermal Resistance
1 RJC=3.3C/W
0.1
PD
0.01 Ton
Single Pulse T
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100
Vgs
Qg
+ 10V
VDC
+ Vds Qgs Qgd
- VDC
DUT -
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
DUT
+
Vgs VDC Vdd
Rg -
10%
t on t off
Id Vds
Vgs + Vdd I AR
Vgs VDC
Rg - Id
DUT
Vgs Vgs