Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. eeeCOMPOUND FIELD EFFECT POWER TRANSISTOR uPA1556A N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION ‘The UPATSS6A is N-channel Power MOS FET Array that bullt in 4 circuits designed for solenoid, motor and lamp driver. FEATURES ¢ 4V driving is possible © Large Current and Low On-state Resistance 208 202 TYP. (Vos = 10V) 25 QTYP. (Vos = 4V) ‘© Low Capacitance Cis = 700 pF TYP. © Gate Protecter builtin. © 2.54 mm Pitch (0.1 inch ORDERING INFORMATION Part Number Package ualty Grade [PATSSEAH 10Pin SIP ‘Standard Please refer to “Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Te = 25 °C) Drain to Source Voltage Voss 100 Gate to Source Voltage (AC) Voss 420 V Gate to Source Voltage (DC) Voss +2010 V Drain Current (DC) lowe $5.0 Afunit Drain Current (pulse) loipuen* $20 Alunit Total Power Dissipation (4 circuits) Pre 2 OW Total Power Dissipation (4 circuits) Pre 35 W Storage Temperature Tre 8510 +150 °C Junction Temperature T 160°C * PWS 10 us, Duty Cycle # 1% PACKAGE DIMENSION | (in millimeters) 26.8 MAX. aq, = affe = 14 06:01 05201 PIN No. 2,468 GateiG) 3.5.7.9 Dran 0) 110 Source (S) Open 0) 9 Gare Protecter © Source (S) trent No, 1-248 Dato Publish January 194 © NEC Corporation 1994NEC HMPA1556A ELECTRICAL CHARACTERISTICS (Ta = 25°C) (CHARACTERISTIC ‘SYMBOL | MIN. | TYP. | MAX. | UNIT TEST CONDITIONS Drain Leakage Current loss to | HA_|_vos= 100, vas =0 Gate to Source Leakage Current ese HO | uA _| _Vee=220V, Vos =0 Gate to Source Cutoff Voltage Vou | 10 25 | _V_| Vora 10V,lo=1mA Forward Transfer Admittance Tvs 40 S| Ves=10V, io=3A Drain to Source On-stato Ri Fisica 020 | 025 | a | Ves=10V,b=3A Crain to Soon On-tat Fos oas_[ om [a Input Capacitance Ce 700 oF Output Capacitance co 200 oF Revers Trefer Capacanos ce 20 oF Tar-On Belay Tne oa 25 . Fie Time j % re] Yess so Tar OF Olay Tne vo 00 ns] nia Ree 190 Fall Time w 200 ns ‘See Fig. 1 Tal Gave Chase os 7 we Gate to Source Chige ase 28 ve] BoeA Gatto ran Charge oe ‘ ne | Seog? Diode Forward Vorwge Wo) %0 W [ema Verso Revere Recovery Tine we 720 Se averse Reovery Cares on 0 ne] dicta Soaie Fig. 1 Switching Time Test Circuit our welt Seals t™ Po, Gntion i I" Bury Bree 5 156 Fig. 2 Gate Charge Test Circuit Veo °6. 50a INEC TYPICAL CHARACTERISTICS (T: 3 é g r= Total Power Dissipation - W lo~ Drain Current —A = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 20 6 2 20 a0 6080 100 120 140760 Te Case Temperature —"C ‘TOTAL POWER DISSIPATION ve, AMBIENT TEMPERATURE T | 4 Circuits operation 3.Circuits operation 2 Circuits operation 1 Gieuit operation. 2807S TO) Bt ‘Te Ambient Temperature °C DRAIN CURRENT vs, DRAIN 70 SOURCE VOLTAGE waa ov | Pulsed 2s esse ortei2 \Voe~ Dian to Source Voltage ~V P1—Totel Power Dissipation - W Io= Drain Curent =A Jo~ Drain Current =A HPA1556A FORWARD BIAS SAFE OPERATING AREA 100 Te= 25°C or | Single Pulse r 10 100 Vos = Drain to Souree Vokage = V ‘TOTAL POWER DISSIPATION ve. CASE TEMPERATURE 20) 4 Grcuits operation | 3 Circus operation 2 Circuits operation 1 Gireuit operation 10 0 28 80750025180 Te Case Temperature -*C ‘TRANSFER CHARACTERISTICS. 100 10 1 Ver on Pulsed ° 2 4 6 8 \Vee~ Gate to Source Voltage -VNEC HUPA1556A ‘TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH oe “Transient Thermal Resistance ~°CIW 265C Siagie Puse | 10m 1004 1m 10m Tom 1 10 100 900 DRAIN TO SOURCE ON-STATE VOLTAGE FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON STATE ¥' BRAIN CURRENT > ae i 10 ] i = 3 \ | Pulsed 8 3 a ae z g a os 3 6 ign 25A eet g i go i : = lon tA i & Cie 3 5 | = a £9 en Ves ~ Gate to Source Vltoge -V q__ DRAIN TO SOURCE ON-STATE RESISTANCE GATE TO SOURCE CUTOFF VOLTAGE ve. & _Ve-DRAIN CORRENT CAANNEL TEMPERATURE g 08 TT 1 > 20 a { eM 2 | 3 16] ‘ 7 ° | | = oa 3 —~ 8 | | 8 12 & oat 8 ™ 8 | 8 os § 02] . § LL & 0a aes L Vos = 10¥| co Piso i b= ima ior Y 16 700 5 Mego 3100 ——*80 lo~Dran Curent Tor= Channel Temperature ~ °CNEC UPA1556A DRAIN TO SOURCE ON-STATE RESISTANCE ve. CHANNEL TEMPERATURE. foe 2 § ost +L 7 | g Bos 6 5 -— yas} : <6" 202 & | on g -0 0 30 100) 750 Tes Channe Temperature °C CAPACITANCE ve, DRAIN TO SOURCE NCEA ahead Vos = 0 f eae 8 1000 S 100 gw : 1 or 7 15 "00 Vos Din to Source Voge -V DYNAMIC INPUTIOUTPUT CHARACTERISTICS 100 ‘0 foo 8ev > 50V. 3 6 "y 2 go 6 3 «0 (\ 6 20 2 2 A\ WeobA lo ° 4 68 12 1620 (Qa ~ Gate Charge ~ nc Vos ~ Gate to Source Voltage -V BODY DIODE FORWARD VOLTAGE 100 p= < & § 0 g g0 & Tes 25°C a Pulsed ° T z a ‘Veo ~ Source to Drain Valiage—V SWITCHING TIME vs, DRAIN CURRENT 10000 E1000 = E100 2 10 Vaso = 10¥] i Revton : Moo= 50 oT 1 10 Io=Drsin Curent -A REVERSE RECOVERY TIME vs. REVERSE DRAIN CURRENT 120 2 100) E - 8 0 8 40 i i 20 “| ict = 60 Aus A Vswo 07 T 70 |i ~Diode Forward Current —ANEC UPA1556A Reference Document name Document No. Guality control of NEC semiconductors devices. TELI202 ‘Quality control guide of semiconductors devices. MEL202, “Assembly manual of semiconductors devices. Ter 1207 “Safe operating area of Power MOS FET TEATOS# ‘Appication circuit using Power MOS FET TEA 1035 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibilty for any errors which may appear in this, document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights o other intellectual property rights of NEC Corporation or others. ‘The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. if customers intend to use NEC devices for above applications or they intend to use "Standard” quality grade NEC devices for applications not intended by NEC, please contact, our sales people in advance. Application examples recommended by NEC Corporation, Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer praduets, ete. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. we 928