Académique Documents
Professionnel Documents
Culture Documents
1 Themaximumvalueofthefunctionf(x)=in(1+x)x(wherex>1)occurs
atx=_____.
dy dy
(A) + xy = e x (B) + xy = 0
dx dx
dy dy
(C) + xy = e y (D) + x y = 0
dx dx
3Matchtheapplicationtoappropriatenumericalmethod.
Application Numerical|Method
P1:Numericalintegration M1:NewtonRaphsonMethod
P2: Solution to a transcendental M2:RungeKuttaMethod
equation
P3: Solution to a system of linear M3:Simpsons1/3rule
equations
P4:Solutiontoadifferentialequation M4:GaussEliminationMethod
(A)P1M3,P2M2,P3M4,P4M1
(B)P1M3,P2M1,P3M4,P4M2
(C)P1M4,P2M1,P3M3,P4M2
(D)P1M2,P2M1,P3M3,P4M4
4 Anunbiasedcoinistossedaninfinitenumberoftimes.Theprobabilitythat
thefourthheadappearsatthetenthtossis
5 Ifz=xyln(xy),then
z z z z
(A) x + y = 0 B) y =x
x y x y
z z z z
(C) x =y D) y + x = 0
x y x y
1 t
c o
Vs = Ri (t ) + i (u )du.
Whichoneofthefollowingrepresentsthecurrenti(t)?
(A) (B)
(C) (D)
7 Inthefigureshown,thevalueofthecurrentI(inAmperes)is__________.
8. InMOSFETfabrication,thechannellengthisdefinedduringtheprocessof
(A)isolationoxidegrowth (B)channelstopimplantation
(C)polysilicongatepatterning
(D)Lithographystepleadingtothecontactpads
(A)theminoritycarriermobility
(B)theminoritycarrierrecombinationlifetime
(C)themajoritycarrierconcentration
(D
D)theexce
essminorittycarriercconcentrattion
11 T
Thedesirab
blecharactteristicsofatransconductanceeamplifierare
(A
A)highinp
putresistanceandhiighoutputresistancee
(B
B)highinp
putresistanceandlo
owoutputresistance
(C
C)lowinputresistan
nceandhigghoutputresistance
(D
D)lowinp
putresistan
nceandlow
woutputrresistance
12 In
n the circu
uit shown, the PNP
P transistor has |VBE| = 0.7 V
V and =
= 50.
A
Assumetha 0k.ForV
atRB=100 V,thevalueeofRC(inkk)is________
V0tobe5V
13 T figure shows a halfwave
The h rectifier. The
T diode D is ideal. The average
stteadystate current (in Ampeeres) thro
ough the diode is approximaately
_
__________
___.
14. A
Ananalogv
voltagein therangee0to8V isdivided in16equaalintervalssfor
conversionto4bitdiigitaloutput.Themaaximumqu nerror(in V)is
uantization
_
_________
15. T
Thecircuits
shownintthefigureiisa
(A
A)ToggleFFlipFlop (B)JKFlipFlop
(C
C)SRLatch
h (D)MaasterSlaveeDFlipFlo
op
16. C
Considerth
hemultipleexerbasedlogiccircu
uitshowninthefigurre.
W
Whichoneofthefollo
owingBoo
oleanfuncttionsisreaalizedbyth
hecircuit?
A) F = WS
(A W 1 S2 (B)F=WSS1+WS2+SS1S2
C) F = W 1 + S1 + S2
(C (D) F = W S1 S2
(A
A)5Hzand
d15Hzonly (B)10Hzand15Hzonlyy
(C
C)5Hz,10
0Hzand15
5Hzonly (D)5Hzonly
18. Foranallpasssystem
mH(z)=
(z 1
b ) ,wwhere|H(ee j
)|=1,fforall.
1
(1 az )
IffRe(a) 0
0,Im(a)0
0,thenbeq
quals
(A
A)a (B)a* (C)1/aa* (D)1/a
20. C
Considerth
hefollowingblockdiaagraminth
hefigure.
C (s)
T
Thetransfe
erfunction is
R( s)
G1G2
(A
A) (B))G1G2+G
G1+1
1 + G1G2
G1
(C
C)G1G2+G
G2+1 (D
D)
1 + G1G2
22. T
Thephaser
responseo
ofapassbaandwavefformattheereceiveriisgivenbyy
( f ) = 2
( f f c ) 2 f c
w
where fc is the centre frequenccy, and and aree positive constants.
c The
actualsignaalpropagattiondelayfromthettransmitterto
(A
A) (B)) (C) (D)
+ +
23. C
Consider an FM sign
nal f(t) = cos[2
c fc t +
+ 2 sin 2 f2 t] sin
n 2 f2 t]. The
m
maximum deviation of the instantaneous frequ m the carrier
uency from
frrequencyffcis
A)1f1+2f2
(A (B)1 f2+2f1 (C)1++2 (D)f1+f2
24. C
Consideran
nairfilledrectangulaarwaveguidewithaccrosssectiionof5cm
m3
cm. For this waveguide, the cutoff
c freq
quency (in
n MHz) off TE21 mod
de is
_
________.
25. In
nthefollowingfigure,thetran
nsmitterTxxsendsaw
wideband modulatedRF
signalviaa coaxialcaabletothe receiverR
Rx.Theouttputimped
danceZTo
ofTx,
th
hecharactteristicimp
pedanceZ0ofthecableandth
heinputim
mpedanceZZRof
R
Rxareallre
eal.
W
Whichone ofthefollowingstatementsissTRUEabo
outthedisstortionoffthe
reeceivedsiggnaldueto
oimpedancemismattch?
A)ThesignalgetsdistortedifZZRZ0,irreespectiveo
(A ofthevalueofZT
(B)ThesignalgetsdistortedifZTZ0,irrespectiveofthevalueofZR
(C)Signaldistortionimpliesimpedancemismatchatbothends:ZT Z0and
ZRZ0
27 WhichoneofthefollowingstatementsisNOTtrueforasquarematrixA?
(B) If A is real symmetric, the Eigen values of A are always real and
positive
(C) IfAisreal,theEigenvaluesofAandATarealwaysthesame
(D) IfalltheprincipalminorsofAarepositive,alltheeigenvaluesofA
arealsopositive
28. Afaircoinistossedrepeatedlytillbothheadandtailappearatleastonce.
Theaveragenumberoftossesrequiredis______.
29. Let X1, X2, and X3 be independent and identically distributed random
variableswiththeuniformdistributionon[0,1].TheprobabilityP{X1+X2
X3}is________.
30. C
Considerth
hebuildingblockcalleedNetwo
orkNshow
wninthefigure.
LetC=100FandR==10k.
T
Twosuchblocksarecconnectedincascadee,asshowninthefiggure.
V3 ( s )
T
Thetransfe
erfunction ofthecascadeednetworkis
V1 ( s )
2
s s2 s s
(A
A) (B)) (C) (D)
1+ s 1 + 3s + s 2 1+ s 2+s
31 In nthefigure,thevalu
nthecircuitshownin ueofnodevoltageV2is
(A)22+j2
2V
(B)2+j22
2V
(C)22j2
2V
(D)2j22
2V
32. In
n the circu
uit shown in the figgure, the angular
a freequency (in rad/ss), at
w
which the Norton eq n from terrminals bb' is
quivalent impedance as seen
p
purelyresis
stive,is__________.
34. T
Thedonor andaccepterimpuritiesinan abruptjun
nctionsilico
ondiodeaare1
x 1016cm3 and510
018cm3,reespectivelyy.Assume thattheintrinsiccarrier
KT
concentratiioninsilico 51010cm
onni=1.5 m3at300 K, =2
26mVand
dthe
q
p
permittivity n si=1.041012F//cm.Theb
yofsilicon builtinpottentialand
dthe
depletion width of the diod
de under thermal equilibrium conditiions,
reespectivelyy,are
(A nd1x104cm
A)0.7Van Vand1x104cm
(B)0.86V
(C
C)0.7Van 05cm
nd3.3x10 (D)0.86Vand3.3x105
cm
35 T
Theslopeo OSFETinlinearregim
oftheIDvss.VGScurveeofannchannelMO meis
103)1at VDS = 0.1
1 1 V. For the same device,
d neeglecting channel
c length
m n, the slope of the I D vs. VGSS curve (in A/V) under saturaation
modulation
reegimeisap
pproximately__________.
36 A OScapacittorhasborondopinggconcentrrationof1015cm3in
AnidealMO nthe
substrate.W
Whenagaatevoltageeisapplied,adepleetionregionofwidth
h0.5
is form
m med with a surface (cchannel) potential
p o 0.2 V. Given
of G that 0 =
8
8.854 014 F/cm and the relative
x 10 r peermittivitiees of silico
on and sillicon
dioxide are
e 12 and 4,
4 respectivvely, the peak
p electrric field (in
n V/m) in
n the
o
oxideregionis__________.
37. In
n the circu
uit shown,, the silico
on BJT hass = 50. Assume
A VBE
B = 0.7 V and
VCE(sat)=0.2
2V.Whichoneoftheefollowinggstatemen
ntsiscorrecct?
(A =1k,theeBJToperaatesinthesaturation
A)ForRC= nregion
(B =3k,theeBJToperaatesinthesaturation
B)ForRC= nregion
(C =20k,theeBJToperratesintheecutoffreegion
C)ForRC=
(D =20k,theBJToperratesintheelinearreggion
D)ForRC=
38. AssumingthattheOp
A pampinth
hecircuitsshownisid
deal,Voisggivenby
5 5
A) V1 3V2
(A (B) 2V1 V2
2 2
3 7 11
C) V1 + V2
(C (D) 3V1 + V2
2 2 2
39 FortheMO
OSFETM1sshowninth W/L=2,VDDD=2.0V,nCox
hefigure,aassumeW
= V2 and VTH = 0.5 V. The
= 100 A/V T transistor M1 switches frrom saturaation
reegiontolin nwhenVinn(inVolts)is___________.
nearregion
40. IffWListheWordLineeandBLth
heBitLine,,anSRAMcellisshownin
(A
A) (B)
(C
C) (D)
41. In WandYarreMSBsoffthecontrrolinputs.TTheoutputF
nthecircuitshown,W
issgivenby
(A) F = WX + WX + YZ (B) F = WX + WX + YZ
42. IfXandYareinputsandtheDifference(D=XY)andtheBorrow(B)are
the outputs, which one of the following diagrams implements a half
subtractor?
(A) (B)
(C) (D)
43. LetH1(z)=1pz1)1,H2(z)=1qz1)1,H(z)=H1(z)+rH2(z).Thequantities
p,q,rarerealnumbers.Considerp=1/2,q=1|r|<1.Ifthezeroof
H(Z)liesontheunitcircle,thenr=______
S1:Thesysttemisstab
ble.
h ( t + 1)
S2: isindepen
ndentoft fort>0.
h(t )
S3:Anoncausalsysteemwithth
hesametraansferfuncctionisstaable.
Fortheabo
ovesystem
m,
A)onlyS1andS2areetrue(B)onlySS2andS3aaretrue
(A
(C
C)onlyS1andS3areetrue(D)S1,S2
2andS3arretrue
1
45. T
Theztransformofth
hesequenccex[n]isggivenbyX[z]= ,with
hthe
(1 2zz )
2
1
onvergencee|z|>2.TThen,x[2]is_________
reegionofco
46. T
Thestateequationoffasecondorderlinearsystemisgivenbyy
47. T
Thestateequationoffasecondorderlinearsystemisgivenbyy
x(t)=Axx(t),x(0))=x0
Forx0= 11 , x (t ) = e t and for x0 = 10 , x (t ) e t e 2t
t t 2 t
[ e ] e + 2 e
W
When x0 = 35 , x(t ) iss
C) 3e t 5e 2t (D) 5e t 3e 2t
t 2 t t 2 t
(C
3e +10 e 5e 6 e
48. In
n the roott locus plo
ot shown in the figu
ure, the pole/zero marks
m and the
arrowshavvebeenremoved.W
Whichoneo
ofthefollo
owingtran
nsferfuncttions
h
hasthisroo
otlocus?
s +1 s+4
(A
A) (B)
( s + 2)( s + 4)( s + 7)
7 ( s + 1)( s + 2)( s + 7)
s+7 ( s + 1))( s + 2)
(C
C) (D)
( s + 7)( s + 2)( s + 4)
4 ( s + 7))( s + 4)
1 f 1 f
(C
C) sy ( f ) = S X (D) s y ( f ) = S X e j 2 f
2 2 2 2
w
wherefisthefrequen ulatesacarrier
ncyexpresssedinHz.ThesignallX(t)modu
cos16000 tandtheeresultantsignalisp dealbandpass
passedthroughanid
widthof2 kHz.
fiilterofunitygainwitthcentreffrequency of8kHzaandbandw
T
Theoutputpower(inWatts)is________.
51. In 0077t)+ccos(100t))}Vissampled
naPCMsyystem,thesignalm(tt)={sin(10
uistrate.TThesampleesareproccessedbyaauniformquantizerwith
attheNyqu
m data ratte of the PCM systeem in bits per
sttep size 0.75 V. Thee minimum
seecondis__
____.
T
Thevalueo
ofH(Y1)+H
H(Y2)inbitssis___________________
unitvectorsalongx, ydirections,respectively.Theemagnitud
deofcurl ofA
iss________
_
54. Aregionshownbelow
A wcontainsaperfectconductinghalfspacceandair.The
surface currrent K s on
o the surrface of the
t perfecct conducttor is K s = x 2
amperespe
ermeter.TThetangen
ntial H fieeldintheaairjustabo
ovetheperrfect
conductoriis
A) ( x + z ) 2 Ampeeres per
(A
m
meter
((B) x 2 Amp
peresperm
meter
C) z 2 Amperespermeter
(C
(D
D) z 2 Amperesperm
meter
55. A
Assume that
t a plane wave
w in air witth an electric
e field
KeyforExercise3
Q.No. Key 29 0.15to0.18
1 0.01to0.01 30 B
2 A 31 D
3 B 32 1.9to2.1
4 C 33 9to11
5 C 34 D
6 A 35 0.06to0.08
7 0.49to0.51 36 2.3to2.5
8 C 37 B
9 D 38 D
10 12.9to13.1 39 1.4to1.6
11 A 40 B
12 1.04to1.12 41 C
13 0.08to0.12 42 A
14 0.24to0.26 43 0.6to0.4
15 D 44 A
16 D 45 11.9to12.1
17 A 46 0.49to0.51
18 B 47 B
19 9.5to10.5 48 B
20 C 49 C
21 0.01to0.01 50 2.4to2.6
22 C 51 199to201
23 A 52 1.9to2.1
24 7750to7850 53 0.01to0.01
25 C 54 D
26 5.9to6.1 55 29to31
27 B
28 2.9to3.1