Académique Documents
Professionnel Documents
Culture Documents
+3.3 or 5 V
1
4 VCC
IP+ CBYP
ACS758 0.1 F
2
IP GND
CF
5
IP 3
VIOUT VOUT
RF
Application 1: The ACS758 outputs an analog signal, VOUT,
that varies linearly with the uni- or bi-directional AC or DC
primary sampled current, IP, within the range specified. CF is
for optimal noise management, with values that depend on
the application.
Typical Application
ACS758-DS, Rev. 9
Thermally Enhanced, Fully Integrated, Hall Effect-Based
ACS758xCB Linear Current Sensor IC with 100 Current Conductor
Selection Guide
Package Primary Sampled Sensitivity
Sens (Typ.) Current TOP
Part Number1 Current , IP Packing2
Terminals Signal Pins Directionality (C)
(A) (mV/A)
ACS758LCB-050B-PFF-T Formed Formed 50 40. Bidirectional
ACS758LCB-050U-PFF-T Formed Formed 50 60. Unidirectional
ACS758LCB-100B-PFF-T Formed Formed 100 20. Bidirectional 40 to 150
ACS758LCB-100B-PSF-T Straight Formed 100 20. Bidirectional
ACS758LCB-100U-PFF-T Formed Formed 100 40. Unidirectional
ACS758KCB-150B-PFF-T Formed Formed 150 13.3 Bidirectional 34 pieces
ACS758KCB-150B-PSS-T Straight Straight 150 13.3 Bidirectional 40 to 125 per tube
ACS758KCB-150U-PFF-T Formed Formed 150 26.7 Unidirectional
ACS758ECB-200B-PFF-T Formed Formed 200 10. Bidirectional
ACS758ECB-200B-PSF-T Straight Formed 200 10. Bidirectional
40 to 85
ACS758ECB-200B-PSS-T Straight Straight 200 10. Bidirectional
ACS758ECB-200U-PFF-T Formed Formed 200 20. Unidirectional
1Additional leadform options available for qualified volumes.
2Contact Allegro for additional packing options.
SPECIFICATIONS
Isolation Characteristics
Characteristic Symbol Notes Rating Unit
Agency type-tested for 60 seconds per
Dielectric Strength Test Voltage* VISO 4800 VAC
UL standard 60950-1, 2nd Edition
For basic (single) isolation per UL standard 60950-1, 2nd 990 VDC or Vpk
Working Voltage for Basic Isolation VWFSI
Edition 700 Vrms
For reinforced (double) isolation per UL standard 60950- 636 VDC or Vpk
Working Voltage for Reinforced Isolation VWFRI
1, 2nd Edition 450 Vrms
* Allegro does not conduct 60-second testing. It is done only during the UL certification process.
+3.3 to 5 V
IP+ VCC
To all subcircuits
Dynamic Offset
Cancellation
VIOUT
Filter
Amp Out
0.1 F
Gain Offset
Gain Temperature Offset Temperature
Coefficient Coefficient
Trim Control
IP GND
COMMON OPERATING CHARACTERISTICS1 valid at TOP = 40C to 150C and VCC = 5 V, unless otherwise
specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Supply Voltage2 VCC 3 5.0 5.5 V
Supply Current ICC Output open 10 13.5 mA
Power-On Delay tPOD TA = 25C 10 s
IP step = 60% of IP+, 10% to 90% rise time, TA = 25C,
Rise Time3 tr 3 s
COUT = 0.47 nF
Propagation Delay Time3 tPROP TA = 25C, COUT = 0.47 nF 1 s
Response Time tRESPONSE Measured as sum of tPROP and tr 4 s
Internal Bandwidth4 BWi 3 dB; TA = 25C, COUT = 0.47 nF 120 kHz
Output Load Resistance RLOAD(MIN) VIOUT to GND 4.7 k
Output Load Capacitance CLOAD(MAX) VIOUT to GND 10 nF
Primary Conductor Resistance RPRIMARY TA = 25C 100
Symmetry3 ESYM Over half-scale of Ip 99 100 101 %
VIOUT(QBI) Bidirectional variant, IP = 0 A, TA = 25C VCC/2 V
Quiescent Output Voltage5 Unidirectional variant, IP = 0 A, TA = 25C, VIOUT(QUNI) is
VIOUT(QUNI) 0.6 V
ratiometric to VCC
Ratiometry3 VRAT VCC = 4.5 to 5.5 V 100 %
1Device is factory-trimmed at 5 V, for optimal accuracy.
2Devices are programmed for maximum accuracy at 5.0 V V
CC levels. The device contains ratiometry circuits that accurately alter the 0 A Output Voltage and Sensitivity
level of the device in proportion to the applied VCC level. However, as a result of minor nonlinearities in the ratiometry circuit additional output error will result when VCC
varies from the 5 V VCC level. Customers that plan to operate the device from a 3.3 V regulated supply should contact their local Allegro sales representative regarding
expected device accuracy levels under these bias conditions.
3See Characteristic Definitions section of this datasheet.
4Calculated using the formula BW = 0.35 / t .
i r
5V
IOUT(Q) may drift over the lifetime of the device by as much as 25 mV.
X050B PERFORMANCE CHARACTERISTICS1: TOP = 40C to 150C, VCC= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP 50 50 A
SensTA Full scale of IP applied for 5 ms, TA = 25C 40 mV/A
Sensitivity Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25C to 150C 39.4 mV/A
Sens(TOP)LT Full scale of IP applied for 5 ms,TOP = 40C to 25C 41 mV/A
Noise2 VNOISE TA= 25C, 10 nF on VIOUT pin to GND 10 mV
Nonlinearity ELIN Up to full scale of IP, IP applied for 5 ms 1 1 %
VOE(TA) IP = 0 A, TA = 25C 5 mV
Electrical Offset Voltage3 VOE(TOP)HT IP = 0 A, TOP = 25C to 150C 15 mV
VOE(TOP)LT IP = 0 A, TOP = 40C to 25C 35 mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25C, after excursion of 50 A 100 mA
ETOT(HT) Over full scale of IP, IP applied for 5 ms, TOP = 25C to 150C 1.2 %
Total Output Error4
ETOT(LT) Over full scale of IP, IP applied for 5 ms, TOP = 40C to 25C 2 %
1See Characteristic Performance Data page for parameter distributions over temperature range.
23 sigma noise voltage.
3V
OE(TOP) drift is referred to ideal VIOUT(Q) = 2.5 V.
4Percentage of I . Output filtered.
P
X050U PERFORMANCE CHARACTERISTICS1: TOP = 40C to 150C, VCC= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP 0 50 A
SensTA Full scale of IP applied for 5 ms, TA = 25C 60 mV/A
Sensitivity Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25C to 150C 59 mV/A
Sens(TOP)LT Full scale of IP applied for 5 ms,TOP = 40C to 25C 61 mV/A
Noise2 VNOISE TA= 25C, 10 nF on VIOUT pin to GND 15 mV
Nonlinearity ELIN Up to full scale of IP, IP applied for 5 ms 1 1 %
VOE(TA) IP = 0 A, TA = 25C 5 mV
Electrical Offset Voltage3 VOE(TOP)HT IP = 0 A, TOP = 25C to 150C 20 mV
VOE(TOP)LT IP = 0 A, TOP = 40C to 25C 40 mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25C, after excursion of 50 A 100 mA
ETOT(HT) Over full scale of IP, IP applied for 5 ms, TOP = 25C to 150C 1.2 %
Total Output Error4
ETOT(LT) Over full scale of IP, IP applied for 5 ms, TOP = 40C to 25C 2 %
1See Characteristic Performance Data page for parameter distributions over temperature range.
23 sigma noise voltage.
3V
OE(TOP) drift is referred to ideal VIOUT(Q) = 0.6 V.
4Percentage of I . Output filtered.
P
X100B PERFORMANCE CHARACTERISTICS1: TOP = 40C to 150C, VCC= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP 100 100 A
SensTA Full scale of IP applied for 5 ms, TA = 25C 20 mV/A
Sensitivity Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25C to 150C 19.75 mV/A
Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = 40C to 25C 20.5 mV/A
Noise2 VNOISE TA= 25C, 10 nF on VIOUT pin to GND 6 mV
Nonlinearity ELIN Up to full scale of IP, IP applied for 5 ms 1.25 1.25 %
VOE(TA) IP = 0 A, TA = 25C 5 mV
Electrical Offset Voltage3 VOE(TOP)HT IP = 0 A, TOP = 25C to 150C 20 mV
VOE(TOP)LT IP = 0 A, TOP = 40C to 25C 20 mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25C, after excursion of 100 A 150 mA
ETOT(HT) Over full scale of IP, IP applied for 5 ms, TOP = 25C to 150C 1.3 %
Total Output Error4
ETOT(LT) Over full scale of IP, IP applied for 5 ms, TOP = 40C to 25C 2.4 %
1See Characteristic Performance Data page for parameter distributions over temperature range.
23 sigma noise voltage.
3V
OE(TOP) drift is referred to ideal VIOUT(Q) = 2.5 V.
4Percentage of I . Output filtered.
P
X100U PERFORMANCE CHARACTERISTICS1: TOP = 40C to 150C, VCC= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP 0 100 A
SensTA Full scale of IP applied for 5 ms, TA = 25C 40 mV/A
Sensitivity Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25C to 150C 39.5 mV/A
Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = 40C to 25C 41 mV/A
Noise2 VNOISE TA= 25C, 10 nF on VIOUT pin to GND 12 mV
Nonlinearity ELIN Up to full scale of IP, IP applied for 5 ms 1.25 1.25 %
VOE(TA) IP = 0 A, TA = 25C 5 mV
Electrical Offset Voltage3 VOE(TOP)HT IP = 0 A, TOP = 25C to 150C 20 mV
VOE(TOP)LT IP = 0 A, TOP = 40C to 25C 20 mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25C, after excursion of 100 A 150 mA
ETOT(HT) Over full scale of IP, IP applied for 5 ms, TOP = 25C to 150C 1.3 %
Total Output Error4
ETOT(LT) Over full scale of IP, IP applied for 5 ms, TOP = 40C to 25C 2.4 %
1See Characteristic Performance Data page for parameter distributions over temperature range.
23 sigma noise voltage.
3V
OE(TOP) drift is referred to ideal VIOUT(Q) = 0.6 V.
4Percentage of I . Output filtered.
P
X150B PERFORMANCE CHARACTERISTICS1: TOP = 40C to 125C, VCC= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP 150 150 A
SensTA Full scale of IP applied for 5 ms, TA = 25C 13.3 mV/A
Sensitivity Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25C to 125C 13.1 mV/A
Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = 40C to 25C 13.5 mV/A
Noise2 VNOISE TA= 25C, 10 nF on VIOUT pin to GND 4 mV
Nonlinearity ELIN Up to full scale of IP, IP applied for 5 ms 1 1 %
VOE(TA) IP = 0 A, TA = 25C 5 mV
Electrical Offset Voltage3 VOE(TOP)HT IP = 0 A, TOP = 25C to 125C 14 mV
VOE(TOP)LT IP = 0 A, TOP = 40C to 25C 24 mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25C, after excursion of 150 A 205 mA
ETOT(HT) Over full scale of IP, IP applied for 5 ms, TOP = 25C to 125C 1.8 %
Total Output Error4
ETOT(LT) Over full scale of IP, IP applied for 5 ms, TOP = 40C to 25C 1.6 %
1See Characteristic Performance Data page for parameter distributions over temperature range.
23 sigma noise voltage.
3V
OE(TOP) drift is referred to ideal VIOUT(Q) = 2.5 V.
4Percentage of I . Output filtered.
P
X150U PERFORMANCE CHARACTERISTICS1: TOP = 40C to 125C, VCC= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP 0 150 A
SensTA Full scale of IP applied for 5 ms, TA = 25C 26.6 mV/A
Sensitivity Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25C to 125C 26.6 mV/A
Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = 40C to 25C 27.4 mV/A
Noise2 VNOISE TA= 25C, 10 nF on VIOUT pin to GND 8 mV
Nonlinearity ELIN Up to full scale of IP, IP applied for 5 ms 1 1 %
VOE(TA) IP = 0 A, TA = 25C 5 mV
Electrical Offset Voltage3 VOE(TOP)HT IP = 0 A, TOP = 25C to 125C 14 mV
VOE(TOP)LT IP = 0 A, TOP = 40C to 25C 24 mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25C, after excursion of 150 A 205 mA
ETOT(HT) Over full scale of IP, IP applied for 5 ms, TOP = 25C to 125C 1.8 %
Total Output Error4
ETOT(LT) Over full scale of IP, IP applied for 5 ms, TOP = 40C to 25C 1.6 %
1See Characteristic Performance Data page for parameter distributions over temperature range.
23 sigma noise voltage.
3V
OE(TOP) drift is referred to ideal VIOUT(Q) = 0.6 V.
4Percentage of I . Output filtered.
P
X200B PERFORMANCE CHARACTERISTICS1: TOP = 40C to 85C, VCC= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP 200 200 A
SensTA Full scale of IP applied for 5 ms, TA = 25C 10 mV/A
Sensitivity Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25C to 85C 9.88 mV/A
Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = 40C to 25C 10.13 mV/A
Noise2 VNOISE TA= 25C, 10 nF on VIOUT pin to GND 3 mV
Nonlinearity ELIN Up to full scale of IP, IP applied for 5 ms 1 1 %
VOE(TA) IP = 0 A, TA = 25C 5 mV
Electrical Offset Voltage3 VOE(TOP)HT IP = 0 A, TOP = 25C to 85C 15 mV
VOE(TOP)LT IP = 0 A, TOP = 40C to 25C 25 mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25C, after excursion of 200 A 230 mA
ETOT(HT) Over full scale of IP, IP applied for 5 ms, TOP = 25C to 85C 1.2 %
Total Output Error4
ETOT(LT) Over full scale of IP, IP applied for 5 ms, TOP = 40C to 25C 1.2 %
1See Characteristic Performance Data page for parameter distributions over temperature range.
23 sigma noise voltage.
3V
OE(TOP) drift is referred to ideal VIOUT(Q) = 2.5 V.
4Percentage of I . Output filtered.
P
X200U PERFORMANCE CHARACTERISTICS1: TOP = 40C to 85C, VCC= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP 0 200 A
SensTA Full scale of IP applied for 5 ms, TA = 25C 20 mV/A
Sensitivity Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25C to 85C 19.7 mV/A
Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = 40C to 25C 20.3 mV/A
Noise2 VNOISE TA= 25C, 10 nF on VIOUT pin to GND 6 mV
Nonlinearity ELIN Up to full scale of IP, IP applied for 5 ms 1 1 %
VOE(TA) IP = 0 A, TA = 25C 5 mV
Electrical Offset Voltage3 VOE(TOP)HT IP = 0 A, TOP = 25C to 85C 20 mV
VOE(TOP)LT IP = 0 A, TOP = 40C to 25C 35 mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25C, after excursion of 200 A 230 mA
ETOT(HT) Over full scale of IP, IP applied for 5 ms, TOP = 25C to 85C 1.2 %
Total Output Error4
ETOT(LT) Over full scale of IP, IP applied for 5 ms, TOP = 40C to 25C 1.2 %
1See Characteristic Performance Data page for parameter distributions over temperature range.
23 sigma noise voltage.
3V
OE(TOP) drift is referred to ideal VIOUT(Q) = 0.6 V.
4Percentage of I . Output filtered.
P
Accuracy Data
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
30 42.0
20 42.5
10
Sens (mV/A)
41.0
0
VOE (mV)
40.5
-10
40.0
-20
39.5
-30
-40 39.0
-50 38.5
50 -25 0 25 50 75 100 125 150 50 -25 0 25 50 75 100 125 150
TA (C) TA (C)
0.25 100.20
0.20 100.15
0.15 100.10
0.10 100.05
0.05 100.00
0 99.95
50 -25 0 25 50 75 100 125 150 50 -25 0 25 50 75 100 125 150
TA (C) TA (C)
Magnetic Offset Error versus Ambient Temperature Total Output Error versus Ambient Temperature
140 6
5
120
4
100 3
2
IERROM (mA)
80
ETOT (%)
1
60 0
40 -1
-2
20
-3
0 -4
50 -25 0 25 50 75 100 125 150 50 -25 0 25 50 75 100 125 150
TA (C) TA (C)
Accuracy Data
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
25 21.2
20 21.0
15 20.8
Sens (mV/A)
10 20.6
VOE (mV)
5 20.4
0 20.2
-5 20.0
-10 19.8
-15 19.6
-20 19.4
-25 19.2
50 -25 0 25 50 75 100 125 150 50 -25 0 25 50 75 100 125 150
TA (C) TA (C)
0.30 100.4
100.3
0.25
ESYM (%)
ELIN (%)
100.2
0.20
100.1
0.15
100.0
0.10 99.9
0.05 99.8
0 99.7
50 -25 0 25 50 75 100 125 150 50 -25 0 25 50 75 100 125 150
TA (C) TA (C)
Magnetic Offset Error versus Ambient Temperature Total Output Error versus Ambient Temperature
200 6
190 5
4
180
3
170 2
IERROM (mA)
160 1
ETOT (%)
150 0
130 -1
-2
120
-3
110 -4
100 -5
50 -25 0 25 50 75 100 125 150 50 -25 0 25 50 75 100 125 150
TA (C) TA (C)
Accuracy Data
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
20 14.0
15
13.8
10
Sens (mV/A)
5 13.6
VOE (mV)
0 13.4
-5
-10 13.2
-15 13.0
-20
12.8
-25
-30 12.6
60 40 20 0 20 40 60 80 100 120 140 60 40 20 0 20 40 60 80 100 120 140
TA (C) TA (C)
100.3
0.15
100.2
0.10 100.1
100.0
0.05
99.9
0 99.8
60 40 20 0 20 40 60 80 100 120 140 60 40 20 0 20 40 60 80 100 120 140
TA (C) TA (C)
Magnetic Offset Error versus Ambient Temperature Total Output Error versus Ambient Temperature
300 5
4
250 3
2
200
1
IERROM (mA)
0
ETOT (%)
150
-1
100 -2
-3
50 -4
-5
0 -6
60 40 20 0 20 40 60 80 100 120 140 60 40 20 0 20 40 60 80 100 120 140
TA (C) TA (C)
Accuracy Data
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
25 10.4
20 10.3
15
10.2
Sens (mV/A)
10
10.1
5
VOE (mV)
0 10.0
-5 9.9
-10 9.8
-15
9.7
-20
-25 9.6
-30 9.5
60 40 20 0 20 40 60 80 100 120 140 60 40 20 0 20 40 60 80 100 120 140
TA (C) TA (C)
0.06
100.2
0.04
0.02 100.0
0
-0.02 99.8
-0.04
-0.06 99.6
60 40 20 0 20 40 60 80 100 120 140 60 40 20 0 20 40 60 80 100 120 140
TA (C) TA (C)
Magnetic Offset Error versus Ambient Temperature Total Output Error versus Ambient Temperature
350 4
3
300
2
250 1
0
IERROM (mA)
200
ETOT (%)
-1
150 -2
100 -3
-4
50
-5
0 -6
60 40 20 0 20 40 60 80 100 120 140 60 40 20 0 20 40 60 80 100 120 140
TA (C) TA (C)
Timing Data
2.988 s 997 ns
t (2 s/div.) t (2 s/div.)
VCC
IP (20 A/div.)
VIOUT (1 V/div.)
(IP = 60 A DC)
3.960 s
t (2 s/div.) t (2 s/div.)
CHARACTERISTIC DEFINITIONS
by the sensitivity (mV/A) provides the smallest current that the Quiescent output voltage (VIOUT(Q)). Quiescent output voltage
device is able to resolve. (VIOUT(Q)). The output of the device when the primary current is
zero. For bidirectional devices, it nominally remains at VCC2.
Nonlinearity (ELIN). The degree to which the voltage output Thus, VCC = 5 V translates into VIOUT(QBI) = 2.5V. For unidirec-
from the IC varies in direct proportion to the primary current tional devices, it nominally remains at 0.12 VCC. Thus, VCC
through its half-scale amplitude. Nonlinearity in the output can be =5V translates into VIOUT(QUNI) = 0.6V. Variation in VIOUT(Q)
attributed to the saturation of the flux concentrator approaching can be attributed to the resolution of the Allegro linear IC quies-
cent voltage trim, magnetic hysteresis, and thermal drift.
the half-scale current. The following equation is used to derive
the linearity: Electrical offset voltage (VOE). The deviation of the device out-
put from its ideal quiescent value of VCC 2 for bidirectional and
{ [
100 1
gain % sat ( VIOUT_half-scale amperes VIOUT(Q) )
2 (VIOUT_quarter-scale amperes VIOUT(Q) ) [{ 0.1 VCC for unidirectional devices, due to nonmagnetic causes.
Magnetic offset error (IERROM). The magnetic offset is due to
where the residual magnetism (remnant field) of the core material. The
magnetic offset error is highest when the magnetic circuit has
gain = the gain variation as a function of temperature changes been saturated, usually when the device has been subjected to a
from 25C, full-scale or high-current overload condition. The magnetic offset
% sat = the percentage of saturation of the flux concentra- is largely dependent on the material used as a flux concentrator.
tor, which becomes significant as the current being sampled The larger magnetic offsets are observed at the lower operating
temperatures.
approaches half-scale IP , and
VIOUT_half-scale amperes = the output voltage (V) when the sampled Total Output Error (ETOT). The maximum deviation of the
current approximates half-scale IP . actual output from its ideal value, also referred to as accuracy,
illustrated graphically in the output voltage versus current chart
Symmetry (ESYM). The degree to which the absolute voltage on the following page.
output from the IC varies in proportion to either a positive or ETOT is divided into four areas:
negative half-scale primary current. The following equation is
0 A at 25C. Accuracy at the zero current flow at 25C,
used to derive symmetry: without the effects of temperature.
VIOUT_+ half-scale amperes VIOUT(Q) 0 A over temperature. Accuracy at the zero current flow
100 including temperature effects.
VIOUT(Q) VIOUT_half-scale amperes
Half-scale current at 25C. Accuracy at the the half-scale
Ratiometry. The device features a ratiometric output. This current at 25C, without the effects of temperature.
means that the quiescent voltage output, VIOUTQ, and the mag- Half-scale current over temperature. Accuracy at the half-
netic sensitivity, Sens, are proportional to the supply voltage, VCC. scale current flow including temperature effects.
90 Accuracy
25C Only
Bidirectional
Average
Transducer Output VIOUT
10
0 Accuracy
t Over Temp erature
Rise Time, tr
Accuracy
Propagation delay (tPROP). The time required for the device IP(min)
25C Only
Unidirectional
Average
VIOUT
Accuracy
Over Temp erature
Accuracy
25C Only
Full Scale
0A IP(max)
Decreasing VIOUT(V)
Regulator
Clock/Logic
Low-Pass
Hall Element
Filter
Sample and
Anti-aliasing
Hold
Filter
Amp
5 4
0.5 B
3 4
17.5 0.2
21.4
13.00 0.10
Branded
Face
4.40 0.10
0.8
NNNNNNN
7.00 0.10 TTT-AAA
LLLLLLL
A Dambar removal intrusion
B Perimeter through-holes recommended YYWW
14.0 0.2
4.0 0.2
3.0 0.2
0.8
5 4 1.5
1.50 0.10
1.91
23.50 0.5
NNNNNNN
TTT-AAA
13.00 0.10
7.00 0.10
A Dambar removal intrusion
B Branding scale and appearance at supplier discretion
14.0 0.2
4.0 0.2
3.0 0.2
5 4
1.50 0.10
2.75 0.10
A NNNNNNN
TTT-AAA
23.50 0.5
LLLLLLL
13.00 0.10
YYWW
10.00 0.10
7.00 0.10
A Dambar removal intrusion
B Branding scale and appearance at supplier discretion
Revision History
Revision Revision Date Description of Revision
8 January 17, 2014 Update features list and product offering
9 April 7, 2015 Updated TUV certification and refomratted document
www.allegromicro.com