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IRF520NPbF
HEXFET Power MOSFET
Advanced Process Technology
Dynamic dv/dt Rating D
175C Operating Temperature VDSS = 100V
Fast Switching
Fully Avalanche Rated RDS(on) = 0.20
Lead-Free G
Description ID = 9.7A
Fifth Generation HEXFETs from International Rectifier S
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 3.1
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62
11/5/03
IRF520NPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 0.20 VGS = 10V, ID = 5.7A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250A
gfs Forward Transconductance 2.7 S VDS = 50V, ID = 5.7A
25 VDS = 100V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 80V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
Qg Total Gate Charge 25 ID = 5.7A
Qgs Gate-to-Source Charge 4.8 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge 11 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 4.5 VDD = 50V
tr Rise Time 23 ID = 5.7A
ns
td(off) Turn-Off Delay Time 32 RG = 22
tf Fall Time 23 RD = 8.6, See Fig. 10
Between lead, D
LD Internal Drain Inductance 4.5
6mm (0.25in.)
nH
from package G
9.7
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
38
(Body Diode) p-n junction diode. S
Notes:
Repetitive rating; pulse width limited by ISD 5.7A, di/dt 240A/s, VDD V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ 175C
VDD = 25V, starting TJ = 25C, L = 4.7mH Pulse width 300s; duty cycle 2%.
RG = 25, IAS = 5.7A. (See Figure 12)
IRF520NPbF
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
10 10
4.5V
D
D
4.5V
20s PULSE WIDTH 20s PULSE WIDTH
TC = 25C TC = 175C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)
100 3.0
I D = 9.5A
R DS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)
2.5
2.0
TJ = 25C
(Normalized)
TJ = 175C
10 1.5
1.0
0.5
V DS= 50V
20s PULSE WIDTH VGS = 10V
1 0.0 A
A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
600 20
V GS = 0V, f = 1MHz I D = 5.7A
C iss = Cgs + C gd , Cds SHORTED VDS = 80V
C rss = C gd VDS = 50V
400
12
300 Coss
8
200
Crss
4
100
100 100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
ISD , Reverse Drain Current (A)
10s
I D , Drain Current (A)
10
TJ = 175C 100s
10
TJ = 25C
1ms
1
10ms
TC = 25C
TJ = 175C
VGS = 0V Single Pulse
1 A 0.1 A
0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000
VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)
10V
Pulse Width 1 s
6.0
Duty Factor 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
VDS
90%
2.0
0.0
25 50 75 100 125 150 175 10%
TC , Case Temperature ( C) VGS
td(on) tr t d(off) tf
10
Thermal Response (Z thJC )
D = 0.50
1
0.20
0.10
0.05
0.02 SINGLE PULSE PDM
0.01 (THERMAL RESPONSE)
0.1
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
L
VDS 200
ID
10 V IAS
120
tp
0.01
V(BR)DSS
40
tp
VDD
VDD = 25V
0 A
25 50 75 100 125 150 175
VDS Starting TJ , Junction Temperature (C)
Current Regulator
Same Type as D.U.T.
50K
QG 12V .2F
.3F
10 V +
QGS QGD V
D.U.T. - DS
VGS
VG
3mA
Charge IG ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
IRF520NPbF
+
- +
-
RG dv/dt controlled by RG +
Driver same type as D.U.T. VDD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VGS=10V *
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple 5% ISD
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/