Philips Semiconductors Product specification

Triacs BT136F series

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated triacs in a full pack SYMBOL PARAMETER MAX. MAX. MAX. UNIT
plastic envelope, intended for use in
applications requiring high BT136F- 500 600 800
bidirectional transient and blocking BT136F- 500F 600F 800F
voltage capability and high thermal BT136F- 500G 600G 800G
cycling performance. Typical VDRM Repetitive peak off-state 500 600 800 V
applications include motor control, voltages
industrial and domestic lighting, IT(RMS) RMS on-state current 4 4 4 A
heating and static switching. ITSM Non-repetitive peak on-state 25 25 25 A
current

PINNING - SOT186 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION
case
1 main terminal 1
T2 T1
2 main terminal 2
3 gate
1 2 3 G
case isolated

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
VDRM Repetitive peak off-state - 5001 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; Ths 92 C - 4 A
ITSM Non-repetitive peak full sine wave; Tj = 125 C prior
on-state current to surge; with reapplied VDRM(max)
t = 20 ms - 25 A
t = 16.7 ms - 27 A
I2t I2t for fusing t = 10 ms - 3.1 A2s
dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/s
triggering T2+ G+ - 50 A/s
T2+ G- - 50 A/s
T2- G- - 50 A/s
T2- G+ - 10 A/s
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 C
Tj Operating junction - 125 C
temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/s.

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Philips Semiconductors Product specification

Triacs BT136F series

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol Repetitive peak voltage from all R.H. 65% ; clean and dustfree - 1500 V
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz - 12 - pF
heatsink

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-hs Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 5.5 K/W
without heatsink compound - - 7.2 K/W
Rth j-a Thermal resistance in free air - 55 - K/W
junction to ambient

STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT136F- ... ...F ...G
IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 5 35 25 50 mA
T2+ G- - 8 35 25 50 mA
T2- G- - 11 35 25 50 mA
T2- G+ - 30 70 70 100 mA
IL Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 7 20 20 30 mA
T2+ G- - 16 30 30 45 mA
T2- G- - 5 20 20 30 mA
T2- G+ - 7 30 30 45 mA
IH Holding current VD = 12 V; IGT = 0.1 A - 5 15 15 30 mA
VT On-state voltage IT = 5 A - 1.4 1.70 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 C
ID Off-state leakage current VD = VDRM(max); - 0.1 0.5 mA
Tj = 125 C

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Philips Semiconductors Product specification

Triacs BT136F series

DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT136F- ... ...F ...G
dVD/dt Critical rate of rise of VDM = 67% VDRM(max)V; 100 50 200 250 - V/s
off-state voltage Tj = 125 C; exponential
waveform; gate open
circuit
dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 C; - - 10 50 - V/s
commutating voltage IT(RMS) = 4 A;
dIcom/dt = 1.8 A/ms; gate
open circuit
tgt Gate controlled turn-on ITM = 6 A; VD = VDRM(max); - - - 2 - s
time IG = 0.1 A; dIG/dt = 5 A/s

Ptot / W BT136 Ths(max) / C ITSM / A BT136

8 81 30

IT ITSM
7 86.5
25
= 180 T time
6 1
92
120 20
97.5 Tj initial = 125 C max
5 90
60
4 103 15
30
3 108.5
10
2 114

1 119.5 5

0 125 0
0 1 2 3 4 5 1 10 100 1000
IT(RMS) / A Number of cycles at 50Hz

Fig.1. Maximum on-state dissipation, Ptot, versus rms Fig.3. Maximum permissible non-repetitive peak
on-state current, IT(RMS), where = conduction angle. on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.

ITSM / A BT136
1000
IT(RMS) / A BT136X
I TSM 5
IT

T time 92 C
4
Tj initial = 125 C max

100 3
dI T /dt limit

2
T2- G+ quadrant

10
10us 100us 1ms 10ms 100ms
T/s 0
-50 0 50 100 150
Ths / C
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for Fig.4. Maximum permissible rms current IT(RMS) ,
sinusoidal currents, tp 20ms. versus heatsink temperature Ths.

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Philips Semiconductors Product specification

Triacs BT136F series

IT(RMS) / A BT136 IL(Tj)

12 IL(25 C) TRIAC
3
10
2.5

8
2

6
1.5

4 1

2 0.5

0 0
0.01 0.1 1 10 -50 0 50 100 150
surge duration / s Tj / C

Fig.5. Maximum permissible repetitive rms on-state Fig.8. Normalised latching current IL(Tj)/ IL(25C),
current IT(RMS), versus surge duration, for sinusoidal versus junction temperature Tj.
currents, f = 50 Hz; Ths 92C.

IH(Tj)
VGT(Tj) IH(25C) TRIAC
3
VGT(25 C) BT136
1.6
2.5
1.4
2
1.2
1.5
1
1
0.8
0.5
0.6
0
-50 0 50 100 150
0.4 Tj / C
-50 0 50 100 150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25C),
Fig.6. Normalised gate trigger voltage versus junction temperature Tj.
VGT(Tj)/ VGT(25C), versus junction temperature Tj.

IGT(Tj) IT / A BT136
IGT(25 C) BT136 12
3 Tj = 125 C
T2+ G+ Tj = 25 C typ max
T2+ G- 10
2.5 Vo = 1.27 V
T2- G- Rs = 0.091 ohms
T2- G+ 8
2

1.5 6

1 4

0.5 2

0 0
-50 0 50 100 150 0 0.5 1 1.5 2 2.5 3
Tj / C VT / V

Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic.
IGT(Tj)/ IGT(25C), versus junction temperature Tj.

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Philips Semiconductors Product specification

Triacs BT136F series

Zth j-hs (K/W) BT136 dVcom/dt (V/us)

10 1000
with heatsink compound
without heatsink compound off-state dV/dt limit
BT136...G SERIES

unidirectional BT136 SERIES

1 bidirectional 100 BT136...F SERIES

0.1 P tp
D 10

t
dIcom/dt = 5.1 3.9 3 2.3 1.8 1.4
A/ms
0.01
10us 0.1ms 1ms 10ms 0.1s 1s 10s 1
0 50 100 150
tp / s Tj / C

Fig.11. Transient thermal impedance Zth j-hs, versus Fig.12. Typical commutation dV/dt versus junction
pulse width tp. temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.

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Philips Semiconductors Product specification

Triacs BT136F series

MECHANICAL DATA

Dimensions in mm
10.2
Net Mass: 2 g max
5.7 4.4
max 0.9 max
3.2 0.5
3.0 2.9 max

4.4
4.0 7.9
7.5
17
seating max
plane

3.5 max
4.4
not tinned

13.5
min

1 2 3

0.4 M 0.9
0.7
0.55 max
2.54
1.3
5.08

top view

Fig.13. SOT186; The seating plane is electrically isolated from all terminals.

Notes
1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

February 1996 6 Rev 1.100

Philips Semiconductors Product specification

Triacs BT136F series

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

February 1996 7 Rev 1.100

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