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Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)

2SC5071
Application : Switching Regulator and General Purpose
Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
4.80.2
A 15.60.4

5.00.2
VCBO 500 ICBO VCB=500V 100max

2.0
V

1.8
9.6 2.00.1

VCEO 400 V IEBO VEB=10V 100max A


VEBO 10 V V(BR)CEO IC=25mA 400min V

19.90.3

4.0
IC 12(Pulse24) hFE VCE=4V, IC=7A 10 to 30 a
A 3.20.1
b
IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max V
PC 100(Tc=25C) W VBE(sat) IC=7A, IB=1.4A 1.3max V
2

4.0max
20.0min
Tj 150 C fT VCE=12V, IE=1A 10typ MHz 3
Tstg 55 to +150 C COB VCB=10V, f=1MHz 105typ pF 1.05 +0.2 0.65 +0.2
-0.1 -0.1

Typical Switching Characteristics (Common Emitter) 5.450.1 5.450.1 1.4


B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) () (A) (V) (V) (A) (A) (s) (s) (s) a. Part No.
200 28.5 7 10 5 0.7 1.4 1.0max 3.0max 0.5max b. Lot No.

I C V CE Characteristics (Typical) V CE (sat),V BE (sat) I C Temperature Characteristics (Typical) I C V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
12 12
Collector-Emitter Saturation Voltage V C E (s at) (V )

1A
Base-Emitter Saturation Voltage V B E (s at) (V)

80 0m A
10 10
V B E (sat)
60 0m A

Collector Current I C (A)


Collector Current I C (A)

1
8 8
Temp)
55C (Case
400m A
e Temp)
6 25C (Cas 6

emp )

mp)
ase T

)
)

emp
)

mp
(C
25 Temp

200mA 125C

e Te
Te
4 4

se T
se
e
C

(Cas
as

(Ca

(Ca
I B =100mA
(C

5C
5

25C

55C
2 2
12 C
5

12
V C E (sat) 5

0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.5 1.0
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE I C Characteristics (Typical) t on t stg t f I C Characteristics (Typical) j-a t Characteristics


j - a ( C/W)

(V C E =4V)
40 5 3
t on t s tg t f ( s)

125C
V C C 200V t s tg
DC Cur rent Gain h F E

Transient Thermal Resistance

I C :I B1 :I B2 =10:1:2
25C
1
1
Swi tchi ng T im e

30C
0.5
tf
0.5
10
t on
8 0.1 0.3
0.02 0.05 0.1 0.5 1 5 10 12 0.5 1 5 10 12 1 10 100 1000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c T a Derating
30 30 100
10
0
s
M aximum Power Dissipa ti on P C (W)

10 10
W
ith
Co lle ctor Cu rren t I C (A)

Collector Curr ent I C (A)

5 5
In
fin
ite
he

50
at
si
nk

1 1
Without Heatsink
Natural Cooling
0.5 Without Heatsink 0.5
L=3mH
Natural Cooling I B2 =1.0A
Dut y:less than 1%

Without Heatsink
0.1 3.5
0.1 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(C)

125

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