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GT40T301
Parallel Resonance Inverter Switching Applications
Unit: mm
Equivalent Circuit
Collector
Gate
Emitter
1 2002-01-18
GT40T301
Electrical Characteristics (Ta = 25C)
15
Turn-on time ton 0.45
Switching time 15 V s
Fall time tf 0 0.23 0.40
15 V
Turn-off time toff 600 V 0.6
Emitter-collector forward voltage VECF IECF = 30 A, VGE = 0 1.9 2.5 V
Reverse recovery time trr IECF = 30 A, VGE = 0, di/dt = 20 A/s 0.7 3.0 s
IGBT 0.625
Thermal resistance Rth (j-c) C/W
Diode 1.25
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GT40T301
(V)
Tc = 40C
12
80 8
(A)
60 6 40
Collector current
20
80
40 10 4
IC = 10 A
20 2
VGE = 8 V
0 0
0 2 4 6 8 10 0 4 8 12 16 20
Tc = 25C
8 8
Collector-emitter voltage VCE
Collector-emitter voltage VCE
80
6 80 6
60
60
40 40
4 4
20 20
IC = 10 A
2 2 IC = 10 A
Common emitter
Tc = 125C
0 0
0 4 8 12 16 20 0 4 8 12 16 20
80 8
(A)
IC
60 6 80
Collector current
60
40 4 40
25
20
20 2 IC = 10 A
Tc = 125C
40
0 0
0 4 8 12 16 20 80 40 0 40 80 120 160
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GT40T301
(s)
Gate-emitter voltage VGE (V)
RL = 7.5 IC = 40 A
Tc = 25C 3 VGG = 15 V
Tc = 25C
Switching time
toff
ton
20
tr
1
300 0.5 tf
200
10
0.3
VCE = 100 V
0 0.1
0 40 80 120 160 200 240 280 1 3 5 10 30 50 100 300 500 1000
Tc = 25C
(s)
1 toff 500
300
C
0.5 ton
Switching time
Coes
tr
Capacitance
0.3 100
tf
50
30 Cres
0.1
10 Common emitter
0.05
VGE = 0 V
0.03 5
3 f = 1 MHz
Tc = 25C
0.01 1
0 10 20 30 40 50 1 3 5 10 30 50 100
50 10 s*
(A)
IC
30 100 s*
IC max
IC
(continuous)
Collector current
30
10
Collector current
5 DC operation
3 *: Single nonrepetitive
pulse 10
Tc = 25C Tj <
= 125C
1 Curves must be derated VGE = 15 V
linearly with increase in RG = 51
0.5
temperature.
0.3 3
1 3 10 30 100 300 1000 3000 10 30 100 300 1000 3000
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GT40T301
Common collector
Diode
Tc = 40C
60
Rth (t) (C/W)
IECF (A)
IGBT 25
101
40
125
102
20
Tc = 25C
103 0
105 104 103 102 101
0 1 2 0 1 2 3 4 5
10 10 10
(A)
(s)
2.0 16 0.8 80
Irr
Irr
Tc = 25C Tc = 25C
Peak reverse recovery current
trr
Reverse recovery time
1.5 12 0.6 60
Irr trr
1.0 8 0.4 40
trr
0 0 0 0
0 20 40 60 80 100 0 40 80 120 160 200 240
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GT40T301
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6 2002-01-18