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- Section 8 -
A.
B.
C.
D.
Answer: Option D
3. When a p-n junction is forward biased. The width of depletion layer decreases.
A. True B. False
Answer: Option A
4. In which of the following case the rating of the transformer to deliver 100 watts of d.c.
power to a load, will be least?
A. Half wave rectifier
B. Full wave rectifier
C. Bridge type full wave rectifier
D. Three phase full wave rectifier
Answer: Option D
7. A potential difference is developed across a current carrying metal strip when the strip is
placed in a transverse magnetic field. The above effect is known as
A. Fermi's effect
B. Photo electric effect
C. Joule's effect
D. Hall's effect
Answer: Option D
8. In a zener diode
A. forward voltage rating is high
B. negative resistance characteristics exists
C. sharp breakdown occurs at low reverse voltage
D. none of the above
Answer: Option C
9. Which one of the following bipolar transistors has the highest current gain bandwidth
Product (fr) for similar geometry?
A. NPN germanium transistor
B. NPN silicon transistor
C. PNP germanium transistor
D. PNP silicon transistor
Answer: Option B
15. Which of the following characteristics of a silicon p-n junction diode make it suitable for
use as ideal diode?
1. It has low saturation current.
2. It has high value of cut in voltage.
3. It can withstand large reverse voltage.
4. When compared with germanium diode, silicon diode shows a lower
degree of temperature dependence under reverse conditions.
Select the answer using the given below
A. 1 and 2
B. 1, 2, 3, 4
C. 2, 3, 4
D. 1, 3
Answer: Option B
18. Assertion (A): The capacitance of a reverse biased pin diode is lower than that of
reverse biased p-n diode.
Reason (R): A PIN diode has an intrinsic layer between p and n regions.
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Answer: Option A
19. In the saturation region of CE output characteristics of n-p-n transistor, VCE is about
A. 0.5 V
B. 15 V
C. - 0.5 V
D. - 15 V
Answer: Option A
A. Esaki diode
B. Triac
C. Varactor
D. Gunn diode
Answer: Option C
24. In energy band diagram of n type semiconductor, the donor energy level is
A. in valence band
B. in conduction band
C. slightly above valence band
D. slightly below conduction band
Answer: Option D
25. For an n-channel JEFT having drain source voltage constant if the gate source voltage
is increased (more negative) pinch off would occur for
A. high values of drain current
B. saturation values of drain current
C. zero drain current
D. gate current equal to the drain current
Answer: Option C
26. An intrinsic semiconductor (intrinsic electron density = 1016 m-3) is deped with donors to
a level of 1022 m-3. What is the hole density assuming all donors to be ionized?
A. 107 m-3
B. 108 m-3
C. 1010 m-3
D. 106 m-3
Answer: Option D
28. If Vr is the reverse voltage across a graded P-N Junction, then the junction
capacitancecj is proportional to
A. (Vr)2 B. (Vr)n
-n
C. (Vr) D. (Vr)3/2
Answer: Option B
29. In the schematic representation of bipolar junction transistor, the direction of arrow
shows the direction of flow of
A. holes
B. electrons
C. holes in pnp and electrons in npn
D. electrons in pnp and holes in npn
Answer: Option A
32. For an P-N-P transistor in normal operation its junction are biased as
A. emitter base : reverse, collector base : forward
B. emitter base : forward, collector base : reverse
C. emitter base : forward, collector base : forward
D. emitter base : reverse, collector base : reverse
Answer: Option B
33. A FET is to be operated as voltage variable resistor. For this drain to source voltage V DS
should be,
A. 74
B. = VP
C. < VP
D. > VP
Answer: Option C
34. Assertion (A): FET has characteristics very similar to that of pentode.
Reason (R): Both FET and pentode are voltage controlled devices.
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Answer: Option A
35. The current gain of a bipolar transistor drops at high frequencies because of
A. transistor capacitance
B. high current effects in the base
C. parasitic inductive elements
D. the early effect
Answer: Option A
37. The conductivity of an intrinsic semiconductor is (symbols have the usual meanings).
A. generally less than that a doped semiconductor
B. i = eni (n - p)
C. i = eni (n + p)
D. i = ni (n - p)
Answer: Option C
42. Silicon diodes have __________ reverse resistance than germanium diodes.
A. a much smaller
B. a much larger
C. an infinite
D. a negligible
Answer: Option B
43. The kinetic energy of photoelectrons emitted by a photo sensitive surface depends on
A. intensity of the incident radiation
B. wavelength of the incident radiation
C. surface conditions of the surface
D. angle of incidence of radiation
Answer: Option B
45. Which of the following statements regarding two transistor model of p-n-n-p device is
correct?
A. It explain only the turn on portion of the device characteristics
B. It explain only the turn off portion of the device characteristics
C. It explain only the negative region portion of the device characteristics
D. It explain all the regions of the device characteristics
Answer: Option D
49. When a semiconductor bar is heated at one end, a voltage across the bar is developed.
If the heated is positive the semiconductor is
A. P-type
B. n-type
C. intrinsic
D. highly degenerate
Answer: Option D