5.

2 Single-Stub Matching
Matching using TL Open or shorted stub (TL)
L, C not required. Zin = pure reactance
Hi h Q
High Q-factor
f t (low
(l loss)
l ) Yin = pure suceptance
t
Easy fabrication
Big size if l < / 4, shorted stub is inductive
open stub
t b is
i capacitive
iti

Z=Z0jX

Y=Y0jB

Not used in microstrip/CPW

Figure 5.4 (p. 229)
Single-stub tuning circuits
circuits.
(a) Shunt stub. (b) Series stub.

1 Microwave Engineering, JJEONG

Example : shunt stub (short-circuited)

Ex 5.2) ZL=60-j80 to 50 ohm. Use short-circuited stub. 2 GHz

Y=Y0jB

2 Microwave Engineering, JJEONG

1st solution 2nd solution
d=0.425-0.315=0.110 d=0.5+0.075-0.315=0.260
y=1+j1 47 -j1
y=1+j1.47 j1.47
47 needed y=1 j1 47 j1.47
y=1-j1.47 j1 47 needed
Short-circuited stub l=0.095 Short-circuited stub l= 0.405

3 Microwave Engineering, JJEONG

Solutions

Line length
metal loss
bandwidth

Figure 5.5b (p. 231) 2

= = f
(b) The two shunt- vp

stub tuning solutions. 2

=
(c) Reflection f vp
coefficient the longer l , the larger phase deviation
magnitudes versus
frequency for the -> Use short line if p
possible
tuning circuits of (b).

4 Microwave Engineering, JJEONG

 How to Make Open/Short Stubs
Microstrip line
Open stub : preferred.
Short
Sh t stub
t b : via-hole
i h l needed.
d d
Coaxial cable and waveguide
Open stub : large size antenna
Short stub preferred.

5 Microwave Engineering, JJEONG

Analytic Solutions

6 Microwave Engineering, JJEONG

 HW 5.1
Use ADS to solve the following problems
Small-signal equivalent circuit of MOSFET are shown below with parameter values. You
design an amplifier at 10 GHz using this MOSFET.
MOSFET A Z0 is 50 ohmohm.
1) Compute the input and output impedance (Zin and Zout) at 10 GHz. (Zin =10-j15.9, Zout
=7.6-j38.2)
2) Design input matching network using shunt C-series
C series L.
3) Design output matching circuit using series L-shunt C.
4) For the designed input/output matching circuits, find ZS and ZL. What relationship do ZS
and Zin have? What relationship p do ZL and Zout have?
Small-signal equivalent circuit
G D
output matching
Vc R ds
Input matching ZL network C gs
g mV c
network ZS Lo Ri C ds
Z 0 = 50 Li
Co
Z 0 = 50
Ci R i = 10 R ds = 200
Vs
Z0 Z in Z out C gs = 1pF C ds = 0 . 4 pF

g m = 50 mS

7 Microwave Engineering, JJEONG

Remarks

8 Microwave Engineering, JJEONG

 Quarter-wave Transformer
Z in Z L + jZ1 tan l
Z in = Z1
Z1 + jZ L tan l
2
Z 2
Z in (l = / 4) = 1 = =
ZL 4 2

Figure 5.10 (p. 241) A single-section quarter-wave matching : Z in = Z 0

matching transformer. = 0 / 4 at the design frequency f0.
Z1 = Z 0 Z L Z L should be real.

series stub

shunt stub

TL
Z0 ZL
ZL
180 rotation real axis

4

Real impedance to TL
Complex ZL : use TL/series/shunt stub first (bandwidth reduced)
Multi-section : broader bandwidth

9 Microwave Engineering, JJEONG

Multiple Reflections (1)

Find for the right figure (quarter-wave impedance transformer)

1)) Determine Zin

Z L + jZ 2 tan
Z in = Z 2 , =
Z 2 + jZ L tan
Z in Z 0
then, = Figure 5.13 (p. 244)
Z in + Z 0 Partial reflections and transmissions on a
single-section matching transformer.
transformer

2) Multiple reflections

Z 2 Z1 Z Z2 Z Z2
1 = , 2 = 1 = 1 , 3 = L
Z 2 + Z1 Z1 + Z 2 Z L + Z2
2Z 2
T21 = 1 + 1 =
Z1 + Z 2
2 Z1
T12 = 1 + 2 =
Z1 + Z 2

10 Microwave Engineering, JJEONG

 Multiple Reflections (2)
assume Vinc=1

= 1 + T21e j 3e j T12 + T21 A2 AT12 + T21 A2 A2 AT12

A
= 1 + T21T12 A(1 + A2 + A2 22 +

T12T213e j 2
= 1 + T21T12 3e j 2 2n 3n e j 2 n = 1 +
n =0 1 2 3e j 2
j 2
1 + 3e
= ( 2 = 1 , T21 = 1 + 1 , T12 = 1 1 )
1 + 13e j 2

11 Microwave Engineering, JJEONG

Multiple Reflections (3)

1 + 3e j 2
=
1 + 13e j 2

/4 transformer
Z1 Z 2
Z 2 = Z1 Z L = 1 = 3
Z2 ZL
1 1
e j 2 = e j = 1 = = 0 (perfact matching )
1 12

For
F small fl i , or 1 << 1, 3 << 1.
ll reflection

1 + 3e j 2
= j 2
1 + 3e j 2 /4 transformer
1 + 13e
total reflection : determined by 1 , 3 and e j 2 . 1 + 3e j 2 = 1 1 = 0

Z1 Z2 ZL
/ 4 = 90 o

out of phase (180o)

cancel!

12 Microwave Engineering, JJEONG

 Multiple Reflections (4)
Voltage across ZL
VL = T21e j + T21e j 3 + T21e j 3e j + T21e j 3e j 2 e j 3 +

) = T1 (1+e)e
j
(
= T21e j (1 + 3 ) 1 + 2 3e j + 21 3
j 2
2 3

for = ( 4 transformer ) 1 = 3 ,
2

VL =
(1 + 1 )
2
( j ) = j 1 + 1 VL = 1 + 1 = Z 2 = Z L
1 12
1 1 1 1 Z1 Z 2
2
1 V 1 Z 1 1
power to load L = L2 = power from TL1 (Z1)
2 ZL 2 Z2 2 Z1
Thus, all power incident to Z1 Transmission line delivered to load ZL !
(
Z1 < Z 2 < Z 3 3 > 0, 2 < 0 e j 2 = 1 added in phase in the load )

(
Z1 > Z 2 > Z 3 3 < 0, 2 > 0 e j 2 = 1 added in phase in the load )
/4 transformer
reflected waves added out-of p
phase at the interface between Z1 and Z2 lines
incident waves added in-phase in the load ZL
13 Microwave Engineering, JJEONG

Anti-reflection Coatings

Comparison between a
glasses lens without anti-
reflective coating (top) and
a lens with anti-reflective
anti reflective
coating (bottom). Note the
reflection of the
photographer in the top
lens and the tinted
reflection in the bottom.

14 Microwave Engineering, JJEONG

 Anti-reflection Coatings - Transformer

Quarter-wave impedance transformation

Z 0 > Z1 > Z 2 Single layer coating :

eliminates the reflection at one wavelength
1 < 0 Multi-layer coatings :
eliminates the reflection over the visible spectrum.

15 Microwave Engineering, JJEONG

Refraction
refractive index n, n=c/vp
n = r r r for most materials, r 1 at optical frequencies.
(vp maybe greater than c, c but vg can
cantt be greater than c)

n = r ~ 1 Z0

16 Microwave Engineering, JJEONG

 Bandwidth of Quarter-wave Transformer (1)
At the design frequency of f0, the electrical length of the matching section is
0/4, but at other frequencies the length is different, so a perfect match is no
longer
g obtained.
Bandwidth of the transformer ?
Z L + jZ1 tan
Z in ( f ) = Z1 ,
Z1 + jZ L tan
Z in Z 0 2
= , Z1 = Z 0 Z L
Z in + Z 0
1
=
1 + [4 Z 0 Z L /( Z L Z 0 ) 2 ] sec 2
approximation : around design frequency, frequency f 0
0 c
= , 0 =
sec >> 1
2
4 f0
2
2 f
Z Z0 = = f0
L cos
2 Z0Z L 2 f Figure 5.11 (p. 242)
= f = Approximate behavior of the reflection
c 2 f0 g
coefficient magnitude for a single-section
g
quarter-wave transformer operating near its
frequency design frequency.

17 Microwave Engineering, JJEONG

Bandwidth of Quarter-wave Transformer (2)

|| vs. f/f0 as a function of ZL/Z0
Z0 /4 ZL The ZL/Z0 closer to 1,
1 the wider bandwidth
(increased bandwidth for smaller load mismatches)
Use multi-section transformer for wider bandwidth

For allowable m, the fractional BW f/f0 is

given
i b
by
f 4 2 Z0Z L
= 2 cos 1 m

f0 1 m2 Z L Z 0

Ex 5.5) /4-transformer from 10 to 50 at

3 GHz. Bandwidth for VSWR 1.5

Figure 5.12 (p. 243)

ans). Z1 = Z 0 Z L = 50 10 = 22.36
Reflection coefficient magnitude versus frequency VSWR 1 f
for a single
single-section
section quarter-wave
quarter wave matching m = = 0.2, = 0.29(29% )
transformer with various load mismatches. VSWR + 1 f0
18 Microwave Engineering, JJEONG
 Multi-section Transformer
Zn ?

Fi
Figure 5
5.14
14 ((p. 245)
Partial reflection coefficients for a
multisection matching transformer. Single section
Lower ZL/Z0, wider bandwidth
ZL
= 10
Z0 Z1 ZL Z0
single - section

Lets use 10-sections with a same impedance transformation

ratio for each section. Then,

Z1 Z 2 ZL 2
= = = =X Z L = X 11Z 0 , X 11 = 10
Z 0 Z1 Z10
X = 1.23
Multi-section low |Zn+1-Zn| broad bandwidth
19 Microwave Engineering, JJEONG

Binomial Multi-Section Transformer

Z n +1 Z Z0 N Maximally flat performance
ln 2 N L Cn
Zn Z L Z0
N!
, CnN =
( N n)!n!

Figure 5.15 (p. 250)

Reflection coefficient magnitude versus frequency for
multisection
lti ti bibinomial
i l matching
t hi ttransformers
f off E
Example
l
5.6 ZL = 50 and Z0 = 100.

20 Microwave Engineering, JJEONG

 Chebyshev Multi-Section Transformer
Refer to Chebyshev table for Z n Equi-ripple performance : optimize the
bandwidth at the expense of passband ripple.
(N : numbe of sections,
m : minimum allowable )

Figure 5.17 (p. 255)

Reflection
R fl ti coefficient
ffi i t magnitude
it d versus ffrequency for
f the
th
multisection matching transformers of Example 5.7.

21 Microwave Engineering, JJEONG

Tapered Lines
Multi-section matching transformer
section # Z n +1 Z n BW
infinite # of sections
Z n +1 Z n 0

Continuously
C ti l ttapered
d liline
Z + Z Z Z
=
Z + Z + Z 2Z
Z
d ln( )
dZ 1 Z0
z 0, then d = = dz
2Z 2 dz
Theory of small reflection
Figure 5.18 (p. 256)
A tapered transmission line matching
1 z = L j 2 z d Z section and the model for an incremental
( ) = e ln( )dz length of tapered line. (a) The tapered
2 z = 0 dz Z 0 transmission line matching section.

: Z (z ) ( )
(b) Model for an incremental step change
in impedance of the tapered line.

22 Microwave Engineering, JJEONG

 Tapered Lines : Exponential Taper
Exponential taper

Z (z ) = Z 0 e az for 0 < z < L

Z (0 ) = Z 0 , Z (L ) = Z L = Z 0 e aL
1 ZL
a= ln
L Z0

=
1 L j 2 z d
2 0
e
dz
(ln e az )dz
ln Z L Z 0 jL sin
= e
2 L
( assumed const. w.r.t z.
valid only for TEM lines.)

L > L > small
2
Figure 5.19 (p. 257)
A matching section with an exponential
impedance taper. (a) Variation of impedance. (b)
Resulting reflection coefficient magnitude
response.

23 Microwave Engineering, JJEONG

Tapered Lines : Triangular Taper

Triangular Taper

2( z / L )2 lnl ZZL L
Z 0 e 0
for 0 z
2
Z (z ) =
(4 z / L 2 z L 1)ln Z 0
2 2 ZL
L
Z 0 e for z L
2
Z sin ( L / 2 )
2
1
( ) = e jL ln L
2 Z 0 L / 2

Figure 5.20
5 20 (p.
(p 258)
A matching section with a triangular
taper for d(In Z/Z0/dz. (a) Variation
of impedance. (b) Resulting
reflection coefficient magnitude
response.

24 Microwave Engineering, JJEONG

 Tapered Lines : Klopfenstain Taper
Klopfenstain taper
which design is best? Klopfenstain taper
minimum || over the passband for a given length.

1 0
ln Z ( z ) = ln Z 0 Z L + A2 (2 z / L 1, A)
2 cosh A

( x, A) = ( x, A) =
x (
I1 A 1 y 2 ) dy for x 1.
0
A 1 y2
I1 ( x ) : modified Bessel function. K : m = 0.02
for 1.13
cos (L )2 A2
( ) = 0 e j L
for L > A.
cosh A
Z Z0 1 Z L
0 = at DC = L ln
Z L + Z0 2 Z0
0
max =
cosh A
Z ( z ) has steps at z = 0 and L. Figure 5.21 (p. 260) Solution to Example 5.8. (a) Impedance variations for the
triangular, exponential, and Klopfenstein tapers. (b) Resulting reflection coefficient
magnitude versus frequency for the tapers of (a).

25 Microwave Engineering, JJEONG

Bode-Fano Criterion (1)

Theoretical limits of the performance of Q = 0 RC
the impedance matching network:

Can we achieve a perfect match over a

specified bandwidth?
1
Q=
If not, how
h wellll can we d
do?
? Wh
What iis the
h 0 RC
trade off between m, the maximum
allowable reflection in the passband, and
the bandwidth?
R
How complex the matching network be Q=
0 L
for a given specification?

Bode Fano limit

0 L
Q=
R

26 Microwave Engineering, JJEONG

 Bode-Fano Criterion (2)
ex) Consider type (a ) and ( ) in right figure.

1 1 1

0
ln

d = ln

m
d = ln
m RC

m
m = 0 = 0 or perfect match
at a finite # of freq.
As RC increases, the quality of
match(,
( , 1/m ) must decrease.

1
ln
0 m Q
HigherQ circuits are intrinsically harder to Figure 5.23 (p. 263)
match than are lowerQ circuits. Illustrating the Bode-Fano criterion. (a) A possible
reflection coefficient response. (b) Nonrealizable and
Higher-Q load : narrower band impedance p
realizable reflection coefficient responses.
matching.

Optimum case
||=m over the passband and ||=1 elsewhere like Fig
Fig. (a) (sharp transition)
but, impractical Chebyshev type
27 Microwave Engineering, JJEONG

Q-factor Lines on Smith Chart

Q-factor
The lower Q, the wider bandwidth
Series elements : Q = Im[Z]/Re[Z]
Keep the Q low while impedance
Q of inductor : Ls/Rs transformation!!!
Rs Ls

Q of capacitor : 1/(RsCs)

Rs Cs

Parallel elements : Q = Im[Y]/Re[Y]

/
Q of inductor : Rp/Lp
Q of capacitor : RpCp
Rp Rp

Lp Cp

28 Microwave Engineering, JJEONG

 Broadband Match Using Multi-Section
1. Shunt C-series L
2. Shunt L-series C
3
3. Series TL-series
TL series L
4. Series TL-shunt L

Which is the most broadband?

Think of the BW of
Series L-shunt
L shunt C-series
C series L-shunt
L shunt C-series
C series L
matching circuits.
29 Microwave Engineering, JJEONG

HW 5.2
bandwidth : HW 5.1

(S11, S21) .
( = 10 GH
GHz))

1. 1 lumped elements
2. TL (series-L ) + lumped L or C
3
3. TL (series-L ) + stub
4. 2 lumped elements
5. 3 lumped elements
6. .

30 Microwave Engineering, JJEONG

 Remarks

31 Microwave Engineering, JJEONG

Impedance Matching Using Transmission Lines

Lumped elements (L, C)
Low quality factor : high loss
Small size

Transmission lines
High quality factor : low loss
Easy fabrication : well-controlled
Big size

Can we replace the lumped elements with transmission lines?

32 Microwave Engineering, JJEONG

 Impedance Synthesis using Short T/L (1)
Z0, l
Z L + jZ 0 tan l
Zin ZL Z in = Z 0 for l < / 6, or l < / 12
Z 0 + jZ L tan l

short-circuited TL, ZL = 0 Shunt L

t l jZ 0 l = jZ 0l / v p = jLeq
Z in = jZ 0 tan

Leq Z 0l / v p inductive

open-circuited TL, ZL = Shunt C

Z in = jZ 0 cot l = j / Ceq

Ceq l /(v p Z 0 ) capacitive

33 Microwave Engineering, JJEONG

Impedance Synthesis using Short T/L (2)

Series L
Z 0 + jZ1l
Z in Z1 >> Z 0 Z in Z1 Z 0 + jZ1l
Z1 + jZ 0 l
Z1 High impedance (Z1) line
Z0 l
Z0 Leq = Z1 inductive (series)
vp Z1 Leq
l

shunt C Y0 + jY1 l
Yin Yin Y1 Y0 + jY1l
Y1 >> Y0 Y1 + jY0 l

1 l Low impedance (Z1) line

Z1 C eq = capacitive (shunt)
Z0 Z0 Z1 v p Z1 Ceq
l

series C : gap

34 Microwave Engineering, JJEONG

 What happens on Smith Chart?
Series High/low impedance line Cf)quarter-wave impedance transformer
z L = 0.5 + j 0.5

Z1 > Z 0 ~ series inductor

Z1 < Z 0 ~ shunt capacitor

35 Microwave Engineering, JJEONG

Impedance Synthesis using Short T/L (3)

Series L Shunt C Shunt L Series C

gap

Z0H Z0H
Z0L Z0L Z0L

l<
l< Z0H 10
10

Ground

(parasitic
resonance)

36 Microwave Engineering, JJEONG

 Ex) LPF with TLs

15 15 15

50 50
100 100

L L
Port C L5 C L6 C Port
P1 C4 C5 C6 P2
Num=1 Num=2

Advantage ~ lower loss than lumped LC, well-controlled

Disadvantage ~ large chip area

37 Microwave Engineering, JJEONG

Resonant Circuits Using TLs

Shunt Resonant Shunt Anti-Resonant

Sh t C
Shunt
Series L

Shunt L
Shunt C

38 Microwave Engineering, JJEONG

 HW 5.3
Design the amplifier using ADS
Small-signal equivalent circuit of MOSFET are shown below with parameter values. given below. You
d i an amplifier
design lifi att 10 GH
GHz usingi thi
this MOSFET
MOSFET. A Z0 isi 50 ohm.
h
1) Compute the input and output impedance (Zin and Zout) at 10 GHz.
2) Design input matching network using transmission lines only.
3) Design output matching circuit using transmission lines only.
4) Find s-parameters of the designed amplifiers from in 1 GHz to 20 GHz.
5) Compare the bandwidth performance with the amplifier designed using lumped elements.

Small-signal equivalent circuit

G D
output matching R ds
ZL C gs Vc
t k
network
g mV c
Input matching
network
ZS Ri C ds
Z 0 = 50

Z 0 = 50
R i = 15 R ds = 200
Vs
Z0 Z in Z out C gs = 1 . 2 pF C ds = 0 . 1pF

g m = 150 mS

39 Microwave Engineering, JJEONG

Remarks
Matching BW
lumped > distributed
Multi-stage > single-stage
Short TL > long TL
Some mismatch at center frequency > perfect match at center frequency

40 Microwave Engineering, JJEONG

Remarks

41 Microwave Engineering, JJEONG