BSV52

BSV52

E
SOT-23 B
Mark: B2

NPN Switching Transistor

This device is designed for high speed saturated switching at
collector currents of 10 mA to 100 mA. Sourced from Process 21.

Absolute Maximum Ratings* TA = 25C unless otherwise noted

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 12 V
VCES Collector-Base Voltage 20 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25C unless otherwise noted

Symbol Characteristic Max Units

*BSV52
PD Total Device Dissipation 225 mW
Derate above 25C 1.8 mW/C
RJA Thermal Resistance, Junction to Ambient 556 C/W

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

1997 Fairchild Semiconductor Corporation

 BSV52
NPN Switching Transistor
(continued)

Electrical Characteristics TA = 25C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 12 V
V(BR)CES Collector-Base Breakdown Voltage IC = 10 A, IE = 0 20 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 A, IC = 0 5.0 V
ICBO Collector-Cutoff Current VCB = 10 V, IE = 0 100 nA
VCB = 10 V, IE = 0, TA = 125C 5.0 A

ON CHARACTERISTICS
hFE DC Current Gain IC = 1.0 mA, VCE = 1.0 V 25
IC = 10 mA, VCE = 1.0 V 40 120
IC = 50 mA, VCE = 1.0 V 25
VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.3 mA 0.3 V
IC = 10 mA, IB = 1.0 mA 0.25 V
IC = 50 mA, IB = 5.0 mA 0.4 V
VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.7 0.85 V
IC = 50 mA, IB = 5.0 mA 1.2 V

SMALL SIGNAL CHARACTERISTICS

fT Transition Frequency IC = 10 mA, VCE = 10 V, 400 MHz
f = 100 MHz
Ccb Collector-Base Capacitance IE = 0, VCB = 5.0 V, f = 1.0 MHz 4.0 pF
Emitter-Base Capacitance IC = 0, VEB = 1.0 V, f = 1.0 MHz 4.5 pF
Ceb
3
SWITCHING CHARACTERISTICS
ts Storage Time IB1 = IB2 = IC = 10 mA 13 ns
ton Turn-On Time VCC = 3.0 V, IC = 10 mA, 12 ns
IB1 = 3.0 mA
toff Turn-Off Time VCC = 3.0 V, IC = 10 mA, 18 ns
IB1 = 3.0 mA, IB2 = 1.5 mA

Spice Model
NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p
Itf=.3 Vtf=4 Xtf=4 Rb=10)
 BSV52
NPN Switching Transistor
(continued)

Typical Characteristics

DC Current Gain Collector-Emitter Saturation

V CESAT - COLLE CTOR-EMITTER VOLTAGE (V)

vs Collector Current Voltage vs Collector Current
200 0.5
= 10
VC E = 1.0V
- DC CURRENT GAIN

0.4
150

125 C 0.3
100 25 C
0.2 125 C
25 C
50 - 40 C
0.1
FE

- 40 C
h

0
0.01 0.1 1 10 100 0.1 1 10 100 500
IC - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Base-Emitter Saturation Base-Emitter ON Voltage vs

Voltage vs Collector Current Collector Current
V BE(O N) - BASE-E MITTER ON VOLTAGE (V)
V BESAT- BASE -EMITTER VOLTAG E (V)

1
1.4
= 10
- 40C
1.2 0.8 25 C

1
125 C
- 40 C 0.6
0.8

0.6 25 C
0.4 V CE= 1.0V

0.4 125 C
0.2
0.1 1 10 100 300 0.1 1 10 100
IC - COLLE CTOR CURRENT ( mA) I C - COLLECTOR CURRENT (mA)

Collector-Cutoff Current
vs Ambient Temperature
I CBO - COLLECTOR CURRENT (nA)

600
V CB = 20V

100

10

1
25 50 75 100 125 150
T A - AMBIENT TE MPERATURE (C)
 BSV52
NPN Switching Transistor
(continued)

Typical Characteristics (continued)

Output Capacitance vs Switching Times vs

Reverse Bias Voltage Collector Current
5 100
F = 1.0MHz VCC = 3.0 V
50 I C = 10 I B1 = I B2 = 10

SWITCHING TIMES (ns)

4
CAPACITANCE (pF)

C ibo
20
3 tsr
C obo 10
2 t sf
5

1 tss
2 ts d

0 1
0.1 0.5 1 5 10 50 2 5 10 20 50 100 300
REVERSE BIAS VOLTAGE (V) I C - COLLECTOR CURRENT (mA)

Switching Times vs Storage Time vs Turn On

Ambient Temperature and Turn Off Base Currents
I B2 - TURN OFF BASE CURRENT (mA)

12 -12
tsf I C = 10 mA
VCC = 3.0 V
S WITCHING TIMES ( ns)

10 -10

8 tss -8
t s= 3.0 ns
3
6 -6
tsd
4.0 ns
4 -4
tsr
2 -2 6.0 ns
I C= 10 mA, I B1 = 3.0 mA, I B2 = 1.5 mA, VCC = 3.0 V
0 0
25 50 75 100 0 2 4 6 8 10
T A - AMBIENT TE MPERATURE (C) I B1 - TURN ON BASE CURRENT (mA)

Storage Time vs Turn On Storage Time vs Turn On

and Turn Off Base Currents and Turn Off Base Currents
I B2 - TURN OFF BASE CURRENT (mA)

I B2 - TURN OFF BASE CURRENT (mA)

-12 -30
I C = 10 mA I = 100 mA
C 4.0 ns
-10 VCC = 3.0 V -25 VCC = 3.0 V

t S= 3.0 ns 8.0 ns
-8 -20 6.0 ns
t s= 3.0 ns
-6 -15
4.0 ns
-4 -10
16.0 ns

-2 6.0 ns -5

0 0
0 2 4 6 8 10 0 5 10 15 20 25 30
I B1 - TURN ON BASE CURRENT (mA) I B1 - TURN ON BASE CURRENT (mA)
 BSV52
NPN Switching Transistor
(continued)

Typical Characteristics (continued)

Fall Time vs Turn On Fall Time vs Turn On

and Turn Off Base Currents and Turn Off Base Currents

I B2 - TURN OFF BASE CURRENT (mA)

I B2 - TURN OFF BASE CURRENT (mA)

-6 -12
I C = 10 mA I C = 30 mA
VCC = 3.0 V VCC = 3.0 V 3.0 ns
-5 -10
4.0 ns

-4 8.0 ns -8
ft = 2.0 ns
t f = 7.0 ns
-3 -6 5.0 ns

-2 10 ns -4

-1 -2

0 0
0 2 4 6 8 10 0 2 4 6 8 10 12
I B1 - TURN ON BASE CURRENT (mA) I B1 - TURN ON BASE CURRENT (mA)

Fall Time vs Turn On Delay Time vs Base-Emitter OFF

and Turn Off Base Currents Voltage and Turn On Base Current
V BE(O)- BASE-EMITTER OFF VOLTAGE (V)
I B2 - TURN OFF BASE CURRENT (mA)

-30 -6
I C = 100 mA 3.0 ns I C = 10 mA
4.0 ns
-25 VCC = 3.0 V -5 V CC = 3.0 V
t d = 8.0 ns
-20 -4
t f = 2.0 ns 8.0 ns
5.0 ns
-15 -3 4.0 ns

-10 12.0 ns -2
3.0 ns
-5 -1

0 0
0 5 10 15 20 25 30 1 2 5 10 20 50
I B1 - TURN ON BASE CURRENT (mA) I B1 - TURN ON BASE CURRENT (mA)

Rise Time vs. Turn On Base Power Dissipation vs

Current and Collector Current Ambient Temperature
- TURN ON BASE CURRENT (mA)

50 350
VCC = 3.0 V
P D - POWER DISSIPATION (mW)

300
10 t r= 2.0 ns
250 SOT-23

200
5.0 ns

1 150
20 ns
10 ns 100

50
0
B1

1 10 100 500 0
I

0 25 50 75 100 125 150

I C - COLLECTOR CURRENT (mA)
TEMPERATURE ( oC)
 BSV52
NPN Switching Transistor
(continued)

Test Circuits

+6V 10% Pulse waveform

0.1 F
'A' 890
1 K at point ' A'
0
VIN
0 0.1 F
VIN 500 - 4V
VOUT
- 10 91 VOUT
56 500 10%
Pulse generator ts
VIN Rise Time < 1 ns F
0.0023 F
0.0023
Source Impedance = 50
PW 300 ns
Duty Cycle < 2%
+ +
11 V 10 F 10 F 10 V

FIGURE 1: Charge Storage Time Measurement Circuit

VOUT 0 10%
220
VIN VIN
VIN

3.3 K
10%
0
90%
50 VOUT
VOUT 50
3.3 K t off
90% toff VBB = 12 V
t on VIN = - 20.9 V
ton F
0.0023 F
0.0023
VBB = - 3.0 V
VIN = + 15.25 V
0.05 F 0.05 F
To sampling oscilloscope input
impedance = 50
3
Pulse generator Rise Time 1 ns
VIN Rise Time < 1 ns
Source Impedance = 50
VBB 0.1 F 0.1 F
PW 300 ns VCC = 3.0 V
Duty Cycle < 2%

FIGURE 2: tON, tOFF Measurement Circuit

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

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Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G