MATERIALS AND COMPONENTS 3. 5.

Above ferroelectric curie temperature, spontaneous Assertion (A): Atomic number of sodium is 11.
polarization in ferroelectric materials becomes stronger.
SECTION 1 Reason (R): Sodium has a body centred cubic lattice.
A.True
1. B.False Both A and R are true and R is correct explanation of
A.
Diamond is a paramagnetic material. Answer & Explanation A
Both A and R are true but R is not correct explanation
B.
A.True Answer: Option B of A
B.False C.A is true but R is false
Answer & Explanation Explanation: D.A is false but R is true
Answer & Explanation
Answer: Option B Spontaneous polarization vanishes above ferro-electric
Curie temperature. Answer: Option B
Explanation:
View Answer Workspace Report Discuss in Forum Explanation:
Diamond is diamagnetic.
4. Atomic number is not dependent on lattice structure.
View Answer Workspace Report Discuss in Forum In paramagnetic materials

2. permanent magnetic dipoles exist but the interaction

Which capacitor-store higher amount of energy? A.
between neighbouring dipoles is negligible 6.
B.permanent magnetic dipole do not exist The conductivity of intrinsic semiconductor is given by
A.Air capacitor permanent magnetic dipoles exist and the interaction
B.Paper capacitor C.
between neighbouring dipoles is very strong A.eni(p - n)
C.Mica capacitor permanent magnetic dipole moment may or may not
D. B.eni(p + n)
D.Plastic film capacitor exist C.ni(p + n)
Answer & Explanation Answer & Explanation D.ni(pn)
Answer & Explanation
Answer: Option C Answer: Option A
Answer: Option B
Explanation: Explanation:
Explanation:
Energy stored is proportional to capacitance and In paramagnetic materials interaction between
capacitance is proportional to permittivity. neighbouring dipoles is negligible. For intrinsic semiconductor,
View Answer Workspace Report Discuss in Forum View Answer Workspace Report Discuss in Forum Conductivity = (Electron charge) x (Number of charge
carriers) x (Sum of mobilities of holes and electrons).
 View Answer Workspace Report Discuss in Forum
constant) = (100 x 10-6 x 100)0.5 = 0.1 cm. Answer: Option C
7.
The core of a coil has a length of 10 cm. The self View Answer Workspace Report Discuss in Forum Explanation:
inductance is 8 mH. If the core length is doubled, all
other quantities remaining the same, the self inductance 9. The overall temperature coefficient will be less than
will be Assertion (A): Electronic and Ionic polarization in a 0.004 and more than 0.0004.
polyatomic gas are independent of temperature.
A.32 mH
B.16 mH Reason (R): The orientation polarization is independent
C.8 mH of temperature.
11.
D.4 mH
The number of valence electrons in pentavalent
Answer & Explanation Both A and R are true and R is correct explanation of
A. impurity is
A
Answer: Option D Both A and R are true but R is not correct explanation
B. A
of A 5 B.4
.
Explanation: C.A is true but R is false
D
D.A is false but R is true C.3 1
.
Inductance is inversely proportional to the core length. Answer & Explanation
Answer & Explanation
View Answer Workspace Report Discuss in Forum Answer: Option C
Answer: Option A
8. Explanation:
The minority carrier life time and diffusion constant in a Explanation:
semiconducting material are 100 s and 100 cm2/s Orientation polarization is inversely proportional to
respectively. The diffusion length of carriers is Pentavalent means 5 valence electrons.
temperature.

A.0.1 cm View Answer Workspace Report Discuss in Forum

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B.0.01 cm
12.
C.0.0141 cm 10.
If the diameter of a wire is doubled, its current carrying
D.1 cm Two materials having temperature coefficients of 0.004
capacity becomes
Answer & Explanation and 0.0004 respectively are joined in series. The overall
temperature coefficient is likely to be
A
Answer: Option A one-fourth
.
A
0.08 B.0.04 B.half
Explanation: .
C.twice
D
C.0.001 0.0001 D
Diffusion length = sqrt(Carrier life time x Diffusion . four times
.
Answer & Explanation
 Answer & Explanation . A 16.
Both A and R are true but R is not correct explanation A parallel plate capacitor has its length, width and
B.
Answer: Option D of A separation doubled. It fringing effects are neglected, to
C.A is true but R is false keep the capacitance same, the dielectric constant must
Explanation: D be
A is false but R is true
.
Current carrying capacity depends on area of cross- Answer & Explanation A
halved
section. .
Answer: Option C B.kept the same
View Answer Workspace Report Discuss in Forum C.doubled
Explanation: D
made 4 times
13. .
The law J = E, where J is current density, is Cut in voltage of silicon is higher than that in Answer & Explanation
electrical conductivity and E is field strength is germanium.
Answer: Option A
A View Answer Workspace Report Discuss in Forum
Ohm's law
. Explanation:
B.Gauss law 15.
C.Ampere's law Material which lack permanent magnetic dipoles are
D known as . When dimensions are changed, A become
Biot-Savart law
. four times and d becomes twice.
Answer & Explanation A
paramagnetic B.diamagnetic
. Since 0 is constant, r must be halved to keep C
Answer: Option A D constant.
C.ferromagnetic ferrimagnetic
.
Explanation: Answer & Explanation View Answer Workspace Report Discuss in Forum

It is another form of Ohm's law. Answer: Option B 17.

Assertion (A): In imperfect capacitors, the current does
View Answer Workspace Report Discuss in Forum Explanation: not lead the applied ac voltage by 90.

14. Diamagnetic materials have no permanent magnetic Reason (R): When subjected to ac fields, the dielectric
Assertion (A): Silicon is less sensitive to changes in diploes. constant can be expressed as 'r - j"r.
temperature than germanium.
A Both A and R are true and R is correct explanation of
Reason (R): Cut in voltage in silicon is less than that in . A
germanium. Both A and R are true but R is not correct explanation
B.
of A
A Both A and R are true and R is correct explanation of C.A is true but R is false
 D silicon A
A is false but R is true Resistance
. D resistivity of silicon will be higher than that of .
Answer & Explanation . germanium B.Capacitance
Answer & Explanation C.Inductance
Answer: Option A D
Both resistance and inductance
Answer: Option D .
Explanation: Answer & Explanation
Explanation:
Imaginary part of r gives rise to absorption of energy Answer: Option C
by the material from alternating field. Resistivity of silicon is more than that of germanium.
Explanation:
Hence current does not lead the voltage by 90. View Answer Workspace Report Discuss in Forum
Inductance opposes rise and decay of current. Hence it
View Answer Workspace Report Discuss in Forum 20. has the property of inertia.
When an electric field E is applied to solid and liquid
18. insulating materials, the internal field Ei acting at the View Answer Workspace Report Discuss in Forum
In atomic physics, a state with l = 0 is called p state. location of atom is such that
22.
A A For a permanent magnetic material
True B.False E =E
. . i
Answer & Explanation B.Ei > E A the residual induction and coercive field should be
C.Ei < E . large
Answer: Option B D the residual induction and coercive field should be
E may be equal to or less than E B.
. i small
Explanation: Answer & Explanation C.area of hysteresis loop should be small
D
initial relative permeability should be high
The state with l = 0 is called s state. Answer: Option B .
Answer & Explanation
View Answer Workspace Report Discuss in Forum Explanation:
Answer: Option A
19. The actual field seen by an atom is larger than applied
If a sample of germanium and a sample of silicon have field. Explanation:
the same impurity density and are kept at room
temperature Materials suitable for permanent magnet have large
hysteresis loop.
A
both will have equal value of resistivity 21.
. Hence residual and coercive field are large.
Which element exhibits the property of inertia?
B.both will have equal negative resistivity
C.resistivity of germanium will be higher than that of View Answer Workspace Report Discuss in Forum
23. materials. Answer: Option B
In a coaxial cable, braided copper is used for
Reason (R): For diamagnetic as well as paramagnetic Explanation:
A materials, r is nearly equal to 1.
conductor B.shield
. The valence electron, in copper atom, can be easily
D A Both A and R are true and R is correct explanation of detached from nucleus.
C.dielectric jacket
. . A
Answer & Explanation Both A and R are true but R is not correct explanation View Answer Workspace Report Discuss in Forum
B.
of A
Answer: Option B C.A is true but R is false 27.
D If the temperature of an extrinsic semiconductor is
A is false but R is true
Explanation: . increased so that the intrinsic carrier concentration is
Answer & Explanation doubled, then
Braided material is used for shield.
Answer: Option A A
the majority carrier density is doubled
View Answer Workspace Report Discuss in Forum .
Explanation: B.the minority carrier density is doubled
24. the minority carrier density becomes 4 times the
C.
The hysteresis phenomenon in ferromagnetic materials Magnetic susceptibility = (r - 1)H. original value
exists at all temperatures. D both the majority and minority carrier densities
For diamagnetic and paramagnetic materials magnetic . double
A susceptibility is very very small and r = 1. Answer & Explanation
True B.False
.
Answer & Explanation Answer: Option D

Answer: Option B Explanation:

26.
Explanation: The attraction between the nucleus and valence electron
As the intrinsic carrier concentration is doubled, the
of copper atom is
concentration of both electrons and holes is doubled.
Hysteresis phenomenon exists below ferromagnetic
curie temperature. A
zero View Answer Workspace Report Discuss in Forum
.
B.weak 28.
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C.strong There is no hysteresis phenomenon is any dielectric
25. D material.
either zero or strong
Assertion (A): Magnetic susceptibility of diamagnetic .
materials is much less than that of paramagnetic Answer & Explanation A
True B.False
.
 Answer & Explanation
Answer: Option A Answer: Option C
Answer: Option B
Explanation: Explanation:
Explanation:
In a metal valence electrons are shared by all atoms. Modem large size generators have hydrogen cooling.
Hysteresis phenomenon exists in dielectic materials.
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33.
31.
29. Assertion (A): Ferroelectric materials have
For a paramagnetic material, susceptiblity increases
The units of 0 and r are spontaneous polarization.
with increasing temperature.
A
H/m for both A Reason (R): Above curie temperature, = for
. True B.False
. ferro-electric materials.
B.H/m for r and no units for 0
Answer & Explanation
C.H/m for 0 and no units for r
D A Both A and R are true and R is correct explanation of
Wb/m for 0 and no units for r Answer: Option B
. . A
Answer & Explanation Both A and R are true but R is not correct explanation
Explanation: B.
of A
Answer: Option C C.A is true but R is false
D
Susceptibility . A is false but R is true
Explanation: .
Answer & Explanation
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r is only a numeric.
Answer: Option B
32.
View Answer Workspace Report Discuss in Forum Hydrogen is used in
Explanation:
30.
A
In metals the valence electron wave functions are large size transformers Both A and R are correct. Spontaneous polarization
.
strongly perturbed by the presence of neighbouring vanishes above ferroelectric curie temperature.
B.MCB
atoms.
C.large size generators
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D
A circuit breakers
True B.False .
. 34.
Answer & Explanation
Answer & Explanation If e is the charge of an electron, R is the radius of its
orbit and is the angular velocity of electron, the
 36.
2
magnetic dipole moment m of the orbit is |m| = eR . Assertion (A): At a temperature of 1000 K, thermionic Answer: Option D
emission current is about 0.1 A/cm2 of surface.
A Explanation:
True B.False
. Reason (R): Thermionic emission current is given by
Answer & Explanation Ith = SA0 T2 e-Ew/kT. Both electrons and holes contribute to flow of current in
semiconductors.
Answer: Option B A Both A and R are true and R is correct explanation of
. A View Answer Workspace Report Discuss in Forum
Explanation: Both A and R are true but R is not correct explanation
B.
of A 38.
2
1 m 1 = 0.5 e .
r C.A is true but R is false Ferroelectric materials are those which
D
A is false but R is true
View Answer Workspace Report Discuss in Forum . A
cannot be polarized
Answer & Explanation .
35. B.have a permanent polarization
If r' and r" are the real and imaginary parts of Answer: Option A C.have ae equal to zero
complex dielectric constant r, and is the loss angle. D
have p = 0
Then Explanation: .
Answer & Explanation
A If different values are substituted in the equation for Ith
. the value of emission current comes out to be about 0.1 Answer: Option B
A/cm2.
B. Explanation:
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C.tan = '" Ferroelectric materials have permanent polarization.
D 37.
tan = 1 - '
. At room temperature, the current in intrinsic View Answer Workspace Report Discuss in Forum
Answer & Explanation semiconductor is due to
39.
Answer: Option B A Assertion (A): Power loss in a conductor of resistance
holes
. P = I2R.
Explanation: B.electrons
C.ions Reason (R): When a conductor is carrying current with
If = 0, = 0.
r
"
D current density J as a result of applied field E, then heat
holes and electrons
. developed/m3/ second = JE.
Answer & Explanation
A Both A and R are true and R is correct explanation of
. A
 Both A and R are true but R is not correct explanation 41.
B.
of A If n denotes principal quantum number, the angular leads the applied voltage by 90.
C.A is true but R is false quantum number l = 0, 1... (n - 1).
D Also imaginary part of is r is zero.
A is false but R is true
. A
True B.False
Answer & Explanation . View Answer Workspace Report Discuss in Forum
Answer & Explanation
Answer: Option A 43.
Answer: Option A Assertion (A): For a solenoid having N turns,
Explanation:
Explanation: .
Heat developed depends an power loss.
Angular quantum number determines the angular Reason (R): For all magnetic materials, B increases
View Answer Workspace Report Discuss in Forum momentum of electron. linearly with I.
40. View Answer Workspace Report Discuss in Forum A Both A and R are true and R is correct explanation of
Assertion (A): For Diamond, r = 1 . A
42. Both A and R are true but R is not correct explanation
Reason (R): Diamond is a diamagnetic material. Assertion (A): In a perfect capacitor, the current B.
of A
density is given by 0E0'rcos(t + 90), where r' C.A is true but R is false
A Both A and R are true and R is correct explanation of is real part of dielectric constant. D
. A A is false but R is true
.
Both A and R are true but R is not correct explanation Reason (R): In a perfect capacitor, dielectric losses are Answer & Explanation
B.
of A zero.
C.A is true but R is false Answer: Option C
D A Both A and R are true and R is correct explanation of
A is false but R is true
. . A Explanation:
Answer & Explanation Both A and R are true but R is not correct explanation
B.
of A Increase of B with I is not linear. Hence R is false.
Answer: Option A C.A is true but R is false
D View Answer Workspace Report Discuss in Forum
A is false but R is true
Explanation: .
Answer & Explanation 44.
For diamagnetic materials r = 1. Assertion (A): From the slope of the line in Figure, we
Answer: Option A can find permanent dipole moment of the molecules.
Explanation: Reason (R): Total polarization of a polyatomic gas is
given by P = N(ae + ai + 2p / 3kT)E.
If dielectric losses are zero, the current in capacitor
 Wood is non-magnetic.
Reason (R): .
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A Both A and R are true and R is correct explanation of
. A 47.
Both A and R are true but R is not correct explanation The apparent capacitance at a high angular frequency
B. of an air cored capacitor having capacitance C and
of A
C.A is true but R is false inductance L is given by
D
A is false but R is true A
.
A Both A and R are true and R is correct explanation of Answer & Explanation .
. A
Both A and R are true but R is not correct explanation B.
B. Answer: Option B
of A
C.A is true but R is false C.
Explanation:
D D
A is false but R is true
. .
E = EF, f(E) = 0.5.
Answer & Explanation Answer & Explanation

Answer: Option A Answer: Option B

Explanation: 46. Explanation:

If a piece of wood is placed in a magnetic field
The combination can be represented as L and C in
The slope of the line in figure is . A series.
the magnetic field will not be affected
.
Since the total polarization is as given by the the magnetic lines of force will bend towards the
B.
expression, we can find the permanent dipole moment piece
the magnetic lines of force will bend away from the .
of the molecules from the slope. C.
piece
View Answer Workspace Report Discuss in Forum D
the flux may increase or decrease Therefore, .
.
45. Answer & Explanation
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Assertion (A): If E is available energy state eV and EF
is Fermi level, then probability of energy state E being Answer: Option A
48.
occupied = 0.5. The number of valence electrons in donor impurity are
Explanation:
 A
5 B.4
. 2. Phosphorus Answer: Option A
D
C.3 1
. 3. Boron Explanation:
Answer & Explanation
4. Antimony No answer description available for this question. Let us
Answer: Option A discuss.
5. Arsenic
Explanation: View Answer Workspace Report Discuss in Forum
6. Induim
Donor impurity has 5 valence electrons (while silicon 2.
has 4 valence electrons). Select the correct answer using the following codes The temperature below which certain materials are
A antiferromagnetic and above which they are
1, 2, 3 paramagnetic is called
Hence donor impurity can donate electrons. .
B.1, 2, 4, 6
View Answer Workspace Report Discuss in Forum C.3, 4, 5, 6 A.Weiss temperature
D B.Curie temperature
49. 2, 4, 5 C.Neel temperature
.
In a true valence crystal, the bonding between the atoms Answer & Explanation D.None of the above
is accomplished by the sharing of valence electrons. Answer & Explanation
Answer: Option D
A Answer: Option C
True B.False
. Explanation:
Answer & Explanation Explanation:
Donor impurities have five valence electrons.
Answer: Option A No answer description available for this question. Let us
discuss.
Explanation:
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Sharing of valence electons is a characteristic of true SECTION 2
valence crystal. 3.
1. In metals, the average drift velocity of electron per unit
View Answer Workspace Report Discuss in Forum In crystalline solids, atoms are stacked in a regular field is called mobility.
manner.
50. A.True B.False
Which of the following are donor impurities? A.True B.False Answer & Explanation
Answer & Explanation
1. Gold Answer: Option A
 Explanation: 8.
Consider the following statement
6.
No answer description available for this question. Let us If an electric field is applied to an n type semiconductor
When a material becomes a superconductor, its
discuss. bar, the electrons and holes move in opposite directions
resistivity becomes
due to their opposite charges. The net currents is
View Answer Workspace Report Discuss in Forum A.very small
1. both due to electrons and holes with electrons as
B.zero
4. majority carriers
C.about 10% of normal value
Ferrites have
D.about 20% of normal value
2. sum of hole and electron currents
Answer & Explanation
A.a low copper loss
B.low eddy current loss 3. difference between electron and hole currents.
Answer: Option B
C.low resistivity
D.higher specific gravity compared to iron Which of above statements are correct?
Explanation:
Answer & Explanation A.1 only
B.1 and 2
A superconductor has zero resistance.
Answer: Option B C.2 only
D.3 only
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Explanation: Answer & Explanation
7.
Resistivity of ferrites is very high as compared to that of Answer: Option B
In a piezoelectric crystal, the application of mechanical
iron. Hence eddy curretns are much less. force will cause
Explanation:
View Answer Workspace Report Discuss in Forum A.plastic deformation of crystal
The net current is sum of currents due to holes and
B.magnetic dipoles in the crystal
5. electrons.
C.electrical polarization in the crystal
In intrinsic semiconductors, the number of free electrons
D.shift in Fermi level
is equal to the number of mobile holes. In n type materials, electrons are majority carriers.
Answer & Explanation
A.True B.False View Answer Workspace Report Discuss in Forum
Answer: Option B
Answer & Explanation
9.
Explanation:
Answer: Option A As the temperature of a pure silicon specimen is
increased
Piezoelectric materials permit conversion of mechanical
Explanation:
force into electrical energy.
A.the number of free electrons increases
No answer description available for this question. B.the number of holes decreases
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C.the number of holes increases
D.the number of free electrons and holes increases 10. C.A is true but R is false
Answer & Explanation Assertion (A): In many materials, dielectric D
A is false but R is true
polarization causes mechanical distortion. .
Answer: Option D Answer & Explanation
Reason (R): If dielectric polarization causes
Explanation: mechanical distortion then mechanical distortion must Answer: Option C
cause dielectric polarization.
No answer description available for this question. Let us Explanation:
discuss. A Both A and R are true and R is correct explanation of
. A No answer description available for this question.
View Answer Workspace Report Discuss in Forum Both A and R are true but R is not correct explanation
B.
of A