BJT

BJT stands for Bipolar Junction Transistor. BJT is the current controlled device.
As shown in the figure, there are P-N-P and N-P-N type of BJT transistors. The
symbols of these transistors are also depicted in the figure. There are three
terminals in a BJT device viz. emitter,base and collector.

Trans-conductance gm = vs W/d
Cutoff frequency fT = gm/(2pCgs)
Following are useful characteristics of BJT:
Its input impedance is low and output impedance is high.
Noisy device due to presence of minority carriers.
It is bipolar device as current flows due to both majority and minority carriers.
Thermal stability is lesser due to leakage current or reverse saturation current.
Doping in emitter is highest and in base it is lowest.
Area of collector is highest and that is base is lowest.

FET
FET stands for Field Effect Transistor. FET is the voltage controlled device.
Figure depicts FET symbols for P channel and N channel type.There are three
terminals in a FET device. viz. source, drain and gate. The source is the terminal
through which the carriers enter the channel. The drain is the terminal through
which carriers leave the channel.The gate is the terminal that modulates the
channel conductivity by application of voltage to this terminal.
FET is referred as unipolar transistor. In FET input voltage controls the output
current, here input current is usually negligible. This is the great merit of FET
when input can not supply much current.

Trans-conductance- gm = q Ie/kBT
Cutoff frequency- fT = 2Dn/WB2
Following are useful characteristics of FET which mentions difference between
BJT and FET features.
It is a high input impedance device about 100 MOhm and above.
FET has no offset voltage when used as switch unlike BJT.
FET is relatively immune to radiation but BJT is very sensitive.
It is a majority carrier device.
FET is less noisy compare to BJT. It is more suitable for input stages of low
level amplifiers.
FET provides greater thermal stability compare to BJT.
FET is a unipolar device.
Following are the main disadvantages(demerits) of FETs.
FET has relatively small gain bandwidth product compare to BJT.
FET suffers from greater susceptibility to damage and hence requires careful
handling.
Following table mentions difference between BJT(Bipolar Junction Transistor)
and FET(Field Effect Transistor) types.

BJT FET

High voltage gain Low voltage gain

Low current gain High current gain

Low input impedance Very high input impedance

Low output impedance High output impedance

Medium Noise Generation Low Noise generation

Medium switching time Fast switching time

Robust Easily damaged

Requires zero input to turn it "OFF" Some need an input to turn it "OFF"

It is a Current controlled device. It is a Voltage controlled device.

Cheap More expensive than BJT.

Easy to bias Difficult to bias