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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA2733GR
SWITCHING
P-CHANNEL POWER MOSFET

DESCRIPTION PACKAGE DRAWING (Unit: mm)


The PA2733GR is P-channel MOS Field Effect Transistor
8 5
designed for power management applications of notebook
1, 2, 3 : Source
computers and so on. 4 : Gate
5, 6, 7, 8: Drain

FEATURES
Low on-state resistance
RDS(on)1 = 38 m MAX. (VGS = 10 V, ID = 2.5 A) 1 4
6.0 0.3
4.4
RDS(on)2 = 53 m MAX. (VGS = 4.5 V, ID = 2.5 A)

1.44
5.37 MAX. 0.8

1.8 MAX.
Low Ciss: Ciss = 870 pF TYP.

+0.10
0.05
Built-in gate protection diode

0.15
0.5 0.2
Small and surface mount package (Power SOP8)
0.05 MIN.
1.27 0.78 MAX. 0.10

+0.10
0.40 0.12 M
ORDERING INFORMATION
0.05

PART NUMBER PACKAGE


PA2733GR-E1 Power SOP8
Note
PA2733GR-E1-A Power SOP8 EQUIVALENT CIRCUIT
PA2733GR-E2 Power SOP8
Note Drain
PA2733GR-E2-A Power SOP8
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
Body
Gate Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate
Gate to Source Voltage (VDS = 0 V) VGSS m20 V Protection
Diode Source
Drain Current (DC) ID(DC) m5 A
Note1
Drain Current (pulse) ID(pulse) m20 A
Note2
Total Power Dissipation PT1 1.1 W
Note2
Total Power Dissipation (PW = 10 sec) PT2 2.5 W
Channel Temperature Tch 150 C
Storage Temperature Tstg 55 to +150 C
Notes 1. PW 10 s, Duty Cycle 1%
2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.

Document No. G17460EJ2V0DS00 (2nd edition) 2005


Date Published November 2005 NS CP(K)
Printed in Japan The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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PA2733GR

ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.)


CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 A


Gate Leakage Current IGSS VGS = m20 V, VDS = 0 V m10 A
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 2.5 V
Note
Forward Transfer Admittance | yfs | VDS = 10 V, ID = 2.5 A 2.5 S
Note
Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 2.5 A 30 38 m
RDS(on)2 VGS = 4.5 V, ID = 2.5 A 39 53 m
Input Capacitance Ciss VDS = 10 V 870 pF
Output Capacitance Coss VGS = 0 V 200 pF
Reverse Transfer Capacitance Crss f = 1 MHz 150 pF
Turn-on Delay Time td(on) VDD = 15 V, ID = 2.5 A 7.7 ns
Rise Time tr VGS = 10 V 9.5 ns
Turn-off Delay Time td(off) RG = 10 108 ns
Fall Time tf 64 ns
Total Gate Charge QG VDD = 24 V 18 nC
Gate to Source Charge QGS VGS = 10 V 2.6 nC
Gate to Drain Charge QGD ID = 5 A 5.8 nC
Note
Body Diode Forward Voltage VF(S-D) IF = 5 A, VGS = 0 V 0.8 V
Reverse Recovery Time trr IF = 5 A, VGS = 0 V 98 ns
Reverse Recovery Charge Qrr di/dt = 100 A/s 93 nC

Note Pulsed

TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE

D.U.T.
D.U.T.
IG = 2 mA RL
RL VGS()
VGS 90%
10%
VGS
Wave Form
RG 0 PG. 50 VDD
PG. VDD
VDS()
90% 90%
VGS() VDS
0 10% 10%
VDS 0
Wave Form

td(on) tr td(off) tf

= 1 s ton toff
Duty Cycle 1%

2 Data Sheet G17460EJ2V0DS

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PA2733GR

<R> TYPICAL CHARACTERISTICS (TA = 25C)

DERATING FACTOR OF FORWARD BIAS FORWARD BIAS SAFE OPERATING AREA


SAFE OPERATING AREA
120 -100
dT - Percentage of Rated Power - %

RDS( on) Limited (at V GS = 10 V)


ID(pulse) PW
100 =
10

ID - Drain Current - A
-10 ID(DC) 0

1
10 s

m
80 m

s
s

10
0
10

m
s
s
60 -1

40 TA = 25C
-0.1 Single Pulse
20 Mounted on a galass epoxy board
(1 inch 1 inch 0.8 mm)
0 -0.01
0 25 50 75 100 125 150 175 -0.01 -0.1 -1 -10 -100

TA - Ambient Temperature - C VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH


1000
rth(t) - Transient Thermal Resistance - C/W

100

Rth(ch-A) = 114C/W
10

Single pulse, TA = 25C


Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm)
0.1
100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s

DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS


DRAIN TO SOURCE VOLTAGE
-25 -100

-20
ID - Drain Current - A

ID - Drain Current - A

-10
V GS = 10 V Tch = 150C
-15 75C
4.5 V 25C
-1
40C
-10

-0.1
-5
V GS = 10 V
Pulsed
Pulsed
0 -0.01
0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 0 -1 -2 -3 -4
VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V

Data Sheet G17460EJ2V0DS 3

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PA2733GR

GATE CUT-OFF VOLTAGE vs. FORWARD TRANSFER ADMITTANCE vs.


CHANNEL TEMPERATURE DRAIN CURRENT

| yfs | - Forward Transfer Admittance - S


-2.5 10
Tch = 150C
VGS(off) - Gate Cut-off Voltage - V

75C
-2 25C
40C
-1.5
1
-1

-0.5 VDS = 10 V VDS = 10 V


ID = 1 mA Pulsed
0 0.1
-50 0 50 100 150 -0.01 -0.1 -1 -10 -100

Tch - Channel Temperature - C ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m

80 RDS(on) - Drain to Source On-state Resistance - m 80

60 60

4.5 V
40 40

VGS = 10 V
20 20
Pulsed
Pulsed ID = 2.5 A
0 0
-0.1 -1 -10 -100 0 -5 -10 -15 -20
ID - Drain Current - A VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
CHANNEL TEMPERATURE
RDS(on) - Drain to Source On-state Resistance - m

60 0000
Ciss, Coss, Crss - Capacitance - pF

4.5 V
Ciss
40 1000

VGS = 10 V Coss

20 100
Crss
ID = 2.5 A
Pulsed VGS = 0 V
f = 1 MHz
0 10
-50 0 50 100 150 -0.1 -1 -10 -100
Tch - Channel Temperature - C VDS - Drain to Source Voltage - V

4 Data Sheet G17460EJ2V0DS

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PA2733GR

SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS


1000 -12

VGS - Gate to Source Voltage - V


td(on), tr, td(off), tf - Switching Time - ns

-10

td (off) VDD = 24 V
100 -8 15 V
6 V
tf -6
tr
10 -4

td (on) VDD = 15 V
-2
VGS = 10 V ID = 5 A
RG = 10
1 0
-0.1 -1 -10 -100 0 5 10 15 20

ID - Drain Current - A QG - Gate Charge - nC

SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs.


DIODE FORWARD CURRENT
100 1000
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A

10
VGS = 10 V

0V
1 100

0.1
di/dt = 100 A/s
Pulsed VGS = 0 V
0.01 10
0 0.2 0.4 0.6 0.8 1 1.2 0.1 1 10 100

VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A

Data Sheet G17460EJ2V0DS 5

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PA2733GR

The information in this document is current as of November, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1

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