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5, MAY 2001
Manuscript received November 29, 2000; revised February 6, 2001. The re-
III. RESULTS AND DISCUSSIONS
view of this letter was arranged by Editor K. De Meyer. Fig. 1 shows the normalized capacitance characteristics as a
The authors are with the Mixed-Signal-Products Process Development
Group, Texas Instruments Deutschland, Freising D-85356, Germany. function of frequency for nitride and oxide dielectric MIM ca-
Publisher Item Identifier S 0741-3106(01)03700-4. pacitors. It can be seen that the nitride capacitor exhibits signif-
07413106/01$10.00 2001 IEEE
BABCOCK et al.: ANALOG CHARACTERISTICS OF MIM CAPACITORS 231
It has become therefore imperative to use LPCVD oxide di- [5] P. Zurcher, P. Alluri, P. Chu, P. Duvallet, C. Happ, R. Henderson, J. Men-
electrics for precision analog circuits and to apply PECVD ni- donca, M. Kim, M. Petras, M. Raymond, T. Remmel, D. Roberts, B.
Steimle, J. Stipanuk, S. Straub, T. Sparks, M. Tarabbia, H. Thibieroz,
tride capacitors where capacitance per unit area is more impor- and M. Miller, Integration of thin film MIM capacitors and resistor into
tant, or when the thermal budget becomes prohibitive. copper metallization based RF-CMOS and Bi-CMOS technologies, in
IEDM Tech. Dig., 2000, pp. 153156.
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and H. Iwai, High performance MIM capacitor for RF BiCMOS/CMOS
LSIs, in Proc. IEEE Bipolar/BiCMOS Circuits Technol. Meeting, Sept.
ACKNOWLEDGMENT 2000, pp. 133136.
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[9] J. L. McCreary, Matching properties, and voltage and temperature de-
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