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Discrete circuits: the elements are manufactured separately and are mounted on a printed
circuit board.
Integrated circuit: the elements and their interconnections are manufactured in a single
semiconductor crystal.
The elements in an integrated circuit and the interconnections are realized by applying of a
sequence of processing steps like : photolithography, doping, diffusion.
Strong restrictions about the values of the available elements in integrated circuit. See table 1.
Inductors
10nH .. 1H 1nH .. 1H; large area consuming
Tolerances 1% to 20% Tolerances: max few percents
BJTs and FETs
Wide variety of types Restricted types available
Large unit-to-unit parameter Good matching between devices in a chip
variation
I ref (7.4)
vBE of Q1 = vBE of Q2. Thus I C1 = I C 2 =
1+ 2 /
I B1 = I B 2 (7.1)
I C1 = I C 2 I ref (7.5)
I C1 = I C 2 = I B1 (7.2)
VCC VBE (7.6)
I ref =
R
I ref = I C1 + I B1 + I B 2 (7.3)
Compliance range: the range of the voltage in the flat part of the V-A characteristics of the
current mirror, in which the current is approximately constant.
Dynamic output resistance:
1
I
ro = C 2 (7.7)
VCE 2
Figure 7.2 Emitter follower with bias current source. The high dynamic resistance of the
current mirror gives high input impedance of the emitter follower. The major restriction for
the input impedance comes the load resistance RLoad.
A2
IC 2 = I C1 (7.8)
A1
Figure 7.15 NMOS current mirror. Figure 7.14 JFET as a current source. Since the device can operate with zero
VGS, the fixed VGS is achieved by short connection between gate and source.
vo 2 = VCC RC iC 2 (7.24)
iE1 = iE 2 = I EE / 2 (7.27)
iC1 = iC 2 = I EE / 2 (7.28)
iC = i B
Thus iC1 increases and iC2 decreases.
v o1 = VCC iC 1 RC
v o 2 = VCC iC 2 RC
Thus vo1 decreases and vo2 increases.
v od = v o1 v o 2
The amplitude of vod is doubled amplitude
of vo1 and vo2.
Figure 7.23 Basic BJT differential amplifier with waveforms. Detailed small-signal analysis shows that
the differential voltage gain of the
emitter-coupled pair is equal to the
voltage gain of a single CE amplifier
having the same BJT and RC.
I EE
iC1 = (7.45)
1 + exp( vid / VT )
Figure 7.27 Differential amplifier with emitter degeneration Figure 7.28 Voltage transfer characteristic with emitter
resistors. degeneration resistors. REF = 40(VT/IEE). The amplifier is
linear for |vid| < 20VT.