1. How many terminals does a diode have?

A) 1
B) 2
C) 3
D) 4

2. What is the resistor value of an ideal diode in the region of conduction?

A) 0
B) 5 k
C) Undefined
D) Infinity

3. What is the state of an ideal diode in the region of nonconduction?

A) An open circuit
B) A short circuit
C) Unpredictable
D) Undefined

4.The diode _____.

A) is the simplest of semiconductor devices

B) has characteristics that closely match those of a simple switch
C) is a two-terminal device
D) All of the above

5.The ideal diode is a(n) _____ circuit in the region of nonconduction.

A) open
B) short

6.Which of the following is an atom composed of?

 A) Electrons
B) Protons
C) Neutrons
D) All of the above

7. How many orbiting electrons does the germanium atom have?

A) 4
B) 14
C) 32
D) 41

8.How many valence electrons does a silicon atom have?

A) 1
B) 2
C) 3
D) 4

9.One eV is equal to _____ J.

A) 6.02 1023
B) 1.6 1019
C) 6.25 1018
D) 1.66 1024

10. Which of the following elements is most frequently used for doping pure Ge or Si?

A) Boron
B) Gallium
C) Indium
D) All of the above

11.The diffused impurities with _____ valence electrons are called donor atoms.
 A) 4
B) 3
C) 5
D) 0

12.In what state is a silicon diode if the voltage drop across it is about 0.7 V?

A) No bias
B) Forward bias
C) Reverse bias
D) Zener region
13.What unit is used to represent the level of a diode forward current I F?
A) pA
B) nA
C) A
D) mA

14.Which of the following ratings is true?

A) Si diodes have higher PIV and narrower temperature ranges than Ge diodes.
B) Si diodes have higher PIV and wider temperature ranges than Ge diodes.
C) Si diodes have lower PIV and narrower temperature ranges than Ge diodes.
D) Si diodes have lower PIV and wider temperature ranges than Ge diodes.

15.It is not uncommon for a germanium diode with an Is in the order of 12 A at 25C to have leakage
current of 0.1 mA at a temperature of 100C.

A) True
B) False

16. Calculate static resistance RD of a diode having ID = 30 mA and VD = 0.75 V.

A) 25
B) 40
 C) 0.04
D) 0.025

17. Calculate ID if RD = 30 and VD = 0.84 V.

A) 28 mA
B) 0.028 mA
C) 2.8 A
D) 280 A

18. Refer to Figure 1.27. Calculate the dynamic resistance rd of a diode having ID = 27.5 mA.

A) 0
B) 2
C) 5
D) 26

19. Determining rd to a high degree of accuracy from a characteristic curve is very accurate.

A) True
B) False

20. The _____ diode model is employed most frequently in the analysis of electronic systems.

A) ideal device
B) simplified
C) piecewise-linear

21.Calculate the power dissipation of a diode having ID = 40 mA.

A) 28 mW
B) 28 W
C) 280 mW
D) Undefined
22. Which capacitance dominates in the reverse-bias region?

A) depletion
B) conversion
C) 40 Diffusion
D) 140 None of the above

23. Which capacitance dominates in the forward-bias region?

A) Diffusion
B) Transition
C) Depletion
D) None of the above

24. At what kind of operating frequency diffusion or transition is a capacitor represented in parallel with
the ideal diode?

A) Low frequency
B) Moderate frequency
C) Mid frequency
D) Very high frequency

25. What is the value of the transition capacitance for a silicon diode when VD = 0?

A) 1 pF
B) 3 pF
C) 5 pF
D) 10 pF

26. Which of the following devices can check the condition of a semiconductor diode?

A) Digital display meter (DDM)

B) Multimeter
C) Curve tracer
 D) All of the above

27. What does a high resistance reading in both forward- and reverse-bias directions indicate?

A) A good diode
B) An open diode
C) A shorted diode
D) A defective ohmmeter

28. The condition of a semiconductor diode can be determined quickly using a _____.

A) DDM
B) VOM
C) curve tracer
D) Any of the above

29. Determine the nominal voltage for the Zener diode at a temperature of 120 C if the nominal voltage
is 5.1 volts at 25 C and the temperature coefficient is 0.05%/ C.

A) 4.6 V
B) 4.86 V
C) 5.1 V
D) 5.34 V

30. Calculate the temperature coefficient in %/ C of a 10-V nominal Zener diode at 25 C if the nominal
voltage is 10.2 V at 100 C.

A) 0.0238
B) 0.0251
C) 0.0267
D) 0.0321

31. In which of the following color(s) is (are) LEDs presently available?

A) Yellow
 B) White
C) Orange
D) All of the above

32.What is the maximum power rating for LEDs?

A) 150 mW
B) 500 mW
C) 1 W
D) 10 W

33. In which of the following is the light intensity measured?

A) Candela
B) Efficacy
C) Flux
D) Illumination

34. What is the range of the operating voltage level for LEDs?

A) 512 mV
B) 1.73.3 V
C) 512 V
D) 2025 V

35. In general, LEDs operate at voltage levels from _____ V to _____ V.

A) 1.0, 3.0
B) 1.7, 3.3
C) 0.5, 4.0
D) None of the above

FILL IN THE BLANK QUESTIONS

1. A(n) _____ is the simplest of semiconductor devices.

A) diode
B) transistor
C) operational amplifier
D) SCR

2. The term _____ is often used when comparing the resistance level of materials.

A) permittivity
B) inductivity
C) conductivity
D) resistivity

3. In the atomic lattice the _____ and _____ form the nucleus.

A) electrons, neutrons
B) electrons, protons
C) neutrons, protons
D) None of the above

4. An increase in temperature of a semiconductor can result in a _____ in the number of free electrons in
the material.

A) substantial increase
B) substantial decrease
C) slight decrease
D) no change

5. Ge and Si have a(n) _____ coefficient in forward bias.

A) positive temperature
B) negative temperature
C) absolute temperature
D) temperature free
6. Any electron that has left its parent atom has _____ energy state relative to any electron in the atomic
structure.

A) the same
B) a lower
C) a higher
D) an undefined

7. Introducing those impurity elements that have _____ valence electrons creates the n-type material.

A) 0
B) 3
C) 4
D) 5

8. In n-type material the _____ is called the majority carrier.

A) electron
B) hole
C) proton
D) neutron

9. The diffused impurities with _____ valence electrons are called acceptor atoms.

A) 0
B) 3
C) 4
D) 5

10. The reverse-saturation current level is typically measured in _____.

A) pA
B) A
C) mA
D) A

11. The depletion width _____ in the forward bias, which results in having a majority flow across the
junction.
 A) widens
B) remains unchanged
C) shrinks
D) widens and shrinks alternatively

12. The forward characteristics curve of a diode grows in _____ form.

A) linear
B) exponential
C) logarithmic
D) sinusoidal

13. The potential at which the characteristics curve vertical rise occurs is commonly referred to as the
_____.

A) offset
B) threshold
C) firing potential
D) All of the above

14. The reverse saturation current Is will just _____ in magnitude for every 10 C increase in temperature.

A) double
B) remain the same
C) halve
D) triple

15. Diodes are connected _____ to increase the current-carrying capacity.

A) in series
B) in parallel
C) in parallel-series
D) None of the above

16. The _____ the current through a diode, the _____ the dc resistance level.

A) higher, lower
B) lower, lower
 C) lower, higher
D) higher, higher

17. Varying the _____ can control the location of the Zener region.

A) forward current
B) doping levels
C) forward voltage
D) dc resistance

18. The test current in a Zener diode IZT is the current defined by the _____ power level.

A) 0.25
B) 0.5
C) 0.75
D) 1.00

19. The heavier the current in a Zener diode in reverse bias, _____ dynamic resistance value.

A) the more the

B) the less the
C) there is substantially more
D) there is no change in the

20. The intensity of LED is greatest at _____ degrees and the least at _____ degrees.

A) 0, 90
B) 45, 90
C) 0, 45
D) 90, 180

21. The temperature coefficient can be _____ for different Zener levels.

A) positive
B) negative
C) zero
D) All of the above
22. The reverse recovery time of most commercial switching diodes is in the range of _____.

A) picoseconds
B) a few nanoseconds
C) several microseconds
D) milliseconds

23. The ac resistance of a diode is the _____ of the characteristic curve at the Q-point of operation.

A) reciprocal of the slope

B) slope
C) midpoint
D) average value

24. Generally the value of ac resistance is _____ the value of dc resistance at the same operating point.

A) smaller than
B) larger than
C) the same as
D) unrelated to

25. The reverse-bias current _____ with the increase of temperature.

A) decreases
B) increases
C) remains the same
D) None of the above

CHAPTER 2

Choose the letter of the best answer in each questions.

1. Use the information provided here to determine the value of IDQ.

A) 0 mA
B) 4.3 mA
C) 5 mA
D) 10 mA
2. In a particular problem, which mode has the highest level of IDQ?

A) Ideal
B) Approximate equivalent
C) Exact mode using characteristic curve
D) None of the above
3. Which diode(s) has (have) a zero level current and voltage drop in the
ideal model?
A) Si
B) Ge
C) Both Si and Ge
D) Neither Si nor Ge
4. Determine the current level if E = 15 V and R = 3 k.
 A) 0A
B) 4.76 mA
C) 5 mA
D) 5A
5. Determine the voltage across the resistor.

A) 0V
B) 0.09 V
C) 0.2 V
D) 0.44 V
6. Determine the value of the load resistor.

A) RL = 5 k
B) RL = 5.5 k
C) RL = 6 k
D) None of the above
7. Determine ID.

A) 0 mA
B) 1.893 mA
C) 2.036 mA
D) 2.143 mA
8. Determine V2.

A) 3.201 V
B) 0V
C) 4.3 V
D) 1.371 V
9. A diode is in the "_____" state if the current established by the applied
sources is such that its direction matches that of the arrow in the diode
symbol, and VD 0.7 V for Si and VD 0.3 V for Ge.
A) of
B) on
C) neutral
D) quiescent
10. An open circuit can have any voltage across its terminals, but the current
is always _____.
 A) 5A
B) 0A
C) 1A
D)
11. A short circuit has a _____ drop across its terminals, and the current is
limited only by the surrounding network.
A) 5V
B) 0V
C) 1V
D)
12. Determine ID2.

A) 29.40 mA
B) 30.30 mA
C) 14.70 mA
D) None of the above
13. Determine ID1.

A) 0 mA
B) 29.40 mA
C) 14.70 mA
D) 14.09 mA
14. Determine ID2.

A) 6.061 mA
B) 0.7 mA
C) 3.393 mA
D) 3.571 mA
15. Determine the current through each diode if E1 = E2 = 0 V.

A) 4.65 mA
B) 9.3 mA
C) 18.6 mA
D) 0.7 mA
16. Determine Vo if E1 = E2 = 10 V.

A) 9.3 V
B) 10 V
C) 10 V
D) 0V
17. What is the logic function of this circuit?

A) Positive logic AND gate

B) Positive logic OR gate
C) Negative logic AND gate
D) Negative logic OR gate
18. What is the logic function of this circuit?

A) Positive logic AND gate

B) Positive logic OR gate
C) Negative logic AND gate
D) Negative logic OR gate
19. What best describes the circuit?

A) Full-wave rectifier
B) Half-wave rectifier
C) Clipper
D) Clamper
20. Determine the peak value of the current through the load resistor.

A) 2.325 mA
B) 5 mA
C) 1.25 mA
D) 0 mA
21. Determine the average value of the current through the load resistor.

A) 2.5 mA
B) 0 mA
C) 1.37 mA
D) 1.479 mA
22. What best describes the circuit?

A) Full-wave rectifier
B) Half-wave rectifier
C) Clipper
D) Clamper
23. List the categories of clippers.

A) Series
B) Parallel
C) Series and parallel
D) None of the above
24. Determine the peak value of the output waveform.

A) 25 V
B) 15 V
C) 25 V
D) 15 V
25. Determine the peak for both half cycles of the output waveform.

A) 16 V, 4 V
B) 16 V, 4 V
C) 16 V, 4 V
D) 16 V, 4 V
26. What best describes the circuit?

A) Full-wave rectifier
B) Half-wave rectifier
C) Clipper
D) Clamper
27. Determine the total discharge time for the capacitor in a clamper having
C = 0.01 F and R = 500 k.
A) 5 ms
B) 25 ms
C) 2.5 ms
D) 50 ms
28. Calculate IL and IZ.

A) 2 mA, 0 mA
B) 4 mA, 2 mA
C) 2 mA, 2 mA
D) 2 mA, 4 mA
29. With this Zener diode in its "on state," what is the level of IZ for the
maximum load resistance?

A) 0 mA
B) Undefined
C) Equal to IRL
D) IZM
30. In a voltage regulator network with fixed RL and R, what element dictates
the minimum level of source voltage?
A) VZ
B) IZ
C) IZM
D) None of the above
31. Which element dictates the maximum level of source voltage?

A) VZ
B) IZM
C) IZ
D) None of the above
32. What is the peak inverse voltage across each diode in a voltage doubler?
A) Vm
B) 2Vm
C) 0.5Vm
D) 0.25Vm
33. What is the voltage measured from the negative terminal of C4 to the
negative terminal of the transformer?

A) 10 V
B) 20 V
C) 10 V
D) 20 V
34. In a voltage-multiplier circuit, the number of diodes is directly
proportional to the multiplicative voltage factor.
A) True
B) False
35. Rectifiers are commonly used in battery chargers.

A) True
B) False

Fill-in-the-blanks Questions
1. The intersection of the load line with the characteristic curve determines
the _____ of the system.
A) point of operation
B) load-line analysis
C) characteristic curve
D) forward bias
2. The slope of the load line depends on the _____.

A) type of the diode used

B) characteristic curve
C) load resistor
D) source voltage
3. The load line is defined by the _____ and a characteristic curve is defined
by the _____.

A) quiescent point, device

B) device, network
C) network, device
D) None of the above
4. The quiescent point (Q-point) is defined by a(n) _____.

A) ac network
B) dc network
C) ac and dc network
D) None of the above
5. The x-intercept of the load line with the characteristic curve is determined
by the _____.
 A) load resistor
B) diode
C) source voltage and the load resistor
D) source voltage
6. The source voltage must be _____ the voltage drop across the diode to
conduct the diode.
A) larger than
B) smaller than
C) the same as
D) None of the above
7. As the load resistor increases, the slope of the dc load line and the levels
of diode current _____.
A) increase
B) decrease
C) remain unchanged
D) are unpredictable
8. A germanium diode is approximated by _____ equivalent for voltages less
than 0.3 V.
A) a short circuit
B) a series circuit
C) a parallel circuit
D) an open circuit
9. A diode is in the _____ state if the current established by the applied
sources is such that its direction matches that of the arrow in the diode
symbol and VD > 0.7 V.
A) of
B) reverse bias
C) on
D) transition
10. The combination of a short circuit in series with an open circuit always
results in a(n) _____ circuit.
A) open
 B) short
C) neither short nor open
D) unknown
11. The absence of the Si or Ge and VD label on a diode denotes _____
notation.
A) approximate model
B) ideal model
C) exact model
D) None of the above
12. The process of removing one-half the input signal to establish a dc level
is called _____.
A) rectifier
B) full-wave rectifier
C) half-wave rectifier
D) filtering
13. The dc voltage level of a silicon diode is _____ its ideal model.

A) smaller than
B) larger than
C) the same as
D) None of the above
14. The PIV rating of the diodes in a full-wave rectifier must be larger than
_____ Vm.
A) 0.318
B) 0.636
C) 2
D) 1
15. For the ideal diode the transition between states will occur at the point
on the characteristic curve when VD = _____ V and ID = _____ A.
A) 0.3, 0
B) 0, 0
C) 0.7, 0
 D) 0.7, 0.3
16. A clamping network must have _____.

A) a capacitor
B) a diode
C) a resistive element
D) All of the above
17. The ratio of the total swing of the output of a clamper to its input total
swing is _____.
A) 1
B) 2
C) 0.5
D) 0
18. For the "of" state of a Zener diode, the voltage across the diode should
be _____.
A) greater than VZ
B) zero
C) less than VZ but greater than zero
D) None of the above
19. Once the Zener diode is in the "on" state, VZ is always _____ VL.

A) larger than
B) smaller than
C) the same as
D) None of the above
20. Zener diodes are used in regulator networks to _____.

A) generate voltage
B) consume power
C) maintain a fixed voltage across the load resistor
D) protect the load
21. With the Zener diode in the "on" state, increasing IL will _____ IZ and
_____IR.

A) decrease, increase
B) increase, decrease
C) decrease, keep the same level of
D) increase, keep the same level of
22. A Zener diode is in a _____ impedance region in the forward bias while it
has a _____ impedance region in the reverse bias.
A) very large, low
B) very large, very large
C) low, low
D) low, very large
23. In a half-wave voltage doubler, the voltage across output capacitor
C2 drops across the load during the _____ half cycle and the capacitor is
recharged up to _____ during the _____ half cycle.
 A) negative, 2Vm, positive
B) positive, Vm, negative
C) positive, 2Vm, negative
D) negative, Vm, positive
24. The full-wave voltage doubler provides _____ filtering action than (as) the
half-wave voltage doubler.
A) better
B) poorer
C) the same
D) None of the above
25. In this voltage multiplier, measuring from the top of the transformer
winding will provide _____ multiples of Vm at the output, whereas measuring
the output voltage from the bottom of the transformer will provide _____
multiples of the peak Vm.

A) odd, even
B) even, odd
C) odd, odd
D) even, even