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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
70 W GaN-HEMT Ku-Band Power Amplifier
in MIC Technology
Daniel Maassen, Student Member, IEEE, Felix Rautschke, Student Member, IEEE,
Florian Ohnimus, Lothar Schenk, Uwe Dalisda, and Georg Boeck, Fellow, IEEE
Abstract In this paper the design, implementation, and
experimental results of a Ku-band 70 W GaN-HEMT power
amplifier (PA) for satellite communication are presented.
A two-stage design approach with two 250 nm bare-die devices
has been chosen to achieve a considerably high saturated gain
of 15 dB over the whole extended Ku-band (13.7514.5 GHz).
The circuit was realized in a hybrid microwave integrated
circuit technology on an alumina substrate. The PA shows a
measured performance of more than 50 W output power for
a continuous-wave signal with a power-added efficiency (PAE)
higher than 23%. Modulated measurements demonstrate an
average output power of more than 30 W (70 W peak) and 21%
PAE, while holding the Eutelsat linearity requirements.
Index Terms GaN, HEMTs, microwave circuits, power ampli-
fiers (PAs), predistortion linearizers, satellite communications.
I. I NTRODUCTION
S ATELLITE services are widely used for time-sensitive
and critical communications. Traditional Ku-band SatCom
becomes interesting, especially for very small aperture
terminals (VSAT) due to an increasing number of satellite
launches. GaN-HEMT technology can therefore play a major
role in lowering the costs of block upconverters (BUC)
within VSAT, replacing the widely used traveling wave tube
amplifier (TWTA). Modern 250 nm GaN/SiC-HEMT device
technology is able to achieve high power density with accept-
able high transition frequencies [1]. Research activities in
the Ku-band and K-band focus on monolithic microwave
integrated circuits (MMIC) up to a certain power level of
about Pout 25 W, where the bare-die size and therefore the
costs are reasonable [2][4]. For tasks that go beyond that
level, the approach is similar to base station amplifiers in
the mobile market. A bare-die as power bar gets matched
externally as microwave integrated circuit (MIC). This leads
to a considerable area and cost reduction for the monolithic
process technology.
Manuscript received May 23, 2016; revised October 2, 2016; accepted
November 27, 2016.
D. Maassen and F. Rautschke are with the Department of Microwave
Engineering, Berlin Institute of Technology, 10587 Berlin, Germany (e-mail:
daniel.maassen@tu-berlin.de).
F. Ohnimus, L. Schenk, and U. Dalisda are with Rohde & Schwarz GmbH
& Co. KG, 12489 Berlin, Germany.
G. Boeck is with the Department of Microwave Engineering, Berlin
Institute of Technology, 10587 Berlin, Germany, and also with the Ferdinand
Braun Institute, Leibniz-Institut fuer Hoechstfrequenztechnik, 12489 Berlin,
Germany.
Color versions of one or more of the figures in this paper are available
online at http://ieeexplore.ieee.org.
Digital Object Identifier 10.1109/TMTT.2016.2636151
0018-9480 2016 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.
1
At Ku-band frequencies the parasitic elements become
dominant. The optimum source and load impedances are only
a fraction of that in the lower GHz range and therefore
matching gets complicated. Assembling tolerances become an
issue as well. Nevertheless, high output power is already stated
in [5][7], suffering from a low gain of the already uncondi-
tionally stable devices in that frequency range. In addition,
the gain decreases even more in saturation due to the constant
AMAM decrease in GaN devices [8].
In our previous studies of the one-stage amplifier, our
complaint was of low power gain [9] that significantly reduces
the power-added efficiency (PAE). In this paper, a two-stage
design with two bare-dies is stated. The matching is realized
hybrid on an Al2 O3 substrate using distributed transmission
line (TL) combiners [10] as well as a busbar [11], [12]
for supplying the dc. This paper is organized as follows: in
Section II the device technology, including the device model
and the parasitic constraints are introduced. An extensive
design procedure for the matching networks is presented in
Section III. The realization and the measurement results are
shown in Sections IV and V and the conclusions are given
in Section VI.
II. P RELIMINARY D ESIGN C ONSIDERATIONS
A. Transistor Technology
For achieving high power in the Ku-band a 250 nm GaN
on SiC 40 V bare-die from the CREE V4 process has been
chosen. A bare-die mounting technique is necessary to
circumvent the effects of the package. The available bare-die
sizes are scaled from 1.2, 4.8, up to 14.4 mm total gate
width. The process is able to deliver Pout,sat = 5 W/mm
with I D,sat = 0.9 A/mm at V(BR)DSS 100 V and
Vpinch-off = 3.1 V. The max. ac-transconductance is
gm 580 mS/mm for VGS = 2.65 V at 14 GHz.
The parasitic capacitances are Cgs = 1.6 pF/mm,
Cds = 0.29 pF/mm and Cgd = 0.41 pF/mm [13]. To obtain
a high output power of Pout 50 W the largest device
CGHV1J070D has been chosen. It is specified with a
Pout,sat = 70 W and an I D,max = 7 A for a size of 4.8 mm
0.8 mm. The device has 12 gate- and 12 drain-pads on
the top as well as the source connection through vias at the
bottom. Its 12 gate-pads are resistively connected on the
bare-die to lower odd-mode instabilities. The 12 drain-pads
are connected to a common potential as well. Especially, the
high total input and output capacitances of Cgs = 24 pF and
Cds = 4.2 pF make the matching toward high frequencies
very challenging.
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2 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Fig. 1. Deembedding from the intrinsic dc impedance to the optimum load
impedance.
TABLE I
S IMULATED O PTIMUM S OURCE AND L OAD I MPEDANCES
(VDS = 40 V; ID Q = 0.3 A)
B. Device Model
A large-signal device model is supplied by the manufac-
turer including nonlinear behavior and self-heating. A detailed
description of the modeling techniques used by the manufac-
turer is given in [1]. Small-signal analysis has shown that the
device gets unconditionally stable above 12.5 GHz. Therefore,
the possible gain at a center frequency of 14 GHz is already
decreased to 9 dB and degrades further with 20 dB/decade.
For the drain current of a maximum gm, the extrinsic transit
frequency is f T = 40 GHz with a maximum oscillation
frequency of f MAX = 48 GHz. The model of the 70 W device
with 14.4 mm total gate width behaves exactly like 12 times a
1.2 mm model in parallel. This leads to the assumption that the
model itself is upscaled. Vice versa, 12 times a 1.2 mm model
can be seen as 12 times a transistor cell and can be used for
further analysis to have a deeper insight into cell temperature,
cell current, cell voltage or the resulting cell loadline.
C. Optimum Impedances
The optimum loadline resistance that represents the intrinsic
current source (for Class A) can be calculated [14] as
VDS,OP Vknee 37 V
RDC = Ropt = = = 10.5 =Z o int.
0.5 Imax 3.5 A
(1)
The additional intrinsic capacitance Cds as well as the pad
and interconnection inductance transform the real Z o int to
the optimum load impedances Z o ext . Considering a power
match the impedances looking into the matching circuit need
to be Z o ext (see Fig. 1). This simple approach represents a
very good approximation to the simulated optimum source
and load impedances over frequency that are stated in Table I.
Fig. 2. Simulated optimum loadpull impedances Z Load for Pout,max =
48 dBm within 13.7; 14; 14.25; 14.5 GHz. Furthermore, multifrequency
loadpull contours (MuFLoCs) are shown for Pout in (dBm) and PAE in (%).
It can be noted that the optimum load impedances are
extremely low (0.4 ) with little dependence over the
frequency range 1315 GHz. However, as shown in Fig. 2,
a small change in impedance results is a huge difference
with respect to Pout and PAE. To realize a matching over the
specified frequency range F (13.7514.5 GHz) one would be
interested in, e.g., the Pout dependence versus F. Classical
source and loadpull contours are only valuable for one
frequency. Using the center point of these contours for each
point in F as optimum impedances, the result will be a
huge restriction for the design. Hereby, we have defined
multifrequency source and loadpull contours (MuFLoC),
which differ from single frequency ones in that they represent
the least intersection of all single frequency contours with the
same power or PAE level, respectively. A loadpull matrix,
e.g., [Pout, f1 ] that represents all Pout values over a certain
complex range of Z Load can be defined for fixed biasing and
input power conditions of f1 . By generating this matrix over
all in-band frequencies f 1 . . . f n it is possible to calculate the
lowest Pout value matrix [Pout,F ]
[Pout, F ] = [Pout, f1 ] [Pout, f2 ] . . . [Pout, f n ]. (2)
In other words, e.g., the Pout = 47 dBm contour in Fig. 2
represents the impedance area where an output power of at
least 47 dBm from 13.75 to 14.5 GHz can be expected. The
same principle applies for PAE
[PAE F ] = [PAE f1 ] [PAE f2 ] . . . [PAE fn ]. (3)
In Fig. 2, classical frequency-dependent loadpull contours for
the maximum output power are shown as well as frequency-
independent contours in the range of F. It can be seen that
the frequency-independent power contour of, e.g., 47 dBm
represents the least intersection of all frequency-dependent
contours.
Simulation showed that the influence of a second harmonic
matching for the efficiency of the power amplifier (PA) can
be neglected. The bare-die has a maximum available gain of
only 3.5 dB at 2 f0 . Furthermore, the overall dimensions of
the bare-die itself are huge with respect to the wavelength
on GaN (3.6 ) for 2 f 0 , which makes matching difficult.
The optimum input impedances are only half the real part
of the load impedances (0.2 ), while the imaginary part is
negligible.
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MAASSEN et al.: 70 W GaN-HEMT Ku-BAND PA IN MIC TECHNOLOGY
D. Implementation
The substrate chosen for the matching circuit compro-
mises between a low losses and a high r to realize low
TL impedances, small sizes, as well as low radiation losses.
In this design, a one-substrate approach has been intentionally
used due to manufacturing constraints. Multiple substrates
with different r values are widely used [5][7] while pro-
ducing high losses as well as high radiation due to intercon-
nections. The height of the substrate should ideally be close
to the bare-die to ease bonding. Therefore, a thin alumina
substrate (Al2 O3 ) of 127 m height with an r = 9.9 has
been chosen and can take advantage of its extremely low
tan = 0.0002 (10 MHz). With a layer stack including a
resistive NiCr-layer it was possible to produce highly accurate
thin film resistors on the substrate. To handle high currents
the Au metallization was grown to 10 m thickness.
Twelve gate and 12 drain pads needed to be interconnected
to the matching circuit. An array of 24 bondwires was
therefore 3-D modeled and applied at the input and output,
respectively, with two parallel wires per pad. The resulting
total equivalent inductance of L Bond = 12.5 pH including
the mutual coupling is of certain tolerance considering the
factors bond height, loop, and distance. To increase the
height- and loop accuracy, automatic bonding is useful. It can
achieve impressive results even for coupling between bond-
wires [15]. However, the bond distance is mainly dependent
on the mounting accuracy (30 m) and the size tolerances
of the bare-die itself (50 m). Simulations have shown that
the variability of the total equivalent inductance is in the range
of L Bond = {8.3 pH, . . . , 16.6 pH}.
The source contact of the bare-die acts as interconnection
to the GND potential of a matching circuit. Furthermore,
it is the connection to the heat sink. Therefore, the mounting
of the bare-die needs to be low ohmic for matching require-
ments and of a minimum thermal resistance. In this paper
a eutectic die-attach compromises between a thin preform
and a low amount of trapped air in the die-attach. In order
to allow controlled thermal expansion, the bare-die has been
mounted on a CuMoCu flange. Thermal simulations show
that the resulting thermal resistance of the junction to case
is R JC = 1.6 K/W. The simulated ideal PAE of 45% results
in a significant amount of dissipated power that needs to be
removed via the cooling system. In reality, the PAE will be
even much lower due to impedance mismatch and losses of
the load transformation networks. The channel temperature of
the device can be monitored with the model and needs to
stay below 320 C, while a higher temperature will cause the
device to fail. The theoretical possible cooling therefore limits
the dissipated power to Pdiss,max 86.4 W.
E. PA Design Approach
The very low optimum source and load impedances lead
to a high impedance transformation ratio of the network of
(50 )/(0.4 ) = 125 at the output. Contrary to that is
the need for achieving this transformation ratio over a 5%
fractional bandwidth (FBW). The previously analyzed low
power gain of 6.5 dB results in a multistage matching
3
Fig. 3. Proposed two-stage PA topology.
approach that can increase the gain to an acceptable level
(Fig. 3). The necessary driving level of the preamplifier (Q1)
has been calculated to be Pout,drv 15 W. Preliminary analysis
has shown that the smaller device with a 4.8 mm gate width
can hardly reach that level. Additional mismatch constraints
that are unavoidable to match the output of this smaller
device to the input of Q2 will further decrease its level.
A previous design realization has shown that a continuous
power level of 12 W can be reached in a deep compres-
sion [9]. Therefore, the same device was chosen for the Q2
as well as Q1 while taking into account the total PAE, as
in [16]. The premature power/gain compression of the HEMT
device when operated at high input power levels of Q2 causes
additional AMAM nonlinearity [17]. This compression is
mainly caused by the gm curve progression. At the analyzed
frequencies, already within the maximum stable gain (MSG)
operation, the gm curve is asymmetric with a strong increase
from turn-ON to gm max . The slow decrease toward gm = 0 S
is the reason for a constant compression over Pin . Simulations
show that this difficult time-dependent AMAM compression
can be compensated by lower quiescent current of Q2, whereas
the increased AMPM nonlinearity can be compensated via a
predistortion for modulated signals. Based on this analysis, the
optimum load impedances for Q2 (Z L OMN ) are chosen within
saturation conditions. The load impedances for Q1 (Z L ISMN )
represent the maximum gain with respect to the lower out-
put power level. The input impedances of both transistors
Q1 and Q2 (Z S IMN , Z S ISMN ) should accomplish a flat gain
over frequency. Hereby, a mismatch of the input impedance
of Q2 (Z S ISMN ) from the optimum conjugate complex match
can help to lower AMPM nonlinearities as shown in [18].
III. D ESIGN OF M ATCHING N ETWORKS
The matching of devices with very low impedances is
challenging. Considering their additional trajectories over fre-
quency makes a broadband matching for the input matching
network (IMN) as well as the output matching network (OMN)
almost impossible. Especially in the interstage matching net-
work (ISMN), the two consecutive stages need to be matched
to one another. The required transformation ratio is consider-
ably low but a complex-to-complex transformation needs to
be done with different directions of the imaginary trajectories.
Nevertheless, a reactively matched design approach has hereby
been chosen to compensate the dominant parasitics.
A. Ideal Matching Limits
The impedances of the bare-die itself have been analyzed
based on the Bode Fano limits [19]. Using the simple transistor
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4 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

schematic from Fig. 1, an equivalent impedance equation of

the L, C, R for the input as well as for the output can be
stated and analyzed toward a maximum achievable bandwidth
as in [20]
sL + r
Z 1 (s) = 2 . (4)
s LC + sr C + R
A possible ideal matching circuit can be approximated by a
Taylor series in the following form:
1 A1 A3
F(s) = ln = j A0 + + 3 + with s = + j .
s s
(5)
Transforming the impedance to an admittance, building the
logarithm, and negation lead to
1 1
(R + r ) + (L + r C) + LC Fig. 4. Analyzed theoretical matching limit (Bode Fano) of the complex
1 2
ln = ln s s
. (6) Z in {Rin ; Cgs ; L pad } (top) and Z out {RDC ; Cds ; L pad } (bottom) impedances for
1 1 a center frequency of 14 GHz.
(R r ) (L r C) + LC
s2 s
For (1/s) = 0 follows j A0 = j , A1 = (2/C) and A3 =
((2(L 3C))/(3LC 3 )). After Fano et al. [19], an equivalent
circuit with two zeros has to fulfill the following two integrals
at s = :

1

ln d = A1 2 ri (7) Fig. 5. Schematic of the initial output matching circuit.
2
 0 

1 2
3
2ln d = A3 ri . (8) B. Distributed Matching
0 2 3
A matching circuit was developed based on the mechanical
Defining K = (2/) ln(1/), a center frequency 0 , and the
and electrical constraints. Knowing the difficulties of matching
bandwidth b a substitution of 1 = 0 (1 (b/2)) and
even for an ideal approach, all parasitic limitations must
2 = 0 (1 + (b/2)) leads to the expression
be considered for a nonideal circuit. Therefore, a matching
  1 circuit has been developed based on lumped elements, con-
K 23 13 + 3 A3 [ A1 K (2 1 )]3 = 0. (9)
4 sidering their Q and TL elements within a mixed schematic
An insertion of A1 and A3 from the Taylor series of (9) and (Fig. 5). The drainsourcecapacitance Cds at the output is
replacing 0 L with X L and 0 C with BC leads to the equation resonated out with a shunt inductance L feed . An additional
 
 series capacitance has been used to compensate L bond , for
6 12 1 24
K
3
K + 2 1+ 2
2
K 3 = 0.
b BC b Bc b X L BC2
(10)
This equation can be analyzed in MATLAB for the input
Z in {Rin ; Cgs ; L pad } as well as the output Z out {RDC ; Cds ; L pad }
of the device. As a result, the theoretically possible relative
matching over the bandwidth was obtained. It can be seen
in Fig. 4 on the bare-die reference plane itself, as well
as with possible L Bond inductances for a center frequency
of 14 GHz. The values of L Bond = {8.3 pH; 12.5 pH; 16.6 pH}
therefore correspond to the variability of bondwires defined in
Section II-D. Even by considering a relatively poor matching
of only 10 dB, the input achieves less than 2.5% FBW
around f c . This is mainly due to the extremely low
Rin = 0.2  with the high Cgs = 24 pF. This relative match-
ing only represents the transformation from the optimum
source impedance to 50 . Whereas the sourcepull contours,
based on the sourcepull simulation, show that a deviation
from these optimum values can be tolerated. The output is,
considering its higher values of RDC = 10.5  with the high
Cds = 4.2 pF, easier to match to at least 8% FBW w/o the
bond inductances.
further transformation as well as for the ability to block the
dc. Ideally, the transistors internal current source can now be
seen as purely resistive impedance. The series line elements
(TL1 , . . . , TL4 ) behave like a stepped impedance transformer
starting with a low characteristic impedance from the transis-
tor. An additional open stub (TLstub ) has been used in between
the last two transforming elements to flatten the filter response.
The bandwidth of a stepped impedance transformer is limited
by the number of elements (N). The transformation ratio is
limited by the values (Z 1,...,N ). Furthermore, both the issues
are limited to the lowest possible insertion loss (N 0)
and the lowest realizable line impedance (Z min,, N ). The
schematic approach is divided into subelements that need to
fulfill the following requirements.
1) DC Feed: For realizing a dc feed a /4-line with an
additional radial stub was designed. As a compromise the
characteristic impedance of the /4-line needs to be low (high
width) to be able to transmit the high current at the drain, but
preferably high, to realize a high Q of the transformed open.
2) Parallel Lines: Trying to realize a TL with an extreme
low characteristic impedance tends to become a parallel plate
in microstrip. The width of the microstrip line (w) becomes
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MAASSEN et al.: 70 W GaN-HEMT Ku-BAND PA IN MIC TECHNOLOGY 5

Fig. 6. (a) Schematic of the proposed two-stage amplifier divided into three matching circuits (IMN, ISMN, and OMN). Each TL is parallelized by
n-times written underneath in green. Step-by-step visualization of the virtual open in a busbar. (b) Starting with an open stub and (c) double open stub,
and (d) resulting in interconnected symmetrical stubs.

TABLE II
S CHEMATIC VALUES OF THE P ROPOSED T WO -S TAGE A MPLIFIER

Fig. 7. (a) Measured and simulated capacitance. (b) Lumped equivalent

model. (c) Layout of interdigital capacitor.
multiple times the height (h) of the substrate. In consequence,
the current distribution can no longer be approximated by a
quasi-TEM microstrip mode. The high width of the bare-die
(4.8 mm) leads to a minimum strip width w of the same value.
However, this w is more than /2 on the chosen substrate
and may result in a multimode propagation. Furthermore, the
resulting characteristic impedance Z min = 6.5  is at least
16 times less than the required transformation ratio.
Parallelizing one TL to n TLs can help to lower the
total characteristic impedance. Considering an even mode at
the TL, the field distribution of a microstrip line is n
times the single one. The resulting distributed TLs have to be
combined to one ended line at the Z 0 = 50  output over the
number of sections N. Due to the 12 transistor cells, parallel
lines sections with n = {1; 3; 6; 12} over N = 4 were chosen
[see Fig. 6(a)]. An approximation of the TL parameter can be
done with
Z N,distri
Z N,ideal =  N,ideal =  N,distri . (11)
n
3) Busbar: For providing an equal dc distribution to
all transistor cells, while not destroying the even-mode
propagation over the distributed transmission-line combiner,
the busbar principle was introduced in [11]. In Fig. 6(b),
a T-junction shows a proper RF isolation between two
branches while working in an even mode. Of course the
RF propagation stays the same when splitting the two open
stubs into four, keeping their sum of impedances constant
[see Fig. 6(c)]. While maintaining a symmetrical network like
in Fig. 6(d) it is possible to connect two of the open stubs at
their end, as long as their electrical length (BB ) is much less
than /4. As a result, a bar is built that alternately provides
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6 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

a virtual open and a combining sink. This concept enables to

provide dc current to all the transistor cells via a wide bar
while maintaining RF isolation between them by the resulting
virtual open.
4) Interdigital Capacitor: In this design, all capacitors
(Cimn , Cismn , Comn ) were realized by interdigital capacitors on
the substrate. Using n = 6 interdigital capacitors in parallel,
the total series capacitance was increased. The finger width
and spacing are set to 50 m due to manufacturing constraints.
Lumped element models have been developed and verified by
electromagnetic (EM) simulations. Fig. 7(a) depicts a com-
parison between the simulated and measured results for one
single input capacitor ((Cimn )/6) as well as the behavior of the
equivalent model [see Fig. 7(b)]. The values for the equivalent
model are Cs = 0.06 pF, C p = 0.11 pF and L s = 0.14 nH
for the finger length L f = 0.2 mm and width W f = 50 m
as well as a distance Wgap = 50 m between this structure.
As a result, the parallel capacitance is about twice as high
as the series one. Therefore, the capacitors are utilized as
complex matching elements. The SRF is kept high, in this
case above 20 GHz, to achieve an almost constant effective
capacitance within the desired frequency range [see Fig. 7(a)].
Therefore, possible deviations between simulation and realiza-
tion due to manufacturing tolerances can be minimized.

C. Simulation Approach
All the subelements were analyzed individually in a
schematic as well as a 2.5 D Momentum simulation to ful-
fill their specification. At the input side of the amplifier,
additional series resistors (RGate ) within the dc feed were
provided improving the stability of the amplifier toward low
frequencies. Furthermore, the interdigital capacitors with their
RF series resistance build a high-pass filter that reduces
possible low frequency oscillations. Parameterized EM models
of the components have been created within Keysight ADS
afterward. These models benefit from considering all parasitics
while maintaining the ability to change their characteristic
parameters.
1) Small-Signal Analysis: Based on the parameterized
EM models the load transformation networks were developed
with the objective to realize the required optimum source
and load impedances that were identified by source, and load
pull simulations. The resulting characteristic values of the
elements are shown in Table II. Within the simulation the ports
were loaded with the conjugate optimum impedances. The
EM-based simulated impedances from 13.75 to 14.5 GHz
for the input (Z S IMN,realized , Z S ISMN,realized) are shown
in Fig. 8(a).
For the output side of the transistor the impedances
(Z L ISMN,realized, Z L OMN,realized ) are shown in Fig. 8(b).
Furthermore, multi frequency load and sourcepull
contours (MuFLoC) are plotted considering [Pout, F ] as
well as [PAE F ]. The contours represent the minimum values
of all frequency-dependent data between 13.75 and 14.5 GHz
and therefore represent valuable in-band performance data as
described in Section II-C. It can be seen that the input of the
first stage (IMN Q1) as well as the second stage (ISMN Q2)
Fig. 8. Simulated EM-based impedances realized by the matching circuits
from 13.75 to 14.5 GHz for the input sides of (a) Q1 (IMN) and Q2 (ISMN)
and (b) for the output sides of Q1 (ISMN) and Q2 (OMN). The plotted
multifrequency load and sourcepull contours (MuFLoC) represent the
minimum value over the desired frequency range.
are well matched to the optimum impedances (Z S,opt).
Especially, the direction of the imaginary part is the same.
For the output side, much more attention was paid to achieve
a high Q transformation for the output of (Q2). Therefore, the
realized impedances are inside the Pout = 47 dBm contour.
Within the ISMN the trajectories of the load and generator
impedances travel in opposite directions over frequency.
Therefore, the realized matching is a compromise. All the
three matching circuits are able to provide a matching 15 dB
toward their opposite impedance. Additional Monte Carlo
analysis determines the bondwire parameters that produce the
most significant impact on the performance of the circuit.
2) Large-Signal Analysis: Within a large-signal analysis,
power and frequency sweeps were carried out using
Harmonic Balance Analysis. Special attention was given to
the temperature of the junction during the simulation to not
exceed the theoretical cooling constraints. Furthermore, the
sensitive gate current was monitored. Each transistor cell was
modeled separately. Therefore, it was possible to simulate
intrinsic loadlines of each transistor cell (Q2.1,, Q2.12)
[see Fig. 9(a)]. The power distribution between the transistor
cells and leakage currents were analyzed. From Fig. 9(b),
good distribution between the 12 cells can be noticed. The
outer ones (Q2.1 and Q2.12) provide the most RF power to
the matching circuit, due to their lower baseplate temperature
and the reduced combining parasistics.
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MAASSEN et al.: 70 W GaN-HEMT Ku-BAND PA IN MIC TECHNOLOGY 7

Fig. 9. (a) Simulated intrinsic loadlines. (b) Power distribution over

power bar.

Fig. 11. Realization of the amplifier. (a) Sideview illustration of the MIC.
(b) Top view of the MIC. X-ray pictures of the bare-die (c) Q1 and (d) Q2.

Fig. 10. Example of an analyzed amplifier large-signal transfer function by

the STAN-Tool for an odd-mode injection in the ISMN.

Considering the designed amplifier as a multistage circuit

the stability calculations could not be done using classical
K-factor analysis [21]. Therefore, stability has been proven
in a large-signal analysis by the STAN-Tool [22]. By applying
this approach, additional odd-mode signals were injected to
all gates, drains, and dc connections of the 24 transistor cells.
By calculating the large-signal transfer function of the ampli-
fier, a pole zero analysis was performed. In Fig. 10, a stable
operation can be seen as an example for an inserted odd
mode excitation at one certain port over various power levels.
Unstable poles (red arrows) can be determined, located at
the same point as the right half-plane (RHP) zeros for the
maximum injected power. After additional analysis, they can
be ignored as physical quasi-cancellation occurring from the
low sensitivity in the interstage matching circuit [22].

IV. R EALIZATION
The bare-dies and substrates were aligned and mounted
on a thick CuMoCu-flange [see Fig. 11(a)]. All wedge
wedge bondwire interconnections were automatically placed.
A top view of the mounted MIC can be seen in
Fig. 11(b). The die-attach was analyzed vian X-ray microscopy
[see Fig. 11(c) and (d)]. The few bright dots are tiny air inclu-
sions. This pallet was afterward positioned in a surrounding
aluminum water-cooled fixture. On top of this, a 203 m-
thick bolted RO4003c substrate supplies all dc potentials as
well as the RFin , RFout signals to SMA connectors (Fig. 13).
Within this fixture the pallet can be measured on an alumina
reference plane (RefGSG ) via GSG probes as well as at the
SMA reference plane (RefSMA ).
V. M EASUREMENT R ESULTS
A. Small-Signal Measurements
Probed small-signal measurements were performed
with 500 m pitch probes (Z-probe) on the alumina
Fig. 12. (a) Comparison between measured (sample #1) and simulated
small-signal behavior of the amplifier (VDS1,2 = 40 V; IDq1,2 = 300 mA).
(b) Comparison between six measured amplifiers within small-signal condition
(VDS1,2 = 40 V; IDq1,2 = 300 mA).
reference-plane (RefGSG ) using a network analyzer (N5230A).
An additional second tier thru-reflect-line calibration
deembeds the ground-signal-ground pads (GSG). In Fig. 12(a)
very good agreement between simulation and measurement
can be seen. Only a slight frequency shift occurs as a result
of the bondwire tolerances. Six samples (#1, . . . , #6) were
manufactured and compared within small-signal conditions in
Fig. 12(b). All show a slightly different behavior with respect
to the frequency, as well as the amplitude. Nevertheless,
the aim to produce working samples within the specified
frequency range of F {13.7514.5 GHz} has been achieved.
In the future work, the reproducibility is going to be improved
by lowering the mounting tolerances that will result in a
lower variability of the samples.
 This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.
8 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Fig. 13. Large-signal measurement setup.
Fig. 14. Comparison between measured and simulated large-signal behavior
of the two-stage amplifier. Powersweep at 14.2 GHz (VDS1,2 = 40 V; IDq1,2 =
300 mA).
B. Large-Signal Measurements
Large-signal measurements in the Ku-band suffer from high
losses and therefore high measurement uncertainties. To lower
the losses and enhance the accuracy, a measurement setup
based on high directivity WR75 waveguide couplers was
used. The continuous wave (CW) input is generated with a
microwave synthesized source (E8254A) and boosted with a
first preamplifier (ZVE-3W-183+) as well as a second one
(previously developed [9]) (see Fig. 13) to be able to put
the device under test (DUT) in saturation. The input and
output power levels of the DUT were measured with a power
meter (E4412). A nonflat preamplification is compensated by
a MATLAB controlled measurement system to hold the DUT
in a reproducible thermal compression. Both the gate currents
were monitored separately to indicate the compression level.
Automatic short intermissions were used in the measurement
setup to lower thermal self-heating. The setup was calibrated
to the SMA reference plane RefSMA . Afterward the results
were de-embedded to RefGSG based on the known offset from
the small signal measurements (see Section V-A).
The PA is characterized versus input power for all fre-
quencies between 13.5 and 14.6 GHz within a dynamic range
of 24 dB. From Fig. 14, it can be observed that the compres-
sion behavior of the measurement is equal to the simulation
for 14.2 GHz. A constant decrease in gain for the class-AB
behavior needs to be stated. With a class-C biasing the gain
Fig. 15. Comparison between measured and simulated large-signal behavior
over frequency (VDS1,2 = 40 V; IDq1,2 = 300 mA).
could have been lowered down to 15 dB in the backoff
while afterward remaining constant up to Psat . The output
power reaches 47 dBm about 1 dB later than in simulation.
While the resulting gain compression is, like in the simulation,
6 dB. The PAE of the two stages is 5% less than simulated
but reaches up to 22%. This dependence can be explained
by a self-heating of the device that is higher than initially
simulated. The model itself is built by the manufacturer based
on pulsed power conditions. By either increasing the Rth of the
model, or the base temperature, the higher self-heating in the
measurement can be explained. This is furthermore proven by
thermal images shown in Section V-C. The six manufactured
amplifiers were measured in their large-signal behavior. All
demonstrate an equal peak output power with respect to the
frequency shift seen in Fig. 12 (bottom). In Fig. 15, reasonable
agreement between simulation and measurement can be noted
over frequency. The ripple in the frequency range of interest
is 0.6 dB.
C. Thermal Analysis
A thermal imaging of the fixture was done during a CW
measurement in the dark to monitor the surface temperature
of the bare-die. The surface reflection coefficients (IR )
for IR light vary over the different materials. With a
constant temperature of a heated up fixture the bare-die
coefficient on the top of the passivation was analyzed to be
IR(Die) = 0.34 and the flange IR(flange) = 0.5. The thermal
difference between the surface of the passivation and the
channel itself is T ,pCH (V ) 4060 K. From Fig. 16, the
channel temperature can be calculated for Pout = 40 W
to TCH,avg 228 C; TCH,peak 280 C. The total thermal
resistance of the junction to the sink can be calculated as
TCH Tflange 228 C 24 C K
R JS = = = 1.5 . (12)
PDC PRF 176 W 40 W W
The thermal measurement is in good agreement with
the CST -based finite element method thermal simulation
from Fig. 16(b). Nevertheless, the thermal conductivity of
the mounting is too low for higher output power levels.
 This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.
MAASSEN et al.: 70 W GaN-HEMT Ku-BAND PA IN MIC TECHNOLOGY
Fig. 16. Comparison between (a) measured and (b) simulated thermal
behavior (VDS1,2 = 40 V; IDq1,2 = 300 mA; Pout,avg = 40 W).
Fig. 17. (a) Measured gain compression and (b) AMPM conversion with a
32APSK modulation ( = 0.25; 16 MSym/s) at an unlinearized amplifier for
14.25 GHz. (VDS1,2 = 40 V; IDq1 = 300 mA; IDq2 = {300; 50} mA).
For Pdiss 80 W a self-heating occurs within the CW
measurement. To accomplish lower thermal resistances,
modern mounting technologies with plated diamond as well
as silver sintering can be used in the future work.
D. Modulated Measurements
The previously in CW operation analyzed parameters like
Psat or P1 dB are not sufficient for describing the nonlinear
behavior of an amplifier for operation in multi carrier modes.
Therefore, AMAM as well as AMPM conversion were
chosen as a first set of valuable performance data. Compared to
TWTAs the premature gain compression of the GaN-amplifier
is a highly nonlinear behavior (compare Fig. 14). In this paper,
effort was spent to compensate this compression simply by
the class of operation. Biasing the PA Q2 in deep class-AB
IDq2 = 50 mA instead of IDq2 = 300 mA while holding
the preamplifier Q1 in the biasing conditions of max gm
(IDq1 = 300 mA) results in a lowered small-signal gain
that is more equal to the saturation level [see Fig. 17(a)].
This AMAM and AMPM analysis was carried out with
modulated signals to lower errors of a thermal self-heating.
In Fig. 17(b), it can be noticed that this biasing also lin-
earizes the AMPM conversion to a lower phase variation;
the maximum can be depicted with 1.6/dB. Additionally to
AMAM and AMPM conversion, the spectrum regrowth
measured by the adjacent channel power ratio (ACPR),
is an important indicator of a linear amplifier operation.
Furthermore, the error vector magnitude (EVM) is a
comprehensive measure of the quality of the transmitter.
Therefore, a modulated measurement (QPSK) modulation with
9
Fig. 18. Measured modulation schemes of common SatCom signals
for Pout, peak - PAPR, 14.25 GHz. (a) QPSK ( = 0.35; 16 MSym/s;
e.g., DVB-S). (b) 32APSK ( = 0.25; 16 MSym/s; e.g., DVB-S2).
(c) 64APSK ( = 0.05; 16 MSym/s; e.g., DVB-S2X).
Fig. 19. Output spectrum of the PA for Pout,avg = 30 W and a QPSK
signal with 16 MSym/s; = 0.35 (w) and (w/o) an RFPAL at 14.375 GHz
(VDS1,2 = 40 V; IDq1 = 300 mA; IDq2 = 50 mA; RBW = 200 kHz; RMS;
VBW = 10 MHz; 300 ms sweep; 100 MHz span).
a peak to average power ratio (PAPR) of 3.9 dB and a roll-
off factor = 0.35 was chosen to represent the classical
DVB-S signal (see Fig. 18(a) PAPR = 3.9). The increasing
demand for data leads to higher order modulation schemes
(up to 32APSK) that were defined in the DVB-S2 standard
(Fig. 18(b) PAPR = 5.6). Additionally, the roll-off factor was
lowered to = 0.25 to enhance the spectral efficiency. The
newly defined DVB-S2X standard allows modulation schemes
up to 256APSK with a sharp roll-off factor down to = 0.05.
Especially the decreased leads to high PAPR of up to
6.42 dB for a 64APSK with = 0.05 [see Fig. 18(c)]. The
spectral mask depends on the signal bandwidth and is defined
in the ETSI standard [23]. Linearization was performed with
a digital predistortion (DPD) that was able to reduce the out-
of-band energy and enhances the efficiency by compensating
nonlinearities like AMAM, AMPM as well as memory
effects. As an alternative, an IF predistortion directly in the
block up-converter (BUC) path was used by the method
stated in [24] called RF PA linearization (RFPAL). Both the
techniques show equal performance levels and can be used
either in the BUC (RFPAL) or in the modulator (DPD).
In Fig. 19, the resulting output spectrum of the PA for
a QPSK and an average output power Pout,avg = 30 W at
14.375 GHz can be seen. It can be noted that the amplifier
can hardly reach the spec in band as well as the required
shoulder distance without (w/o) predistortion. The sidelobes
cross the mask restrictions. However, the spectrum mask is
easily fulfilled with (w) the RFPAL.
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10
Fig. 20. Measurement results for a QPSK signal with 16 MSym/s; = 0.35
and a RFPAL at (VDS1,2 = 40 V; IDq1 = 300 mA; IDq2 = 50 mA).
TABLE III
L INEARITY M EASUREMENTS FOR VARIOUS M ODULATION S CHEMES
Furthermore, the modulated measurements over frequency
with the RFPAL fulfilling the mask are shown in Fig. 20.
Depending on the measured output crest factor, the peak output
power (Pout,peak) can be calculated. Hereby, it can be noted
that Pout,peak 70 W is much higher than Pout,avg during
the CW measurements. The lower average power does not
produce much dissipated power and results in lower thermal
stress for the devices. Therefore, self-heating that limits the
output power is lowered. The high output power results in an
acceptable PAE of 20% over the entire extended Ku-band.
The calculated drain efficiency is with Q2 30% as high as
intended in the simulation, while the EVM is lower than 6%
and acceptable. Table III shows the linearity measurements
for various modulation schemes, all with constant 16 MSym/s.
It can be noted that with a higher order modulation scheme
and a decreased the Pout, avg needs to be decreased as well
to fulfill the mask. Nevertheless, high PAE can be achieved
even in the deep backoff of the higher order modulation
schemes (32APSK, 64APSK). This depicts the possibilities for
high-data rate transmission in VSATs.
VI. S UMMARY AND C ONCLUSION
In this paper, an extensive design procedure for a highly
efficient two-stage GaN-HEMT PA in the Ku-band has been
presented. Beginning with an ideal transistor approximation,
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
TABLE IV
C OMPARISON OF S TATE - OF - THE -A RT PACKAGED PA IN THE Ku-BAND
the design constraints were theoretically analyzed. A load/
sourcepull methodology has been used with a systematic
design approach to develop the matching circuits. Effort was
spent on EM-modeling of the matching circuits to reduce
the effects of manufacturing constraints. The procedure was
afterward validated by implementing the two-stage PA based
on two 70 W bare-die GaN-HEMT devices. Simulated and
measured results of this PA show very good agreement.
Large-signal measurements (CW) show more than 50 W
output power in the desired frequency range of interest with
more than 23% PAE. These results were achieved while
maintaining a high gain of 15 dB. Linearized modulated
measurements using a 16 MSym/s QPSK (DVB-S) signal
demonstrate an average PAE of 21% by more than 30 W output
power (70 W peak) while holding the linearity requirements.
Also, higher order modulation schemes 32APSK(DVB-S2),
64APSK(DVB-S2X) were tested and state 20 and 16 W output
power with a PAE of 21%. Different manufactured amplifiers
show only a small variation in their performance data.
The results are shown in comparison to previous reported
packaged PAs in Table IV. Moreover, the first two entries
represent MMICs that have a comparable gain to this paper
while suffering from a lower output power and PAE. The
published MIC [5] shows excellent PAE but under pulsed
power conditions. Bandwidth and gain are considerably lower
than in our work, while the reported MICs [6], [7] determine
the maximum output power reported suffering from a low
power gain. An MIC reported in [25] demonstrates high
bandwidth with prematched bare-dies. Our previously reported
work [9] shows a high power density over 6% FBW. In this
paper the low power gain is extended to 15 dB by keeping
the PAE at 21%. Furthermore, a higher output power was
achieved. The excellent results obtained indicate that a hybrid
two-stage design approach has significant advantages toward
system design while achieving a state-of-the-art efficiency.
ACKNOWLEDGMENT
The authors would like to thank P. Saad and A. Hamidian
for their support and K. Beister, G. Hechtfischer, T. Janda,
 This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.
MAASSEN et al.: 70 W GaN-HEMT Ku-BAND PA IN MIC TECHNOLOGY
C. Binder, and J. Bschorr for implementation. They would
also like to thank GloMic GmbH for their continuous interest
and advice.
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[24] D. Maassen, F. Rautschke, and G. Boeck, IF predistortion in the block
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Daniel Maassen (S13) received the B.Eng. degree
in electrical engineering from the University of
Applied Science, Aachen, Germany, in 2012, and
the M.Sc. degree in electrical engineering from the
Berlin Institute of Technology, Berlin, Germany,
in 2014, where he is currently pursuing the Ph.D.
degree with the Microwave Engineering Research
Laboratory.
His current research interests include the design of
efficient PAs and system components.
Felix Rautschke (S15) was born in Chemnitz,
Germany. He received the B.Sc. and M.Sc. degrees
in electrical engineering from the Chemnitz Univer-
sity of Technology, Chemnitz, in 2012 and 2014,
respectively. He is currently pursuing the Ph.D.
degree with the Microwave Engineering Research
Laboratory, Berlin Institute of Technology, Berlin,
Germany.
His current research interests include broadband
GaN microwave amplifier design.
Florian Ohnimus received the Ph.D. degree in
electrical engineering from the Berlin Institute of
Technology, Berlin, Germany, in 2011.
In 2011, he joined Rohde & Schwarz, Munich,
Germany, where was a Development Engineer in
the area of broadband power amplifier design.
Since 2007, he has been a Research Engineer with
the Fraunhofer Institute for Reliability and Microin-
tegration and the Research Center for Microperiph-
eric Technologies, Berlin.
Dr. Ohnimus was the recipient of the Erwin-
Stephan Award from TU-Berlin in 2008 and the Best Paper Award of the
Loughborough Antennas and Propagation Conference in 2010.
Lothar Schenk received the Dipl.-Ing. degree in
information technology from the Dresden University
of Technology, Dresden, Germany, in 1985.
He was involved in high-power RF amplifiers
and related circuits mainly for broadcast trans-
mitters at Funkwerk Koepenick, Berlin, Germany,
until 1991. Since 1999, he has been with Telefunken
Sendertechnik, Berlin, and Rohde & Schwarz,
Munich, Germany. His current research interests
include efficient PA techniques and higher frequency
applications beyond 10 GHz.
 This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.
12
Uwe Dalisda received the M.Sc. (Dipl.-Ing. Univ.)
degree in information technology from the Techni-
cal University of Dortmund, Dortmund, Germany,
in 1986.
He held several positions at Rohde & Schwarz,
Munich, Germany, and Nokia Mobile Phones. He is
currently the Director of Research and Development
with the Broadcast and Media Business Unit,
Rohde & Schwarz. He has 25 years of experience in
developing high-power RF amplifiers for broadcast
transmitters with a focus on high-efficiency and
high-power broadband amplifiers for electromagnetic compatibility applica-
tions from 9 kHz up to 18 GHz.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Georg Boeck (M93SM00F08) received the
Ph.D. (Hons.) degree from the Berlin University of
Technology, Berlin, Germany, in 1984.
In 1984, he joined the Siemens Research Labo-
ratories, Munich, Germany, where he was involved
in fiber optics and GaAs electronics. Since 1991,
he has been the Head of the Chair in microwave
engineering with the Berlin Institute of Technology,
Berlin. He was appointed as a Guest Professor
with Southeast University, Nanjing, China. He has
authored or coauthored more than 340 technical
papers and one book. His current research interests include the design and
modeling of devices and circuits up to the terahertz range with a focus on
the development of high-efficiency power amplifiers and smart transceiver
systems for modern digital communications technologies.
Dr. Boeck was the chair of several international conferences, numerous
steering and technical program committees, and the editorial boards of
respected international journals. Together with his doctoral students, he was
a recipient of numerous Best Paper Awards and Design Competitions. From
2006 to 2008, he was recognized as the Distinguished Microwave Lecturer
from the IEEE Microwave Theory and Techniques Society (MTT-S).