Bulletin I25233 10/06

ST173CPbF SERIES
INVERTER GRADE THYRISTORS Hockey Puk Version

Features
Metal case with ceramic insulator 330A
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance

Typical Applications
Inverters
Choppers case style TO-200AB (A-PUK)
Induction heating
All types of force-commutated converters

Major Ratings and Characteristics

Parameters ST173C..C Units

IT(AV) 330 A

@ Ths 55 C

IT(RMS) 610 A

@ Ths 25 C

ITSM @ 50Hz 4680 A

@ 60Hz 4900 A

I2 t @ 50Hz 110 KA2s

@ 60Hz 100 KA2s

V DRM/V RRM 1000 to1200 V

tq range 15 to 30 s

TJ - 40 to 125 C

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ST173CPbF Series
Bulletin I25233 10/06

ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V DRM/V RRM, maximum VRSM , maximum I DRM/I RRM max.
Type number Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max.
V V mA
10 1000 1100
ST173C..C 40
12 1200 1300

Current Carrying Capability

ITM ITM ITM

Frequency Units

180oel 180oel 100s

50Hz 760 660 1200 1030 5570 4920

400Hz 730 590 1260 1080 2800 2460
1000Hz 600 490 1200 1030 1620 1390 A
2500Hz 350 270 850 720 800 680
Recovery voltage Vr 50 50 50 50 50 50
V
Voltage before turn-on Vd V DRM V DRM V DRM
Rise of on-state current di/dt 50 50 - - - - A/s
Heatsink temperature 40 55 40 55 40 55 C
Equivalent values for RC circuit 47 / 0.22F 47 / 0.22F 47 / 0.22F

On-state Conduction
Parameter ST173C..C Units Conditions

I T(AV) Max. average on-state current 330 (120) A 180 conduction, half sine wave
@ Heatsink temperature 55 (85) C double side (single side) cooled
I T(RMS) Max. RMS on-state current 610 DC @ 25C heatsink temperature double side
cooled
I TSM Max. peak, one half cycle, 4680 t = 10ms No voltage
non-repetitive surge current 4900 A t = 8.3ms reapplied
3940 t = 10ms 100% VRRM
4120 t = 8.3ms reapplied Sinusoidal half wave,
I 2t Maximum I2t for fusing 110 t = 10ms No voltage Initial TJ = TJ max
KA2s
100 t = 8.3ms reapplied
77 t = 10ms 100% VRRM
71 t = 8.3ms reapplied
I t 2
Maximum I t for fusing
2
1100 KA s
2
t = 0.1 to 10ms, no voltage reapplied

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 ST173CPbF Series
Bulletin I25233 10/06

On-state Conduction
Parameter ST173C..C Units Conditions
VTM Max. peak on-state voltage 2.07 ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse
p
V T(TO)1 Low level value of threshold
1.55 (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.
voltage V
V T(TO)2 High level value of threshold
1.61 (I > x IT(AV)), TJ = TJ max.
voltage
r Low level value of forward
t1
slope resistance 0.87 (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.
m
r t2 High level value of forward
0.77 (I > x IT(AV)), TJ = TJ max.
slope resistance
IH Maximum holding current 600 T J = 25C, I T > 30A
mA
IL Typical latching current 1000 T J = 25C, V A = 12V, Ra = 6, I G = 1A

Switching
Parameter ST173C..C Units Conditions
di/dt Max. non-repetitive rate of rise TJ = TJ max, VDRM = rated VDRM
1000 A/s
of turned-on current ITM = 2 x di/dt
TJ= 25C, VDM = rated VDRM, ITM = 50A DC, t = 1s
t Typical delay time 1.1 p
d
s Resistive load, Gate pulse: 10V, 5 source
Min Max TJ = TJ max, ITM = 300A, commutating di/dt = 20A/s
tq Max. turn-off time 15 30 VR = 50V, tp = 500s, dv/dt: see table in device code

Blocking
Parameter ST173C..C Units Conditions
dv/dt Maximum critical rate of rise of TJ = TJ max. linear to 80% VDRM, higher value
500 V/s
off-state voltage available on request
I RRM Max. peak reverse and off-state
40 mA TJ = TJ max, rated V DRM/V RRM applied
I DRM leakage current

Triggering
Parameter ST173C..C Units Conditions
PGM Maximum peak gate power 60
W TJ = TJ max, f = 50Hz, d% = 50
PG(AV) Maximum average gate power 10
IGM Max. peak positive gate current 10 A TJ = TJ max, tp 5ms
+VGM Maximum peak positive
gate voltage 20
V TJ = TJ max, tp 5ms
-VGM Maximum peak negative
5
gate voltage
IGT Max. DC gate current required
200 mA
to trigger
TJ = 25C, VA = 12V, Ra = 6
VGT Max. DC gate voltage required
3 V
to trigger
I GD Max. DC gate current not to trigger 20 mA
TJ = TJ max, rated VDRM applied
VGD Max. DC gate voltage not to trigger 0.25 V

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ST173CPbF Series
Bulletin I25233 10/06
Thermal and Mechanical Specification
Parameter ST173C..C Units Conditions
TJ Max. operating temperature range -40 to 125
C
T Max. storage temperature range -40 to 150
stg
R thJ-hs Max. thermal resistance, 0.17 DC operation single side cooled
K/W
junction to heatsink 0.08 DC operation double side cooled

R thC-hs Max. thermal resistance, 0.033 DC operation single side cooled

K/W
case to heatsink 0.017 DC operation double side cooled
F Mounting force, 10% 4900 N
(500) (Kg)
wt Approximate weight 50 g

Case style TO - 200AB (A-PUK) See Outline Table

RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)

Sinusoidal conduction Rectangular conduction

Conduction angle Units Conditions
Single Side Double Side Single Side Double Side
180 0.015 0.016 0.011 0.011
120 0.018 0.019 0.019 0.019
90 0.024 0.024 0.026 0.026 K/W TJ = TJ max.
60 0.035 0.035 0.036 0.037
30 0.060 0.060 0.060 0.061

Ordering Information Table

Device Code
ST 17 3 C 12 C H K 1 P

1 - Thyristor 1 2 3 4 5 6 7 8 9 10 11

2 - Essential part number

3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6 - C = Puk Case TO-200AB (A-PUK)
dv/dt - tq combinations available
7 - Reapplied dv/dt code (for tq test condition)
dv/dt (V/s) 20 50 100 200 400
8 - tq code
15 CL -- -- -- --
9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 18 CP DP EP FP * --
t (s) 20 CK DK EK FK * HK
q
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 25 CJ DJ EJ FJ HJ
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 30 -- DH EH FH HH

3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) *Standard part number.
All other types available only on request.
10 - Critical dv/dt:
None = 500V/sec (Standard value)
L = 1000V/sec (Special selection)
11 - P = Lead Free

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 ST173CPbF Series
Bulletin I25233 10/06
Outline Table

ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.

19 (0.75)

DIA. MAX. 0.3 (0.01) MIN.

13.7 / 14.4
(0.54 / 0.57)

0.3 (0.01) MIN.

19 (0.75)
GATE TERM. FOR
DIA. MAX. 1.47 (0.06) DIA.
PIN RECEPTACLE
38 (1.50) DIA MAX.

2 HOLES 3.56 (0.14) x

1.83 (0.07) MIN. DEEP
6.5 (0.26)

4.75 (0.19)

25 5 Case Style TO-200AB (A-PUK)

All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
42 (1.65) MAX. after application of Mounting Force
(see Thermal and Mechanical
28 (1.10) Specification)
Maximum Allowable Heatsink Temperature (C)

Maximum Allowable Heatsink Temperature (C)

130 130
ST173C..C Series ST173C..C Series
120 (Single Side Cooled) 120 (Single Side Cooled)
RthJ-hs(DC) = 0.17 K/ W 110 R thJ-hs(DC) = 0.17 K/ W
110
100
100
90
90 80
Conduction Angle Conduction Period
80 70
60
70 30
50 60
60 30 90
60 40
180 120
50 90 30
120 180 DC
40 20
0 40 80 120 160 200 240 0 50 100 150 200 250 300 350

Average On-state Current (A) Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

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ST173CPbF Series
Bulletin I25233 10/06

Maximum Allowable Heatsink Temperature (C)

Maximum Allowable Heatsink Temperature (C)

130 130
ST173C..C Series ST173C..C Series
120 (Double Side Cooled) 120 (Double Side Cooled)
RthJ-hs(DC) = 0.08 K/ W 110 RthJ-hs(DC) = 0.08 K/ W
110
100
100
90
90
Conduc tion Angle 80 Conduction Period
80
70
70 30 60
60
60 90 50
50 120 40
180 60
40 30 120
30 90 180 DC
30 20
0 50 100 150 200 250 300 350 400 0 100 200 300 400 500 600 700

Average On-state Current (A) Average On-state Current (A)

Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics

Maximum Average On-state Power Loss (W)

1000
Maximum Average On-state Power Loss (W)

1400
180 DC
900
120 1200 180
800 90 120
60 90
700 1000
30 60
600 30
RMS Limit 800
500
600 RMS Limit
400
Conduction Angle Conduction Period
300 400
200 ST173C..C Series ST173C..C Series
TJ = 125C 200 TJ = 125C
100
0 0
0 50 100 150 200 250 300 350 400 450 0 100 200 300 400 500 600 700
Average On-state Current (A) Average On-state Current (A)
Fig. 5 - On-state Power Loss Characteris- Fig. 6 - On-state Power Loss Characteris-
tics tics
4500 5000
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)

At Any Rated Load Condition And With Maximum Non Repetitive Surge Current
Rated VRRM Applied Following Surge. Versus Pulse Train Duration. Control
Initial TJ = 125C 4500 Of Conduction May Not Be Maintained.
4000 @60 Hz 0.0083 s Initial TJ = 125C
@50 Hz 0.0100 s 4000 No Voltage Reapplied
Rated VRRM Reapplied
3500
3500

3000
3000

2500
2500
ST173C..C Series 2000 ST173C..C Series

2000 1500
1 10 100 0.01 0.1 1
Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N) Pulse Train Duration (s)

Fig. 7 - Maximum Non-repetitive Surge Current Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled Single and Double Side Cooled
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 ST173CPbF Series
Bulletin I25233 10/06

10000

Transient Thermal Impedanc e Z thJ-hs (K/ W)

1
ST173C..C Series
Instantaneous On-state Current (A)

ST173C..C Series

0.1

1000
Steady State Value
R thJ-hs = 0.17 K/ W
0.01
(Single Side Cooled)
TJ= 25C
R thJ-hs = 0.08 K/ W
TJ= 125C
(Double Side Cooled)
(DC Operation)
100 0.001
1 1.5 2 2.5 3 3.5 4 4.5 0.001 0.01 0.1 1 10
Instantaneous On-state Voltage (V) Square Wave Pulse Duration (s)

Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteris-
tics
250 160
Maximum Reverse Rec overy Charge - Qrr (C)

Maximum Reverse Recovery Current - Irr (A)

I TM = 500 A
ST173C..C Series 140 ITM = 500 A
TJ = 125 C
200 300 A 300 A
120
200 A 200 A
100 100 A
150 100 A
50 A
80
100
60
50 A
40
50
ST173C..C Series
20
TJ= 125 C
0 0
0 20 40 60 80 100 0 20 40 60 80 100
Rate Of Fall Of On-state Current - di/ dt (A/ s) Rate Of Fall Of Forward Current - di/ dt (A/ s)

Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics

1E4
Snub b er c irc uit Snub ber circuit
Rs = 47 ohms Rs = 47 ohms
Cs = 0.22 F Cs = 0.22 F
Peak On-state Current (A)

V D = 80% VDRM V D = 80% V DRM

100 50 Hz
1000 500 400 200
400 200 100 50 Hz
1500 1000 500
1E3 1500
2500
2500
3000
3000

5000 ST173C..C Series

5000 ST173C..C Series
Sinusoid al pulse
Sinusoida l pulse
tp TC = 55C
tp TC = 40C

1E2
1E1 1E2 1E3 1E
1E4 1E1
4 1E1 1E2 1E3 1E4
Pulse Basewidth (s) Pulse Basewidth (s)

Fig. 13 - Frequency Characteristics

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 ST173CPbF Series
Bulletin I25233 10/06

1E4
Snub b er circ uit Snub b er c irc uit
R s = 47 ohms R s = 47 ohms
C s = 0.22 F C s = 0.22 F
Pea k On-state Current (A)

V D = 80% VDRM V D = 80% VDRM

1E3 100 50 Hz
400 200 100 50 Hz
1000 500 400 200
1500 1000 500
2000 1500
2500 2000
ST173C..C Series 2500 ST173C..C Series
3000
Trap ezoid al p ulse 3000 Tra pezoida l pulse
TC = 40C TC = 55C
5000 tp tp
d i/ d t = 50A/ s d i/ dt = 50A/ s
5000
1E2
1E1 1E2 1E3 1E4 1E1
1E41E1 1E2 1E3 1E4
Pulse Basewidth (s) Pulse Basewidth (s)

Fig. 14 - Frequency Characteristics

1E4
Snub ber c irc uit Snub ber c ircuit
R s = 47 ohms R s = 47 ohms
C s = 0.22 F C s = 0.22 F
Peak On-state Current (A)

V D = 80% V DRM V D = 80% VDRM

50 Hz
1E3 400 200 100 100 50 Hz
500 400 200
1000 1000 500
1500 1500
2500
2500
3000 3000
5000
1E2 5000
ST173C..C Series
Trap ezoid al p ulse 10000 ST173C..C Series
10000 TC = 40C Trap ezoid al p ulse
tp TC = 55C
di/d t = 100A/s tp
d i/ d t = 100A/ s
1E1
1E1 1E2 1E3 1E4 1E1
1E41E1 1E2 1E3 1E4
Pulse Basewidth (s) Pulse Basewid th (s)

Fig. 15 - Frequency Characteristics

1E5
ST173C..C Series
Rec ta ngular p ulse
tp di/ dt = 50A/ s
Pea k On-state Current (A)

1E4
20 joules p er p ulse 20 joules p er pulse
10 10
3 5 5
2 3
1
0.5 2
1E3
0.3 1
0.2 0.5
0.3
0.1
0.2
1E2
0.1
ST173C..C Series
Sinusoida l pulse
tp
1E1
1E1 1E2 1E3 1E4 1E1
1E41E1 1E2 1E3 1E4
Pulse Basewidth (s) Pulse Basewidth (s)

Fig. 16 - Maximum On-state Energy Power Loss Characteristics

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 ST173CPbF Series
Bulletin I25233 10/06

100
Rec tangular gate pulse (1) PGM = 10W, tp = 20ms
a) Recommended load line for (2) PGM = 20W, tp = 10ms
Instantaneous Gate Voltage (V)

rated di/dt : 20V, 10ohms; tr<=1 s (3) PGM = 40W, tp = 5ms

b) Recommended load line for (4) PGM = 60W, tp = 3.3ms
<=30% rated di/ dt : 10V, 10ohms
10 tr<=1 s (a)
(b)

Tj=-40 C
Tj=25 C
Tj=125 C
1
(1) (2) (3) (4)
VGD
IGD
Device: ST173C..C Series Frequency Limited by PG(AV)
0.1
0.001 0.01 0.1 1 10 100
Instantaneous Gate Current (A)

Fig. 17 - Gate Characteristics

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/06
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