Contents

Phys. Status Solidi A 212, No. 11, 23572362 (2015) / DOI 10.1002/pssa.201570474

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FRONT COVER

With next-generation optical/electronic devices in mind, the

growth of homoepitaxial diamond films that possess higher
crystalline quality, higher chemical purity, and higher carbon
isotopic ratio is indispensable. In order to improve both the
purity and crystalline quality of homoepitaxial diamond films,
an advanced growth condition, higher oxygen concentration
in the growth ambient, was applied (see the Feature
Article by Tokuyuki Teraji et al., pp. 23652384). Under
the proposed growth conditions, a thick diamond film of
30 m was reproducibly deposited with keeping high purity
and substantially flat surface. The cover figure shows the
evolution of the surface morphology of such sample. The film
thickness Tf of the homoepitaxial diamond in each image is
0 (substrate), 3, 30, and 120 m, respectively. Morphological
patterns move to the crystallographic off direction of the
substrate with increasing film thickness. The background
of the cover shows confocal microscope images taken by
scanning in either xz (depth) or xy (in-plane) directions.
These images indicate that the nitrogen concentration in
homoepitaxial diamond film is extremely low. The advanced
growth techniques will open up a new field of diamond
research that requires extremely low impurity concentration,
such as power devices and quantum information devices.
BACK COVER
Radiation pressure forces provide new mechanical degrees of
freedom to free-standing optical components. In particular in
the case of nanophotonic systems such forces enable efficient
light-based actuation for tunable devices and superior sensing
elements within the framework of optomechanics. The quest
to design optimal optomechanical structures for applications
in fundamental physics and metrology relies on novel materials
with both excellent optical and mechanical properties. These
requirements make diamond an excellent choice for the
realization of advanced optomechanical devices. Recent
progress in this field has led to the demonstration of nanoscale
diamond devices with very low dissipation in the mechanical
domain, paired with advances in creating high-quality optical
resonators and waveguide devices (see the Feature Article by
Patrik Rath et al. on pp. 23852399). By embedding diamond
nanomechanical resonators in nanophotonic circuits a powerful
platform is achieved which allows for using the rich toolbox
of integrated optics for chipscale systems. This approach
is in particular portable to the single photon regime, where
diamond also excels because of the availability of single photon
emitters in the form of color centers. A unified optomechanical
platform with integrated single photon emitters and detectors
thus will enable reconfigurable diamond quantum photonic
systems on a chip.

2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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20 Years of Science for Diamond
Guest Editors: Etienne Gheeraert, Stoffel D. Janssens, Paulius Pobedinskas, and Milo Nesldek
Page 2364 ______ Preface
FEATURE ARTICLES
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ORIGINAL PAPERS
Diamond growth and doping
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Contents
Recent and forthcoming publications in pss
Information for authors
Tokuyuki Teraji, Takashi Yamamoto, Kenji Watanabe, Yasuo Koide, Junichi Isoya,
Shinobu Onoda, Takeshi Ohshima, Lachlan J. Rogers, Fedor Jelezko, Philipp Neumann,
Jrg Wrachtrup and Satoshi Koizumi
Homoepitaxial diamond film growth: High purity, high crystalline
quality, isotopic enrichment, and single color center formation
Teraji et al. present recent research progress achieved in high-quality
and high-purity diamond growth. To improve both the purity and crys-
talline quality of homoepitaxial diamond films, an advanced growth
condition was applied: higher oxygen concentration in the growth
ambient. With increasing film thickness, morphological patterns (A
and B in the images) move to the crystallographic off direction of the
substrate. Isotopic enrichment and extremely low concentration dop-
ing, which are linked to the study of quantum information devices, are
also discussed in this Feature Article.
Patrik Rath, Sandeep Ummethala, Christoph Nebel, and Wolfram H. P. Pernice
Diamond as a material for monolithically integrated optical and
optomechanical devices
Outstanding optical and mechanical properties make diamond a pris-
tine material for optomechanical applications. This Feature Article pre-
sents an overview on recent progress made in realizing nanophotonic
and nanomechanical devices made from both single crystalline and
polycrystalline diamond. Integrated optomechanical and emerging
diamond single photon circuits are discussed.
Alexander I. Shames, Dmitry Mogilyansky, Alexander M. Panich, Nikolay A. Sergeev,
Marcin Olszewski, Jean-Paul Boudou, and Vladimir Yu. Osipov
XRD, NMR, and EPR study of polycrystalline micro- and
nano-diamonds prepared by a shock wave compression method
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Color centers and defect engineering
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Contents
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Shannon Nicley, Stephen Zajac, Robert Rechenberg, Michael Becker, Aaron Hardy,
Thomas Schuelke, and Timothy A. Grotjohn
Fabrication and characterization of a corner architecture Schottky
barrier diode structure
Andrew Taylor, Petr Ashcheulov, Martin Cada, Ladislav Fekete, Pavel Hubk, Ladislav Klima,
Jir Olejncek, Zdenek Remes , Ivan Jirka, Petr Jancek, Elna Bedel-Pereira, Jaromir Kopecek,
Jan Mistrk, and Vincent Mortet
Effect of plasma composition on nanocrystalline diamond layers
deposited by a microwave linear antenna plasma-enhanced chemical
vapour deposition system
Marco Girolami, Alessandro Bellucci, Paolo Calvani, Carlo Cazzaniga, Marica Rebai,
Davide Rigamonti, Marco Tardocchi, Mario Pillon, and Daniele M. Trucchi
Mosaic diamond detectors for fast neutrons and large ionizing radiation
fields
C. V. Peaker, J. P. Goss, P. R. Briddon, A. B. Horsfall, and M. J. Rayson
The vacancyhydrogen defect in diamond: A computational study
M. Acosta-Elas, A. Sarabia-Sainz, S. Pedroso-Santana, E. Silva-Campa, K. Santacruz-Gomez,
A. Angulo-Molina, B. Castaneda, D. Soto-Puebla, M. Barboza-Flores, R. Melendrez,
S. lvarez-Garca, and M. Pedroza-Montero
Carboxylated nanodiamond and re-oxygenation process of gamma
irradiated red blood cells
Talita Conte Granado, Gregor Neusser, Christine Kranz, Joo Batista Destro Filho,
Valentina Carabelli, Emilio Carbone, and Alberto Pasquarelli
Progress in transparent diamond microelectrode arrays
Marie-Amandine Pinault-Thaury, Ingrid Stenger, Franois Jomard, Jacques Chevallier,
Julien Barjon, Aboulaye Traore, David Eon, and Julien Pernot
Electrical activity of (100) n-type diamond with full donor site
incorporation of phosphorus
Vladimir Nadolinny, Andrey Komarovskikh, Yuri Palyanov, Yuri Borzdov, Igor Kupriyanov,
Mariana Rakhmanova, and Olga Yuryeva
Silicon-containing defects in HPHT diamond synthetized in MgSiC
system
Paolo Calvani, Alessandro Bellucci, Marco Girolami, Stefano Orlando, Veronica Valentini,
Riccardo Polini, and Daniele M. Trucchi
Absorptance enhancement in fs-laser-treated CVD diamond
F. Lloret, D. Araujo, M. P. Alegre, J. M. Gonzalez-Leal, M. P. Villar, D. Eon, and E. Bustarret
TEM study of defects versus growth orientations in heavily boron-doped
diamond
Vladimir Nadolinny, Yuri Palyanov, Olga Yuryeva, Dmitry Zedgenizov, Mariana Rakhmanova,
Alexander Kalinin, and Andrey Komarovskikh
The influence of HTHP treatment on the OK1 and N3 centers in natural
diamond crystals
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Surface chemistry
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Michael Mayr, Martin Fischer, Oliver Klein, Stefan Gsell, and Matthias Schreck
Interaction between surface structures and threading dislocations
during epitaxial diamond growth
Maneesh Chandran, Michal Shasha, Shaul Michaelson, Rozalia Akhvlediani, and
Alon Hoffman
Incorporation of nitrogen into polycrystalline diamond surfaces by
RF plasma nitridation process at different temperatures: Bonding
configuration and thermal stabilty studies by in situ XPS and HREELS
Mateusz Smietana, Marcin Koba, Predrag Mikulic, Robert Bogdanowicz, and Wojtek J. Bock
Improved diamond-like carbon coating deposition uniformity on
cylindrical sample by its suspension in RF PECVD chamber
P. Muret, D. Eon, A. Traor, A. Marchal, J. Pernot, and E. Gheeraert
Hole injection contribution to transport mechanisms in metal/p/p++ and
metal/oxide/p/p++ diamond structures
M. I. Gil-Tolano, R. Melndrez, B. Castaeda, S. Alvarez-Garcia, M. Pedroza-Montero,
D. Soto-Puebla, V. Chernov, and M. Barboza-Flores
Thermoluminescence studies on HPHT diamond crystals exposed to
-irradiation
Tatiana Dolenko, Sergey Burikov, Kirill Laptinskiy, Jessica M. Rosenholm, Olga Shenderova,
and Igor Vlasov
Evidence of carbon nanoparticlesolvent molecule interactions in
Raman and fluorescence spectra
Z. Remes, J. Micova, P. Krist, D. Chvatil, R. Effenberg, and M. Nesladek
N-V-related fluorescence of the monoenergetic high-energy electron-
irradiated diamond nanoparticles
Andrey Bolshakov, Victor Ralchenko, Vadim Sedov, Andrey Khomich, Igor Vlasov,
Alexander Khomich, Nikolay Trofimov, Vladimir Krivobok, Sergei Nikolaev,
Roman Khmelnitskii, and Vladimir Saraykin
Photoluminescence of SiV centers in single crystal CVD diamond in situ
doped with Si from silane
Fang Gao and Christoph Erwin Nebel
Diamond nanowire forest decorated with nickel hydroxide as a
pseudocapacitive material for fast chargingdischarging
Vitaly Bormashov, Sergey Troschiev, Alexander Volkov, Sergey Tarelkin, Eugeniy Korostylev,
Anton Golovanov, Mikhail Kuznetsov, Dmitry Teteruk, Nikolay Kornilov, Sergey Terentiev,
Sergey Buga, and Vladimir Blank
Development of nuclear microbattery prototype based on Schottky
barrier diamond diodes
Kazuki Sato, Takayuki Iwasaki, Maki Shimizu, Hiromitsu Kato, Toshiharu Makino,
Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki, and Mutsuko Hatano
Fabrication of diamond lateral pn junction diodes on (111) substrates
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Electronic properties and devices
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Contents
2361
M. Pomorski, C. Delfaure, N. Vaissiere, H. Bensalah, J. Barjon, M.-A. Pinault-Thaury, D. Tromson,
and P. Bergonzo
Characterization of the charge-carrier transport properties of IIa-Tech
SC diamond for radiation detection applications
Christos K. Mavrokefalos, Geoffrey W. Nelson, Christopher G. Poll, Richard G. Compton, and
John S. Foord
Electrochemical aspects of PtCu and Cu modified boron-doped
diamond
Vladimir Nadolinny, Andrey Komarovskikh, Yuri Palyanov, and Alexander Sokol
EPR of synthetic diamond heavily doped with phosphorus
A. B. Muchnikov, A. L. Vikharev, J. E. Butler, V. V. Chernov, V.A. Isaev, S.A. Bogdanov,
A. I. Okhapkin, P. A. Yunin, and Y. N. Drozdov
Homoepitaxial growth of CVD diamond after ICP pretreatment
Zheng Xu, T. Hantschel, M. Tsigkourakos, and W. Vandervorst
Scanning spreading resistance microscopy for electrical characterization
of diamond interfacial layers
S. Elfimchev, M. Chandran, R. Akhvlediani, and A. Hoffman
Trap-assisted photon-enhanced thermionic emission from polycrystalline
diamond films
Kazuya Shirota, Daisuke Takeuchi, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura,
Hideyo Okushi, and Satoshi Yamasaki
Potential profile evaluation of a diamond lateral pn junction diode
using Kelvin probe force microscopy
Menelaos Tsigkourakos, Thomas Hantschel, Zheng Xu, Bastien Douhard, Johan Meersschaut,
Yiming Zou, Karin Larsson, Mats Boman, and Wilfried Vandervorst
Suppression of boron incorporation at the early growth phases of
boron-doped diamond thin films
Vladimir A. Shershulin, Vadim S. Sedov, Anna Ermakova, Uwe Jantzen, Lachlan Rogers,
Anastasia A. Huhlina, Ekaterina G. Teverovskaya, Victor G. Ralchenko, Fedor Jelezko,
and Igor I. Vlasov
Size-dependent luminescence of color centers in composite
nanodiamonds
A. Talbi, A. Soltani, A. Rumeau, A. Taylor, L. Drbohlavov, L Klims a, J. Kopecek, L. Fekete,
M. Krecmarov, and V. Mortet
Simulations, fabrication, and characterization of diamond-coated Love
wave-type surface acoustic wave sensors
Benot Baudrillart, Fabien Bndic, Ovidiu Brinza, Thomas Bieber, Thierry Chauveau,
Jocelyn Achard, and Alix Gicquel
Microstructure and growth kinetics of nanocrystalline diamond films
deposited in large area/low temperature distributed antenna array
microwave-plasma reactor
2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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Di-nitrogenvacancyhydrogen defects in diamond: a computational
study
Sergey Tarelkin, Vitaly Bormashov, Sergei Buga, Alexander Volkov, Dmitry Teteruk,
Nikolay Kornilov, Mikhail Kuznetsov, Sergey Terentiev, Anton Golovanov, and
Vladimir Blank
Power diamond vertical Schottky barrier diode with 10 A forward
current
Miriam Fischer, Maneesh Chandran, Rozalia Akhvlediani, and Alon Hoffman
The influence of deposition temperature on the adhesion of diamond
films deposited on WCCo substrates using a CrN interlayer
Audrey Valentin, Andr Tardieu, Vianney Mille, Alexandre Tallaire, Jocelyn Achard, and
Alix Gicquel
Polarization effect on time-of-flight measurements performed on
a CVD diamond single crystal
Shinobu Onoda, Moriyoshi Haruyama, Tokuyuki Teraji, Junichi Isoya, Wataru Kada,
Osamu Hanaizumi, and Takeshi Ohshima
New application of NV centers in CVD diamonds as a fluorescent
nuclear track detector

2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim www.pss-a.com