DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA2724UT1A
SWITCHING
N-CHANNEL POWER MOSFET

OM
DESCRIPTION PACKAGE DRAWING (Unit: mm)
The PA2724UT1A is N-channel MOSFET designed for DC/DC converter applications.

1.27
.C
1
8
FEATURES

5.15 0.2
2 7

5 0.2
Low on-state resistance 3 6
4 5
RDS(on)1 = 3.3 m MAX. (VGS = 10 V, ID = 15 A)

0.42 0.05
+0.1
RDS(on)2 = 5.0 m MAX. (VGS = 4.5 V, ID = 15 A) 6 0.2 0.10 S

Low input capacitance

IC 5.4 0.2

0.10 M
Ciss = 4400 pF TYP. (VDS = 15 V, VGS = 0 V)
Thin type surface mount package with heat spreader (8-pin HVSON)

+0.05
RoHS Compliant

0.27 0.05
1.0 MAX.
0
0
1
0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.)
T-
1, 2, 3 : Source

4.1 0.2
Drain to Source Voltage (VGS = 0 V) VDSS 30 V
4 : Gate
Gate to Source Voltage (VDS = 0 V) VGSS 20 V 5, 6, 7, 8: Drain
Drain Current (DC) ID(DC) 29 A
Note1 3.65 0.2
Drain Current (pulse) ID(pulse) 170 A
Note2 0.6 0.15 0.7 0.15
Total Power Dissipation PT1 1.5 W
SE

Note2
Total Power Dissipation (PW =10 sec) PT2 4.6 W
Channel Temperature Tch 150 C
Storage Temperature Tstg 55 to +150 C
Note3
EQUIVALENT CIRCUIT
Single Avalanche Current IAS 29 A
Note3
Single Avalanche Energy EAS 84 mJ Drain
IP

THERMAL RESISTANCE Body

Note2
Gate Diode
Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 C/W
Channel to Case (Drain) Thermal Resistance Rth(ch-C) 1.5 C/W
CH

Source
Notes 1. PW 10 s, Duty Cycle 1%
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm
3. Starting Tch = 25C, VDD = 15 V, RG = 25 , VGS = 20 0 V, L = 100 H

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and
quickly dissipate it once, when it has occurred.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.

Document No. G18297EJ1V0DS00 (1st edition) 2006, 2007

Date Published April 2007 NS CP(K)
Printed in Japan
 PA2724UT1A

ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 A

Gate Leakage Current IGSS VGS = 20 V, VDS = 0 V 100 nA
Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V
Note
Forward Transfer Admittance | yfs | VDS = 10 V, ID = 15 A 13 S

OM
Note
Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 15 A 2.7 3.3 m
RDS(on)2 VGS = 4.5 V, ID = 15 A 3.7 5.0 m
Input Capacitance Ciss VDS = 15 V, 4400 pF
Output Capacitance Coss VGS = 0 V, 835 pF
Reverse Transfer Capacitance Crss f = 1 MHz 310 pF

.C
Turn-on Delay Time td(on) VDD = 15 V, ID = 15 A, 26 ns
Rise Time tr VGS = 10 V, 9.4 ns
Turn-off Delay Time td(off) RG = 10 109 ns
Fall Time tf 28 ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
IC
VDD = 15 V,
VGS = 5 V,
ID = 29 A
35
13
12
nC
nC
nC
Note
Body Diode Forward Voltage VF(S-D) IF = 29 A, VGS = 0 V 0.8 V
Reverse Recovery Time trr IF = 29 A, VGS = 0 V, 42 ns
T-
Reverse Recovery Charge Qrr di/dt = 100 A/s 43 nC
Gate Resistance RG f = 1 MHz 1.8

Note Pulsed
SE

TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME

D.U.T. D.U.T.
VGS
RG = 25 L RL
VGS 90%
10% VGS
Wave Form
RG 0
PG. 50 VDD PG. VDD
VGS = 20 0 V
IP

VDS
90% 90%
VGS VDS
BVDSS 10% 10%
0 VDS 0
IAS Wave Form
ID VDS td(on) tr td(off) tf
VDD
= 1 s ton toff
CH

Duty Cycle 1%
Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.
IG = 2 mA RL

PG. 50 VDD

2 Data Sheet G18297EJ1V0DS

 PA2724UT1A

TYPICAL CHARACTERISTICS (TA = 25C)

DERATING FACTOR OF FORWARD BIAS FORWARD BIAS SAFE OPERATING AREA

SAFE OPERATING AREA

120 1000
dT - Percentage of Rated Power - %

ID(pulse) PW
100 =
30
100 0

ID - Drain Current - A
1i 0 s
1i 0 m
ID(DC) s

1i
80

OM
i

m
m

i
s
s
i

1i 0
60 10 it e
d Po
w
s
m ) er
Li V D
o n )
1i 0 ss
S( = ip
D
R GS at
40 (V
io
n
Li
1 m
it
ed
Single Pulse
20 Mounted on a glass epoxy board of

.C
25.4 mm x 25.4 mm x 0.8 mm

0 0.1
0 20 40 60 80 100 120 140 160 0.01 0.1 1 10 100

TA - Ambient Temperature - C VDS - Drain to Source Voltage - V

1000
IC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - C/W

Rth(ch-A) = 83.3C/Wi
100
T-
10

Rth(ch-C) = 1.5C/Wi
1
SE

0.1
Single Pulse
Rth(ch-A): Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm
0.01
100 1m 10 m 100 m 1 10 100 1000

PW - Pulse Width - s
IP

DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS

DRAIN TO SOURCE VOLTAGE
90 90
10 V Pulsed
4.5 V 3.8 V
CH

4.0 V
ID - Drain Current - A

ID - Drain Current - A

60 3.6 V 60
TA = 55C
3.4 V 25C
75C
125C
30 30
VGS = 3.0 V
3.2 V
VDS = 10 V
Pulsed
0 0
0 0.2 0.4 0.6 0.8 1 0 1 2 3 4 5

VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V

Data Sheet G18297EJ1V0DS 3

 PA2724UT1A

GATE TO SOURCE CUT-OFF VOLTAGE vs. FORWARD TRANSFER ADMITTANCE vs.

CHANNEL TEMPERATURE DRAIN CURRENT
3 100
VGS(off) - Gate to Source Cut-off Voltage - V

| yfs | - Forward Transfer Admittance - S

TA = 55C
2.5 25C
75C
2 10 125C

OM
1.5

1 1

0.5 VDS = 10 V VDS = 10 V

.C
ID = 1 mA Pulsed
0 0.1
-75 -25 25 75 125 175 0.01 0.1 1 10 100

Tch - Channel Temperature - C ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT
IC RDS(on) - Drain to Source On-state Resistance - m

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m

10 15
ID = 15 A
Pulsed
8
T-
10
6

VGS = 4.5 V
4
5

2 10 V
SE

Pulsed
0 0
0.1 1 10 100 1000 0 5 10 15 20

ID - Drain Current - A VGS - Gate to Source Voltage - V

IP

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
CHANNEL TEMPERATURE
RDS(on) - Drain to Source On-state Resistance - m

10 100000
ID = 15 A
Pulsed
Ciss, Coss, Crss - Capacitance - pF

8
CH

10000
6 VGS = 4.5 V
Ciss

4
1000
10 V Coss
2
VGS = 0 V Crss
f = 1 MHz
0 100
-75 -25 25 75 125 175 0.01 0.1 1 10 100

Tch - Channel Temperature - C VDS - Drain to Source Voltage - V

4 Data Sheet G18297EJ1V0DS

 PA2724UT1A

DYNAMIC INPUT/OUTPUT CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE

6 1000
VGS - Gate to Source Voltage - V

VDD = 24 V

IF - Diode Forward Current - A

15 V 100
6V
4 VGS = 10 V 0V
10

OM
1
2

0.1

ID = 29 A Pulsed

.C
0 0.01
0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2

QG - Gate Charge - nC VF(S-D) - Source to Drain Voltage - V

ORDERING INFORMATION

PA2724UT1A-E1-AZ
PART NUMBER
Note
LEAD PLATING
IC PACKING PACKAGE

Note
Sn-Bi
PA2724UT1A-E2-AZ 8-pin HVSON
Note
Tape 3000 p/reel
PA2724UT1A-E1-AY 0.10 g TYP.
T-
Note
Pure Sn
PA2724UT1A-E2-AY

Note Pb-free (This product does not contain Pb in the external electrode.)
SE
IP
CH

Data Sheet G18297EJ1V0DS 5

 PA2724UT1A

OM
The information in this document is current as of April, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.

.C
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IC
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T-
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SE

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CH

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M8E 02. 11-1