ST 2SC828 / 828A

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications.

These transistors are subdivided into three groups Q,

R and S according to their DC current gain.

On special request, these transistors can be

manufactured in different pin configurations.

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (T a = 25o C)

Symbol Value Unit

ST 2SC828 ST 2SC828A

C o l l e c t o r B a s e V o l ta g e VCBO 30 45 V
Collector Emitter Voltage VCEO 25 45 V
Emitter Base Voltage VEBO 7 V

Pe ak C oll ect or Cur re nt ICM 100 mA

Collector Current IC 50 mA
Power Dissipation Ptot 400 mW
O
Junction Temperature Tj 150 C
O
Storage T emperature Range TS -55 to +150 C

G S P FORM A IS AVAILABLE

.: (495) 795-0805
: (495) 234-1603
. : info@rct.ru
: www.rct.ru

ST 2SC828 / 828A

Characteristics at Tamb=25 OC

Symbol Min. Typ. Max. Unit

DC Current Gain
at IC=2mA, VCE=5V
Current Gain Group Q hFE 130 - 280 -
R hFE 180 - 360 -
S hFE 260 - 520 -
Collector Base Breakdown Voltage
at IC=10A ST 2SC828 V(BR)CBO 30 - - V
ST 2SC828A V(BR)CBO 45 - - V
Collector Emitter Breakdown Voltage
at IC=2mA ST 2SC828 V(BR)CEO 25 - - V
ST 2SC828A V(BR)CEO 45 - - V
Emitter Base Breakdown Voltage
at IE=10A V(BR)EBO 7 - - V
Collector Saturation Voltage
at IC=50mA, IB=5mA VCE(sat) - 0.14 - V
Base Emitter Voltage
at IC=10mA, VCE=5V VBE - - 0.8 V
Gain Bandwidth Product
at IC=-2mA, VCE=10V fT - 220 - MHz
Noise Figure
at VCE=5V,IE=0.2mA, NF - 6 - dB
RG=2k,f=1kHz

G S P FORM A IS AVAILABLE

SEMTECH ELECTRONICS LTD.

(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 07/12/2002