1. Which of these has 3 layers?

A. PIN diode
B. Zener diode
C. Schottky diode
D. Photo diode
Explanation: p layer, i layer and n layer.

2. As per Einstein's equation, the velocity of emitted electron in photoelectric emission is given by the
equation

A. mv2 = hf - Uw

B. mv2 hf - Uw

C. mv2 = hf + Uw

D. mv2 hf + Uw
Explanation: Some electrons have less energy than Fermi level E and, therefore, more energy than UW to
escape.
Therefore, this equation has inequality sign.

3. For an P-channel enhancement type MOSFET determine the drain current if K = 0.278 x 10-3A/V2, VGS
= -4V, VT = -2V, Voltage equivalent at 27C = 26 mV.
A. 10 mA B. 1.11 mA
C. 0.751 mA D. 46.98 mA
Explanation: Drain current Id = k (|Vgs| - |VT|)2
= 0.278 x 10-3(4 - 2)2
= 1.11 mA.

4. The skin depth of copper is found to be 66 mm at 1 MHz at a certain temperature. At the same
temperature and at 2 MHz, the skin depth would be approximately
A. 47 m B. 33 m
C. 92 m D. 1.22 m

Explanation: Skin depth =

5. When p-n junction is reverse biased the holes in p material move towards the junction and electrons in
n material move away from the junction.
A. True B. False
Explanation: Both holes and electrons move away from junction.

6. A semiconductor diode is biased in forward direction and carrying current I. The current due to holes in
p material is
A. I B. 0
C. less than I D. 0.5
Explanation: Small current due to minority carriers also. Therefore hole current is less than.
7. Between which regions does BJT act like switch?
A. Cut off and saturation
B. Cut off and forward active
C. Forward active and cut off
D. Saturation and active
Explanation: In cut off mode a BJT is an open switch and in saturation mode it is a closed switch.

8. Assertion (A): When a photoconductive device is exposed to light, its bulk resistance increases.
Reason (R): When exposed to light, electron hole pairs are generated in the photoconductive device.
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Explanation: A is wrong because exposure to light decreases bulk resistance.

9. Which of the following elements act as donor impurities?

1. Gold
2. Phosphorus
3. Boron
4. Antimony
5. Arsenic
6. Indium
Select the answer using the following codes :
A. 1, 2 and 3
B. 1, 2, 4, and 6
C. 3, 4, 5 and 6
D. 2, 4 and 5
Explanation: Only antimony, arsenic and phosphorous are pentavalent.

10. Light dependent resistor is

A. photo resistive device
B. photo voltaic device
C. photo emissive device
D. either (a) or (c)
Explanation: Resistance of LDR depends on light.

11. The breakdown voltage in a zener diode

A. is almost constant
B. is very small
C. may destroy the diode
D. decreases with increase in current
Explanation: Therefore, it is used in voltage regulator circuits.

12. A varactor diode is used for

A. tuning B. rectification
C. amplification D. rectification and amplification
Explanation: Its voltage dependent capacitance is used for tuning.
13. One eV = 1.602 x 10-19 joules.
A. True B. False
Explanation: One electron has a charge 1.602 x 10-19 C, when it falls through 1 V, energy is 1 eV = 1.602
x 10-19 J.

14. Assertion (A): When VDS is more than rated value the drain current in a JFET is very high.
Reason (R): When VDS is more than rated value, avalanche breakdown occurs.
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Explanation: Avalanche breakdown causes high current.

15. If ib is plate current, eb is plate voltage and ec is grid voltage the v-i curve of a vacuum triode is
ib = 0.003 (eb + kec)n. Typical values of k and n are
A. 0.5 and 1 B. - 2 and 1
C. 30 and 1 D. 30 and 1.5
Explanation: k has to be much higher than 1 so that grid is effective in controlling plate current n is not 1
because it is a nonlinear device.

16. In which material do conduction and valence bands overlap

A. insulators
B. conductors
C. both conductor and semiconductor
D. semiconductors
Explanation: This is the reason for high conductivity of conductors.

17. For a photoconductor with equal electron and hole mobilities and perfect ohmic contacts at the ends,
an increase in illumination results in
A. a change in O.C. voltage
B. a change in S.C. current
C. a decrease in resistance
D. an increase in resistance
Explanation: Increase in illumination reduces resistance of a photoconductor.

18. Discrete transistors T1 and T2 having maximum collector current rating of 0.75 amp are connected
in parallel as shown in the figure, this combination is treated as a single transistor to carry a total
current of 1 ampere, when biased with self bias circuit. When the circuit is switched on, T1 draws 0.55
amps and T2 draws 0.45 amps. If the supply is kept on continuously, ultimately it is very likely that
A. Both T1, and T2 get damaged
B. Both T1, and T2 will be safe.
C. T1 Will get damaged and T2 will be safe
D. T2 will get damaged and T1, will be safe.
Explanation: T1 draws 0.55 A and T2 draws 0.45 A, T1 will get more heated and correct increase.
Ultimately, I1 = 1A and I2 = 0.

19. The number of p-n junctions in a semiconductor diode are

A. 0 B. 1
C. 2 D. 1 or 2
Explanation: Semiconductor diode has one p-n junction, BJT has two and SCR has three p-n junctions.

20. Assertion (A): A high junction temperature may destroy a diode.

Reason (R): As temperature increases the reverse saturation current increases.
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Explanation: Both A and R are correct. The diode is destroyed due to high reverse current.

21. When a diode is not conducting, its bias is

A. forward B. zero
C. reverse D. zero or reverse
Explanation: Diode conducts only when forward biased. There is no conduction when bias is zero or
reverse.

22. The SCR would be turned OFF by voltage reversal of applied anode-cathode ac supply of frequency
of
A. 30 kHz B. 15 kHz
C. 5 kHz D. 20 kHz
Explanation: For inverter grade SCR, typical turn off time (toff) is 5 to 50 sec while 50 to 100 sec for
converter grade SCR.
Hence supply frequency of 5 kHz will turn off the SCR by voltage reversal

because = 200 sec.

23. The number of valence electrons in a donor atom is
A. 2 B. 3
C. 4 D. 5
Explanation: Therefore, it can donate one electron.

24. An electron rises through a voltage of 100 V. The energy acquired by it will be
A. 100 eV B. 100 joules
C. (100)1.2 eV D. (100)1.2 joules
Explanation: When an electron rises through 1 V, energy = 1 eV.

25. Measurement of hall coefficient enables the determination of

A. mobility of charge carriers
B. type of conductivity and concentration of charge carriers
C. temperature coefficient and concentration of charge carriers
D. fermi level and forbidden energy gap
Explanation: Hall effect can be used to find type and concentration of charge carriers.

26. A Varactor diode has

A. a fixed capacitance
B. a fixed inductance
C. a voltage variable capacitance
D. a current variable inductance
Explanation: The applied bias governs the width of depletion layer. Therefore, capacitance varies with
bias.

27. The most important set of specifications of transformer oil includes

A. dielectric strength and viscosity
B. dielectric strength and flash point
C. flash point and viscosity
D. dielectric strength, flash point and viscosity
Explanation: Oil used in transformer work as cooling as well as dielectric strength.

28. Assertion (A): In Hall effect the O.C. transverse voltage developed by a current carrying
semiconductor with a steady magnetic field perpendicular to the current direction has opposite signs for n
and p semiconductors.
Reason (R): The magnetic field pushes both holes and electrons in the same direction.
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Explanation: Holes and electrons move in opposite directions. Therefore R is wrong.

29. A voltage of 9 V is applied in forward direction to a semiconductor diode in series with a load
resistance of 1000 . The voltage across the load resistance is zero. It indicates that
A. diode is short circuited
B. diode is open circuited
C. resistor is open circuited
D. diode is either o.c or s.c
Explanation: Since there is no voltage across load resistor, the current is zero and diode is open-circuit. If
diode is short- circuited or resistor is open-circuited almost 9 V will appear across resistor.

30. If the drift velocity of holes under a field gradient of 100 V/m in 5 m/s, their mobility (in SI units) is
A. 0.05 B. 0.5
C. 50 D. 500

Explanation: .

31. The derating factor for a BJT transistor is about

A. 0.5 mW/C B. 2.5 mW/C
C. 10 mW/C D. 25 mW/C
Explanation: For every 1C rise in ambient temperature the power dissipation must be reduced by 2.5
mW so that transistor is safe.

32. An intrinsic silicon sample has 2 million free electrons. The number of holes in the sample is
A. 2 million B. almost zero
C. more than 2 million D. less than 2 million
Explanation: In intrinsic semiconductor, the number of free electrons is equal to number of holes.

33. Assertion (A): When reverse voltage across a p-n junction is increased, the junction capacitance
decreases.
Reason (R): Capacitance of any layer is inversely proportional to thickness.
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Explanation: Increase in reverse voltage increases the width of depletion layer and decrease of
capacitance of layer.

34. In an n type semiconductor

A. number of free electrons and holes are equal
B. number of free electrons is much greater than the number of holes
C. number of free electrons may be equal or less than the number of holes
D. number of holes is greater than the number of free electrons
Explanation: Therefore, in n type semiconductor electrons are majority carriers.

35. Mobility of electrons and holes are equal.

A. True B. False
Explanation: Mobility of electrons is more than that of holes.

36. Electrons can be emitted from a metal surface due to high electric field.
A. True B. False
Explanation: This is called field emission.
37. In an n type semiconductor the fermi level is 0.35 eV below the conduction band, the concentration of
donor atoms is increased to three times. The new position of Fermi level will be
A. 0.35 eV below conduction band
B. about 0.32 eV below conduction band
C. about 0.32 eV above conduction band
D. about 0.1 eV below conduction band
Explanation: Therefore, conductivity increases.

38. Assertion (A): In a BJT, the base region is very thick.

Reason (R): In p-n-p transistor most of holes given off by emitter diffuse through the base.
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Explanation: Base region is thin.

39. Assertion (A): The behaviour of FET is similar to that of a pentode.

Reason (R): FETs and vacuum triode are voltage controlled devices.
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Explanation: Low work function permits easy emission.

40. SCR can be turned on by

1. applying anode voltage at a sufficient fast rate
2. applying sufficiently large anode voltage
3. increasing the temperature of SCR to a sufficiently
4. applying sufficiently large gate current.
A. 1, 2, 4 only
B. 4 only
C. 1, 2, 3, 4
D. none
Explanation: If we apply the anode voltage above breakover voltage of SCR, SCR can be triggered. Also
by sufficiently fast rate of rise of anode voltage and large gate current will trigger SCRon.
During forward blocking most of the applied voltage appears across reverse biased junction J2.
This voltage across J2 associated with leakage current may rise temperature of this junction.
With increase in temperature, leakage current through junction J2 further increases and this cumulative
process may turn on the SCR at some high temperature.

41. In a bipolar transistor

A. recombination in base regions of both n-p-n and p-n-p transistor is low
B. recombination in base regions of both n-p-n and p-n-p transistors is high
C. recombination in base region of n-p-n transistor is low but that in p-n-p transistor is high
D. recombination in base region of p-n-p transistor is low but that in n-p-n transistor is high
Explanation: Base is very thin and therefore recombination is minimum in both p-n-p and n-p-n
transistors.
42. If for a silicon n-p-n transistor, the base to emitter voltage (VBE) is 0.7 V and the collector to base
voltage VCB is 0.2 Volt, then the transistor is operating in the
A. normal active mode
B. saturation mode
C. inverse active mode
D. cut off mode
Explanation:
Transistor will operate in active mode because
VBE = 0.7 volt, (Base emitter junction is forward biased)
VCB = - VBC = - 0.2 V (Base to collector junction is reverse biased).

43. The number of doped regions in a bipolar junction transistor is

A. 1 B. 2
C. 3 D. 4
Explanation: p, n, p or n, p, n.

44. Donor energy level is n type semiconductor is very near valence band.
A. True B. False
Explanation: It is near conduction band.

45. GaAs has an energy gap 1.43 eV the optical cut off wavelength of GaAs would lie in the
A. visible region of the spectrum
B. infrared region of the spectrum
C. ultraviolet region of the spectrum
D. for ultraviolet region of the spectrum
Explanation: GaAs has very large band gap and high carrier mobility.

46. Which of the following is basically a voltage controlled capacitance?

A. Zener diode
B. Diode
C. Varactor diode
D. LED
Explanation: Therefore, varactor is used for tuning in TV.

47. When the i-v curve of a photodiode passes through origin the illumination is
A. maximum
B. minimum
C. zero
D. equal to rated value
Explanation: i is plotted on y-axis and v on x-axis. When passing through origin current can be zero only.

48. An n type silicon bar 0.1 cm long and 100 m2 in cross-sectional area has a majority carrier
concentration of 5 x 1020/m3 and the carrier mobility is 0.13 m0/V-s at 300k. If the charge of an electron
is 1.6 x 10-19 coulomb, then the resistance of the bar is
A. 106 ohm
B. 104 ohm
C. 10-1 ohm
D. 10-4 ohm

Explanation: Resistance of bar(R) =

l = 0.1 cm, A = 100 x 10-6 m2

= nen + Pep
But bar is of n type then it can be approximated to = nen.

49. The threshold voltage of a MOSFET can be lowered by

1. using thin gate oxide
2. reducing the substrate concentration
3. increasing the substrate concentration.
Of the above statement
A. 3 alone is correct
B. 1 and 2 are correct
C. 1 and 3 are correct
D. 2 alone is correct
Explanation: Increasing the substrate concentration lowers threshold voltage. Gate oxide layer has no
effect an threshold voltage.

50. In which device does the extent of light controls the conduction
A. photovoltaic cell
B. photo electric relay
C. LED
D. photo sensitive device
Explanation: The resistance of photosensitive device depends on the light.