SOT89 PNP SILICON PLANAR BCX51

MEDIUM POWER TRANSISTORS BCX52

ISSUE 3 FEBRUARY 1996
BCX53
COMPLEMENTARY TYPE BCX51 BCX54
BCX52 BCX55 C
BCX53 BCX56
PARTMARKING DETAILS
BCX51 AA BCX52 AE BCX53 AH
BCX51-10 AC BCX52-10 AG BCX53-10 AK E
BCX51-16 AD BCX52-16 AM BCX53-16 AL C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BCX51 BCX52 BCX53 UNIT
Collector-Base Voltage V CBO -45 -60 -100 V
Collector-Emitter Voltage V CEO -45 -60 -80 V
Emitter-Base Voltage V EBO -5 V
Peak Pulse Current I CM -1.5 A
Continuous Collector Current IC -1 A
Power Dissipation at T amb=25C P tot 1 W
Operating and Storage Temperature Range T j:T stg -65 to +150 C
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base BCX53 V (BR)CBO -100 V I C =-100A
Breakdown BCX52 -60 V I C =-100A
Voltage BCX51 -45 V I C =-100A
Collector-Emitter BCX53 V (BR)CEO -80 V I C =-10mA*
Breakdown BCX52 -60 I C =-10mA*
Voltage BCX51 -45 I C =-10mA*
Emitter-Base V (BR)EBO -5 V I E =-10A
Breakdown Voltage
Collector Cut-Off Current I CBO -0.1 A V CB =-30V
-20 A V CB =-30V, T amb =150C
Emitter Cut-Off Current I EBO -20 nA V EB =-4V
Collector-Emitter V CE(sat) -0.5 V I C =-500mA, I B =-50mA*
Saturation Voltage
Base-Emitter V BE(on) -1.0 V I C =-500mA, V CE =-2V*
Turn-On Voltage
Static Forward Current h FE 25 IC =-5mA, V CE =-2V*
Transfer Ratio 40 250 IC =-150mA, V CE =-2V*
25 IC =-500mA, V CE =-2V*
-10 63 160 IC =-150mA, V CE =-2V*
-16 100 250 IC =-150mA, V CE =-2V*
Transition Frequency fT 150 MHz I C =-50mA, V CE =-10V,
f=100MHz
Output Capacitance C obo 25 pF V CB =-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

3 - 34
www.s-manuals.com